Abstract: A method is provided for the fabrication of a porous polymeric material by electrophoretic deposition. The porous polymeric material is particularly well suited as a polishing surface for the planarization of semiconductor wafers.

Abstract: An apparatus and method for polishing the surface of a semiconductor wafer is provided in which the polishing pad has on its surface a multiplicity of nanoasperities which are particles having an imputed radius (of curvature) of about 0.5 to about 0.1 microns and sufficient resiliency to permanently deform by less than 10% which contact the wafer surface in combination with a reactive liquid solution.

Abstract: A dry particulate solids composition is provided which may be reconstituted into a chemical-mechanical polishing slurry.

Abstract: A polishing pad having a uniform, continuously interconnected porous surface. The pad is produced by pressure sintering powder compacts of thermoplastic polymer at a temperature above the glass transition temperature but not exceeding the melting point of the polymer. The sintering process is conducted at a pressure in excess of 100 psi and in a mold having the desired final pad dimensions. In a preferred version, a mixture of two polymer powders is used, where one polymer has a lower melting point than the other.

Abstract: A method is provided for polishing a composite comprised of silica and silicon nitride wherein a polishing composition is used comprising: an aqueous medium, abrasive particles, a surfactant, an organic polymer viscosity modifier which increases the viscosity of the composition, and a compound which complexes with the silica and silicon nitride wherein the complexing agent has two or more functional groups each having a dissociable proton, the functional groups being the same or different.

Abstract: This invention describes improved polishing pads useful in the manufacture of semiconductor devices or the like. The pads of the present invention have an advantageous hydrophilic polishing material and have an innovative surface topography and texture which generally improves predictability and polishing performance.

Abstract: An apparatus and method for polishing the surface of a semiconductor wafer is provided in which the polishing pad has on its surface a multiplicity of nanoasperities which are particles having an imputed radius (of curvature) of about 0.5 to about 0.1 microns and sufficient resiliency to permanently deform by less than 10% which contact the wafer surface in combination with a reactive liquid solution.

Abstract: An innovative method of manufacturing polishing pads using photo-curing polymers and photolithography. The photolithography enables the creation of useful surface patterns not possible with conventional machining techniques and enables the use of pad materials otherwise too soft to pattern by conventional machining techniques.

Abstract: A polishing pad is formed as a one-piece article having a region which is transparent and an adjacent region which is opaque. The article is formed by solidifying a flowable polymeric material which at least initially has a uniform composition. The flowable polymeric material is processed during a molding operation to provide the transparent region and the adjacent opaque region. Types of polymeric material suitable for making the polishing pad include a single thermoplastic material, a blend of thermoplastic materials, and a reactive thermosetting polymer.

Abstract: The present invention provides a chemical mechanical polishing method for the planarization of shallow trench isolation structure and other integrated circuit structures. The method of the invention comprises the steps of providing a substrate having a plurality of patterned regions and polishing the substrate with a chemical mechanical polishing slurry comprising small abrasive particles having a mean diameter of between about 2 and 30 nm and large abrasive particles having a mean diameter of between 2 and 10 times larger than the mean diameter of the small abrasive particles. The chemical mechanical polishing slurries can also include viscosity additives and etchants for use in the invention.

Abstract: A composition is provided for polishing a composite comprised of silica and silicon nitride comprising: an aqueous medium, abrasive particles, a surfactant, and a compound which complexes with the silica and silicon nitride wherein the complexing agent has two or more functional groups each having a dissociable proton, the functional groups being the same or different.

Abstract: A polishing pad having a substantially uniform, continuously interconnected porous surface. The pad can be produced by pressure sintering powder compacts of thermoplastic polymer at a temperature above the glass transition temperature but not exceeding the melting point of the polymer. The sintering process is conducted in a mold at a pressure in excess of 100 psi (0.07 MPa). In a preferred version, a mixture of two polymer powders is used, where one polymer has a lower melting point than the other.

Abstract: A polishing pad for polishing hard surfaces such as glass and silicon wafers and a method of polishing using such a polishing pad.

Abstract: The present invention provides a polishing pad fabricated from both polyester and polyether polyurethanes. Methods for manufacturing the pads and methods for use of the pads for polishing are also provided.

Abstract: Water based polishing slurries, comprising oxide polishing particles. The polishing slurries comprise an innovative (multi-modal) particle distribution for improved polishing performance.

Abstract: A method is provided for photochemical polishing of a silicon wafer using electromagnetic waves within the spectrum of 150 to 2000 nanometers wavelength. A photochemical polishing apparatus is also disclosed in which the electromagnetic waves are provided by a waveguide in close proximity to the surface of a silicon wafer electrode.

Abstract: A polishing pad is provided comprising an upper surface and a lower surface, substantially parallel to one another, wherein the pad has enhanced flexibility produced by scoring of either or both surfaces. The pad thickness is generally greater than 500.mu.. The scoring creates slits having a depth of less than 90% of the thickness.

Abstract: A fixed abrasive, chemical-mechanical polishing system which is particularly well suited for use in the manufacture of semiconductor devices, memory disks or the like.

Abstract: The present invention is directed to a refrigeration cabinet comprising an interior liner, a foam insulation derived from an HHC blowing agent and an outer wall. The interior liner comprises a styrene-based inner layer, an adhesive layer, and a barrier layer. The adhesive layer comprises an ethylene copolymer grafted with an anhydride or carboxylic acid moiety, and a styrene-based polymer or copolymer. The barrier layer comprises an ethylene vinyl alcohol copolymer.

Abstract: The present invention is directed to an improved cast film process for manufacturing amorphous film from a polymeric material, particularly a toughened polymeric material. The improvement is directed to a simple and efficient method for obtaining appropriate, controlled orientation of a film produced from a resin such as polyester, wherein the die gap and other factors affecting orientation are properly adjusted to provide a final amorphous film having reduced aging and "splitting" problems.