Abstract: A dry particulate solids composition is provided which may be reconstituted into a chemical-mechanical polishing slurry.

Abstract: A semiconductor wafer is polished by a method which avoids constant instantaneous relative velocity between the wafer and an abrasive medium. The wafer is held by a tooling head and is contacted by an abrasive pad which is fixedly attached to a table. At least one of the tooling head and the table is movable relative to the other. A controller governs movement of the tooling head and/or the table according to a predetermined polishing pattern to initially effect a uniform instantaneous relative velocity between the wafer and the abrasive pad. The wafer is held by the tooling head in an initial orientation with respect to the abrasive pad. By changing the orientation of the wafer with respect to the abrasive pad, the instantaneous relative velocity changes for at least some point on the wafer.

Abstract: A conditioning disk including a unitary thermoplastic polymer sheet material cut a unitary circular plate formed with gear teeth along its circular edge, and formed with block form protrusions that are impelled in a sweeping motion by rotation of the unitary plate as a planetary gear in meshed engagement with a sun gear and a ring gear of a polishing apparatus.

Abstract: A polishing pad is formed by solidifying a flowable polymeric material at different rates of cooling to provide a polishing pad with a transparent region and an adjacent opaque region. Types of polymeric material suitable for making the polishing pad include a single thermoplastic material, a blend of thermoplastic materials, and a reactive thermosetting polymer.

Abstract: This invention provides a polishing composition with a stable pH for use in CMP of semiconductor substrates comprising: high-purity submicron particles of a metal oxide and a soluble metal salt of the metal oxide. The metal salt is present in a proportionate amount to adjust the aqueous concentration of metal ions to the equilibrium solubility of the metal oxide at the desired pH of the polishing composition.

Abstract: Water based polishing slurries, comprising oxide polishing particles. The polishing slurries comprise an innovative (multi-modal) particle distribution for improved polishing performance.

Abstract: A chemical-mechanical polishing system which is particularly well suited for use in the manufacture of semiconductor devices or the like. The invention is directed to a polishing pad composition comprising a high modulus phase component and a low modulus phase component. The multi-phase polishing pads are very efficient and effective in providing high performance polishing along an entire polishing surface interface.

Abstract: The present invention provides a chemical mechanical polishing slurry for the planarization of shallow trench isolation structures and other integrated circuit structures. The chemical mechanical polishing slurry of this invention comprises small abrasive particles having a mean diameter of between about 2 and 30 nm and large abrasive particles having a mean diameter of between 2 and 10 times larger than the mean diameter of the small abrasive particles. In use, the chemical mechanical polishing slurry of this invention can also include viscosity additives and etchants.

Abstract: A polishing pad made of polymeric material has an improved surface layer which is provided by treating a surface of the polishing pad with a chemical solvent. Solubility parameter is used to select a suitable chemical solvent. The treated polishing pad can be conditioned in substantially less time than an untreated pad.

Abstract: A polishing pad for use with a polishing fluid has, a polishing layer, a window in an opening through the polishing layer, and a fluid impermeable layer spanning across the polishing layer and the window and the opening to provide an uninterrupted continuous barrier to leakage of polishing fluid, the fluid impermeable layer having thereon an adhesive forming bond seals with the polishing layer and the window.

Abstract: This invention describes improved polishing pads useful in the manufacture of semiconductor devices or the like. The pads of the present invention have an advantageous hydrophilic polishing material and are sufficiently thin to generally improve predictability and polishing performance.

Abstract: A fixed abrasive, chemical-mechanical polishing system which is particularly well suited for use in the manufacture of semiconductor devices, memory disks or the like.

Abstract: A composition is provided in the present invention for polishing a composite composite semiconductor structure containing a metal layer (such as tungsten, aluminum, or copper), a barrier layer (such as tantalum, tantalum nitride, titanium, or titanium nitride), and an insulating layer (such as SiO2). The composition comprises an aqueous medium, an abrasive, an oxidant, an organic polymer that attenuates removal of the oxide film having a degree of polymerization of at least 5 and having a plurality of moieties having affinity to surface groups contained on silicon dioxide surfaces. The composition may optionally comprise a complexing agent and/or a dispersant.

Abstract: This invention describes methods of polishing with pads useful in the manufacture of semiconductor devices or the like. These pads have an advantageous hydrophilic polishing material and have an innovative surface topography and texture which generally improves predictability and polishing performance. These pads provide exceptional performance when used for polishing in conjunction with a slurry in which the abrasive particles are stabilized by use of an amino alcohol. They are also useful when used with slurries comprising an organic polymer.

Abstract: A polishing pad having a uniform, continuously interconnected porous surface. The pad is produced by pressure sintering powder compacts of thermoplastic polymer at a temperature above the glass transition temperature but not exceeding the melting point of the polymer. The sintering process is conducted at a pressure in excess of 100 psi and in a mold having the desired final pad dimensions. In a preferred version, a mixture of two polymer powders is used, where one polymer has a lower melting point than the other.

Abstract: A photochemical polishing apparatus is disclosed in which the electromagnetic waves are provided by a waveguide in close proximity to the surface of a silicon wafer electrode.

Abstract: A method of manufacturing semiconductor devices or precursors to semiconductor devices by hydrophobically modifying a device layer to thereby decrease the rate of polishing of the layer by at least 15%. The hydrophobically modified layer can be used as a stop layer to thereby allow for improved planarization of at least one layer of the device.

Abstract: This invention describes improved polishing pads useful in the manufacture of semiconductor devices or the like. The polishing pads of the present invention are formed by sintering or a combination of sintering and molding (including reaction injection molding). The polishing pads of the present invention are made of an advantageous hydrophilic polishing material and have a surface topography and texture which improves their polishing performance.

Abstract: A polishing pad for semiconductor wafers having a polishing surface surrounding at least one wafer non-contact region and a method for disengaging a wafer with the polishing pad is disclosed. The wafer non-contact region(s) are located and dimensioned to provide a location for positioning the wafer prior to disengagement, thereby reducing the cohesion force of the slurry resisting the force used for lifting the wafer from the plane of the polishing pad surface. The invention provides safe disengagement of the wafer with the polishing pad, and is especially useful for polishing apparatus employing vacuum retaining means for holding the wafer.

Abstract: Polishing pads are provided having a polishing surface formed from a hydrophilic material. The polishing surface has a topography produced by a thermoforming process. The topography consists of large and small features that facilitate the flow of polishing fluid and facilitate smoothing and planarizing.