Abstract: A self-tracking high voltage breakdown protection circuit is provided. A non-destructive reference voltage is established by a gated diode having the same breakdown and walkout characteristics as the integrated circuit devices to be protected. A source-follower configuration couples the reference voltage to the integrated circuit. Devices of the protection circuit are internally connected to make each self-protected.

Abstract: A semiconductor device structure is provided in which an electrically isolated or "floating" conductor is adapted to receive electric charge from an electron beam. The resultant stored charge provides the basis for useful electronic functions such as floating gate MOS read-only-memories.

Abstract: Polycrystalline silicon is deposited on the interior surface of a shaped container. The silicon is deposited by reacting hydrogen and a silicon bearing gas in the presence of a high pressure plasma. The silicon body is separated from the shaped container by utilizing thermal expansion shear stress.

Abstract: A method for the substantially continuous growth of polycrystalline silicon ribbon. The polycrystalline silicon is chemically vapor deposited on elongated foils which move slowly through a resistance heated furnace chamber. Vapor sealing entrance and exit ports are provided which allow the continuous transfer of the foils and polycrystalline ribbon between the chamber and the ambient. The foils are positioned within the chamber so as to mask the chamber walls and to restrict the deposition to the foils. All deposition of polycrystalline silicon takes place on one side of each of the foil pieces; deposition on the edges or backs of the foils is prevented by the positioning of the foils relative to each other. Adhesion of the foils to each other is prevented by insuring that all foils are in relative motion.

Abstract: An improved method for initiating the inductive heating of semiconductors in the float zone refining process in which the oscillator circuit generating the required radio frequency energy is initially powered from a constant current source thereby controlling the rate of temperature rise for the semiconductor.

Abstract: Silicon nitride is pyrolytically deposited by the reaction of a halosilane with ammonia in an evacuated system. The process is particularly useful in providing uniform layers of silicon nitride on silicon wafers to be used in the fabrication of semiconductor devices.

Abstract: Plasma reactor apparatus which provides improved uniformity of etching or deposition. A uniform radio frequency (RF) field is established between two closely spaced parallel plates disposed within the reactor. One of the plates functions as a manifold for the reactant gases, mixing the gases and dispensing them through a regular array of orifices into the RF field between the plates. The uniformity results from a combination of the uniform field, the uniform dispersion of reactant gases, and the close proximity of the gas dispersal to the work pieces. The capacity of the apparatus can be increased by repeating the parallel plate structure in a stacked array of alternating grounded and RF energized plates.

Abstract: An IGFET ROM array and method. A high density ROM array and method for its fabrication is disclosed. The memory array is formed of a plurality of VMOS transistors arranged in a matrix. A plurality of spaced apart diffused regions are formed on the surface of an epitaxial layer overlying a heavily doped substrate. V-grooves, oriented along the diffused regions, extend through the epitaxial layer dividing each diffused region into two electrically separate bit lines. Along the edge of the V-groove the substrate forms a source, the epitaxial layer forms the channel, and the bit line forms the drain of each of the plurality of transistors. An insulator layer is formed on the surface of the V-groove and is overlaid by spaced apart conductive word lines running orthogonal to the diffused bit lines. The conductive word lines form the gate electrodes for MOS transistors formed on each side of the V-groove.

Abstract: A reduced pressure induction heated reactor and method for the deposition, especially epitaxial deposition, onto workpieces placed in the reactor. The workpieces are positioned within a hollow susceptor which is, in turn, positioned within a reactor tube. The ends of the reactor tube are sealed by end caps which provide for input and exhaust of reactant species. The workpieces are inductively heated by an RF induction coil which surrounds the reactor tube and which inductively couples with the susceptor. A vacuum pump maintains a low pressure within the reactor tube. Low pressure deposition is made possible without arcing by shorting together the susceptor and end caps and by having the shorted together combination electrically floating.

Abstract: An apparatus and method for controlling a plasma etching reaction. The plasma reaction is controlled by monitoring the output voltage of an optical detector which is responsive to emissions emanating from the reaction. As the output of the detector changes indicating that the first portion of the etching process has been completed, the average power density supplied to the reaction is reduced by switching the applied power from a continuous wave to a pulsed mode. The reaction is allowed to continue the completion in the reduced power mode.

Abstract: Apparatus for the float zone refining of large semiconductor crystals. Additional support in the form of lightweight pins is provided for the growing monocrystalline rod to hold the rod on the proper vertical axis. The pins protrude from the telescoping inner wall portion of the refining enclosure. This telescoping enclosure portion allows the pins to be in synchronous motion with the monocrystalline rod and also reduces the overall height of the apparatus.

Abstract: A method for electroplating a metallic layer onto the surface of a photovoltaic device absent any external electrical contacts to the surface. The photovoltaic device is placed in an electrolytic plating bath where it is illuminated with electromagnetic radiation to which the device is photovoltaically responsive. Plating from the electrolytic bath results from current flow generated in the device itself.

