Abstract: A transport system is disclosed, including an air film shuttle conveyor for conveying semiconductor chips from a loading to an unloading station, the conveyor comprising a base plate and upstanding side guide walls extending longitudinally of the base plate, the guide walls being spaced apart a distance slightly greater than the lateral dimension of said chips; further included are means providing a laminar air flow which surrounds the chips and forms an air film supporting them and propelling them downstream such that the slight spacing between the chips and the guide walls causes the flow resistance to be higher in the one region defined by said slight spacing than in the region defined by the spacing between the chips, whereby a continuous and flexible separation action occurs between the chips.

Abstract: Controlling Al.sub.2 Cu precipitation in copper doped aluminum by evaporating the aluminum metallurgy containing 3 to 4% copper at about 210.degree. C. on SiO.sub.2 coated semiconductor devices. In multilevel metallurgy sintering can be optionally performed at 400.degree. C. for 75 minutes to cause intermetal diffusion at vias between the metallurgy levels.

Abstract: Production of a sintered ceramic dielectric formed from a green sheet having a uniform microporous structure providing uniform dielectric properties and compressibility for lamination of stacked green sheets into a unitary laminate which may be provided with an internal pattern of electrical conductors extending therein. The structure is obtained by blending the ceramic particulate in a solution of a binder resin miscible in a solvent mixture which is formed from a volatile solvent for the binder resin and a less volatile solvent in which the resin is at most only slightly soluble.

Abstract: Use of a dual composite mask for a lift-off multi-layered structure process in which a base component layer acts as an etch stop for reactive ion etching of overlying layers.

Abstract: A quadrupole sputtering system having four electrodes comprised of a cathode, an anode, a cathode/anode shield and an electrically floating target shield circumscribing the source target of the cathode.

Abstract: Disclosed is a process for reducing microcracks and microvoids in the formation of polycrystalline (polysilicon) structures from initial layers of amorphous silicon by annealing. In annealing of amorphous silicon to the polycrystalline form, the crystal grains are thickness limited; and thus by maintaining the thickness below 1000 angstroms, the spacing between contrasting material forming the crystal grains can be minimized on anneal. The resultant equiaxial grains are used as seed crystals for epi-like growth of silicon from them into the required or desired layer thickness.

Abstract: The use of a molybdenum diffusion barrier between a copper layer and a magnesium oxide dry etch mask to obtain and insure adhesion between the two.

Abstract: The oxygen content of Czochralski grown silicon rods is characterized by annealing portions of the rods at selected times and temperatures and measuring the resistivity shift which is then related to the oxygen content of that portion of the rod. The rod can be selected for use in unipolar or bipolar device manufacture prior to cutting the rod into wafers.

Abstract: The obtention of enhanced planarity and dimensional integrity of sintered glass-ceramic substrates containing multi-level distribution of conductor patterns (e.g. copper) by a two stage firing of the green sheets, first between the anneal and softening points of crystallizable glass particles, interrupting the firing, superimposing selected light weights on the substrates, and heating through the coalescing temperatures to the crystallization of the glass.

Abstract: Aluminum/copper alloy conductors are made by forming a patterned layer of copper on a layer of aluminum. The portion of the aluminum layer which is not protected by the copper layer is removed by reactive ion etching and the resulting structure is then heated to cause the copper to diffuse into, and alloy with the aluminum layer.

Abstract: Extraction of non-lead components (e.g. tin, indium, etc.) from solder joints with monocarboxylic acids of alkylated hydrophenanthrene nuclei to increase the lead content of the solder joints.

Abstract: The performance of ethylene glycol alkylether developers, for positive methacrylate-methacrylic acid copolymer and terpolymer resists, is controlled by adding an organic complexing agent, such as citric acid, or a combination of a transition metal salt and a complexing agent, such as ammonium citrate, to the developer. The additives provide a consistent development rate, so that the maximum difference between the dissolution rates of the exposed and unexposed portions of the resist layer can be maintained, regardless of the developer purity.

