Abstract: The apparatus and method provides accurate temperature measurement and control of living tissue during hyperthermia treatment. The temperature is measured by a radiometer tuned to the frequency bandwidth of an energy source providing energy for heating living tissue. The radiometer measures essentially the radiant energy and thereby the temperature of the same volume of living tissue that is heated by the source during the hyperthermia treatment.

Abstract: A semiconductor device package comprises a plurality of walls extending from a base member which has a pellet mounting surface associated therewith. The walls form an enclosure and each one of the walls has a lid receiving surface associated therewith. All of the lid receiving surfaces lie in a single geometric plane which intersects the geometric plane of the pellet mounting surface at an included angle of less than about 90.degree.. External leads protrude into the enclosures through one of the walls. A lid can be affixed to the lid receiving surfaces to hermetically seal the enclosure. The package is particularly useful when made to conform to the dimensions of the well known TO-220 package.

Abstract: An improved READ/WRITE circuit for a memory array of cells arranged in rows and columns, where each cell is coupled to a bit line via the conduction path of a single gating transistor which conducts in the source follower mode for one binary condition. The circuit includes a voltage multiplying circuit having an output at which is selectively produced either a read voltage, or a write voltage of significantly greater amplitude than the read voltage. The output of the voltage multiplying circuit is coupled via a level shifting decoder circuit, which passes either the read or the write voltage, to the control electrodes of selected gating transistors. The read voltage applied to the control electrode of a gating transistor turns it on just enough to enable the non-destructive-readout (NDRO) of the contents of its associated memory cell.

Abstract: A method of optically measuring the concentration of carriers in a doped region of a semiconductor wafer includes the step of selectively introducing conductivity modifiers into both the wafer and a test substrate simultaneously to form respectively the doped region in the wafer and a diffraction grating pattern in the substrate including periodically-spaced doped strips. The diffraction grating pattern is exposed to a beam of monochromatic light, and the intensity of one of the diffracted beams is measured, whereby the magnitude thereof is a measure of the carrier concentration in the doped region.

Abstract: Apparatus and method for sampling analog signals during successive time periods, the sampling signals being essentially aperiodic. The interval between sampling pulses is selected pseudo-randomly. A circuit for producing essentially aperiodic sampling signals gates a periodic signal through a number of delay means, each having a delay time that is a small fraction of each period, the number of delay means being selected by pseudo-random signals. Periodicity of quantization errors is broken up, thereby reducing concomitant unwanted harmonics of the sampling frequency that are introduced when the sampling signals occur at equal time intervals.

Abstract: Unbalanced long-tailed-pair configurations of field effect transistors thermally coupled to each other and matched except for dissimilar threshold potentials are used as the input stage of a comparator or of a feedback amplifier for maintaining the difference between their gate potentials constant.

Abstract: An apparatus for simultaneously processing a plurality of substrates comprises at least one novel chamber wherein at least one processing step is performed. Each chamber contains a plurality of spindles each having a substrate receiving surface upon which a substrate may be placed. Each of the spindles is at a different height from the floor of the chamber. Preferably the spindles are aligned in a single row according to height. Further, the chamber is provided with means for dispensing processing materials thereinto. The apparatus further comprises means for delivering a plurality of substrates to and from the processing chamber.

Abstract: A semiconductor wafer is cleansed of loose foreign surface matter and chemical impurities near the surface in an apparatus which passes superheated steam over the wafer. Condensate is permitted to form and drip off the wafer. After rising above 100.degree. C. the wafer becomes dry, and is removed from the apparatus and then permitted to cool.

Abstract: A field-effect device with closed floating gate geometry suitable for use as a storage element in a non-volatile memory array.

Abstract: A circuit for preventing the simultaneous application of contradictory input commands to a system and for filtering-out signals of shorter duration than a given period. The circuit includes an EXCLUSIVE-OR type gate adapted to receive input commands, whose output is "True" only when one of the input commands is present and no contradictory condition exists. The output of the gate is coupled to the input of a first flip flop which is set to a state indicative of the presence of the "True" signal at its input, when clocked at some time t.sub.1. The output of the first flip flop is logically combined with the one input command that is present to produce a signal which is applied to the input of a second flip flop. The second flip flop is placed in a state indicative of the value of its input, when clocked at some time t.sub.2, subsequent to t.sub.1. The one input command must be present for the duration t.sub.1 -t.sub.2 to place the second flip flop in its set state.

