Abstract: A power-on reset (POR) circuit that delays de-assertion a POR control signal in an IC device such that, when unstable power levels are detected, the POR control signal is maintained in an asserted condition until the IC device is fully reset. During a start-up phase of the IC device operation, the POR control circuit maintains the POR control signal in the asserted condition for a delay period whose length is determined, in part, by the amount of noise in the applied power. After the internal voltage of the IC device achieves a steady state for a suitable period of time, the POR control circuit de-asserts the POR control signal, thereby initiating configuration of the IC device. Subsequently, if a low power condition is detected, the POR control circuit asserts the POR control signal, and maintains the POR control signal in the asserted condition for a pre-defined delay period after the low-power event is detected, thereby allowing the IC device to fully reset.

Abstract: A method is provided to increase the speed of a non-volatile memory transistor by increasing the read channel current in the non-volatile memory transistor. This increase in speed is accomplished without increasing the VCC voltage supply source or decreasing the channel length of the non-volatile memory transistor. The increase in read channel current is accomplished by applying a low voltage to the substrate region of the non-volatile memory transistor, while grounding the source of the non-volatile memory transistor. If the non-volatile memory transistor is located in an array, the low voltage is applied to the sources and drains of non-volatile memory transistors on unselected bit lines to inhibit junction leakage channel current from these unselected non-volatile memory transistors.

Abstract: A low voltage interface circuit with a high voltage tolerance enables devices with different power supply levels to be efficiently coupled together without significant leakage current or damage to the circuits. The interface circuit includes an impedance control circuit, an output buffer, an input buffer, an isolation circuit, and a pullup protection circuit. The output buffer includes a pullup transistor and a pulldown transistor for applying an output signal to an I/O pad. When a high voltage (i.e., higher than the internal voltage of the interface circuit) is applied to the I/O pad, the pullup protection circuit drives the gate of the pullup transistor to the high I/O pad voltage to ensure that no current flows to the positive supply voltage. Also, the isolation circuit couples the high I/O pad voltage to the body (well) of the pullup transistor to prevent leakage current through parasitic diodes formed by the pullup transistor.

Abstract: In a charge pump system, the frequency of an oscillator is based on the output signals from a plurality of differential amplifiers. Each differential amplifier receives a different reference voltage as well as a common input voltage derived from the pumped voltage. A predetermined logic signal output by the differential amplifiers modifies, i.e. reduces, an original frequency of the oscillator. In this manner, the charge pump system quickly compensates for any overshoot in the pumped voltage in a manner directly correlated to the magnitude of the pumped voltage. If no differential amplifiers output the predetermined logic signal, then the oscillator generates the original frequency. In this manner, the charge pump system also compensates for any undershoot in the pumped voltage by providing the fastest frequency.

Abstract: A plurality of flash electrically erasable programmable read only memory (EEPROM) cells is disclosed wherein metal lines couple both the sources and the drains of the flash cells. Reading of these flash cells is accomplished by applying a positive voltage to the source and reading from the associated metal source line. A soft erase scheme for increasing the threshold voltage of over-programmed flash cells is provided that prevents the leakage caused by applying a positive voltage to the drain.

Abstract: A three terminal non-volatile memory element includes a standard (low voltage) CMOS transistor, i.e. a storage transistor, having a drain coupled to a read bit line and a source connected to ground. The storage transistor is programmed by applying a high programming voltage to its gate, thereby rupturing the gate oxide of the storage transistor. Of importance, in submicron technology, the source and drain regions of the storage transistor merge, thereby providing a highly reliable, conductive path. Thus, the state of the memory cell can be advantageously read solely via the read bit line.

Abstract: A window pane architecture for FPGAs utilizes spaced subarrays having routing channels therebetween. In one embodiment, at least one routing channel includes segmented and staggered routing wires to minimize current loading and capacitive time delay. Connections between the configurable logic blocks, interconnect, and routing wires may be accomplished with switch matrices and programmable interconnect points.

