Abstract: Defects in dielectric layers exhibiting low dielectric strength on silicon substrates (11) are deliberately damaged during manufacture to allow their repair by the formation of dielectric plugs (13B). The defects are damaged by the application of an electric field, and are repaired by the selective oxidation or nitridation of the silicon substrate underlying the damaged areas of dielectrics.

Abstract: A method and apparatus is described for dynamically testing the overall performance characteristics of digital-to-analog converts and analog-to digital converters which involve excitation of the converters by an orthogonal function signal. Specifically the method comprises dynamically exercising a converter with an analog or digital signal pattern characterized by the sum of a set of mutually orthogonal functions, the sum having substantially uniform amplitude distribution among allowable states (maximum entropy), and simultaneously examining the output response of the converter for a plurality of basic performance parameters. The basic performance parameters typically include distortion, linearity and optimum gain. The simultaneous examination involves sorting out expected responses to simultaneously applied orthogonal signals. The method yields a relatively complete statistical description of the performance characteristics. The preferred excitation is based on the Walsh functions.

Abstract: An integrated circuit structure and process for fabricating it are described which allow fabrication of a very compact high-speed logic gate. The structure utilizes a bipolar transistor formed in an epitaxial silicon pocket surrounded by silicon dioxide. A pair of Schottky diodes and a resistor are formed outside the epitaxial pocket on the silicon dioxide and connected to the pocket by doped polycrystalline silicon.

Abstract: The method of the invention provides a thin film deposit of a binary glass for use in integrated circuits which binary glass has a softening or flow point far below temperatures at which glasses normally used in connection with integrated circuits flow. After the binary glass has been deposited (on a semiconductor substrate), it is heated and reflowed. Preferably the glass comprises a mixture of germanium dioxide and silicon dioxide wherein the germanium dioxide is no greater than approximately 50 mole percent of the mixture. Phosphorus is added to the glass film for passivation of the underlying devices.

Abstract: A method for scanning the top surface of a semiconductor wafer prevents damage to the wafer (11) by ensuring that the laser beam (13) does not cross over the edge (11a) of the wafer during the scanning process nor approach within one (1) to two (2) millimeters to the edge of the wafer.

Abstract: A broad bandwidth segmented acoustic transmitter is described formed of a plurality of differently sized, closely spaced acoustically active and separately energizable segments. Each segment is operated at a separate resonance to provide, with the acoustic energy from the other segments, a broad frequency spectrum composite acoustic pulse. In one embodiment the segments are aligned along a common axis with their respective lengths, as measured along this axis, selected to provide an acoustic pulse with broad bandwidth. The segments are energized by a common pulse to provide an acoustic spectrum which improves the measurement of acoustic parameters such as the compressional and shear wave interval travel times.

Abstract: A microprocessor comprising: an address data path; an arithmetic logic unit data path, said data paths being capable of simultaneous operation; an information bus; a shared bus register; a shared input multiplexing apparatus for selectively transferring address and data information from said information bus and data information from said arithmetic logic unit data path to said shared bus register; and a multiplexing apparatus for transferring information from said shared bus register to said arithmetic logic unit data path and to said information bus via said address data path whereby said shared bus register is selectively useable as a memory data register, a memory address register and a temporary or "scratch-pad" register during normal operation of the microprocessor; and further comprising; a programmable logic array containing a sequence of microinstructions and apparatus connected thereto for testing the operability of the microprocessor.

Abstract: A method of removing bulk impurities from a semiconductor wafer is described comprising the steps of lapping the front and back surfaces of the wafer to remove 35 to 40 microns of material therefrom and to make the surfaces parallel, heating the wafer at a predetermined temperature preferably equal to or above the highest temperature to be used in subsequent device fabrication, etching the front and back surfaces of the wafer to remove 35 to 40 microns of material therefrom and thereafter polishing the front surface of the wafer for removing 20 microns of material therefrom. By means of the above process the number of surface defects caused by strain producing centers in the crystal lattice of the wafer is reduced from 500,000 defects per square centimeter to less than 1,000 defects per square centimeter.

Abstract: Diagnostic testing of a charge coupled device is facilitated by interconnecting the reference node of the sense amplifier for each data block in the CCD device with a probe contact on the device, thereby eliminating the need for applying a microprobe to the sensitive reference node. Reference voltages under different operating conditions can be evaluated by measuring the device generated reference voltage or by applying variable reference voltages through the probe contact to the reference node.

Abstract: An address gate for a random access memory includes a pair of emitter-coupled and collector-coupled transistors, and another transistor emitter-coupled to the pair of transistors. Complimentary outputs are read at the coupled emitters of the pair of transistors and the collector of the other transistor respectively, there being an input signal applied to the base of one of the pair of transistors, and a control signal applied to the base of the other of the pair of transistors, which overrides the operation of one of the pair of transistors when the control signal is in its high state.

Abstract: A process and resulting structure are disclosed for forming vias in integrated circuit structures using metal silicide interconnections. A lower conductor is formed by sequentially depositing silicon and a refractory metal which reacts with the silicon to create a layer of metal silicide. A subsequent layer of silicon is deposited on the surface of the metal silicide. This layer of silicon is insulated from overlying layers by forming insulating material over desired regions of the layer of silicon. A second layer of metal is then deposited across the structure. In openings in the insulating material the metal reacts with the second layer of silicon to form a via of metal silicide. A final layer of silicon may be deposited to convert any remaining metal in the second layer of metal to metal silicide, and the structure annealed to lower its resistivity.