Abstract: A counter stage having a master section coupled to a slave section in which the transfer of signals between the master and the slave is selectively inhibited. In one embodiment of the invention, an inhibit transmission gate is logically "ANDED" with a clocked transmission gate between the master and slave sections of a counter stage. When the inhibit transmission gate is enabled, the counter stage operates normally. When the inhibit transmission gate is disabled, the states of the master and slave sections cannot change and the count in the stage does not advance. In this and other embodiments, clocking signals are continuously applied to the master-slave sections of a counting stage while transfer of data between the two sections is selectively inhibited. In still other embodiments, the clocking signals to a master-slave counter stage are selectively inhibited to prevent change in the stage.

Abstract: A field effect transistor is mounted in a flip-chip carrier which is in contact with one surface of a metal plate, the other surface of the plate being in contact with one surface of a block of beryllium oxide. A metal sheet, connected to a ground plane, is in contact with the one surface of the block and the surface of the block opposed therefrom. The plate and the sheet have a space therebetween. A film resistor is disposed upon the block in the space.

Abstract: A laser diode formed of a rectangular parallelopiped body of single crystalline semiconductor material includes regions of opposite conductivity type indium phosphide extending to opposite surfaces of the body. Within the body is a PN junction at which light can be generated. A stripe of a conductive material is on the surface of the body to which the P type region extends and forms an ohmic contact with the P type region. The stripe is spaced from the side surfaces of the body and extends to the end surfaces of the body. A film of germanium is on the portions of the surface of the P type region which is not covered by the conductive stripe. The germanium film serves to conduct heat from the body and forms a blocking junction with the P type region so as to confine the current through the body, across the light generating PN junction, away from the side surfaces of the body.

Abstract: A counter stage includes a clocked transmission gate which, when turned on, couples the output of the stage back to its input. A resetting circuit is connected to the input of the stage for selectively clamping the input to a fixed voltage level representative of a logic one or a logic zero. The resetting circuit is enabled only when the clocked transmission gate is turned off, whereby no current can flow from, or to, the output via the resetting means. This enables high speed of reset since the input of the stage is then easily discharged (or charged) to the selected fixed level via the resetting circuit.

Abstract: An improved process of forming planar silicon-on-sapphire MOS integrated circuit devices by a local oxidation process in which portions of a silicon layer on a sapphire substrate are thermally oxidized throughout the thickness of the layer to provide interdevice dielectric isolation and a substantially planar topology includes a step of ion implanting phosphorus, boron, or a combination thereof into the silicon prior to the thermal oxidation step. The implanted impurities have a stabilizing effect on the devices thereafter built in the remaining silicon.

Abstract: A complementary MOS inverter includes transistors each of which has a dual gate structure with the threshold voltage of the channel nearest the drain of each transistor arranged to be lower than that of the channel nearest the source of each transistor. This arrangement provides the cascode characteristics of dual gate structure, i.e., high breakdown voltage, high voltage gain, low drain output conductance, and relatively fast frequency response, but allows all four gate electrodes of the transistors to be connected in common, thus enabling relatively simple layout.

Abstract: A body of semiconductor material of an injection laser device, capable of operating at a power level up to a few milliwatts per micrometer of emitting width, has two opposed facet surfaces. On at least one of the facet surfaces is a protection layer of an insulating material having an optical thickness equal to approximately one-half the vacuum wavelength of the optical radiation emitted by the device.

Abstract: High vertical resolution can be obtained in a charge-coupled device (CCD) imager of the field transfer type by integrating charge in the A register in storage potential wells separated by potential barriers, with no empty potential wells separating the storage wells. Transfer of the integrated charge from the A to the B register at a speed which meets commercial television standards is obtained by employing a new type of multiple-phase clocking. Starting with the first row of charges S.sub.j =S.sub.1, the clock pulses successively separate each row of charges S.sub.j from the following row S.sub.j+1 by a space for a potential well and a potential barrier, and in synchronism with each such separation, the clock pulses shift the rows S.sub.j-1, S.sub.j-2. . . , if any, which previously have been separated, in unison, all by one row position. Then, after the first row of charges S.sub.

Abstract: An improved bipolar transistor including an emitter region having a relatively high-impurity-concentration portion separated from the base region of the transistor by a significantly lower-impurity-concentration portion disposed therebetween comprises a graded impurity concentration in the low-impurity-concentration portion with the lowest-impurity-concentration section thereof being disposed adjacent the base region.

Abstract: A synthetic focused image hologram of a white light image is recorded as variations in the depths of grooves of a diffraction grating in a layer of thermoplastic material located on a layer of photoconductive material. The thermoplastic layer is manufactured with initial, uniform, shallow grooves of the diffraction grating. A voltage is applied across the layers to deposit a uniform charge, a white-light image is projected on the thermoplastic layer, the layers are recharged and the thermoplastic layer is heated, whereby the initial shallow grooves are selectively deepened in accordance with the image.