Abstract: A method and apparatus associated with transferring data from a remote device to a recipient device having a first memory space and a second memory space. The method includes issuing a transfer command from the remote device to request transferring a set of data to the second memory space; temporarily storing the set of data in the first memory space pending a transfer to the second memory space; and appending the set of data to other sequential data in the first memory to obtain a transfer data block of a predetermined size for transfer to the second memory space. A corresponding apparatus is provided comprising circuitry configured to buffer write commands by characterizing each write command as being either a sequential write or a random write, and responsively appending data associated with sequential write commands in order to obtain a transfer block of a predetermined size.

Abstract: A non-volatile memory cell and method of use thereof. In some embodiments, an individually programmable resistive sense memory (RSM) element is connected in series with a programmable metallization cell (PMC) switching element. In operation, while the switching element is programmed to a first resistive state, no current passes through the RSM element and while a second resistive state is programmed to the RSM element, current passes through the RSM element.

Abstract: Method and apparatus for detecting source-based artifacts in a compressed video data set formed by outputting a baseband video data set from a source device and applying a codec algorithm thereto to generate the compressed video data set. In some embodiments, the compressed video data set is decompressed to provide a decoded video data set, and at least one source-based artifact in the decoded video set is detected responsive to a luminance value of at least one pixel in the decoded video data set, the at least one source-based artifact induced by the source prior to the compression encoding of the input video frame and detected independently of the input video frame.

Abstract: A data storage system is provided with a storage domain having an active zone subportion of storage space, and a command queue controller configured for short-stroking an actuator directed to the active zone. A method is provided for virtualizing a storage space to store user data in a first domain and redundant data in a second domain, partitioning each of the domains into active and inactive subportion storage zones, and executing a retrieve access command from one of the first and second domains depending on which domain's active zone contains an LBA associated with the retrieve access command.

Abstract: A cyclonic combustor comprising a combustion liner forming a combustion chamber having a generally cylindrical shape, a biomass feed inlet for receiving biomass particles under pressure, wherein the biomass feed inlet is formed so that the biomass particles are introduced into the ignition zone of the combustion chamber with a tangential component relative to the longitudinal axis of the combustion liner, and a plurality of air tuyeres formed through the combustion liner for receiving compressed air, wherein the plurality of air tuyeres are arranged to introduce the compressed air into the combustion chamber with a tangential component relative to the longitudinal axis of the combustion liner. A direct-fired biomass-fueled pressurized gas turbine system comprising a pressurized feed system, the cyclonic combustor, and a gas turbine. Methods of operating a cyclonic combustor and methods for direct firing a gas turbine.

Abstract: The present invention relates to a memory cell including a first reference layer having a first magnetization with a first magnetization direction and a second reference layer having a second magnetization with a second magnetization direction substantially perpendicular to the first magnetization direction. A storage layer is disposed between the first reference layer and second reference layer and has a third magnetization direction about 45° from the first magnetization direction and about 135° from the second magnetization direction when the memory cell is in a first data state, and a fourth magnetization direction opposite the third magnetization direction when the memory cell is in a second data state.

Abstract: A controlled insertion device is provided for securing an electronic module in a cabinet, the device comprising a strike fixable to the cabinet and a latch engageable with the strike for imparting a longitudinal insertion force on the module for making an electrical connection while simultaneously imparting a lateral retention force on the cabinet defining a preselected clearance between the module and the cabinet.

Abstract: In some embodiments, a magnetic reader comprises first and second shields extending from an air bearing surface (ABS), a magnetoresistive stack is located between the first and second shields, and a flux guide is separated from the magnetoresistive stack while connecting the first and second shields. The flux guide magnetically couples the distal end of the magnetoresistive stack to the first shield.

Abstract: A magnetic sensor assembly including first and second shields, and a sensor stack between the first and second shields. The sensor stack includes a seed layer adjacent the first shield, a cap layer adjacent the second shield, and a magnetic sensor between the seed layer and the cap layer, wherein at least one of the seed layer and the cap layer has a synthetic antiferromagnetic structure.

Abstract: Method and apparatus for flushing cached writeback data to a storage array. Sets of writeback data are accumulated in a cache memory in an array with a view toward maintaining a substantially uniform distribution of the data across different locations of the storage array. The arrayed sets of data are thereafter transferred from the cache memory to the storage array substantially at a rate at which additional sets of writeback data are provided to the cache memory by a host. Each set of writeback data preferably comprises a plurality of contiguous data blocks, and are preferably written (flushed) to the storage in conjunction with the operation of a separate access command within a selected proximity range of the data with respect to the storage array. A stripe data descriptor (SDD) is preferably maintained for each set of writeback data in the array.

