Abstract: A diode in a semiconductor body has two laterally adjacent regions. Each region has buried portions. The first and second regions are doped with opposite conductivity type dopants. A buried P-N junction exists where the buried portions meet. Since the junction is buried, surface breakdown effects are greatly reduced. The lateral orientation provides for easier series connection or several such diodes. A method for making a diode in a body comprises forming two laterally adjacent buried portions of respective opposite conductivity type regions. A contact portion of at least one region is formed extending to the surface of the body.

Abstract: A radiation hard memory cell comprises on an insulating substrate a low output impedance inverter made of a monocrystalline semiconductor and a high output impedance inverter made of a non-crystalline semiconductor in order to save space. The semiconductor can be Si and a barrier layer can be used. A method for making the cell comprises depositing and defining active layers, making gate insulating layers on the active layers, forming gates on the insulating layers, and forming source and drain regions in the active layers. One inverter can have its active and insulating layers formed before the remaining active layer is formed. The remaining active layer can then be simultaneously formed with the gate of the one active layer.

Abstract: The totally passive object identification system and method involves the use of a radiometer to produce a signal corresponding to the radiation pattern generated by an object of interest in the frequency band to which the radiometer is sensitive, and involves comparing the produced signal with a signal corresponding to a given class of objects. The comparator produces a signal indicative of correspondence or a lack of correspondence between the object of interest and the given class of objects.

Abstract: A plurality of CCD imagers have their respective image registers arranged in side-by-side alignment respectively to receive contiguous portions of an image. The CCD imagers have respective field storage registers disposed on both sides of the arrayed image registers. The CCD imagers are operated with the direction of TDI operation relative to the positioning of the imager chosen such that a combined TDI operation in one direction is obtained for the plurality of CCD imagers.

Abstract: An infra-red charge-coupled device (IR-CCD) image sensor includes a substrate of single crystalline silicon having at one surface thereof a plurality of detectors arranged in space relation along a plurality of columns and a separate charge-coupled device (CCD) register extending along each column of detectors between the columns. Each CCD register includes a buried channel within the substrate and extending along and spaced from the detectors in the adjacent columns and at least two sets of gates extending completely across the space between the columns of detectors and crossing the buried channel. The gates are insulated from this substrate surface by a layer of silicon oxide. A first set of the gates are spaced apart along the column of detectors with each of the first gates having an extension extending over and insulated from the space between two adjacent detectors of one of the adjacent columns.

Abstract: A common island complementary-metal-oxide semiconductor device comprising an island of semiconductor material disposed on an insulating substrate is disclosed. Both N-channel and P-Channel transistors are formed in the common island of semiconductor material, but the gate electrode does not extend over the sidewalls of the silicon island. In order to electrically isolate the source and drain regions for each transistor, the areas of the silicon island outside of the channel region are doped with the appropriate dopants to form back-to-back diodes in series with respect to the source and drain regions. Additionally, a diode is disposed between both the N-channel and P-channel transistors to electrically isolate the two transistors.

Abstract: A method for partitioning an original string of data elements into two substrings on a distributed processing system is disclosed. The elements are each of a first or a second type and the original string consists of a plurality of string fragments each composed of elements of only one type. The method operates to pass the identity of each fragment tail element to the head element of the next fragment, further from a true head element of the original string, composed of the same type elements as the tail element. The passed identities enable forming the two substrings from fragments of the same type elements.

Abstract: The frequency response of a component whose output decreases past a first frequency is extended by employing apparatus which provides for a signal source to be coupled to a component transmission line through a coupling impedance of about zero. The transmission line is resonant at a second frequency greater than the first frequency and the characteristic impedance of the transmission line is selected such that the voltage drop at or near direct current across the component is about equal to the voltage drop across the component at the second frequency. The method of operation comprises providing a signal, forming a transmission line which is resonant at the second frequency and coupling the transmission line to both the component and the signal source. The characteristic impedance of the transmission line is adjusted such that the voltage across the component at or near direct current is about equal to the voltage across the component at the second frequency.

Abstract: An optical fiber output coupler for application to a power laser beam transmitting optical fiber is disclosed. The output coupler includes lenses for expanding the fiber delivered beam in order to enable minimization of the diameter of a focussed spot provided by a focussing lens of the coupler.

Abstract: A semiconductor device and method of making is disclosed wherein the semiconductor device includes a MOSFET with very shallow source and drain regions. The high sheet resistivity normally associated with such shallow regions is obviated by growing an epitaxial layer directly from the surface of the shallow source and drain regions, highly doping the layer, then forming a layer of refractory metal silicide on the epitaxial layer. The resulting structure yields a MOSFET having very shallow source and drain regions with very low sheet resistance.

