Abstract: A technique is described for doping a silicon body with boron. The surface to be doped is typically a trench sidewall, to be used as a storage capacitor or for isolation. By providing a silicon dioxide diffusion control layer, and a polysilicon source layer that incorporates the boron, well-controlled boron doping over a wide concentration range can be obtained. Control of the doping transfer can be obtained by the choice of ambients, either dry or steam. Furthermore, removal of the silicon dioxide and polysilicon layers following the doping process is facilitated due to the etch selectivity possible between SiO.sub.2 and Si. If desired, the layers may remain on the silicon body.

Abstract: Apparatus (11), which includes two adjacent wafer treating facilities (21 and 22), features an overhead positioning mechanism (20), the operation of which is controlled by a control module (48) to handle articles, such as semiconductor wafers (16), in a plurality of sequential plating operations. The vertical movement of a manipulator extension (46) is controlled with a relatively greater degree of precision to protect the wafers from becoming damaged. In the horizontal direction, a traveling frame (106) steadies a lead screw (59) spanning an extended distance between the two facilities (21 and 22) to support a precise movement of the manipulator extension (46) with respect to both of the facilities.

Abstract: A static random access memory arrangement provides for accessing a desired number of bits (i.e., a byte) simultaneously by placing the accessed columns adjacent one another. For example, if the memory provides 8 bits when accessed, then a group of 8 adjacent columns is addressed, whereas the prior art provided for accessing one column out of each of 8 separate groups. The present scheme provides for improved utilization of spare columns for redundancy purposes, and also allows for partial row selection for reduced power consumption and noise.

Abstract: A laser or other source of radiant electromagnetic energy removes optically transparent material (e.g., LiNbO.sub.3) to form various structures. To enhance coupling the radiant energy to the optical material, a layer of an ablative absorber (e.g., a metal or organic material) can be used. Alternately, the radiant source can be initially operated above a threshold that causes removal of a surface layer of the optical material. After selectively thus removing a surface layer of the optical material, subsequent sub-threshold applications of radiant energy remove additional optical material due to a change in the underlying material, rendering it more absorptive at the wavelength of the electromagnetic energy. Optical devices, including waveguides, can be formed, as well as isolation grooves, alignment structures, etc.

Abstract: A spare decoder provides for the substitution of a spare component for repair of a defective semiconductor chip. For example, a spare row or column of memory cells can be substituted for a defective row or column of a memory chip by fusing fusible links in the decoder. The present invention implements the decoder in CMOS technology. To minimize power consumption, means are included for preventing current flow in an unused spare without having to fuse a link.

Abstract: A fluid (12), such as dichlorosilane, is stored in a pressure vessel (17) located at a site remote from a processing facility within the confines of a building (14). At such remote site the pressure vessel (17) is subject to climatic temperature variations over a range at the lower temperatures of which a vapor pressure of the fluid may be insufficient to generate a pressure within the pressure vessel to drive the fluid through a duct (36) toward the processing facility. A supply of an inert gas (34) is applied at a first predetermined pressure to the pressure vessel (17) to urge the fluid under such predetermined pressure through the duct (36) toward an evaporator vessel (38) located at the processing facility. The evaporator vessel (38) is maintained at a first predetermined elevated temperature at which the fluid at such first predetermined pressure is in a gaseous state.

Abstract: An integrated circuit comprises a node that is boosted by one or more boost capacitors depending on the level of the power supply voltage. When the level is below a given threshold, a first booster capacitor is activated. Additional boost capacitors may be provided for activation at still lower thresholds. The boost capacitors are deactivated when the power supply level exceeds the corresponding thresholds. In this manner, a more constant boosted voltage is obtained. This provides for an adequate boosted voltage at low power supply levels, while avoiding excessive boost at high power supply voltages that could damage devices. The technique may be used for boosted row conductors in dynamic random access memories, among other applications.

Abstract: A memory having multiplexed address inputs uses a column decoder which is deactivated during row address time and becomes activated during column address time. Access time and power dissipation are reduced since the column decoder need not be fully recovered after row address information has terminated and column address information is available.

Abstract: Compressive strain in cabled optical fibers can cause buckling of the fibers and resulting microbending loss. To measure the longitudinal compression in cabled optical fibers, a modulated laser beam is directed through a first fiber and looped back to the origin by a second fiber. Next, the cable is stretched until tensile strain is indicated by a change in phase of the modulated signal. The amount of stretching required indicates the degree of compression on the fibers in the unstretched cable, and hence the amount of excess length of fiber in the cable. To measure excess fiber in relatively long lengths of cable, a portion of the cable can remain reeled, and the strain applied to the unreeled portion. A correction factor can be determined for slippage between the fiber and sheath in the reeled portion.

Abstract: A lithographic mask is corrected by ion beam removal of material at the location of a defect after the mask is initially formed. In the case of defects due to excess material (opaque defects), the ion beam removes the excess opaque material. In the case of pinholes (clear defects), the substrate (typically glass) is rendered opaque. The ion beam may be used for imaging the defect, typically by detection of secondary electrons or photons emitted where the ion beam impinges on the mask. Optical masks (visible, ultraviolet) and X-ray masks, among others, can be corrected.

