Abstract: A door assembly is provided comprising a plurality of interlocked door panels. Each of the door panels defines a length dimension, a height dimension, and a thickness dimension. Each of the door panels also defines a female portion, a male portion, and a panel body portion. The female portion and the male portion are defined near opposite extremes of the height dimension. The panel body portion mechanically couples the female portion to the male portion. The female portion defines an inside diameter. The male portion defines an outside diameter. The inside diameter of the female portion is sized to accommodate the outside diameter of the male portion. Each of the door panels are interlocked to an adjacent one of the door panels via accommodation of a male portion of one of the panels within a female portion of another of the panels. The female portion is preferably a rigid metal, e.g., Aluminum, and the male and panel body portions are preferably a plastic material, e.g., polyvinyl chloride (PVC).

Abstract: An apparatus is provided for in-line folding and affixing a label to an article, the label having a fold line thereacross defining a foldable portion and a cover portion of the label. The apparatus comprises a transfer grid having one or more rollers to convey the label from a first end of the transfer grid to a second end of the transfer grid. An opening is defined between two of the rollers intermediate the first and second ends of the transfer grid. The transfer grid conveys the label in a substantially unfolded orientation from the first end of the transfer grid to the opening of the transfer grid such that the foldable portion of the label is projective through the opening. A folding station is adjacent the opening and receives the foldable portion of the label, urging a projecting portion of the foldable portion over the cover portion to define a substantially folded-over orientation of the label.

Abstract: A process for the production of phosphoric acid esters or phosphoric acid ester mixtures of polyhydric alcohols by reaction of the polyhydric alcohols with phosphorus pentoxide is characterized in that the amount of phosphorus pentoxide which is required for the esterification operation is suspended in an amount of the ester or ester mixture to be produced, thereupon the amount of polyhydric alcohol required for the esterification operation and possibly water is added at a temperature in the range of between 20 and 180° C., thereupon the esterification reaction is substantially completely executed and thereafter the product is obtained. The products of the process are used for the production of flame-proofing treatments.

Abstract: A semiconductor substrate with a plurality of semiconductor devices formed therein is processed by initially forming a silicon nitride insulating layer over the semiconductor devices. Interconnect holes are formed in the insulating layer. The interconnect holes are filled with a silver-based conductive material so that portions of the silver-based conductive material extend beyond the uppermost boundary of the interconnect holes. The device is then chemically and mechanically planarized with a processing slurry selected to be minimally selective of silicon nitride and relatively highly selective of the silver-based conductive material. The processing slurry comprises an abrasive and an oxidizer. In this manner, the portions of the silver-based conductive material extending beyond said uppermost boundary of the interconnect holes are removed.

Abstract: The method of the present invention has the steps of (a) flash evaporating a conjugated material in an evaporate outlet forming an evaporate; (b) passing the evaporate to a glow discharge electrode creating a glow discharge conjugated monomer plasma from the evaporate; and (c) cryocondensing the glow discharge conjugated monomer plasma on a substrate and crosslinking the glow discharge conjugated monomer plasma thereon, wherein the crosslinking results from radicals created in the glow discharge conjugated monomer plasma and achieves self curing.

Abstract: High surface energy vapor grown carbon fibers and methods of making such fibers. The high surface energy vapor grown carbon fibers of the present invention have a surface energy greater than about 75 mJ/m2 without post-manufacture treatment.

Abstract: A computer system and a printed circuit board assembly are provided comprising first and second semiconductor dies and an intermediate substrate. The intermediate substrate is positioned between a first active surface of the first semiconductor die and a second active surface of the second semiconductor die. The first semiconductor die is electrically coupled to the intermediate substrate. The intermediate substrate defines a passage there through The second semiconductor die is secured to the second surface of the intermediate substrate within a cavity in the second surface of the intermediate substrate such that the conductive bond pad of the second semiconductor die is aligned with the passage. The second semiconductor die is electrically coupled to the intermediate substrate by at least one conductive line extending from the second semiconductor die through the passage and to the first surface of the intermediate substrate.

Abstract: The present invention is a method of making a thin film of a polyurethane. The method has the steps of: (a) vacuum coating a thin layer of a solventless mixture of a monomer mixture, said monomer mixture selected from the group consisting of polyols, polyisocyanates and combinations thereof, onto a substrate in a vacuum chamber; and (b) curing the monomer as said thin film of said polyurethane.

Abstract: The present invention overcomes the disadvantages of previously known motor controllers for centrifuge machines wherein a motor controller is provided for a centrifuge machine including a logic control module, one or more power cells, and one or more contactors. The logic control module is capable of interfacing with the main centrifuge controller and provides control over the power cells and contactors to provide a voltage ramp-up to accelerate the centrifuge basket. As such, the logic control module avoids the current draining problems associated with across the line starting of the centrifuge motor. The power cells receive a voltage from the main power supply, and output to the contactors variable power to control centrifuge motor speed. Further, the configuration of multiple contactors to reverse the power supplied to the centrifuge motor windings may eliminate the need for a second, reverse direction motor.

