Abstract: The present invention provides a coupled polymer, which is prepared by reacting a living alkali metal-terminated polymer with a particular coupling agent. The coupling agent has the formula ##STR1## where R1, R3 are independently selected from the group consisting of aliphatic alkyl and alkenyl, and hydrogen, and R.sub.2 is alkylene, alkenylene, divalent cycloalkylene, divalent arenyl, or a C.sub.1-17 divalent hydrocarbyl containing ether or ketone group. By means of the particular coupling agent, the coupling efficiency is relatively high, and no harmful materials will be generated to corrode the pipes. The coupled polymer obtained has a coupling number of less than 3, and good rubbery physical properties, transparency, and wear resistance.

Abstract: An improved satchel with illuminated display comprising a sack having walls which define an interior space within the sack. The sack has a display-holder permanently fixedly attached to the outside of the sack. The display-holder has a display-receiving pocket as well as a passage between the display-receiving pocket and the interior space within the sack. This permits a display to be easily taken in and out of the display-holder. Since the display-holder is accessible solely from the interior space within the sack there is a great deal of security. The sack also has a display within the display-holder and a number of electric light sources which can be flashed or turned on to illuminate the display. The satchel carries its own source of electrical current.

Abstract: A current-direction sense-amplifier circuit for amplifying data signal read out from a bit-line of memory cells is disclosed. The current-direction sense-amplifier circuit includes two positive feedback loop circuits coupled each other. The first positive feedback loop circuit which having a data input terminal for receiving the data signal, first output node, and second output node for amplifying a differential voltage between a voltage of the first output node and a voltage of the second output node. The second positive feedback loop circuits being coupled with the first positive feedback loop circuit at the first output node and second output node of node so as to enlarge the loop voltage gain and make the increment and the decrement of voltage swing more symmetrical.

Abstract: The lens switch apparatus of present invention comprises lens mounts, lenses, a carrier, rotating axes, at least one belt, gears, motion mechanisms and the power sources. The lens mounts include the first lens mount and the second lens mount. Several lenses are positioned on the lens mounts. The carrier, on which the above lens and the lens mounts are positioned, serves as the plate to move the lens. The motion mechanism, which further includes the first motion mechanism and the second motion mechanism. The first motion mechanism move the carrier toward the first direction to focus lens properly. Besides, the second motion mechanism move the first motion mechanism toward the second direction to align lens to the optical axis. The rotating axis, which comprises the first rotating axis and the second rotating axis. Through the first rotating axis, the first lens mount is coupled to the carrier. Similarly, through the second rotating axis, the second lens mount is coupled to the carrier.

Abstract: The present invention discloses a chemical mechanical polishing method with in-line thickness detection. First, the semiconductor wafer is loaded into CMP equipment and is putted on a loading table for the preparation of a CMP process. The CMP process is performed on the wafer for polishing. The CMP process is interrupted and the thickness of a polished thin film layer is detected by using an in-line thickness measurement technique. The thickness is determined whether or not being accepted by a specification of the CMP process. As the thickness is accepted by the specification, the wafer is cleaned, dried and moved out from the CMP equipment. Alternatively, the thickness is not accepted by the specification, it must be determined whether or not the thickness is less than the low limit of the specification. As the thickness is smaller than the low limit, the wafer is cleaned, dried after it is moved out from the CMP equipment.

Abstract: A shackle lock having a shackle with at least two ends and whose length can be adjusted, a lock body, and a lock stud is disclosed. One end of the shackle is secured to the lock body and secured at another end to the lock stud. The lock body has at least one insertion hole, and the shackle lock also has at least one intermadiate shackle lock stud which is connected in between two ends of the shackle. The effective shackle length can be adjusted easily so as to be used both as a large size shackle lock and as a small size shackle lock.

Abstract: A temperature sensing device for a food storage container accurately detects the internal temperature of a storage chamber to achieve an accurate on/off control for heating and cooling cycles by minimizing a temperature fluctuation existing in the storage chamber. The temperature sensing device includes a temperature sensor to sense a temperature of the storage chamber and generate an electrical signal representative of the sensed temperature; a control unit, having a microprocessor, to control the cooling system based on the electrical signal generated by the temperature sensor; and a metallic fixing bracket for fixing the temperature sensor to the inner liner at a position near an inlet portion of an evaporator receiving a cooled refrigerant from a condenser, such that the temperature sensor is in close contact with the outer surface of an inner liner of the storage chamber, to establish a thermally conductive path between the inner liner and the temperature sensor.

Abstract: A planar inverted-cone susceptor, preferably made of silicon carbide, inversely disposed between a substrate and a holder of the Rapid Thermal Processor (RTP) so as to perform heat compensation on the substrate. Because the substrate is directly supported by the inverted-cone susceptor, heat stored in the wafer can be rapidly received by the inverted-cone susceptor. Thermal stress and thermal gradient can be effectively decreased in the wafer.

Abstract: A technology for eliminating acoustic resonance in a fluorescent lamp is disclosed in the present invention. The feature of the invention is to provide a harmonic compensating device to work with the fluorescent lamp and its relative peripheral circuits, such that current-dependent sources are provided to modulate the current in the lamp, thereby spreading the harmonic energy of the current in the lamp and eliminating acoustic resonance.

Abstract: A cell plate voltage generator of a semiconductor memory device for selectively providing a cell plate potential having various voltages to thereby substantially reduce the time required for a burn-in test includes a half Vdd generation block for producing a half voltage having a half of an external potential inputted from outside of the semiconductor memory device; a Vbb generation block for generating a negative voltage; a cell plate voltage selection block for generating a plurality of control signals; a transmission block having a plurality of transmission circuits for delivering selectively the half voltage, the negative voltage, the source voltage, and the ground voltage in accordance with the control signals; and a level shifter for level shifting at least two of the control signals in order to avert the voltage drop in threshold voltages of the transmission circuits.

