Abstract: A charge electrode structure assembly wherein an electrode pattern is coated on a dielectric substrate over which it is coated by a sealing layer of an insulating solder glass adapted to fusion bond to a second superimposed dielectric substrate. The solder glass is formed from a composition comprised of by weight, 56% SiO.sub.2, 8% Al.sub.2 O.sub.3, 8% B.sub.2 O.sub.3, 6% BaO, 6% PbO, 6% Na.sub.2 O, 4% ZrO.sub.2, 3% Li.sub.2 O and 3% La.sub.2 O.sub.3.

Abstract: The formation of sintered glass-ceramic substrates containing multi-level, interconnected thick-film circuit patterns of copper-based conductors obtained by firing in a controlled ambient of hydrogen and H.sub.2 O at temperatures below the melting point of copper.

Abstract: A seal glass for unitizing an array of glass nozzles of an ink jet printer. The seal glasses are corrosion resistant to alkaline and acidic inks, and have low softening points, medium high expansivities and anneal points and are compatible with the nozzle glasses.

Abstract: This invention relates to an interferometric process, and particularly to a process for examining the planarity of surfaces.

Abstract: A method for fabricating an interconnection package for a plurality of semiconductor chips which include the fabrication of a multi-layered glass-ceramic superstructure with a multi-layered distribution of conductors on a preformed multi-layered glass-ceramic base, by the repeatable steps of depositing a conductor pattern on the base and forming thereon a crystallizable glass dielectric layer which is then crystallized to a glass-ceramic prior to further additions of conductor patterns and crystallizable glass layers to form a monolithic compatible substrate all through. Semiconductor chips can be electrically connected to expose conductor patterns at the top surface of the resultant glass-ceramic package.

Abstract: Described is a method for interferometric measurement in which a monochromatic, coherent and parallel, convergent or divergent radiation is directed onto the test object so as to generate in a manner of an interference fringe pattern, the distances between two adjacent fringes being correlated to .lambda./2 distances in the object space.The radiation reflected from the object and containing an interference field, giving rise to said fringe pattern, is redirected onto the test object, e.g. by a suitable mirror arrangement under an angle of incidence different from the angle of incidence of the radiation first impinging on the test object.This radiation, after reflexion from the test object, forms an interference field comprising four interfering components and producing, e.g. on an observation screen, an interference fringe field. By properly adjusting the angles of incidence of both radiations, the distances between adjacent fringes can be made to correspond to .lambda./4 distances in the object space.

Abstract: The coating of a conductor pattern on dielectric green sheets to a common edge thereof with stacking or superimpositioning together of a plurality of sheets to enclose the conductor pattern followed by sintering, with the edge side of the fired body having the exposed end terminations becoming the actual face of the body on which a semiconductor device is mounted in electrical circuit connection to respective ones of the common end terminations of the conductor runs. The conductor runs are returned through the body to the active face of the body to position the opposite or distal ends of the conductors thereat, in an increased spaced relationship of the distal conductor terminations. For external connection, terminal pins may be embedded in the fired body for connection at adjacent and to the distal conductor termination, with the pins projecting therefrom.

Abstract: A low barrier Schottky Barrier Diode (SBD) utilizing a metallurgical diffusion barrier between a transition metal barrier contact and an aluminum base land pattern to prevent interaction therebetween. The diffusion barrier comprises a discretely formed layer of an intermetallic of the transition metal and aluminum.

Abstract: Apparatus for placing a resist coated semiconductor wafer surface in the image plane of an optical system by means of three drivers (e.g. actuated flexure joints), with non-contact sensing (e.g. air gauges) at each driver providing individual feedback thereto to move the wafer into the image plane.

Abstract: The coating of a conductor pattern on dielectric green sheets to a common edge thereof with stacking or superimpositioning together of a plurality of sheets to enclose the conductor pattern followed by sintering, with the edge side of the fired body having the exposed end terminations becoming the actual face of the body on which a semiconductor device is mounted in electrical circuit connection to respective ones of the common end terminations of the conductor runs. The opposite or distal ends of the conductor runs may be fanned out to the opposite edge of side of the fired body in increased spaced relationship to each other.