Abstract: A vertical MOSFET device includes a semiconductor wafer having source, body and drain regions of alternate conductivity type disposed therein. The source and drain regions are located so as to define the length and width of a channel region in the body region at a surface of the wafer. The body region further includes a similar conductivity type supplementary region having a relatively high areal dopant concentration. The supplementary region, which can be fabricated by ion implantation, extends laterally beneath a portion of the channel region. A source electrode is disposed on one wafer surface and a drain electrode is disposed on an opposing wafer surface.

Abstract: A memory cell circuit has a pair of inverters and a means, such as gate-drain coupled capacitors, for providing a greater voltage difference at MOS transistor gates during radiation than an initial value. This tends to preserve the latch logic state and thus prevent a change in logic state during radiation.

Abstract: A signal processing apparatus and method extend the frequency response of a component whose output decreases past a first frequency. The apparatus responds to a signal having a range of frequencies which is applied to a component transmission line and the component transmission line is coupled to the component. The component transmission line is resonant at a second frequency greater than the first frequency and has a source impedance and an input impedance which are not matched. The source impedance is greater than the impedance of the component. The method comprises providing a signal, forming a transmission line which is resonant at the second frequency and coupling the transmission line to both the component and the signal source. The source impedance is adjusted such that the voltage across the component at a low frequency limit is about equal to the voltage across the component at the second frequency.

Abstract: An improved electron beam resist structure comprises an organic planarizing layer which has been treated with an ion beam for a time sufficient to render it conductive and an electron beam resist layer thereover. The electron beam resist layer is preferably oxygen plasma resistant. When the resist layer is not resistant to oxygen plasma and it is desired to develop the planarizing layer by oxygen plasma, the structure additionally includes a thin hard mask layer, suitably of silicon dioxide, interposed between the conductive planarizing layer and the resist layer.

Abstract: An apparatus for lapping an edge surface of an object comprises a block having a side adapted to engage a wide surface of an object, adjustable spacers disposed on the block and adapted to engage a lap plate, and a weighted spring disposed on the block for urging the spacers and the object edge surface towards the lap plate. A method for lapping comprises setting surfaces of adjustable spacers disposed on a block to be substantially the same distance from the block, affixing a wide surface of an object to the block, urging an edge surface of the object and the spacers towards a lap plate, lapping the edge of the object, inspecting the edge for parallelism to a reference line, resetting the spacers and relapping the edge surface.

Abstract: A phase-locked semiconductor laser array having a plurality of lasing regions includes phase-shifting means on the emitting surface thereof through which laser light is emitted. The phase-shifting means provide a phase shift for those laser beams passing therethrough so that the phases of all the emitted laser beams are substantially the same. The phase-shifting means include a coating on the emitting surface which has a spatially varying thickness in the lateral direction.

Abstract: A device for converting DC to RF has a monolithic PIN diode adapted to be coupled to a DC supply. The diode receives light switching pulses and is coupled to a monolithic resonator. The monolithic form provides compactness and reliability, while the diode, which is reversed biased when OFF, prevents substrate leakage currents. The diode and the resonator can be made in a single substrate, e.g., silicon, or in different substrates, e.g., silicon for the diode to obtain a long carrier lifetime and, thus, minimize the light pulse repetition rate, and GaAs for the resonator to obtain a high Q. The resonator can also act as an impedance transformer.

Abstract: A method for fabricating adjacent electrically conducting and insulating regions in a silicon film is described. A substantially insulating layer of oxygenated, N or P doped, non-single crystalline silicon film is first formed. The film is then selectively laser irradiated so as to form an irradiated portion which is substantially conducting.

Abstract: A CCD storage register for storing an area array of picture elements in a solid-state imager comprises a first set of charge transfer channels arranged in a parallel array with intervening spaces. Respective ones of a second set of charge transfer channels are located in spaces adjacent to the second set of charge transfer channels. Charge transfer stages in adjacent charge transfer channels in said first and second sets of charge transfer channels have corresponding charge storage sites between which connections for charge transfer can be made selectively. This allows shift and add procedures to be carried forward in the CCD storage register. The shift and add capability allows time-delay-integration procedures and true line interlacing procedures, as examples, to be carried forward in the CCD storage register.

Abstract: An N-channel transistor formed in a layer of semiconductor material disposed on a insulating substrate is disclosed. The source region has a depth less than the thickness of the semiconductor layer so that a P-type region can be formed in the semiconductor layer between the source region and the insulating substrate. This P-type region has an impurity concentration sufficient to prevent the depletion region of the source from extending to the interface between the layer of semiconductor material and the substrate. The P-type region substantially prevents back-channel leakage currents from flowing between the source region and the drain region along the portion of the layer of semiconductor material immediately adjacent the insulating substrate when the device has been irradiated.