Abstract: A process is provided for simultaneously producing a syngas product having a H2/CO ratio of less than 2.5 and a hydrogen gas product. The process includes increasing an amount of carbon dioxide being fed to a secondary reformer with carbon dioxide extracted from: (a) an effluent from a primary reformer and (b) an effluent from the secondary reformer. An apparatus for performing the process is also provided.

Abstract: A gas sampling and inlet device for a mass spectrometer has a hollow housing sleeve with an open inside region and a hollow inner sleeve with an open inside region, with the inner sleeve coaxial to the housing sleeve. One end of the housing sleeve and one end of the inner sleeve are connected with a single first end cap. The second end of the housing sleeve has a second end cap, but the second end of the inner sleeve is open such that the inside of the inner sleeve is open to the inside of the housing sleeve. The first end cap has a small diameter orifice adapted to receive a gaseous fluid. The second end cap is connected to a mass spectrometer. The second end cap has an orifice adapted to receive a gaseous fluid into the mass spectrometer that is substantially smaller in diameter than the orifice in the first end cap. The housing sleeve has a vacuum pump port to allow a vacuum to be created in the interior of the inlet device.

Abstract: An apparatus for removing particles from a gas in a high purity flowing gas system is provided which includes a flow tube inserted inline in the flowing gas system having an inlet and an outlet, a pressure sealed, electrically insulated feed-through integral to the flow tube, an emitter inserted through the feed-through into the flow tube to create a plasma in the gas to charge particles in the gas, and a collector surface in proximity to the emitter; whereby an electric field between the emitter and the collector surface draws the particles in the gas to the collector surface.

Abstract: Fluorine is removed from exhaust gas coming from a cleaning, etching or CVD operation in semiconductor fabrication by passing the gas through a fixed bed of activated alumina having a high total pore volume while maintaining the fluorine level of the gas passing into the alumina bed at 4 volume percent or less. Nitrogen can be added to the exhaust gas to control fluorine concentration. Using alumina having an initial total pore volume above 0.35 cc/gm and limiting the fluorine level in the exhaust gas enables the fixed bed to operate without undue plugging or sintering.

Abstract: A dynamic blending gas delivery system and method are disclosed. A blended gaseous mixture produced in accordance with the method is used in chemical vapor deposition tools or similar process tools. One embodiment is a multi-step method for processing a plurality of fluids to form a blended gaseous mixture and supplying the blended gaseous mixture to a distribution header from which the blended gaseous mixture is delivered to at least one tool. The first step is to supply a first fluid. The second step is to heat the first fluid to a temperature where at least some portion of the first fluid is a vapor. The third step is to superheat the vapor portion of the first fluid to a temperature sufficient to avoid condensation of the blended gaseous mixture delivered to the at least one tool. The fourth step is to supply a second fluid.

Abstract: A method for etching features into a substrate by removing substrate material from selected areas while leaving the substrate substantially unaffected in other areas is provided including the steps of providing the substrate to be etched into a process chamber, providing a patterned mask on the substrate as a guide for selective removal of the substrate, the substrate having a mask area and mask-free area, introducing a chemical species of halogenated heterocylic hydrocarbons into the process chamber, applying excitation energy to the process chamber to cause the chemical species to dissociate and form reactive ions and neutral species, and maintaining an electric potential gradient in an area adjacent the substrate to impose directionality and anisotropy to the etch.

Abstract: A process is described for depositing a copper film on a substrate surface by chemical vapor deposition of a copper precursor. The process includes treating a diffusion barrier layer surface and/or a deposited film with an adhesion-promoting agent and annealing the copper film to the substrate. Suitable adhesion-promoting agents include, e.g., organic halides, such as methylene chloride, diatomic chlorine, diatomic bromine, diatomic iodine, HCl, HBr and Hl. Processes of the invention provide copper-based films, wherein a texture of the copper-based films is predominantly (111). Such films provide substrates having enhanced adhesion between the diffusion barrier layer underlying the (111) film and the copper overlying the (111) film.

Abstract: A binderless X-type zeolite is used in a process for the reduction of the level of carbon dioxide and/or N2O in a gaseous mixture, the zeolite being obtained by converting the binder in a bound zeolite to zeolite such that the ratio of the adsorption capacity for carbon dioxide of the binderless zeolite to the adsorption capacity of the bound zeolite is greater than the weight ratio of the level of zeolite in the binderless zeolite to the level in the bound zeolite.

Abstract: The present invention is a composition for deposition of a mixed metal or metal compound layer, comprising a solventless mixture of at least two metal-ligand complex precursors, wherein the mixture is liquid at ambient conditions and the ligands are the same and are selected from the group consisting of alkyls, alkoxides, halides, hydrides, amides, imides, azides cyclopentadienyls, carbonyls, and their fluorine, oxygen and nitrogen substituted analogs.

