Abstract: An interconnection system for interconnecting a plurality of photovoltaic devices. The photovoltaic devices each have a first and a second side and the interconnect system is located on the second side of the photovoltaic devices. A sheet of dielectric material and a sheet of electrically conductive material are bonded together and positioned so that the dielectric material is next to the photovoltaic devices. A plurality of patterns are formed in the sheet of electrically conductive material. The patterns each have angled tabs punched therein so that the angled tabs are punched through both the electrically conductive material and the dielectric material. When a photovoltaic device is positioned within a group of angled tabs, the angled tabs can be brought into contact with electrical contacts on the first side of the photovoltaic device. The group of angled tabs are electrically common to a part of the pattern which has an extended portion which extends beneath an adjacent photovoltaic device.

Abstract: A solder glass/ceramic composition and method for sealing television picture tube components wherein the composition remains vitreous throughout the sealing process. The composition comprises a mixture of 9-15 weight percent aluminum oxide and 91-85 weight percent solder glass. The solder glass components comprise, in weight percent of the glass alone, SiO.sub.2 about 2-4 percent, PbO about 64-66 percent, PbF.sub.2 about 5-10 percent, ZnO about 6-9 percent, CdO about 4-6 percent, and B.sub.2 O.sub.3 about 12-14 percent.

Abstract: An apparatus for the high-speed handling of integrated circuit parts. The apparatus consists essentially of two parts, a test wheel and a sort wheel. It singulates parts from a reservoir of untested parts, moves the parts to electrical contacts for test, moves the tested part out of the contacts and sorts the part into the proper bin.

Abstract: A method of producing a sheet of semiconductor material directly usable for the production of solar cells is disclosed. The method comprises establishing a molten region at an edge of a sheet of semiconductor material, moving the molten region across the sheet to create a path of elongated crystal grains, establishing a molten zone along a portion of the path of the elongated crystal grains and parallel thereto, and causing the molten zone to travel in a direction transverse to the path of elongated crystal grains.

Abstract: Semiconductor devices with special reference to the process for fabricating tuning diodes. This invention includes the super-position of a multiplicity of ion implants and thermal redistribution cycles for the purpose of establishing a particular distribution of dopant atoms in the electrically active portion of the device.

Abstract: Sealing apparatus for the automatic assembly of integrated circuit packages. The semiconductor device package is comprised of an upper and lower ceramic cover, and a metal lead frame having mounted thereon the integrated circuit. The automatic ceramic sealing apparatus provides a good quality hermetic seal of the integrated circuit within the ceramic covers by including continuously heated sealing presses mounted on a rotary dial table.

Abstract: Silicon dioxide is pyrolytically deposited by the reaction of silane with oxygen on vertically mounted substrates in an evacuated system. A standard diffusion furnace equipped with a furnace tube which is vacuum tight is used. Injection tubes having multiple injection ports are positioned within the furnace tube to distribute the silane and the oxygen uniformly across a plurality of substrates which are positioned perpendicular to the furnace tube axis in a boat covered with a perforated shroud. The process is particularly useful in providing for the low temperature deposition of uniform layers of silicon dioxide on silicon wafers to be used in the fabrication of semiconductor devices.

Abstract: A method for the magnetron sputtering of ferromagnetic material. An alloy of the ferromagnetic material is formed such that the alloy retains the desired characteristics of the material but the alloy has a Curie temperature that is below the sputtering temperature. In particular, the method can be applied to nickel by alloying the nickel with copper, platinum, or tin.

Abstract: A modular flat plate solar collector for fluid such as air or water includes a plurality of stacked, separable solar collector elements or sub-assemblies. Removable fastening members maintain the sub-assemblies in intimate contact with each other during operation and permit access and replacement of the sub-assemblies for repair purposes. This modular approach provides a reliable, low-cost and structurally strong unit. The use of a flow channel plate having passages with aspect ratios substantially in the range of 20 or greater further improves the performance and efficiency of the collector.

Abstract: An improved lead frame having an electrically isolated heat sink portion is provided for the manufacture of high heat dissipating semiconductor devices. A large heat sink metallic portion having an exposed surface has plastic encapsulating material partially disposed thereabout such that associated semiconductor device leads are correctly positioned with respect to the heat sink metallic portion but are electrically isolated from it. A semiconductor chip is mounted directly on the heat sink metallic portion such that high heat dissipation is obtained. The lead frame provides for a plurality of metallic heat sink portions joined to a corresponding plurality of semiconductor device lead portions. Joining means positioned in the frame between adjacent metallic heat sink portions and correspondingly between successive semiconductor device lead portions are attached to each other to hold the respective portions of the lead frame in proper relationship to each other during the assembly process.

Abstract: A metallization system for metallurgically bonding a semiconductor die to metallic conducting slugs as terminals at the same time, and at the same temperature, that a surrounding glass sleeve is hermetically sealed to the conducting slugs for forming a zener diode, for example, is disclosed. The metallization system comprises a combination of aluminum, tin and palladium, for bonding to molybdenum, the aluminum being vapor deposited followed by a vapor co-deposition of aluminum and tin and further followed by a vapor deposited layer of palladium.

Abstract: An insulating or passivation glass consisting of 36 to 40 volume percent zircon and the balance is a base glass consisting essentially of 2 to 6 percent-SiO.sub.2, 70 to 75 percent-PbO 5 to 9 percent-ZnO, 0 to 4 percent-BaO, 2 to 5 percent-CdO, 0 to 2 percent-TiO.sub.2 and 10 to 14 percent-B.sub.2 O.sub.3, all of said percentages being weight percent.

Abstract: Truly amorphous silicon having a low level of undesired impurities, and therefore suitable for semiconductor applications, may be prepared by the present process. Impure silicon, for example, metallurgical grade silicon, is prepared at an elevated temperature, e.g., above 1400.degree. C. The impure silicon and at least one binary silicon fluoride compound, e.g., silicon tetrafluoride, are chemically combined at the elevated temperature to form silicon difluoride gas. The silicon difluoride gas is polymerized. The silicon difluoride polymer is then thermally decomposed to produce the purified, amorphous silicon and binary silicon fluoride by-products. The binary silicon fluorides are recycled in the process to be chemically combined with the impure silicon. That step and the succeeding steps serve to reduce the level of unwanted impurities in the silicon produced by at least several orders of magnitude.

Abstract: Improved stabilization of 1,1,1-trichloroethane is obtained by employing a free radical scavenger as a stabilizer which will trap trichloromethyl radicals, making them unavailable for formation of acidic species in the trichloroethane. Examples of such free radical scavengers include trichloroethylene, tetrachloroethylene, or fluorene. Compositions in accordance with the invention consist essentially of the 1,1,1-trichloroethane and from about 0.1 volume percent to about 5 volume percent of the free radical scavenger. In the fabrication of semiconductor devices in which the so stabilized trichloroethane is employed as a degreasing solvent, the acidity of the trichloroethane composition may be monitored, and additional free radical scavenger added to the solution to maintain the acidity within acceptable limits, thus allowing the trichloroethane to be used indefinitely.