Abstract: A method for the substantially continuous growth of polycrystalline silicon ribbon. The polycrystalline silicon is chemically vapor deposited on elongated foils which move slowly through a resistance heated furnace chamber. Vapor sealing entrance and exit ports are provided which allow the continuous transfer of the foils and polycrystalline ribbon between the chamber and the ambient. The foils are positioned within the chamber so as to mask the chamber walls and to restrict the deposition to the foils. All deposition of polycrystalline silicon takes place on one side of each of the foil pieces; deposition on the edges or backs of the foils is prevented by the positioning of the foils relative to each other. Adhesion of the foils to each other is prevented by insuring that all foils are in relative motion.

Abstract: An enclosed solar cell array. The array is enclosed between a metal back plate and a cover glass. The edges of the enclosure are sealed by a pliable sealant material and a spring loaded bezel that is riveted or welded in place. The interior of the enclosure is filled with a potting material which surrounds and cushions the solar cell array. During the module fabrication a fixture supports the enclosure parts and provides a temporary edge seal to facilitate the potting procedure. Controlled flexure of the enclosure back plate and controlled spacing of the cover glass ensure a compressive loading of the potting material which eliminates possible delamination of the potting material in its subsequent usage.

Abstract: An interconnection system for interconnecting a plurality of photovoltaic devices. The photovoltaic devices each have a first and a second side and the interconnect system is located on the second side of the photovoltaic devices. A sheet of dielectric material and a sheet of electrically conductive material are bonded together and positioned so that the dielectric material is next to the photovoltaic devices. A plurality of patterns are formed in the sheet of electrically conductive material. The patterns each have angled tabs punched therein so that the angled tabs are punched through both the electrically conductive material and the dielectric material. When a photovoltaic device is positioned within a group of angled tabs, the angled tabs can be brought into contact with electrical contacts on the first side of the photovoltaic device. The group of angled tabs are electrically common to a part of the pattern which has an extended portion which extends beneath an adjacent photovoltaic device.

Abstract: A holder and method for controlling and uniformly maintaining the temperature of work pieces when the work pieces are acted upon by a plasma in a plasma reactor apparatus. Support means which hold the work pieces so as to expose them to the reactive plasma also position metallic plate members which are capable of being heated to an elevated temperature by the plasma when in electrical contact with an electrode of the plasma reactor apparatus. The metallic plate members are all electrically shorted together, but are insulated from the support means. A temperature sensitive switch connects the metallic plate members to an electrode of the plasma apparatus. Work pieces to be acted upon by the plasma are placed in proximity to the metal plate members. In the presence of a plasma and when shorted to the apparatus electrode, the metallic plate members are rapidly heated and heat is conducted to the work pieces to heat them uniformly.

Abstract: An induction heating coil for the float zone melting of semiconductor materials. The distribution of current on the surfaces of the coil is modified by altering the surfaces of the coil. The alteration of the surfaces is in the form of selectively positioned saw slots and solid conductor strips. The current distribution can be controlled independently on the top and bottom surfaces of the coil.

Abstract: A plasma reactor apparatus providing improved uniformity of etching and having a totally active reaction volume. The reactor apparatus is comprised of two electrically separated electrodes which bound a reaction volume. The topmost electrode functions as both a gas distribution manifold for uniformly injecting reactant gases into the reaction volume and as an exhaust manifold for uniformly withdrawing reaction products from the reaction volume. The two electrodes are so configured that the plasma reaction takes place only between the electrodes; there is no inactive space surrounding the electrodes to fill with plasma. The configuration is thus conservative of both reactants and energy. The bottommost plate which serves as a workpiece holder is movable with respect to the upper plate to permit loading and unloading of workpieces. The uppermost plate is the active RF electrode while the workpiece holder is maintained at a RF ground potential.

Abstract: A package and a method of packaging semiconductor devices, especially in expanded wafer form. The package is formed by sticking an adhesive backed ring to the plastic sheet upon which the expanded wafer is affixed so that the ring surrounds the wafer. The adhesive backed ring holds the plastic sheet securely and protects the surface of the wafer. The package is completed by covering the wafer with a second protective sheet and vacuum sealing in a plastic bag.

Abstract: A double master mask process for fabricating semiconductor integrated circuits is provided in which selectively etchable dielectric layers and ion implanted resistors are used to form dense integrated circuits with a minimum number of critical alignments. A first silicon dioxide silicon nitride layer used in conjunction with a first master photomask defines a base region and an isolation region which are self-aligned with respect to each other and with respect to resistor contact regions. After isolation and base diffusion, the first oxide/nitride layer is stripped away and a second oxide/nitride layer is grown. Using a photoresist mask, a predeposition layer for the resistor is then formed using ion implantation through the oxide/nitride layers. A second master photomask allows the formation of collector and emitter regions and base and resistor contact which are self-aligned with respect to each other.