Abstract: In an interferometric measuring system, a collimated monochromatic and coherent beam of light (1, I.sub.1 -I.sub.n)impinges on a grating 1 disposed parallel to the test surface 2. It has been found that in the above arrangement, a diffraction order (preferably the first diffraction order S.sub.1 -S.sub.4) of the light reflected from the face of the grating opposite to the test surface is always parallel to three diffraction orders of the radiation which after being first diffracted upon its first passage through the grating and reflected from the test surface is again diffracted upon its second passage through the grating. These four radiations (S.sub.1 to S.sub.4) generate two interference fields, the combination of which generates a beat pattern.According to the invention, the angle of incidence of the radiation impinging onto the face of the grating opposite to the test surface is chosen in such a way (preferably from 0.5.degree. to 5.degree.

Abstract: X-ray fluorescence produced by a primary X-ray beam incident at a very flat angle (below 1.degree.) onto the surface of a specimen contained in a vacuum chamber is used to analyze shallow layers and/or to determine depths of shallow surface layers, such as a very thin (typically between about 10A and 10.sup.3 A) silicon coating on Al or Cu layers which overlay a silicon substrate. Semiconductor profile determination may be another application of the invention.

Abstract: A green ceramic sheet material adaptable for accelerated sintering comprising a high alumina ceramic green sheet having an average particle size greater than one micron with a close particle size distribution and being formed into a solid integrated circuit interconnection substrate by heating the ceramic green sheet directly to its sintering temperature, absent the binder burn-off step.

Abstract: Use of a rare gas in combination with oxygen or nitrogen to sputter etch unreacted platinum after formation of a platinum silicide contact structure for the formation of a Schottky Barrier diode in a silicon semiconductor substrate.

Abstract: Magnesium oxide is deposited on a substrate as a mask with a pattern of openings which exposes a corresponding pattern of a surface of a substrate which is to be subjected to dry etching.In a specific application, the magnesium oxide mask is employed to delineate a conductor pattern on semiconductor substrates by dry etching.

Abstract: The lifetime of multiple capillary nozzle assemblies embedded in a glass mass, of a multiple nozzle ink-jet printer, can be increased and the thermal and mechanical compatibility of the resulting package enhanced by fabrication of the nozzles from glass compositions comprised of SiO.sub.2, ZrO.sub.2, Na.sub.2 O, K.sub.2 O and MgO. Inclusion of ZrO.sub.2 as well as minor amounts of BaO, MgO, CaO, and Al.sub.2 O.sub.3 enhances the alkali resistance of the glass nozzles. Also, the high SiO.sub.2 content of the glasses combined with the presence of ZrO.sub.2, MgO, CaO, and Al.sub.2 O.sub.3 imparts an acid resistance to the nozzles.

Abstract: Apparatus and processes are utilized to pierce holes in a brittle material by the use of laser induced shock waves. The waves are generated in an environment of compressed gas which confines the shock wave and carries the debris away. The material is moved into and/or through the work area in the y-direction either by a supporting web with associated rollers or sliding action. The laser beam scans in the x-direction and computer control is utilized to either deflect a continuous beam or switch a pulsed beam "on" where a hole is desired in the material.

Abstract: In the fabrication of integrated circuits, step or ridge peak problems in forming via openings through sputtered quartz coatings to underlying metallization are minimized by subdividing the contact portions thereof into a plurality of adjacent line segments, and forming the via opening between the elevations or peaks on the line segments to expose portions thereof for interconnection by higher metallization levels.

Abstract: Production of a sintered ceramic dielectric formed from a green sheet having a uniform microporous structure providing uniform dielectric properties and compressibility for lamination of stacked green sheets into a unitary laminate which may be provided with an internal pattern of electrical conductors extending therein. The structure is obtained by blending the ceramic particulate in a solution of a binder resin miscible in a solvent mixture which is formed from a volatile solvent for the binder resin and a less volatile solvent in which the resin is at most only slightly soluble.

Abstract: An electrical defect density monitor for semiconductor device fabrication utilizing a silicide of a formed transitional metal (such as platinum silicide) on a surface of a silicon substrate as a resistor in parallel with the resistance of the underlying substrate, including diffused regions, to improve measurement sensitivity of high sheet resistivity areas. The measurement can be employed for measuring the integrity of diffused regions and/or of dielectric coatings.