Abstract: Paraffin compositions including mainly even carbon number paraffins, and a method for manufacturing the same, is disclosed herein. In one embodiment, the method involves contacting naturally occurring fatty acid/glycerides with hydrogen in a slurry bubble column reactor containing bimetallic catalysts with equivalent particle diameters from about 10 to about 400 micron. The even carbon number compositions are particularly useful as phase change material.

Abstract: A non-limiting embodiment of a magnetic writer has at least a write element having a write element tip and a conductive structure adjacent the write element. The conductive structure has at least two conductive elements positioned substantially parallel to one another and separated by an electrically insulating material. Each of the conductive elements carries a time-varying signal to generate an oscillating magnetic field from a displacement current between the two conductive elements, with the oscillating magnetic field being proximate the write element tip and extending parallel to the air bearing surface. A frequency of the oscillating magnetic field is a function of a frequency of the time-varying signal.

Abstract: A workpiece supporting assembly, having a body member with an internal workpiece channel and a plurality of body openings communicating with the internal workpiece channel, supports a workpiece within the workpiece channel so that end portions of the workpiece extend from the body openings. The body member has a plurality of arbors, each arbor having a longitudinal axis that is coincident with a datum axis of one of the extending workpiece portions. A turning machine grips one arbor at a time and rotates the body member about the selected longitudinal axis for machining the extended workpiece portion.

Abstract: A hard disk drive includes a base member, a disk which is a data storage medium to rotate at a high speed on the base member, and a head stack assembly (HSA) having a head slider including a magnetic head to write data on the disk or to reproduce data recorded on the disc, and an ABS pattern formed on a disk facing surface of the head slider to generate a lifting force, and is rotatably mounted on the base member so that the head slider moves between inner circumferences and outer circumferences of the disk in a floating state over the disc, wherein if a center line of the ABS pattern is an ABS line and a straight line extending in a direction in which an air flow induced due to the high speed rotation of the disk enters the ABS pattern is an air flow line, a crossing angle between the ABS line and the air flow line is reduced as the head slider moves from the outer circumferences to the inner circumferences.

Abstract: A method of fabricating a magnetic head is provided. The method of fabricating the magnetic head includes forming a writing head on a writing head area, forming an insulating layer having an inclined surface, forming a reading head on the inclined surface of the insulating layer, and forming an air bearing surface by polishing the surfaces of the writing head. Forming the reading head includes forming a first shield layer, a reading sensor, and a second shield layer.

Abstract: A non-volatile memory cell and associated method of use. In accordance with some embodiments, the memory cell includes a transistor comprising source and drain regions spanned by a gate region, and a resistive sense element (RSE) connected to the drain region of the transistor. The RSE is programmed to a first resistance by flowing a first write current through the RSE and then through the drain and source regions of the transistor. The RSE is programmed to a second resistance by flowing a second write current through the drain region and then through the RSE, the second write current bypassing the source region.

Abstract: A semiconductor device for accessing non-volatile memory cell is provided. In some embodiments, the semiconductor device has a vertical stack of semiconductor layers including a source, a drain, and a well. An application of a drain-source bias voltage to the semiconductor device generates a punchthrough mechanism across the well to initiate a flow of current between the source and the drain.

Abstract: A method and apparatus for reading data from a non-volatile memory cell. In some embodiments, a cross-point array of non-volatile memory cells is arranged into rows and columns that are each controlled by a line driver. A read circuit is provided that is capable of reading a logical state of a predetermined memory cell by differentiating a non-integrated first reference value from a non-integrated second reference value. Further, each reference value is measured immediately after configuring the column corresponding to the predetermined memory cell to produce a first and second amount of current.

Abstract: A method for a slider pad that allows for contact to be mitigated without plastic deformation. Various embodiments of the present disclosure are generally directed to a slider that presents a transducer and has at least one air bearing surface (ABS) feature. The ABS feature comprises a pair of sidewalls spaced a distance X apart. A pad is deposited on the ABS feature so that the pad comprises a hemispherical cross-section and has a circumferential diameter greater than X. As configured, the pad may mitigate contact between the pad and a media surface with elastic deformation.

Abstract: A non-volatile memory cell and associated method is disclosed that includes a non-ohmic selection layer. In accordance with some embodiments, a non-volatile memory cell consists of a resistive sense element (RSE) coupled to a non-ohmic selection layer. The selection layer is configured to transition from a first resistive state to a second resistive state in response to a current greater than or equal to a predetermined threshold.