Abstract: An apparatus and associated method for generating a reference voltage with dummy resistive sense element regions. A first resistance distribution is obtained for a first dummy region of resistance sense elements and a second resistance distribution is obtained for a second dummy region of resistive sense elements. A user resistive sense element from a user region is assigned to a selected resistive sense element of one of the first or second dummy regions in relation to the first and second resistance distributions.

Abstract: Apparatus and method for write current compensation in a non-volatile memory cell, such as but not limited to spin-torque transfer random access memory (STRAM) or resistive random access memory (RRAM). In accordance with some embodiments, a non-volatile memory cell has a resistive sense element (RSE) coupled to a switching device, the RSE having a hard programming direction and an easy programming direction opposite the hard programming direction. A voltage boosting circuit includes a capacitor which adds charge to a nominal non-zero voltage supplied by a voltage source to a node to generate a temporarily boosted voltage. The boosted voltage is applied to the switching device when the RSE is programmed in the hard programming direction.

Abstract: Various embodiments of the present invention are generally directed to a method and apparatus for sensing a programmed state of a memory cell, such as a spin-torque transfer random access memory (STRAM) cell. A first read current is applied to the memory cell to generate a first voltage. A second read current is subsequently applied to the memory cell to generate a second voltage, with the second read current being proportional in magnitude to the first read current. A comparison is made between the first and second voltages to determine the programmed state of the memory cell.

Abstract: An anti-parallel diode structure and method of fabrication is presently disclosed. In some embodiments, an anti-parallel diode structure has a semiconductor region comprising a first insulator layer disposed between a first semiconductor layer and a second semiconductor layer. The semiconductor region can be bound on a first side by a first metal material and bound on a second side by a second metal material so that current below a predetermined value is prevented from passing through the semiconductor region and current above the predetermined value passes through the semiconductor region.

Abstract: Methods of making and using a vehicle transport apparatus are provided. An exemplary method of making the vehicle transport apparatus includes at least the steps of providing a beam with a kingpin attached on each a proximal and distal end, linking a single and only axle in vertical and horizontal sliding support of the beam, wherein the beam adjusts vertically relative to the axle, and the axle adjusts horizontally relative to the beam, and wherein the beam is unsupported by the single and only axle during at least one operating mode of the beam, attaching a guide post to the axle, securing a vertical slide member to the beam and in sliding contact with the guide post, and interposing a vertical position control apparatus between the vertical slide member and the axle, the vertical position control apparatus controlling the vertical position of the beam relative to the axle.

Abstract: An apparatus and associated method for a non-volatile memory cell, such as a multi-bit magnetic random access memory cell. In accordance with various embodiments, a first magnetic tunnel junction (MTJ) is adjacent to a second MTJ having a magnetic filter. The first MTJ is programmed to a first logical state with a first magnetic flux while the magnetic filter absorbs the first magnetic flux to prevent the second MTJ from being programmed.

Abstract: An apparatus and associated method for a multi-bit memory capable of being selected with a magnetic layer. Various embodiments of the present invention are generally directed to a first selection layer with a low coercivity that is disposed between first and second storage layers that each have a high coercivity. In response to magnetic saturation of the first selection layer, programming of a logical state to the second storage layer is allowed.

Abstract: An apparatus and method for enhancing read and write sense margin in a memory cell having a resistive sense element (RSE), such as but not limited to a resistive random access memory (RRAM) element or a spin-torque transfer random access memory (STRAM) element. The RSE has a hard programming direction and an easy programming direction. A write current is applied in either the hard programming direction or the easy programming direction to set the RSE to a selected programmed state. A read circuit subsequently passes a read sense current through the cell in the hard programming direction to sense the selected programmed state of the cell.

Abstract: A method and apparatus associated with circuitry configured to perform a selected one of a plurality of different data integrity operations on stored data in relation to a manner in which the data are to be retrieved. In some embodiments a data storage device is partitioned into a plurality of partitions, and one of a plurality of different data integrity operations is performed on stored data in relation to which partition of the plurality of partitions the stored data is in.

Abstract: A method and apparatus for aligning an input shaft of a wind turbine generator with an output shaft of a wind turbine are disclosed. Preferably, the method includes placing a push plate of a wind turbine alignment tool into pressing contact with a selected support flange of a wind turbine generator identified by a misalignment measurement device. With the push plate positioned, an indexing means of the wind turbine alignment tool is advanced along an adjustment link member of the wind turbine alignment tool to impart an alignment force onto the selected support flange to align the input shaft of the wind turbine generator with the output shaft of the wind turbine. The method preferably concludes by rechecking the alignment of the input shaft of the wind turbine generator with the output shaft of the wind turbine.