Abstract: A process for fabricating an electrically erasable nonvolatile memory cell comprises forming a first region of insulating material which is less than about 200 Angstroms thick on a selected surface portion of an electrically-isolated relatively lightly doped pocket of epitaxial silicon of a first conductivity type such that first and second surface areas of the epitaxial pocket are exposed. Regions of the epitaxial pocket underlying the first and second exposed surface areas are doped such that first and second relatively lightly doped regions of a second conductivity type are formed in the epitaxial pocket. Relatively heavily doped polysilicon regions of the first conductivity type are formed on the first insulating region and on the second relatively lightly doped epitaxial region.

Abstract: An interruptible microprogram sequencing unit (MSU) for providing a sequence of microinstruction addresses to a control memory containing microinstructions for the operation of a microprogrammed apparatus. The MSU includes an address output for providing microinstruction addresses to the control memory, an address bus connected to the address output such that a plurality of microinstruction addresses applied to the address bus are sequentially provided to the address output, means connected to the address bus for applying the plurality of microinstruction addresses to the address bus, an interrupt return register operably connected to the address bus for receiving a microinstruction address from the address bus and storing the received microinstruction address, and means connected to the address bus for interrupting the sequence of microinstruction addresses and effecting storage of a microinstruction address on the address bus in the interrupt return register.

Abstract: Apparatus for amplifying output signals from a charge coupled area imaging device includes a resettable first floating gate amplifier connected to sense charge in the charge coupled device output register at a first location, a second floating gate amplifier connected to sense charge in the charge coupled device output register at a second location, and a charge limiting well disposed between the first location and the second location to remove charge in excess of a desired amount before the output signals are sensed at the second location. The dual preamplifiers permit optimization of the output signals from the charge coupled imaging device for two substantially different light levels by providing a substantially lower noise equivalent input signal level from the second preamplifier.

Abstract: A microprocessor for facilitating the execution of instructions which require repetitive shift and arithmetic logic unit operations comprises an arithmetic logic unit having a first and a second input and an output, a plurality of registers, at least one of which is a bidirectionally shifting register and multiplexing apparatus for selectively coupling each of said plurality of registers to said first and said second inputs and said output of said arithmetic logic unit.

Abstract: A microprocessor integrated circuit design has improved partitioning between integrated injection logic (I.sup.2 L) and transistor-transistor logic (T.sup.2 L) in the integrated circuit. An information bus structure incorporating a bidirectional input and output buffer and a bidirectional input and output multiplexer minimizes the number of internal bus lines in the integrated circuit. An improved T.sup.2 - I.sup.2 L interface circuit and structure supplies a T.sup.2 L input to a plurality of I.sup.2 L input stages, each having a restricted cross-sectional area resistor element in the base of an I.sup.2 L input transistor. A storage register in the integrated circuit has a multiplexer portion provided at each flip-flop circuit of the register. A high speed feed forward flip-flop circuit is employed in registers of the integrated circuit where speed is critical. An improved voltage regulator and current source combination in a programmable logic array (PLA) reduces PLA temperature sensitivity. A pair of I.sup.

Abstract: Circuitry for presetting a bipolar random access memory includes switching transistors, responsive to an applied memory preset signal, for opening the circuit between the memory word lines and their respective current sources, for applying a positive voltage to the bottom word lines, for breaking the circuitry between bit line clamping circuits and their respective power sources, and for grounding the bit line pairs to drain all current from the bit line circuits. The preset circuitry also includes read/write control transistors coupled between each bit line and a V.sub.cc source for steering the set of the memory cells upon removal of the preset signal.

Abstract: A discharge circuit for rapidly discharging the word lines of random access memories to thereby prevent erroneous reading from or writing into the memory during periods when the word lines are in a mid-state transition between selected and deselected voltage levels. Each discharge circuit associated with the memory word lines includes a transistor that is conductive only when a full select voltage level is applied to the word line and which controls conduction of a second multi-collector transistor coupled between top and bottom lines of a word line pair and a current source to discharge the word line pair during the mid-state transition period and to thus increase the speed capabilities of the memory.

Abstract: A lead frame (20) for tape automated bonding includes individual leads (12) each having a stretch loop (40) to accommodate elongation of the loop as the lead is bonded to a substrate (28) after inner lead bonds have been formed to an integrated circuit (26). Such a lead frame allows temporary connection and testing of the circuit prior to final lead formation and packaging.

Abstract: Method and apparatus for forming a ball at the end of bonding wire or lead wire in a capillary wire holding and bonding tool is described suitable for ball bonding of copper and aluminum lead wire to integrated circuit chips. A ball is formed by substantially enclosing the end of the bonding wire in a shroud or shield, flooding the shroud or shield and the end of the bonding wire with an inert gas, and generating a controlled pulse train of a preset count of electrical pulses for establishing arc discharge between the wire and the shroud or shield. The method permits precise control and metering of energy delivered by controlling the parameters of the pulses of the pulse train for melting and forming a ball of uniform quality without oxidation of the metal. Corresponding apparatus and circuitry are described which may be retrofitted into stock ball bonding machines or provide new machines.