Abstract: In a making a semiconductor device, a patterning stack above a conductive material that is to be etched has a patterned photoresist layer that is used to pattern an underlying a tetraethyl-ortho-silicate (TEOS) layer. The TEOS layer is deposited at a lower temperature than is conventional. The low temperature TEOS layer is over an organic anti-reflective coating (ARC) that is over the conductive layer. The low temperature TEOS layer provides adhesion between the organic ARC and the photoresist, has low defectivity, operates as a hard mask, and serves as a phase shift layer that helps, in combination with the organic ARC, to reduce undesired reflection.

Abstract: An integrated circuit has a group of cores that communicate with a packet switch using carrierless ultra wideband (UWB) radio frequency (RF) signaling. The packet switch communicates outside the integrated circuit using optical signaling. The carrierless UWB provides for high frequency communication and processing without requiring additional space for interconnects. No special paths are necessary because the signals used by the cores for communicating with the packet switch are RF signals therefore they can be broadcast by the packet switch and be received by a plurality of cores. No conductor line or waveguide is required. Because the signals are carrierless, they can be transmitted with low power. With multiple cores providing information to the switch, the total information being received may exceed the capacity of the RF bandwidth so an external optical interface is provided to multiplex information provided via carrierless UWB RF signals by a plurality of cores.

Abstract: In a D.C. to D.C. converter, an input voltage is received via an inductor at an input terminal and stored onto a capacitor of an integrator. A first switch is coupled between the input terminal and a reference terminal such as ground and thereby fluxes the inductor. The input voltage stored on the capacitor falls at a rate determined by the integrator circuit and an initial value of the input voltage. After a time duration, the first switch becomes nonconductive. Current flows from the inductor through a diode to an output terminal until a second switch across the diode is made conductive. Stored voltage on the capacitor of the integrator increases in response to the second switch being conductive. The stored voltage on the capacitor is continuously compared with a reference voltage. The second switch is made nonconductive when the stored voltage on the capacitor exceeds the reference voltage.

Abstract: A device for providing a constant output voltage based on a variable input voltage is provided. The device may include: (1) a charge-pump comprising a plurality of cells, wherein each of the plurality of cells can be configured as an input cell, a stepping cell, or a load cell; (2) a comparator; and (3) a differentiator coupled to the comparator output, wherein the differentiator is configured to monitor the comparator output and produce a reset pulse each time the comparator output changes its state. The device may further include: (1) a decimator; (2) an up/down counter; and (3) a controller for detecting whether the device is operating in a first predetermined mode or a second predetermined mode, wherein the two modes relate to the configuration of the plurality of cells into the input cell, the stepping cell, and/or the load cell.

Abstract: A memory includes an SRAM bitcell including a pair of cross-coupled inverters, wherein a first inverter of the pair includes a first device having a body and a second inverter of the pair includes a second device having a body. A first selection circuit has a first input coupled to a first supply voltage terminal, a second input coupled to a second supply voltage terminal, and an output coupled to a first current electrode of the first device and to a first current electrode of the second device. A second selection circuit has a first input coupled to the first supply voltage terminal, a second input coupled to the second supply voltage terminal, and an output coupled to the body of each of the first and second devices. A word line coupled to the SRAM bitcell is driven by a word line driver coupled to the first supply voltage terminal.

Abstract: A method for refreshing a Dynamic Random Access Memory (DRAM) includes performing a refresh on at least a portion of the DRAM at a first refresh rate, and performing a refresh on a second portion of the DRAM at a second refresh rate. The second portion includes one or more rows of the DRAM which do not meet a data retention criteria at the first refresh rate, and the second refresh rate is greater than the first refresh rate.

Abstract: A tool for forming a desired pattern on a polishing pad establishes a vibration that is coupled to the polishing pad. The vibration removes small portions of the polishing pad according to the desired pattern. The polishing pad is then used in a chemical mechanical polishing (CMP) step to polish a layer on a semiconductor device.