Abstract: Various embodiments of the present invention are generally directed to a method of forming a conductive via plug in a semiconductor device. A first and second metal layer are electrically connected by a via plug that is formed by depositing a tungsten seed layer on a plurality of metal barrier layers within a recess using atomic layer deposition. The recess is then filled with tungsten using chemical vapor deposition.

Abstract: Various embodiments are generally directed to a method and apparatus associated with operating a first memory device with multiple interfaces and a status register. In some embodiments, a first interface is engaged by a host. A memory device that has a plurality of memory cells comprised of at least a magnetic tunneling junction and a spin polarizing magnetic material is connected to a second interface. A status register is maintained by logging at least an error or busy signal during data transfer operations through the first and second interfaces.

Abstract: A method for the encapsulation of contaminant particles on the surface of a component. The method includes encapsulating the contaminant particles with an organic coating such that the contaminant particles are immobilized. The coating enables the immobilization of particles having a particle size of less than 0.5 ?m. The method is particularly useful in the manufacture of precision devices, such as disk drives.

Abstract: Apparatus and associated method for writing data to a non-volatile memory cell, such as spin-torque transfer random access memory (STRAM). In accordance with some embodiments, a resistive sense element (RSE) has a heat assist region, magnetic tunneling junction (MTJ), and pinned region. When a first logical state is written to the MTJ with a spin polarized current, the pinned and heat assist regions each have a substantially zero net magnetic moment. When a second logical state is written to the MTJ with a static magnetic field, the pinned region has a substantially zero net magnetic moment and the heat assist region has a non-zero net magnetic moment.

Abstract: An apparatus and method for improving the fuel range of an aircraft are provided. The aircraft includes a fuselage with a front windshield, and an external skin providing a top cover for a cockpit of the aircraft. The apparatus includes an aerodynamic fairing secured adjacent the windshield and enclosing the external skin covering the cockpit for a reduction in an abrupt change in area encountered by air flowing along the length of the fuselage. An enclosure is formed between the aerodynamic fairing and the external skin in which a fuel bladder, configured with a reticulated polyurethane foam insert, may be disposed for added fuel capacity of the aircraft. The method includes steps of providing an aerodynamic fairing configured to balance the flow of fluid over the aircraft during flight, and securing the aerodynamic fairing atop the aircraft and adjacent the front windshield.

Abstract: An apparatus and associated method for operating a portable light assembly. In accordance with some embodiments, a frame providing a bridge and defining a transport region and a deployment region is slidingly connected to a mast. An arm is further connected to the mast by a hinge while a light fixture is connected to the arm. In various embodiments, the light fixture is capable of transitioning from a deployed position where the mast engages the deployment region and a transport position where the mast and light fixture are disposed within the transport region.

Abstract: Provided is a vertical magnetic recording head having a main pole, a return yoke, and a coil, all of which are formed on a substrate, and a method of manufacturing the same. The main pole includes a vertical portion which is vertical to the substrate, a horizontal portion that connects a lower part of the vertical portion to the return yoke, and a main pole tip formed on the vertical portion of the main pole. The main pole tip has a conical shape vertical to the substrate.

Abstract: A stilt device having a front extendible strut and a cooperating rear extendible strut pivotally connected to a base member and a shoe plate, the front and rear extendible struts being disposed in a parallelogram relationship. The rear extendible strut has a rear member and a rear extendible member. A leg support pole is supported at one end by the rear extendible member and extends for its other end to be connected to a workman's leg to provide stability and to thereby enable the replacement of height determining extendible members, the distance from the shoe plate being a common vertical difference that is unchanged the extension of the extendible struts or by components thereof. For stilts of increased height the springs of the damping assemblies are selectively stiffened.

Abstract: Method and apparatus for attenuating resonances in a flex circuit which interconnects a stationary element and a moveable element, such as a connector and a head stack assembly (HSA) in a data storage device. An intermediary portion of the flex circuit forms a dynamic loop between the stationary element and the moveable element. A damper member is attached to the flex circuit so as to continuously extend adjacent the stationary element and along less than an overall extent of the dynamic loop. The damper member attenuates resonances excited in the flex circuit during movement of the moveable element.

Abstract: A disc drive snubber for protection of a disc drive disc from mechanical shock, the snubber positioned to limit the deflection of the disc in the operational mode, the position of the disc snubber determined in response to user reported defects. The snubber, positioned beneath the disc in near proximity to the outer diameter of the disc, extends along about a 60 degree segment of the disc and is made of a FIPG material.