Abstract: A ferroelectric thin film superior in coatability, fineness of structure and uniformity of composition, is obtained by a method comprised of inducing ferroelectric reactant materials consisting of plural elements into dissociation by exciting plasma with RF power in order for them to participate in a deposition reaction; setting an optimal process condition in which the ions dissociated from the reactant materials by the excited plasma are subjected to deposition at high temperatures under low pressures; supplying the reactant materials through conduits, a manifold and a shower head to a reactor without deterioration, the manifold collecting the reactant materials, the shower head serving to spray the mixed reactant materials; and depositing a ferroelectric thin film in the reactor while purging residual gas from the conduits.

Abstract: A method for aligning micro patterns of a semiconductor device, capable of reducing the number of dies having poor quality in the formation of patterns, thereby achieving an improvement in operation reliability of the semiconductor device. The method of the present invention utilizes the fact that even in the case of a semiconductor wafer having alignment marks damaged due to an error occurring in the formation or etching of thin films, outer mark portions of its overlay measuring marks can be observed. For several dies sampled as observation dies from the semiconductor wafer, light exposure is carried out to form photoresist film patterns under the condition that the semiconductor wafer is misaligned from the light exposure mask. Thereafter, alignment marks and inner mark portions of overlay measuring marks are formed. A misalignment angle .theta. between the semiconductor wafer and light exposure mask is also calculated.

Abstract: A method for forming field oxide films in a semiconductor device, characterized by treating a trench mask and a trench oxide to make their surfaces positively charged so that an ozone-TEOS USG film might be deposited at a rapid rate on the trench oxide but at slow rate on the trench mask, whereby production yield can be significantly improved.

Abstract: A mode adaptive data output buffer for a semiconductor memory device, the semiconductor memory device having a plurality of memory cells for storing data therein, comprising true end complementary data lines for inputting true and complementary data read from the memory cells, respectively, a control line for inputting an output enable signal for controlling the output of the true and complementary data read from the memory cells, first and second pull-up drivers connected in parallel between a first voltage source and an output line, first and second pull-down drivers connected in parallel between a second voltage source and the output lane, a PMOS transistor for switching the second pull-up driver to the output line, an NMOS transistor for switching the second pull-down driver to the output line, and a controller for detecting the input order of the true and complementary data read from the memory cells and the output enable signal and controlling the PMOS and NMOS transistors in accordance with the detecte

Abstract: The device comprises an oscillator with electrodes, which is mounted in a casing, means for oscillation excitation, for measuring, recording and processing of signals, and a computer, the attachment of the oscillator being effected by means of balls with electroconducting surface and the oscillator being mounted in a holder with the possibility of movement in relation to the balls. The oscillator may be executed in different variants, for example in the form of a cylinder, disk, rod, plate, ball, and it may be hollow and may contain a partition as well as elements increasing its useful surface. The device is provided with a high-pressure vessel and is also used under high pressures.

Abstract: A system for acquiring and processing seismic data comprises source-means for generating sound waves and receiver-means for recording as data those waves as reflected from sub-surface interfaces, and means for processing the recorded data operable to generate sets of actual data each individually associated with specific sub-surface reflection points, order the data-sets in accordance with receiver and source-means separation, process each data-set to generate additional data intermediate the recorded data, and re-order each data-set and additional data in accordance with receiver and source-means separation for further processing. Each data-set is applied to a filter to generate said additional data intermediate of the recorded actual data. The filter is selected from the group comprising linear, quadratic or spline interpolation filters, frequency space (f-x) filters, tau-p filters, smart filters artificially intelligent filters, neural network filters and (preferably) sinc filters.

Abstract: A semiconductor memory device comprising a plurality of memory cell arrays each of which includes a plurality of memory cells, a plurality of word lines connected to the memory cells for addressing them, a plurality of bit lines connected to the memory cells for transferring data from/to them, a first word line decoder connected to the word lines for activating them, and a bit line decoder connected to the bit lines for activating them. The semiconductor memory device further comprises a plurality of metal lines. Each of the metal lines is formed every four of the word lines and connected to the first word line decoder. The semiconductor memory device further comprises a plurality of second word line decoders. Each of the second word line decoders is connected to a corresponding one of the metal lines to address one of corresponding four of the word lines.

Abstract: An improved precharge voltage generator for a semiconductor memory device having a bit line connected to a plurality of memory cell arrays. The improved precharge voltage generator employs a voltage divider for dividing a supply voltage and supplying the divided voltage as a precharge voltage signal to the bit line, and a first control current sink connected in parallel to the voltage divider to increase an amount of current of the precharge voltage signal to be supplied to the bit line in an active mode of the semiconductor memory device. The improved precharge voltage generator can use a second control current sink connected in parallel to the voltage divider to increase the current amount of the precharge voltage signal to be supplied to the bit line for a predetermined time period from an end time point of the active mode of the semiconductor memory device.

Abstract: Method for the preparation of pattern overlay accuracy-measuring mark consisting of an inner box and an outer box. The method is characterized in that a groove is formed along the inside boundary line of the outer box, so as to enlarge step thereat. The enlarged step prevents inaccuracy in defining the boundary line, of the outer box whose inaccuracy is mainly attributed to smooth flow which occurs at the boundary line as a metal layer is coated over the outer box. Accordingly, the method can easily define the boundary line and thus, definitely measure the overlay accuracy.

