Abstract: A spatial light modulator is disclosed, along with a method for making such a modulator that comprises an array of micromirror devices. The center-to-center distance and the gap between adjacent micromirror devices are determined corresponding to the light source being used so as to optimize optical efficiency and performance quality. The micromirror device comprises a hinge support formed on a substrate and a hinge that is held by the hinge support. A mirror plate is connected to the hinge via a contact, and the distance between the mirror plate and the hinge is determined according to desired maximum rotation angle of the mirror plate, the optimum gap and pitch between the adjacent micromirrors. In a method of fabricating such spatial light modulator, one sacrificial layer is deposited on a substrate followed by forming the mirror plates, and another sacrificial layer is deposited on the mirror plates followed by forming the hinge supports.

Abstract: The present invention provides a method for manufacturing a semiconductor device. In one embodiment of the present invention, without limitation, the method for manufacturing the semiconductor device includes forming a gate structure (120) over a substrate (110) and forming source/drain regions (190) in the substrate (110) proximate the gate structure (120). The method further includes forming fluorine containing regions (220) in the source/drain regions (190) employing a fluorine containing plasma using a power level of less than about 75 Watts, forming a metal layer (310) over the substrate (110) and fluorine containing regions (220), and reacting the metal layer (310) with the fluorine containing regions (220) to form metal silicide regions (410) in the source/drain regions (190).

Abstract: A method of forming a film stack in an integrated circuit, said method comprising depositing a layer of silicon carbide adjacent a first layer of dielectric material, depositing a layer of silicon nitride adjacent the layer of silicon carbide, and depositing a second layer of dielectric material adjacent the layer of silicon nitride.

Abstract: A sigma-delta modulator includes a discrete time circuit that receives a digital feedback signal and an input signal, where the input signal includes information and one or more analog input currents. The discrete time circuit converts the digital feedback signal into an analog feedback signal during a first discrete time and sums the analog feedback signal and the one or more analog input currents during a second discrete time to yield one or more summed signals. A continuous time circuit includes passive elements, is coupled to the discrete time circuit, and operates to filter the one or more summed signals using a first-order filter and a second-order filter in order to generate one or more filtered signals. A quantizer is coupled to the continuous time circuit and generates the digital signal using the one or more filtered signals, where the digital signal comprising the information.

Abstract: According to an aspect of present invention, modules designed to operate with different frequency in functional (normal) mode are tested using a sequential scan based technique at the respective frequencies. In one embodiment the interface logic connecting the two modules is tested for at-speed performance (i.e., the same speed at which the interface would be operated in functional mode during normal operation).

Abstract: The invention provides a method for quantifying over-etch of a conductive feature. In one embodiment, this method includes forming a conductive feature over a substrate, the conductive feature having a sheet resistance test structure associated therewith, the sheet resistance test structure having a first sheet resistance value. This method may further include etching the conductive feature and the sheet resistance test structure using a common etch process, obtaining a second sheet resistance value of the sheet resistance test structure after the etching, and quantifying an amount of over-etch into the conductive feature using the first and second sheet resistance values.

Abstract: Methods and apparatus are provided for preventing charge accumulation in microelectromechanical systems, especially in micromirror array devices having a plurality of micromirrors. Voltages are applied to the micromirrors for actuating the micromirrors. Polarities of the voltage differences between mirror plates and electrodes are inverted so as to prevent charge accumulation.

Abstract: The present invention provides a method for analyzing critical defects in analog integrated circuits. The method for analyzing critical defects, among other possible steps, may include fault testing a power field effect transistor (120) portion of an analog integrated circuit (115) to obtain electrical failure data. The method may further include performing an in-line optical inspection of the analog integrated circuit (115) to obtain physical defect data, and correlating the electrical failure data and physical defect data to analyze critical defects.

Abstract: The present invention provides method of manufacturing a metal-insulator-metal capacitor (100). A method of manufacturing includes depositing a first refractory metal layer (105) over a semiconductor substrate (110). The first refractory metal layer (105) over a capacitor region (200) of the semiconductor substrate (110) is removed and a second refractory metal (300) is deposited over the capacitor region (200). Other aspects of the present invention include a metal-insulator-metal capacitor (900) and a method of manufacturing an integrated circuit (1000).