Abstract: Complex mixed metal containing thin films can be deposited by CVD from liquid mixtures of metal complexes without solvent by direct liquid injection and by other precursor dispersing method such as aerosol delivery with subsequent annealing to improve electrical properties of the deposited films. This process has potential for commercial success in microelectronics device fabrication of dielectrics, ferroelectrics, barrier metals/electrodes, superconductors, catalysts, and protective coatings. Application of this process, particularly the CVD of ZrSnTiOx (zirconium tin titanate, or ZTT) and HfSnTiOx (hafnium tin titanate, or HTT) thin films has been studied successfully.

Abstract: The present invention describes a pressure swing adsorption (PSA) apparatus and process for the production of purified hydrogen from a feed gas stream containing heavy hydrocarbons (i.e., hydrocarbons having at least six carbons). The apparatus comprises at least one bed containing at least three layers. The layered adsorption zone contains a feed end with a low surface area adsorbent (20 to 400 m2/g) which comprises 2 to 20% of the total bed length followed by a layer of an intermediate surface area adsorbent (425 to 800 m2/g) which comprises 25 to 40 % of the total bed length and a final layer of high surface area adsorbent (825 to 2000 m2/g) which comprises 40 to 78% of the total bed length.

Abstract: A sulfurpentafluoride and substituted silyl ethyne compound that is useful as precursors for a variety of organic compounds are disclosed. At least one of the substituents on the silicon atom is hindered. Also disclosed are high-yielding processes for making the ethyne compound of the present invention.

Abstract: An apparatus and a method are disclosed for detecting particles in a particle-containing gas at a pressure greater than about 0 psig. The apparatus includes a gas distribution line containing a pressurized gas having a pressure greater than about 0 psig and a condensation nucleus counter in fluid communication with the pressurized gas in the gas distribution line. The condensation nucleus counter is adapted to receive a stream of the pressurized gas at a pressure substantially equal to the pressure of the pressurized gas in the gas distribution line. The condensation nucleus counter is constructed of materials resistant to corrosion and to reaction with the pressurized gas, which may be one or more reactive or toxic gases, such as those used in microchip processing, or an inert gas.

Abstract: A process for producing an oxygen enriched product includes: (a) providing a gas separation apparatus having at least one bed containing a mixture of at least two different nitrogen selective adsorbents, wherein the at least one bed is free of lithium cations; (b) feeding a feed gas containing oxygen and nitrogen into the gas separation apparatus to contact the at least one bed; and (c) recovering from the gas separation apparatus the oxygen enriched product. The process is preferably performed above ambient temperature and/or in a simplified four-step cycle.

Abstract: A process for deoxofluorinating a C2-hydroxyl group of a furanose, includes: (a) mixing the furanose and a deoxofluorinating agent in a solvent to form a reaction mixture, and (b) heating the reaction mixture to greater than about 50° C. The process provides deoxofluorinated products, such as 2-fluoro-arabinoses, in yields of at least 80% of theoretical.

Abstract: An apparatus and method are used to modify the surface chemistry of an article. The article to be surface treated has at least a surface region that includes at least one polymer. The method comprises the steps of placing one or more articles into a closed reaction chamber which is evacuated to a negative pressure. After evacuation, a treatment gas is rapidly injected into the reaction chamber, the treatment gas having an essentially predetermined composition comprising one or more components which are reactive with the articles within the reaction chamber. The treatment gas is allowed to react with the articles within the closed reaction chamber for a predetermined period of time. The treatment gas is then removed from within the reaction chamber and replaced with an inert gas at about atmospheric pressure. Finally, the treated articles are removed from the treatment chamber.

Abstract: The process removes from a diluted gas one or more fluorine compounds present at a first concentration in the diluted gas and concentrates the fluorine compounds. This is done by directly contacting the diluted gas with a cryogenic liquid having a temperature less than or equal to about −150° F., thereby producing a vapor lean in the fluorine compounds and liquid enriched with the fluorine compounds at a second concentration. The second concentration is greater than the first concentration.

Abstract: A process for fluorinating &bgr;-dicarbonyls to form the corresponding &agr;-fluorinated-&bgr;-dicarbonyl compounds is provided. The process is represented by the following reaction scheme: where R1 is H, alkyl or alkoxy, R2 is H, alkyl or perfluoroalkyl, and R3 is H, Cl, Br, I or alkyl. Use of oxygen in the fluorine stream yields a product which is 90-96% pure and contains radical fluorination impurity levels which are 10-20% lower than when oxygen is not used.

Abstract: A pressure swing adsorption process includes providing a pressure swing adsorption apparatus having six beds, and equalizing a pressure of each of the six beds in four steps, wherein at all times during the process, at least one of the six beds is providing offgas. The process is particularly suitable for purifying hydrogen from a feed gas mixture containing hydrogen and at least one of methane, carbon dioxide, carbon monoxide, nitrogen and water vapor.

Abstract: An apparatus for removing particles from a gas in a high purity flowing gas system is provided which includes a flow tube inserted inline in the flowing gas system having an inlet and an outlet, a pressure sealed, electrically insulated feed-through integral to the flow tube, an emitter inserted through the feed-through into the flow tube to create a plasma in the gas to charge particles in the gas, and a collector surface in proximity to the emitter; whereby an electric field between the emitter and the collector surface draws the particles in the gas to the collector surface.