Abstract: A method and apparatus for determining gas and liquid flow rates in a multi-phase flow are provided. In accordance with one embodiment of the present invention, a method of determining gas and liquid flow rates in a multi-phase flow is provided. The method utilizes a set of gas phase ultrasonic transducers and a set of liquid phase ultrasonic transducers positioned to direct ultrasonic signals through the multi-phase flow.

Abstract: The present invention is an environmental barrier for an OLED. The environmental barrier has a foundation and a cover. Both the foundation and the cover have a top of three layers of (a) a first polymer layer, (b) a ceramic layer, and (c) a second polymer layer. The foundation and/or the cover may have a at least one set of intermediate barrier each having (a) an intermediate polymer layer with (b) an intermediate ceramic layer thereon. In a preferred embodiment, the foundation has a substrate upon which at least a top is deposited. An OLED is constructed upon the top, opposite the substrate. The cover of at least a top then placed over the OLED. The placement may be by gluing or preferably by vacuum deposition. For use as a display, it is preferred that either the ceramic layer(s) in the foundation, cover or both is substantially transparent to the light emitted by the OLED. Each layer of the foundation and the cover is preferably vacuum deposited.

Abstract: A method of providing even nucleation between silicon and oxide surfaces for growing uniformly thin silicon nitride layers used in semiconductor devices. First, a nonconductive nitride-nucleation enhancing monolayer is formed over a semiconductor assembly having both nitridation receptive and resistive materials. For purposes of the present invention, a nitride-nucleation enhancing monolayer is a material that will readily accept the bonding of nitrogen atoms to the material itself. Next, a silicon nitride layer is formed over the nonconductive nitride-nucleation enhancing monolayer. The nonconductive nitride-nucleation enhancing monolayer provides even nucleation over both the nitridation receptive material and the nitridation resistive material for silicon nitride, thereby allowing for the growth of a uniformly thin nitride layer.

Abstract: A method for making a non-linear optical polymer layer. The method includes flash evaporating a liquid polymer precursor mixture containing a plurality of non-linear optical molecules forming an evaporate, cryocondensing the evaporate on a substrate forming a cyrocondensed polymer precursor layer, and crosslinking the cryocondensed polymer precursor layer. The surface may be electrically biased for poling during crosslinking.

Abstract: A stabilized capacitor using high dielectric constant dielectric materials, such as Ta2O5 and BaxSr(1−x)TiO3, and methods of making such capacitors are provided. A preferred method includes chemical vapor depositing a lower electrode, oxygen doping the lower electrode, oxidizing a surface of the oxygen doped lower electrode, depositing a high dielectric constant oxide dielectric material on the oxidized oxygen doped lower electrode, and depositing an upper layer electrode on the high dielectric constant oxide dielectric material.

Abstract: A high temperature substrate having improved properties. The substrate is a polymer substrate having a glass transition temperature greater than about 120° C., and at least one first barrier stack adjacent to the polymer substrate. The barrier stack includes at least one first barrier layer and at least one first polymer layer. A method for making the high temperature substrate with improved properties is also disclosed.

Abstract: The present invention is directed to a water heater which includes a phase change material having a freezing/melting temperature from about 30° C. to about 90° C. The water heater include a source of water, a heating element for heating the water, a heat exchange unit which contains the material, and a plurality of heat exchange tubes positioned in the heat exchange unit, which tubes are in heat transfer relation to the phase change material so that heat stored in the material can be transferred to the water. The phase change material is preferably heated from the top down to accommodate the changes in volume during thermocycling.

Abstract: An expandable inter-vertebral prosthesis. The prosthesis takes over the supporting function of the inter-vertebra disc between two adjacent vertebra bodies, and includes one or more cages and a reinforcing element. Upon cage expansion, a hollow central portion of the cage can accommodate the reinforcing element. The reinforcing element, upon expansion, assumes a spiral shape, and substantially fills up the hollow central portion of the cage to provide enhanced load-bearing capability in a substantially longitudinal spinal direction. Hinges in the cage permit expansion and, once the cage has expanded, prevent it from collapsing. Delivery of the cage in an unexpanded condition into an inter-vertebral space is ensured with a restraining tool that engages the hinge members. The cage, reinforcing element and restraining tool are inserted with the aid of a conventional delivery tube.

Abstract: A semiconductor structure and a scheme for forming a layer of amorphous material on a semiconductor substrate are provided. In accordance with one embodiment of the present invention, a semiconductor structure is provided comprising an amorphous alloy formed over at least a portion of a semiconductor substrate. The amorphous alloy comprises amorphous aluminum nitride (AlN) and amorphous gallium nitride (GaN). The amorphous alloy may be characterized by the following formula: AlxGa1−xN where x is a value greater than zero and less than one. The amorphous alloy may further comprise indium nitride. Relative proportions of aluminum and gallium in the amorphous aluminum gallium nitride alloy are controlled to engineer the band gap of the amorphous alloy.