Abstract: A method of forming a trench power metal-oxide semiconductor (MOS) transistor over a semiconductor substrate is proposed in the present invention. First, a pad oxide layer is formed on said substrate, a masking layer is then formed on the pad oxide layer. Next, the masking layer and the pad oxide layer are defined the trench pattern, and the substrate is etched to form the trench structure. A gate oxide layer is formed on the outer surface of the trench structure. Then, a conducting layer is fill into said trench structure for serving as a gate structure. The doped areas are formed in the substrate to serve as source structures. Next, the sidewall spacers are formed on sidewalls of the masking layer and the pad oxide layer. A field oxide layer is then formed on the conducting layer.

Abstract: The present invention discloses a Schmitt-trigger circuit with less power consumption by reducing the amount of the required DC current. The Schmitt-trigger circuit disclosed in the present invention basically encompasses a comparison circuit, a first current cutting circuit, and a second current cutting circuit. The comparison circuit receives the input signal and then generates the output signal. Both the first and second current cutting circuits feed in the output signal, and then generate feedback signals to feed the comparison circuit for cutting the DC current path when the input signal rises or falls to predetermined trigger points. When there is only one of the first and second current cutting circuits is required, the higher or lower trigger point can be adjusted without necessary to vary the size-ratio of the PMOS and NMOS transistors.

Abstract: An optical receiver preamplifier provides a transimpedance feedback path between the output node and the input node that comprises a feedback resister and the two diodes are coupled ("paralleled") in opposite direction. While the input current signal is too large, and the voltage reach the diode's threshold voltage. The preamplifier can provide current path passing the signal to solve the problem that charge-discharge time is not uniform and changed over duty-cycle. Further, the two diodes are coupled ("paralleled") in opposite direction make photo-diode working under the large-signal current by anode or cathode input. Thus, increase the dynamic range of the transimpedance preamplifier. Besides, the low impedance of series resistance connects with input node and feedback network. The influence of bandwidth and stability that the aforementioned two paralleled diodes resulted in diode junction capacitor will reduce due to the low impedance of series resistance.

Abstract: There is provided a novel lithium nickel complex oxide represented by the general formula:Li.sub.y-x1 Ni.sub.1-x2 M.sub.x O.sub.2wherein M represents one selected from the group consisting of Al, Fe, Co, Mn and Mg, x=x.sub.1 +x.sub.2, O<x.sub.1 .ltoreq.0.2, O<x.sub.2 .ltoreq.0.5, 0<x.ltoreq.0.5, and 0.9.ltoreq.y.ltoreq.1.3, and wherein the crystals have been sufficiently developed and are highly purified, and a positive electrode active material for a secondary battery whose stability of high discharge capacity is excellent.

Abstract: A lamp base structure of a series of Christmas lamps, wherein a through hole and an engaging hole are installed on the central portion and the near rim portion of the groove seat, respectively, while a central conducting piece and an outer conducting piece are installed in the through hole and the engaging hole. An engaging groove is formed on the inner peripheral wall of the lamp base corresponding to said engaging hole. A bent portion is formed between the upper end penetrating portion and the lower end portion of the outer conducting piece, and the penetrating portion is shifted toward the center of the lamp base groove. An engaging block is engaged in the gap of the engaging hole above the bent portion of the outer conducting piece, wherein the width of said groove engaging hole corresponds to the length of the bent portion between the lower end portion and the upper end penetrating portion of the outer conducting piece.

Abstract: A method of forming a trench capacitor over a semiconductor substrate comprises the following steps. First, a nitride layer is formed on the substrate. Then, a first oxide layer is formed on the nitride layer. Next, the first oxide layer and the nitride layer are etched to expose a portion of the surface of the substrate. An etching back step is performed to etch the nitride layer to pull back the sidewalls of the nitride layer. Next, the second oxide layer is formed above the first oxide layer, the nitride layer and the substrate. An etching step is done to form the trench structure on the substrate by using the first oxide layer as a mask. Then, a wet etching step is performed to remove the first oxide layer and the second oxide layer. Next, a doping step is done to form the doped region in the trench structure. A dielectric layer is then formed above the doped region. A conducting layer is formed on the dielectric layer, wherein the conducting layer is coupled with a drain.

Abstract: The present invention provides a method of forming trench capacitor with a sacrificial silicon nitride. A deep trench structure is formed in a substrate. A TEOS oxide layer is formed on the substrate and filled in said trench region, etched to a first level subsequently, wherein a portion of the TEOS oxide layer is remained in the trench region and a portion of the substrate exposed to form a trench sidewall. A thermally oxidation process is performed to form a collar oxide on the exposed substrate. A silicon nitride sidewall is formed on the collar oxide, then removing the residual TEOS oxide layer by wet etching. A bottom cell plate is formed in the lower trench region. The silicon nitride sidewall is removed. A dielectric film is formed along a surface of the bottom cell plate, the collar oxide, and the substrate, subsequently, a first conductive layer is formed on said dielectric film and refill in the trench region.

Abstract: The invention relates to a liquid purification apparatus (10) adapted to employ the purifying effects of the heavy metal silver under electrolysis. The apparatus (10) has a chamber (14) formed with spaced apart inlet and outlet openings (16,18) whereby liquid can flow through chamber (14) from inlet opening (16) to outlet opening (18). An electrolytic unit (20) has at least two spaced apart silver electrodes (22,24) mounted in chamber (14) in the path of the liquid flow. An electric circuit means (32) controls operation of electrodes (22,24) with a first timing means (62) for providing a pulsed current to electrodes (22,24).