Abstract: The invention provides a programmable delay element and a programmable slew rate element to allow post-fabrication adjustment and programming of input delay and output slew rate to iteratively alter input delay and output slew rate without redesign and refabrication of the circuit. The invention provides programmable memory cells coupled to a capacitive load via a plurality of switches. The capacitive load is coupled to a signal path and comprises a plurality of capacitors. The programmable memory cells selectively turn on the switches coupled to the capacitive load. In one FPGA implementation, the programmable memory cells are implemented in IOBs and are loaded with appropriate data during a device configuration stage. Delay equalization can be achieved by programming the memory cells such that the delays seen by device I/O pins are equal between IOBs and pads. The invention also provides a slew rate control circuit for an inverter or a buffer to provide an optimal slew rate.

Abstract: The maximum propagation speed of an electrical signal travelling on a conductor in an integrated circuit is limited by the dielectric constant of the dielectric material surrounding the conductor. Rather than transmitting an electrical signal through a conductor that is surrounded with a dielectric material having a dielectric constant of two or more, the signal is propagated as an electromagnetic wave through air at a much higher speed across the surface of the integrated circuit. In one embodiment, a radio frequency (RF) signal is passed into an integrated circuit package via a transmission line. The transmission line supplies the RF signal to a waveguide-like structure disposed above the integrated circuit inside the package. The RF signal propagates as an electromagnetic wave through air in the waveguide structure across the upper surface of the integrated circuit.

Abstract: The Intelligent DMA Controller (IDMAC) significantly reduces system latency by replacing one or more layers of software with hardware. The IDMAC uses controlwise and datawise intelligence. The controlwise intelligence of the IDMAC is given specific knowledge of the structure of certain pieces of memory or hardware registers, (e.g. parameter blocks), used for Inter Process Communication. This specific knowledge can be imparted during the design phase of the IDMAC, or dynamically provided during its operation as system requirements dictate. The IDMAC achieves its DMA controlwise intelligence by understanding parameter blocks (PBs). The IDMAC reads the structure of the PB from memory directly, gets all of its PB parameters directly from memory, dereferencing as required, and then begins transferring data between the source and destination as instructed by the PB(s). Examples of PB parameters are source address, destination address, transfer length, and data intelligence opcode.

Abstract: A system and method for configuration of electronic devices using a smart card. A smart card configurable and testable system includes a programmable device, a bridge coupled to the programmable device, and a smart card interface coupled to the bridge. The bridge is configured and arranged to format configuration data from the smart card for transmission to the programmable device, and the smart card interface arrangement is configured and arranged to provide configuration data from the smart card to the bridge.

Abstract: A structure for providing clearing/programming includes a plurality of synchronous flip-flops, and a plurality of associated two-input multiplexers. A control signal in a first logic state provided to the multiplexers provides a first signal propagation direction through the flip-flops, whereas the control signal in a second logic state provides a second signal propagation direction through the flip-flops. One method for clearing and programming a programmable logic device includes arranging a plurality of memory cells in sets, clearing the sets in a first spatial sequence, and programming the sets in a second spatial sequence. Sets of memory cells could include columns of memory cells, each column having an associated storage element. In this manner, a plurality of columns of memory cells can be cleared or programmed in any predetermined order.

Abstract: A method of minimizing power use in programmable logic devices (PLD) using programmable connections and scrap logic to create a versatile power management scheme. Individual product terms in a PLD can be powered off, thereby saving power, without incurring the power-up and settling time delays seen in the prior art. Power management is not restricted to any one function block, nor must the entire device be powered down, unless so programmed. All conventional logic functionality present in the PLD is available to the power management elements, allowing, in one embodiment, a standard function block to be programmed to operate as the control function block. This logic functionality includes, but is not limited to, internal feedback, combinatorial functions, and register functions. Because scrap logic resources left over from user programming and small programmable connections are used, minimal additional chip surface area is needed.

