Abstract: A liquid fuel cell that includes a canister having a fuel reservoir and a burner assembly mounted upon the canister. The burner assembly contains a wick holding aperture that opens into the fuel reservoir and a wick that is made up of continuous fiber strands mounted in the tube. The wick is doubled over to create a crown that is vertically disposed above the top of the wick holding aperture and the two ends of the wick are arranged to pass down through the wick burner into the fuel reservoir. A number of fiber strands are severed in the crown region to create a small island of bristles which greatly enhances the wick's ability to be rapidly and efficiently ignited.

Abstract: Disclosed in this specification is a lead-free soldering alloy made of gold, tin and indium. The tin is present in a concentration of 17.5% to 20.5%, the indium is present in a concentration of 2.0% to 6.0% and the balance is gold and the alloy has a melting point between 290° C. and 340° C. and preferably between 300° C. and 340° C. The soldering alloy is particularly useful for hermetically sealing semiconductor devices since the melting temperature is sufficiently high to permit post-seal heating and sufficiently low to allow sealing of the semiconductor without causing damage.

Abstract: A firearm having reduced recoil including a front slide connected to a rear slide by way of a slide link. Firing the firearm causes the rear slide to recoil and transfer energy, by means of the slide link, to the front slide. The front slide moving in the direction opposite the rear slide thereby reducing the recoil of the firearm. After reaching full recoil, the front and rear slides return to their resting positions.

Abstract: An integrated low leakage diode suitable for operation in a power integrated circuit has a structure similar to a lateral power MOSFET, but with the current flowing through the diode in the opposite direction to a conventional power MOSFET. The anode is connected to the gate and the comparable MOSFET source region which has highly doped regions of both conductivity types connected to the channel region to thereby create a lateral bipolar transistor having its base in the channel region. A second lateral bipolar transistor is formed in the cathode region. As a result, substantially all of the diode current flows at the upper surface of the diode thereby minimizing the substrate leakage current. A deep highly doped region in contact with the layers forming the emitter and the base of the vertical parasitic bipolar transistor inhibits the ability of the vertical parasitic transistor to fully turn on.

Abstract: A mobile device comprising: an indicia reader for reading information bearing indicia; a communication module for sending and receiving radio communications; a display for displaying information; a processor for controlling software and firmware operation; a keypad for entering data to the processor; an illuminator for providing an operator with illumination under low ambient lighting conditions; and, a housing supporting the communication system, display, image processor and keypad configured to facilitate an operator holding the mobile device in one hand and keypad data entry with the other hand.

Abstract: A semiconductor package includes a semiconductor device 30 and a molded upper heat sink 10. The heat sink has an interior surface 16 that faces the semiconductor device and an exterior surface 15 that is at least partially exposed to the ambient environment of the packaged device. An annular planar base 11 surrounds a raised or protruding central region 12. That region is supported above the plane of the base 11 by four sloped walls 13.1-13.4. The walls slope at an acute angle with respect to the planar annular base and incline toward the center of the upper heat sink 10. Around the outer perimeter of the annular base 11 are four support arms 18.1-18.4. The support arms are disposed at an obtuse angle with respect to the interior surface 16 of the planar annular base 11.

Abstract: A semiconductor die package is disclosed. It includes a leadframe structure comprising a first die attach pad and a second die attach pad. A plurality of leads extend from the first and second die attach pads. The plurality of leads includes at least a first control lead and a second control lead. A first semiconductor die including a first device is mounted on the first die attach pad, and a second semiconductor die has a second device is mounted on the second die attach pad. A housing is provided in the semiconductor die package and protects the first and second dies. The housing may have an exterior surface and at least partially covers the first semiconductor die and the second semiconductor die. The first control lead and the second control lead are at opposite sides of the semiconductor die package.

Abstract: An apparatus for sanitizing the skin area beneath a worn medical cast includes a thin elongate and flexible member made from a highly pliable material, the member including a distal end having at least one cleaning pad secured thereon. The thin elongate member is sized to be fitted between the skin of a cast wearer and the inner surface of a worn cast. In one version, disposable cleaning pads are releasably secured to the distal end of the elongate member.

Abstract: An apparatus and a related method for performing particle agglutination reactions in at least one disposable probe tip are disclosed. The at least one probe tip includes a sample cavity for sample acquisition, at least one flanking cavity for the capture of particles by centrifugation or other means, a transition zone for the mixing of the sample with reagents for agglutination and a detection zone for the optical detection of particle agglutination. A mechanism may be attached to the probe tip for the controlled movement of fluids through the internal volume of the probe tip. The probe tip is particularly useful for the automation of high-throughput agglutination-type assays.