Abstract: Exposed patterns in phenol-formaldehyde Novolak resin/diazo ketone resist layers are developed in an oxygen plasma by treating the resist layers, prior to development, with a magnesium salt. This produces a negative pattern. Positive patterns are produced by combining the process with decarboxylation of the exposed areas followed by blanket exposure.

Abstract: A process for forming a layer of a metallurgy interconnection system on a substrate. The process involves forming a first electrically insulative layer of an organic polymerized resin material on the substrate, forming a second thin layer on the first layer which is resistant to dry etching conditions which are effective to etch the first layer, depositing a photoresist layer on the second layer, exposing the photoresist to form an inverse pattern of a desired metallurgy pattern and developing the photoresist, reactive ion etching the resultant exposed areas of the first and second layers, depositing a blanket continuous conductive metal layer over the hills and valleys of the pattern resulting from reactive ion etching, applying a planarizing photoresist layer, etching the photoresist to expose high spots of the metal layer, and etching the metal high spots to a depth sufficient to expose the surface of the second layer.

Abstract: Sintered glass-ceramic substrates containing multi-level, interconnected thick-film circuit patterns of highly conductive metals such as gold, silver or copper are provided which can be fired in air (for gold and silver) or in neutral atmospheres (for copper) at temperatures below the melting points of these metals. This has been made possible by the discovery that finely divided powders of certain glasses described herein sinter to essentially zero porosity at temperatures below 1000.degree. C. while simultaneously maturing to glass-ceramics of low dielectric constant, high flexural strength and low thermal expansivity.

Abstract: A method for forming thin film patterns in the fabrication of integrated circuits utilizing a lift-off mask in an inverse vertical relationship with the desired metal film. The method involves the preliminary blanket deposition of the metal in-point, followed by a coating of a patterned lift-off mask over which is blanket coated a dry-etch resistant material with subsequent removal of the lift-off mask, and dry etching of the exposed metal film. In one embodiment the dry-etch mask can comprise a diverse metal layer when a dry-etch ambient is employed which is passive to the diverse metal. In another embodiment, where dry etch ambients are employed which are corrosive to the diverse metal which is desired in the final structure, it can be covered with a blanket layer of any convenient dry-etch resistant material, such as magnesium oxide, prior to removal of the lift-off mask.

Abstract: Apparatus and a method for measuring trace amounts of oxygen in an atmosphere is described. An oxygen free nitrogen gas is used as the carrier gas and nitrogen, ultra high purity, with approximately 10 ppm (parts per million) water is used as the reagent gas of an ionization source is operated at atmospheric pressure. A small electric field of approximately 200 volts per centimeter is applied across the length of the ionization chamber up to a pinhole entrance to a quadrupole mass spectrometer. The voltage is biased to repel negative ions towards the quadrupole mass spectrometer. Measurement of the peak height of the m/e value of 52 in the mass spectrum are integrated over a period of time. The results of the integration are then compared to a calibration chart which indicates the amount of oxygen that is present in the atmosphere being measured.

Abstract: A system for detecting and identifying the composition of a material, such as semiconductor wafers and chips, subject to one or more stages of processing. The material is laser irradiated to induce molecular fluorescence with means to detect the decay rate of the fluorescence. The decay rate is then compared with a decay record of fluorescence of acceptable modifications of the material, inclusive of amalgamated contaminants or impurities (e.g. doped regions) to determine the state of the modification of the material.

Abstract: In a crucible or reactor for making multi-layered semiconductor devices by means of liquid-phase epitaxy, different supersaturated solutions are brought into contact with semiconductor substrates for short times. Transport of the solutions occurs by alternating acceleration. Either gravity alternates with centrifugal force, or a positive rotational acceleration alternates with a negative one. Chambers within the reactor are interconnected by channels so that the alternating forces acting upon the solutions cause these to flow in a preferred direction without mixing with each other.

Abstract: Repair of opens and shorts in semiconductor packages and chip metallurgy by initial conversion of shorts into opens by severing of lines about the shorts, followed by interconnection of conductor patch lines to the good circuit portions through an insulating layer.