Abstract: A method of operating a pin of an in-system programmable logic device (ISPLD) which includes the steps of (1) applying a predetermined voltage to the pin when the ISPLD is in a set-up mode, and (2) maintaining the last voltage applied to the pin when the ISPLD is in a normal operating mode. The ISPLD is in the set-up mode when the logic of the ISPLD has not yet been configured, or is being configured. The ISPLD is in the normal operating mode after the logic of the ISPLD has been configured. A particular ISPLD includes a pin and a logic gate having a first input terminal coupled to the pin, a second input terminal coupled to receive a control signal, and an output terminal coupled to the pin. When the ISPLD is in the set-up mode, the control signal causes the logic gate to apply a predetermined voltage to the pin. When the ISPLD is in the normal operating mode, the control signal causes the logic gate to maintain the last applied voltage on the pin.

Abstract: A fault tolerance method for FPGAs featuring interconnect resources made up of wiring segments that are programmably coupled to two or more configurable logic blocks (CLBs) through connection switches. In accordance with a first embodiment, one of the wiring segments is designated as being reserved for each CLB. During routing, a wiring segment is assigned to a signal path only if the signal path is not associated with signal transmission to or from the CLB to which the wiring segment is reserved. In accordance with a second embodiment, one or more connection switches are designated as reserved switches for each horizontal segment. During routing, the reserved switches are not used to route signal paths. Fault tolerance is then performed by shifting the logic portion assigned to a defective CLB and/or the associated switch configuration data along its row towards a spare CLB located at the end of the row.

Abstract: A system and method are disclosed for providing highly parallel, FFT calculations in a circuit including a plurality of RADIX-2 elements. Partitioned RAM resources allow RADIXes at all stages to have optimal bandwidth memory access. Preferably more memory is made available for early RADIX stages and a "critical" stage. RADIXes within stages beyond the critical stage preferably each need only a single RAM partition, and can therefore simultaneously operate without fighting for memory resources. In a preferred configuration having P RAM partitions and P RADIX stages, the critical stage is stage number log.sub.2 P, and until the critical stage, only P/2 RADIX elements can simultaneously operate within each stage. After the critical stage, all RADIXes within each stage can simultaneously operate.

Abstract: A field programmable gate array (FPGA) which includes first and second arrays of configurable logic blocks, and first and second configuration cache memories coupled to the first and second arrays of configurable logic blocks, respectively. The first configuration cache memory array can either store values for reconfiguring the first array of configurable logic blocks, or operate as a RAM. Similarly, the second configuration cache array can either store values for reconfiguring the second array of configurable logic blocks, or operate as a RAM. The first configuration cache memory array and the second configuration cache memory array are independently controlled, such that partial reconfiguration of the FPGA can be accomplished. In addition, the second configuration cache memory array can store values for reconfiguring the first (rather than the second) array of configurable logic blocks, thereby providing a second-level reconfiguration cache memory.

Abstract: Described are dynamic memory cells for use in FPGAs. Each memory cell includes a dynamic memory element that occupies less chip area than conventional static memory elements and that can be implemented using standard CMOS processes. In one embodiment, a conventional access transistor is connected to a pass transistor via a CMOS inverter. The CMOS inverter includes a pair of complementary MOS transistors sharing a common gate connection, and therefore exhibiting a combined gate capacitance. This gate capacitance at the input of the inverter supplements or replaces the capacitor normally required in conventional dynamic memory cells. Another embodiment uses the parasitic gate capacitance of a pass transistor for dynamic data storage. This embodiment requires that the voltage levels on the source and drain of the pass transistor be controlled during write and refresh operations to ensure that the gate capacitance of pass transistor stores an appropriate level of charge.

Abstract: A method for designing an integrated circuit comprises the step of selecting a system-level parameterized module that performs a specified type of function. The method also includes the steps of specifying values for parameters of the selected system-level module and generating a netlist file from the selected system-level module. In one embodiment, the system-level parameterized module is selected from a family of system-level parameterized modules that each perform a particular function within different parameter ranges.

Abstract: A decryption scheme is provided for encrypted configuration bitstreams in a programmable logic device. One embodiment includes circuitry for altering a decryption key for a plurality of encrypted bitstream portions, thereby providing a high level of security of the circuit layout embodied in the bitstream.