Abstract: A method of making a semiconductor device on a semiconductor layer is provided. The method includes: forming a select gate dielectric layer over the semiconductor layer; forming a select gate layer over the select gate dielectric layer; and forming a sidewall of the select gate layer by removing at least a portion of the select gate layer. The method further includes growing a sacrificial layer on at least a portion of the sidewall of the select gate layer and under at least a portion of the select gate layer and removing the sacrificial layer to expose a surface of the at least portion of the sidewall of the select gate layer and a surface of the semiconductor layer under the select gate layer. The method further includes forming a control gate dielectric layer, a charge storage layer, and a control gate layer.

Abstract: A circuit includes a first resistive element coupled to a diode, a second resistive element, a first transistor having a first current electrode coupled the second resistive element, a second transistor having a first current electrode coupled to the first resistive element and a second current electrode coupled to the control electrode of the first transistor, a third resistive element coupled to a node, a third transistor having a first current electrode coupled to the node and having a control electrode and a second current electrode each coupled to the control electrode of the second transistor, a fourth transistor having a first current electrode coupled to the second resistive element and a control electrode coupled to the control electrode of the second transistor, and a fifth transistor having a first current electrode coupled to the node and a control electrode coupled to the second current electrode of the fourth transistor.

Abstract: A semiconductor device and method of making comprises providing an active device region and an isolation region, the isolation region forming a boundary with the active device region. A patterned gate material overlies the active device region between first and second portions of the boundary. The patterned gate material defines a channel within the active device region, the gate material having a gate length dimension perpendicular to a centerline along a principal dimension of the gate material which is larger proximate the first and second portions of the boundary than in-between the first and second portions of the boundary. The channel includes a first end proximate the first portion of the boundary and a second end proximate the second portion of the boundary, further being characterized by gate length dimension tapering on both ends of the channel.

Abstract: A circuit comprises a first amplifier portion and a second amplifier portion. The first amplifier portion includes first and second transistors coupled together in a common-base configuration. A current mirror is coupled to the first and second transistors. A first filter is coupled between a first input and the first and second transistors. The second amplifier portion includes third and fourth transistors coupled together in a common-base configuration. First and second current sources are coupled to the third and fourth transistors. A second filter is coupled between a second input and the control electrodes of the third and fourth transistors, wherein the first and second filters are coupled together.

Abstract: A method of forming a gate dielectric layer includes forming a first dielectric layer over a semiconductor substrate using a first plasma, performing a first in-situ plasma nitridation of the first dielectric layer to form a first nitrided dielectric layer, forming a second dielectric layer over the first dielectric layer using a second plasma, performing a second in-situ plasma nitridation of the second dielectric layer to form a second nitrided dielectric layer; and annealing the first nitrided dielectric layer and the second nitrided dielectric layer, wherein the gate dielectric layer comprises the first nitrided dielectric layer and the second nitrided dielectric layer. In other embodiments, the steps of forming a dielectric layer using a plasma and performing an in-situ plasma nitridation are repeated so that more than two nitrided dielectric layers are formed and used as the gate dielectric layer.

Abstract: A method for forming a through substrate via (TSV) comprises forming an opening within a substrate. An adhesion layer of titanium is formed within the via opening, a nucleation layer of titanium nitride is formed over the adhesion layer, and a tungsten layer is deposited over the nucleation layer, the tungsten layer having a thickness less than or equal to a critical film thickness sufficient to provide for film integrity and adhesion stability. A stress relief layer of titanium nitride is formed over the tungsten layer and a subsequent tungsten layer is deposited over the stress relief layer. The subsequent tungsten layer has a thickness less than or equal to the critical film thickness. The method further includes planarizing to expose the interlevel dielectric layer and a top of the TSV and backgrinding a bottom surface of the substrate sufficient to expose a bottom portion of the TSV.