Abstract: A data output buffer circuit for a semiconductor device for transferring read cell data to the peripheral circuits, comprising an input terminal for inputting the read cell data, a first NMOS transistor for transferring the data from the input terminal when it has a first logic level, a first PMOS transistor for transferring the data from the input terminal when it has a second logic level, a second PMOS transistor for transferring a high logic signal in response to an output signal from the first NMOS transistor, a second NMOS transistor for transferring a low logic signal in response to an output signal from the first PMOS transistor, and an output terminal for outputting the high logic signal from the second PMOS transistor or the low logic signal from the second NMOS transistor to the peripheral circuits.

Abstract: An apparatus and method to enable minimally invasive transdermal measurements of the fluorescence lifetime of an implanted element without reagent consumption and not requiring painful blood sampling. The monitoring apparatus displays the quantity of a selected substance present in the skin and stores the data in memory. The stored information can be transmitted via modem, or antenna, to a master station for diagnostic purposes or clinical evaluation. The use of this method and apparatus improves control of blood monitoring, and therefore, enhances long-term disease management with fewer complications.

Abstract: A storage sleeve comprising a reinforcing panel and a flexible sheet, wherein the sheet and panel are joined by welding and subsequent sewing, to form a pocket.

Abstract: Veneered panel continuous lamination machine. It consists of a machine formed by two modules (4) and (5) arranged consecutively, the first of which applies veneer (2) to the lower surface of the panels (1), the veneer (2) being supplied by an unwinding device (11); whereas module (5) applies a veneer (3) to the upper surface of the panels (1); this veneer (3) is supplied in cut sheets from a bin (22) where they are stacked.

Abstract: This invention relates to neurotrophic compounds having an affinity for FKBP-type immunophilins, their preparation and use as inhibitors of the enzyme activity associated with immunophilin proteins, and particularly inhibitors of peptidyl-prolyl isomerase or rotamase enzyme activity.

Abstract: A rotary embossing machine includes an embossing mechanism in which an embossing gap is formed between an embossing cylinder and a counter pressure cylinder. For conveying an embossing film web through the embossing gap, the rotary embossing machine includes a conveying mechanism for producing a movement of the web at the same speed as a material layer to be embossed, during an embossing interval. The film conveying mechanism includes a pulling device downstream of the embossing gap which is provided with a slip drive for the embossing film web and a controllable film supply device upstream of the embossing gap which cooperates with the pulling device. This arrangement avoids the risk of the embossing films or foils tearing and improves the embossing quality.

Abstract: A current control circuit for a dynamic random access memory device which has a bit line sense amplifier for sensing and amplifying bit data on a bit line, and a data bit clamping circuit for supplying current to the bit line sense amplifier. The current control circuit is adapted to control the current from the data bit clamping circuit to the bit line sense amplifier. The current control circuit comprises a first path switching circuit for forming a current path from the data bit clamping circuit to the bit line sense amplifier during a refresh operation, a second path switching circuit connected between the first path switching circuit and the data bit clamping circuit, for opening/closing the current path, and a path controller for generating a current control signal in response to an address signal and supplying the generated current control signal to the second path switching circuit.

Abstract: A bit line sense amplifier circuit for restoring and sensing data on a bit line in a semiconductor device. The bit line sense amplifier circuit comprises a first restore signal circuit including a PMOS transistor. The PMOS transistor is operated in response to a first clock signal. The bit line sense amplifier circuit further comprises a first sensing signal circuit including an NMOS transistor. The NMOS transistor is operated in response to a second clock signal. The bit line sense amplifier circuit further comprises a second restore signal circuit being operated in response to a first control signal and a third clock signal, and a second sensing signal circuit being operated in response to a second control signal and a fourth clock signal. The first and second restore signal circuits are connected in parallel to each other. Similarly, the first and second sensing signal circuits are connected in parallel to each other.

Abstract: An optical cable for use in an overhead optical transmission system in which the cable is supported along the route of the system by means of towers, masts or other upstanding supports that are also employed to support electrical power cables, includes one or more optical fibers and an electrically insulating jacket (8). The cable includes an array of elongate conductive elements (10, 12) each of which extends along a portion of the cable, adjacent conductive elements axially overlapping each other with overlapping portions circumferentially spaced apart to form a composite conductive path that extends along the cable and is interrupted when the cable is dry. Adjacent conductive elements (10, 12) are resistively coupled to each other when the surface of the cable is wet to form a continuous electrically conductive path along the cable. Such a form of cable has the advantage that the dry-band arcing under wet conditions is reduced by disrupting the geometry that allows such bands to form.

Abstract: An air outlet structure for an air conditioner of an automobile having its instrument panel equipped with an air outlet. The air outlet structure comprises: a plurality of vertical fins disposed integrally turnably in the air outlet for controlling the horizontal flow of the conditioned air; a plurality of horizontal fins disposed integrally turnably in the air outlet for controlling the vertical direction of the conditioned air; a knob movably fitted on one of the horizontal fins or the vertical fins, which are positioned at the side of the air outlet, for turning the one fin; and a pair of legs formed at the back of the knob and engaging with one of the horizontal fins or the vertical fins, which are positioned at the deep side of the air outlet. The legs have their leading end portions formed into arcuate portions on the hinge pin of the fin which is fitted in the knob.