Abstract: A semiconductor device including: a low threshold PMOS device formed over an N-type region, the source and drain of the low threshold PMOS formed in P-regions surrounded by N-regions; a low threshold NMOS device formed in a P-type region, the source and drain of the low threshold NMOS formed in N-regions surrounded by P-regions; first and second substrate bias generators, each connected to one of the low threshold devices for generating a substrate bias; a voltage source for generating substrate bias during a standby mode to reduce leakage current; wherein a low voltage threshold is established by the source and drain regions of the low threshold devices and their respective surrounding regions of opposite polarity.

Abstract: A method of printing comprising the steps of: providing a print media having a printing surface; measuring at least one parameter of the print media; calculating an optimal configuration for a radio frequency identification (RFID) transponder circuit for obtaining a desired RFID transponder resonant frequency; configuring the RFID transponder circuit and printing the RFID transponder circuit onto the print media.

Abstract: Work piece processing is performed by pulsed discharges between an anode (2) and a magnetron sputtering cathode (1) in solid-gas plasmas using a chamber (2) containing the work piece (7). A system (12) maintains a vacuum in the chamber and another system (14) provides sputtering and reactive gases. The pulses are produced in a plasma pulser circuit including the anode and the cathode, the discharges creating gas and partially ionized solid plasma blobs (3) moving or spreading from a region at a surface of the cathode towards the work piece and the anode. A potential is applied to the work piece so that a pulsed current comprising biasing pulses arises between the second electrodes. In particular biasing discharges are produced between the anode and the work piece when said plasma blobs have spread to regions at the anode and at the work piece so that the pulsed current is the current of these biasing discharges.

Abstract: A cell phone includes: a device for wireless communication; an imager sensor for capturing an image of an object; a lens system for projecting an image of the object onto the imager; a battery for powering the cell phone; a lens system for focusing images of the object onto the imager comprising: a focus element; at least two electrodes associated with the focus element; a control system to adjust the state of focus of the focus element by controlling the at least two electrodes.

Abstract: A portable data terminal including a processor, a plurality of system resources, data storage means configured to store a plurality of program instructions, the program instructions including at least one hardware device driver and at least one scan driver, an image engine including a host interface, an imager in communication with the host interface, an illumination assembly and an aimer assembly wherein the illumination and aimer assemblies are controlled by the processor according to instructions stored in the data storage means, and a data structure having at least one data type and at least one value, the data structure being defined by the scan driver wherein the scan driver is configured to modify the data structure and transfer at least one of the values of the data structure to the hardware device driver in order to manage acquisition and release of a system resource by the image engine.

Abstract: A sieve bed including an inlet end, an outlet end, a retainer disposed toward the inlet end and including an interior portion, an exterior portion, a plurality of openings disposed toward the exterior portion, and a passage disposed toward the interior portion, an inlet cap and an inlet port configured to receive a feed stream, wherein the inlet cap includes at least a portion spaced from the retainer thereby defining an inlet chamber in fluid communication with the inlet port and the plurality of openings, an outlet lid disposed toward the outlet end, an exterior wall extending from the inlet cap to the outlet lid, an intermediate wall spaced from the exterior wall and extending from the retainer toward and terminating short of the outlet lid and an interior wall spaced from the intermediate wall and extending from the retainer proximate the passage to at least the outlet lid.

Abstract: An ophthalmic solution comprising a polyethoxylated glyceride in the range of 0.001 to about 10 percent by weight and a buffer agent. These solutions impart surprising comfort and wearability to contact lenses. At the same time the solutions provide good preservative capacity and do not increase protein deposit.

Abstract: A method for converting digital images of an actuated breast into an accurate description of breast surface motion from a digital image-based elasto-tomography system comprises the steps of artificially placing a high density of fiducial markers on the breast surface, whereby the fiducial markers have different qualities and are placed in different proportions according to their quality; utilizing motion invariant properties of the fiducial markers to form a global motion invariant signature; tracking the markers on the actuated breast surface from image to image in each digital camera using the global motion invariant signature; and using the cameras calibration to measure the breast surface motion.

Abstract: Provided are a semiconductor device including a source/drain and a gate formed using a doped polysilicon process, and a method of fabricating the semiconductor device. The method comprises: forming a gate insulating layer on a part of an active region on a first conductivity type epitaxial layer; forming a conductive layer on the epitaxial layer; implanting high concentration impurities of a second conductivity type a first portion of the conductive layer on the gate insulating layer and second portions of the conductive layer on both sides of the first insulating layer; patterning the conductive layer; forming a second insulating layer on the epitaxial layer and high concentration impurity regions of the second conductivity type below the second conductive pattern; and implanting low-concentration impurities of the second conductivity type into the epitaxial layer between a gate structure and the high concentration impurity regions.