Abstract: This invention relates to a process for the preparation of 1,1-difluoroolefins, e.g., difluorovinyl cycloaliphatic compounds such as difluorovinylcyclohexane and derivatives by the dehydrofluorination of a trifluoromethyl-substituted cycloaliphatic compound and the resulting compositions. This method utilizes a “sterically hindered super-base” system represented by the formula M+?NRR?; where M is Na or K and R is a secondary, or tertiary alkyl or cycloalkyl group of amines for effecting dehydrofluorination of the trifluoromethyl group leading to the difluorovinyl based cycloaliphatic compounds. The sterically hindered super base can be formed by the, in situ, reaction of a sodium or potassium alkoxide, e.g., KtBuO with a lithium dialkylamide where the lithium is bonded to nitrogen atom of an amine bearing secondary or tertiary aliphatic groups.

Abstract: Novel compositions containing SF4—O—CF3 bonded to an organic group are disclosed. Aryl trifluoromethoxytetrafluorosulfuranes (or Ar—SF4—O—CF3), have been synthesized via the reaction of an aryl disulfide or thiol with fluoroxytrifluoromethane (F3COF). The compositions are useful synthons, which may be derivatized to yield highly electrically polar molecules, particularly novel liquid crystal compositions having high dielectric anisotropies. Cycloalkyl trifluoromethoxytetrafluorosulfuranes have similar utility.

Abstract: A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition comprises an organometallic-modified colloidal abrasive and a nitrogen-containing polymer compound (e.g., a polyalkyleneimine, such as polyamidopolyethyleneimine). The composition possesses both high stability towards gelling and/or solids formation and high selectivity for metal removal in metal CMP. The composition may further comprise an oxidizing agent in which case the composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., copper CMP).

Abstract: This invention relates generally to a improvement in a process for the purification of fluoroxy compounds, such as bis(fluoroxy)difluoromethane and fluoroxytrifluoromethane produced by the fluorination of carbon oxides. The improvement in effecting purification of the fluoroxy compounds is effected by initially selectively removing the fluorine by contacting with a crystalline zeolite and then removing the carbon oxide by selective adsorption.

Abstract: A low defectivity colloidal silica-based product slurry for use in chemical mechanical planarization (CMP) and an associated production method are described. The product slurry is produced using centrifugation of and optionally with addition of a surfactant to a starting colloidal silica (which can be a commercially available colloidal silica). The product slurry has substantially lower levels of soluble polymeric silicates than does the starting colloidal silica and affords lower defectivity levels when used in a slurry for CMP processing than does the starting colloidal silica.

Abstract: A container having two ports; first block valve having two diaphragm valves, each valve having a valve seat side and a diaphragm side, each valve seat side faces the other valve seat side, and connected to the first end of a dispense conduit, one diaphragm side connected to a first port, and another diaphragm side connected to vent and or vacuum; a second valve connected to a push gas conduit and a second port.

Abstract: A new route has been found leading to the formation of pentafluorosulfuranyl arylenes. In its broadest aspect the process comprises: effecting dehydrohalogenation or dehydrogenation of a pentafluorosulfuranyl cycloaliphatic compound represented by either of the structures: wherein R1-5 are H, halogen, C1-10 alkyl, C1-10 alkoxy, C1-10 thionyl, C1-10 alkyl ether, aryl and substituted aryl, thioether, sulfonyl, carboalkoxy, alkylamino, arylamino, alkylphosphoryl, alkylphosphonyl, arylphosphonyl, arylphosphoryl, and mixtures thereof and X is a halogen atom to form the pentafluorosufuranyl arylene represented by the structures: wherein R1-R5 are as represented above.

Abstract: The present invention is an apparatus for storing and delivering a low vapor pressure process chemical to a process tool for semiconductor fabrication, comprising: a) a bulk container for storing the process chemical; b) a process container for delivering the process chemical to the process tool; c) a first manifold for delivering process chemical from the bulk container to the process container; d) a solvent container containing a quantity of solvent, and; e) a second manifold for delivering the process chemical from the process container to a process tool. A process for using the apparatus is also contemplated.

Abstract: A process provides a ceramic film, such as a mesoporous silica film, on a substrate, such as a silicon wafer. The process includes preparing a film-forming fluid containing a ceramic precursor, a catalyst, a surfactant and a solvent, depositing the film-forming fluid on the substrate, and removing the solvent from the film-forming fluid on the substrate to produce the ceramic film on the substrate. The ceramic film has a dielectric constant below 2.3, a halide content of less than 1 ppm and a metal content of less than 500 ppm, making it useful for current and future microelectronics applications.

Abstract: System for the transportation and storage of a product which comprises a tank including cylindrical wall section and two ends, wherein the cylindrical wall section and two ends define a cylindrical tank periphery, and wherein the tank periphery has an interior and an exterior. The system utilizes a valve box that includes one or more side walls, a bottom wall, and a removable, sealable top cover which can be attached to the one or more side walls to seal the valve box, wherein the valve box side walls are sealably joined to the cylindrical wall. One or more process valves are disposed in the valve box, wherein each valve has a first and a second end, wherein each first end is connected to a pipe which passes through a wall of the valve box for introducing product into the tank or withdrawing product from the tank. A purge valve and pressure measurement means are installed in fluid communication with the valve box.