Abstract: Optical fibers are spliced by a technique that yields very low loss and accommodates fibers having different outer diameters or having nonconcentric cores. The technique is especially useful for single mode optical fibers, and splice losses of less than 0.1 db in a wavelength range of about 1.3 to 1.55 micrometers is typically obtained. The splice comprises a slotted tube surrounding abutted fiber ends, with the tube being at least partially filled with cement. An outer cylindrical sleeve is optionally provided for increased strength. In splicing the fibers, the fibers are aligned by means of a scattered light detector comprising a slotted tube surrounding a portion of the fiber, and a detector at one end of the tube. A sensitive null indication is obtained which provides for precise alignment of the fiber cores.

Abstract: Cylindrical optical fiber connector plugs are joined using a split sleeve to align the axes of the plugs. The inventive sleeve exerts a substantially uniform pressure around the circumference of the plugs for improved alignment of the fibers therein. In one embodiment, the uniform pressure is achieved by varying the thickness of the sleeve around its circumference. Low-cost molded sleeves of the inventive design have achieved lower-loss connections than a machined metal sleeve.

Abstract: A memory of rows and columns of memory cells uses a multiplexed input address buffer having output row-column address lines which are coupled to a multiplexer and to column decoders. The multiplexer is coupled to row address decoders and serves to selectively couple the address lines to the row decoders. The address lines typically first carry row address information and then column address information. The use of a common portion of the address lines to couple the address buffer to the column decoders and multiplexer tends to reduce the overall size of the memory and thereby increases yield and reduces cost.

Abstract: Articles made by the reaction injection molding process obtain a reduced residence time in the mold, hence increasing the production rate, by choosing processing and material parameters according to the inventive method. This method makes use of material parameters and processing conditions, including temperature and cavity shape for determining the viscosity of prepolymer material as it solidifies in the cavity. This information is used to optimize fluid injection rates, temperature of the fluid or cavity wall, choice of reactive fluid, or shape of the cavity. Articles having more complex geometries than previously obtained can be produced when the cavity filling is mathematically simulated according to the present procedure, typically by means of a computer. This can ensure against blockage of critical passages in the cavity, polymer degradation, etc.

Abstract: A method of producing charged Teflon material having a stable internal positive charge is shown. Partially penetrating positive ions, which may be produced, for example, by a corona discharge or ion beam, are applied to Teflon at an elevated temperature, typically in excess of 100 degrees Celsius for high stability. It has been found that stable internal positive charges may be obtained thereby, having a stability at room temperature in excess of 2,000 years in some cases. This is comparable to the charge stability of negatively internally charged Teflon articles. Regions of both positive and negative internal charges may be included in the same article. Various charged Teflon devices may be made, including microphones, loudspeakers, electrostatic air filters, etc. Intermediate levels of charge stability, less than the maximum obtainable, may also be produced.

Abstract: Electrically polarizable material (e.g., PVDF film) is poled by applying an electric field across the film. In the inventive technique, insulation is provided on the surface of the film. In a typical embodiment, a compliant dielectric annulus insulates the polarized region from the edges of the film. This substantially eliminates breakdown at the edges of the film, allowing increased poling voltages. The technique can reduce poling time to typically a few seconds at room temperature, as compared to minutes or hours by prior art techniques, some of which required elevated temperatures.

Abstract: A tunable high-pass or low-pass filter employs a balanced amplifier having electronically controlled elements in either the two input or the two feedback paths (or both). A reactive element is placed in the other of the paths. Especially low distortion results from this arrangement, allowing convenient integrated circuit implementation with a nonlinear device (e.g., MOS transistor) as a voltage-controllable element. Multiple stages can be cascaded and controlled from a reference clock or other precision source for high accuracy.

Abstract: A varnish suitable for spray coating on plastic insulated copper conductors restores cracked or damaged insulation. The varnish cures by reaction in air upon application to the conductors. The varnish comprises drying oil (typically, tung oil and castor oil), phenolic resin, metallic catalysts, and solvents.

Abstract: Solid state devices are produced by dry etching of a resist film to produce a negative resist pattern. The film comprises a polymer typically containing a halogen, and at least one type of silicon-containing or nonsilicon-containing organometallic monomer. The radiation, typically X-ray radiation, locks the monomer or monomers into the polymer, with a subsequent fixing step removing the unlocked monomer or monomers in the unirradiated portion of the resist. The film is then exposed to a plasma comprising oxygen, which removes the unirradiated portion at a faster rate than the radiated portion, producing a negative resist pattern. The plasma development is typically accomplished by reactive ion etching. Sensitizers can be used to extend the wavelength response of the films, typically into the ultraviolet or visible regions.

Abstract: A static noninverting driver circuit is used with a standard static address-row-decoder circuit in order to provide capacitance load drive capability and relatively high-speed operation. The driver circuit uses n-channel enhancement and depletion mode field effect transistors and a feedback bootstrap capacitor to achieve low power-high speed operation with a full VDD output high level.