Abstract: The present invention provides a photoresist removal process and a method for manufacturing an interconnect using the same. One embodiment of the photoresist removal process includes, among other steps, providing a low dielectric constant (k) substrate having a photoresist layer located thereover, and removing the photoresist layer using a plasma which incorporates a gas which includes hydrogen or deuterium and a small amount of oxygen less than about 20 volume percent of the gas. Another embodiment of the photoresist removal process includes, among other steps, providing a low dielectric constant (k) substrate having a photoresist layer located thereover, removing a bulk portion of the photoresist layer using a plasma which incorporates a gas which includes hydrogen or deuterium, and removing a small portion of the photoresist layer using a plasma which incorporates a gas which includes oxygen, wherein the order of the two removing steps is interchangeable.

Abstract: According to one embodiment of the invention, a chemical mechanical polishing monitoring system includes a pump delivering a slurry to a polishing pad and a rotation sensing device coupled to the pump. The rotation sensing device senses a rotation of the pump and generates a signal indicative of the rotation of the pump.

Abstract: A spatial light modulator comprises an array of micromirror devices each of which has a reflective and deflectable mirror plates. The mirror plates are moved between an ON and OFF state during operation, wherein the OFF state is a state wherein the mirror plate is not parallel to the substrate on which the mirror plate is formed. The micromirror device may have an ON state stopper for limiting the rotation of the mirror plate at the ON state angle, but does not have an OFF state stopper. The non-zero OFF state is achieved by attaching the mirror plate to a deformable hinge held by a hinge support that is curved at the natural resting state.

Abstract: Phosphonate surfactants are employed to passivate the surfaces of MEMS devices, such as digital micromirror devices. The surfactants are adsorbed from vapor or solution to form self-assembled monolayers at the device surface. The higher binding energy of the phosphonate end groups (as compared to carboxylate surfactants) improves the thermal stability of the resulting layer.

Abstract: An optical projection and capture system includes an image sensor integrated with an optical projection device. Additionally, the integrated device may be coupled with a laser pointer to deliver interactive presentations. The laser pointer may be pulsed to improve identifying and tracking a laser light spot on a projected image. These applications may be extended to rear projection systems for gaming and interactive graphics.

Abstract: In accordance with a particular embodiment of the present invention, a method for manufacturing strained silicon is provided. In one embodiment, the method for manufacturing strained silicon includes inducing a curvature in a silicon wafer, depositing an epitaxial layer of silicon upon an upper surface of the silicon water while the silicon wafer is under the induced curvature, and releasing the silicon wafer from the induced curvature, after depositing the epitaxial layer, such that a strain is induced in the epitaxial layer.

Abstract: A micromirror array 110 fabricated on a semiconductor substrate 11. The array 110 is comprised of four operating layers 12, 13, 14, 15. An addressing layer 12 is fabricated on the substrate. A raised electrode layer 13 is spaced above the addressing layer by an air gap. A hinge layer 14 is spaced above the raised electrode layer 13 by another air gap. A mirror layer 15 is spaced over the hinge layer 14 by a third air gap.

Abstract: A microstructure is packaged with a device substrate of the microstructure being attached to a package substrate. For dissipating possible deformation of the microstructure, which may result in device failure or quality degradation of the microstructure, an adhesive material comprising a compliant adhesive component is applied and positioned between the device substrate and package substrate.

Abstract: The micromirror-based projection system of the present invention uses polarized illumination light in producing desired images on a display target. The display target has coated thereon a polarization film that absorbs most of the ambient light that would be incident onto the display target otherwise. Polarized illumination light is provided incident to the reflective surfaces of the spatial light modulator. The polarization direction of the illumination light can be associated with the rotation axes of the micromirrors and the polarization direction of the polarized film on the display target.

Abstract: The invention provides a method for manufacturing a microelectronic device and a microelectronic device. The method for manufacturing the microelectronic device, without limitation, may include forming a first mirror layer over and within one or more openings in a sacrificial spacer layer, and forming a dielectric layer over an upper surface of the first mirror layer and within the one or more openings. The method may further include subjecting the dielectric layer to an etch, the etch removing the dielectric layer from the upper surface and leaving dielectric portions along sidewalls of the one or more openings, and forming a second mirror layer over the first mirror layer and within the one or more openings, the dielectric portions separating the first mirror layer and the second mirror layer along the sidewalls.

Abstract: A projection system, a spatial light modulator, and a method for forming a micromirror array such as for a projection display are disclosed. The spatial light modulator can have two substrates bonded together with one of the substrates comprising a micro-mirror array. The two substrates can be bonded at the wafer level after depositing a getter material and/or solid or liquid lubricant on one or both of the wafers if desired. In one embodiment of the invention, one of the substrates is a light transmissive substrate and a light absorbing layer is provided on the light transmissive substrate to selectively block light from passing through the substrate. The light absorbing layer can form a pattern, such as a frame around an array of micro-mirrors.