Abstract: An adsorbent based gas delivery system is provided which includes a storage and dispensing vessel having a gas outlet conduit and an interior section containing a solid-phase physical sorbent medium having physically sorptive affinity for a gas with the sorbent medium having the gas physically sorptively loaded thereon. A purifier is provided which includes at least one layer of purification media located in the interior section of the storage and dispensing vessel wherein the purification media is located adjacent to the gas outlet conduit of the vessel and provides that any gas desorbed from the sorbent medium must pass through and contact the purification media prior to exiting the vessel through the outlet conduit.

Abstract: A process and apparatus to deliver both process chemical and solvent for cleaning the process chemical in a solvent purge refill system along with an integral solvent sorption module, in a single “assembly” that permits ease of shipping, minimal end-user interaction, sufficient solvent for the solvent purge operation, without residual solvent, requiring disposal. This eliminates customer handling of the solvent, and eliminates the customer's need to find a solvent waste facility, as residual solvent can be returned in the same package in one piece/one step.

Abstract: A composition and associated methods for chemical mechanical planarization (or other polishing) are described. The composition may comprise an abrasive and a dispersed hybrid organic/inorganic particle. The composition may further comprise an alkyne compound. Two different methods for chemical mechanical planarization are disclosed. In one method (Method A), the CMP slurry composition employed in the method comprises comprise an abrasive and a dispersed hybrid organic/inorganic particle. In another method (Method B), the CMP slurry composition employed in the method comprises comprise an abrasive and an alkyne compound. The composition may further comprise an oxidizing agent in which case the composition is particularly useful in conjunction with the associated methods (A and B) for metal CMP applications (e.g., tungsten CMP).

Abstract: This invention relates to an improvement in a process for removing water from a hydride gas, and particularly ammonia, by contacting the hydride gas with a drying agent under conditions for effecting removal of the water. The improvement for significantly reducing the water content to trace levels in said hydride gas resides in the use of at least Group 1 metal oxide and at least one Group 2 metal oxide as a drying agent.

Abstract: A method of preparing vicinal difluoro aromatic compounds in high yield from hydroxy aromatic compounds using various bases and a method of preparing intermediates thereof. A method for making a vicinal difluoro halogenated aromatic compound including providing a tetrafluoro derivative of a halogen substituted aromatic compound, wherein the tetrafluoro derivative has two fluorine atoms on each of two adjacent carbons and at least one additional halogen substituent; reacting the tetrafluoro derivative with a reducing agent in presence of a base for a reaction time sufficient to form the vicinal difluoro halogenated aromatic compound containing two vicinal fluorine substituents and the at least one additional halogen substituent, wherein the reducing agent is used in a reducing agent effective amount sufficient to retain the at least one additional halogen substituent.

Abstract: A process for cleaning a deposit from an interior surface of a processing chamber includes generating a plasma from a cleaning gas including SO2F2 and contacting the interior surface with the plasma for a time sufficient to convert the deposit into a volatile product, thereby cleaning the deposit from the interior surface, in which the process is conducted in the absence of SF6. The deposits, which may be removed by the process of the invention, include silicone, silicone oxide, silicone nitride, tungsten, copper and aluminum.

Abstract: A process for producing BrSF5 includes providing a first reactant including a metal fluoride of fluorine and a metal M selected from the group consisting of alkali metals, alkaline earth metals, and Ag, providing a second reactant including BrF3, combining the first reactant and the second reactant to form a mixture, wherein the first reactant and the second reactant are allowed to contact for a period of time sufficient to produce MBrF4 in an amount stoichiometrically equivalent to a quantity of BrF3, and providing a third reactant including SF4, wherein the third reactant reacts with MBrF4. The process for producing BrSF5 can further include providing a fourth reactant including Br2, wherein the fourth reactant is provided before, during and/or after providing the first reactant, the second reactant and/or the third reactant. BrSF5 is produced in a yield of from about 50% to about 99.99% based on the amount of SF4.

Abstract: Addition of an SF5 group to organic compounds such as alkyl-substituted terminal alkenes, internal alkenes and cycloalkenes via the reaction with SF5Br is effected under liquid phase conditions and generally in the presence of a free radical initiator, preferably triethyl borane.

Abstract: This invention relates to a chemical vapor deposition process for forming Zr or Hf oxynitride films suitable for use in electronic applications such as gate dielectrics. The process comprises: a. delivering a Zr or Hf containing precursor in gaseous form to a chemical vapor deposition chamber, and, b. simultaneously delivering an oxygen source and a nitrogen source to the chamber separately, such that mixing of these sources with the precursor does not take place prior to delivery to the chamber, and, c. contacting the resultant reaction mixture with a substrate in said chamber, said substrate heated to an elevated temperature to effect deposition of the Zr or Hf oxynitride film, respectively. A silicon containing precursor may be added simultaneously to the chamber for forming Zr or Hf silicon oxynitride films.

Abstract: A process and apparatus to deliver both process chemical and solvent for cleaning the process chemical in a solvent purge refill system along with an integral solvent sorption module, in a single “assembly” that permits ease of shipping, minimal end-user interaction, sufficient solvent for the solvent purge operation, without residual solvent, requiring disposal. This eliminates customer handling of the solvent, and eliminates the customer's need to find a solvent waste facility, as residual solvent can be returned in the same package in one piece/one step.