Abstract: A method of making a semiconductor device on a semiconductor layer includes: forming a gate dielectric over the semiconductor layer; forming a layer of gate material over the gate dielectric; etching the layer of gate material to form a select gate; forming a storage layer that extends over the select gate and over a portion of the semiconductor layer; depositing an amorphous silicon layer over the storage layer; etching the amorphous silicon layer to form a control gate; and annealing the semiconductor device to crystallize the amorphous silicon layer.

Abstract: Testing a non volatile memory by exposing the non volatile memory to particle radiation (e.g. xenon ions) to emulate memory cell damage due to data state changing events of a non volatile memory cell. After the exposing, the memory cells are subjected to tests and the results of the tests are used to develop reliability indications of the non volatile memory. Integrated circuits with non volatile memories of the same design are provided. Reliability representations of the integrated circuits can be made with respect to a number of data state charging events based on the exposure and subsequent tests.

Abstract: A dual data rate (DDR) memory controller and method are provided. The method includes: receiving a first data strobe at a first terminal from a first memory having a first rank; receiving a first data signal at a second terminal from the first memory having the first rank; calibrating the first data signal with the first data strobe to produce a first calibration value; receiving a second data strobe at the first terminal from a second memory having a second rank; receiving a second data signal at the second terminal from the second memory having the second rank; calibrating the second data signal with the second data strobe to produce a second calibration value; determining a final calibration value using the first and second calibration values; and using the final calibration value to time the first data signal and the second data signal during a read operation of the memories.

Abstract: A charge pump charges a first capacitor to a predetermined input voltage using a first switch. The first switch is coupled to a first terminal of the first capacitor for coupling the first terminal to an input terminal that receives the predetermined input voltage. A second switch couples a second terminal of the first capacitor to a reference voltage terminal. Charge is sequentially transferred from the first capacitor to an output capacitance by using the first switch. A portion of charge is sequentially removed from the output capacitance to the input terminal using a third switch and a second capacitor. Configuration logic provides control signals to make one or more of a plurality of charge transfer capacitors switch the same as said first capacitor switches.

Abstract: A system has a first plurality of cores in a first coherency group. Each core transfers data in packets. The cores are directly coupled serially to form a serial path. The data packets are transferred along the serial path. The serial path is coupled at one end to a packet switch. The packet switch is coupled to a memory. The first plurality of cores and the packet switch are on an integrated circuit. The memory may or may not be on the integrated circuit. In another aspect a second plurality of cores in a second coherency group is coupled to the packet switch. The cores of the first and second pluralities may be reconfigured to form or become part of coherency groups different from the first and second coherency groups.

Abstract: A transistor structure is formed by providing a semiconductor substrate and providing a gate above the semiconductor substrate. The gate is separated from the semiconductor substrate by a gate insulating layer. A source and a drain are provided adjacent the gate to define a transistor channel underlying the gate and separated from the gate by the gate insulating layer. A barrier layer is formed by applying nitrogen or carbon on opposing outer vertical sides of the transistor channel between the transistor channel and each of the source and the drain. In each of the nitrogen and the carbon embodiments, the vertical channel barrier retards diffusion of the source/drain dopant species into the transistor channel. There are methods for forming the transistor structure.

Abstract: A semiconductor substrate having a silicon layer is provided. In one embodiment, the substrate is a silicon-on-insulator (SOI) substrate having an oxide layer underlying the silicon layer. An amorphous or polycrystalline silicon germanium layer is formed overlying the silicon layer. Alternatively, germanium is implanted into a top portion of the silicon layer to form an amorphous silicon germanium layer. The silicon germanium layer is then oxidized to convert the silicon germanium layer into a silicon dioxide layer and to convert at least a portion of the silicon layer into germanium-rich silicon. The silicon dioxide layer is then removed prior to forming transistors using the germanium-rich silicon. In one embodiment, the germanium-rich silicon is selectively formed using a patterned masking layer over the silicon layer and under the silicon germanium layer. Alternatively, isolation regions may be used to define local regions of the substrate in which the germanium-rich silicon is formed.