Abstract: A superconducting tape includes a substrate, a buffer layer overlying the substrate, a superconductor layer overlying the buffer layer, and an electroplated stabilizer layer overlying the superconductor layer. The tape provides for low AC losses, and is particularly suitable for deployment in components where attenuation of AC losses is important, such as in rotating machines.

Abstract: A receiver (300) includes a mixing digital-to-analog converter (DAC) (118A), a direct digital frequency synthesizer (DDFS) (132) and a dynamic element matching (DEM) circuit (304). A DAC of the mixing DAC (118A) is implemented as a segmented DAC having a thermometer encoded DAC section (120A) and a binary encoded DAC section (120B). The DDFS (132) includes outputs configured to provide bits associated with a digital LO signal to inputs of a switching section (124A, 124B) of the mixing DAC (118A). The DEM circuit (304) is coupled between the outputs of the DDFS (132) and the inputs of the switching section (124A) that are associated with the thermometer encoded DAC section (120A). The DEM circuit (304) is configured to scramble the bits provided to the thermometer encoded DAC section (120A).

Abstract: Various single crystals are disclosed including sapphire. The single crystals have desirable geometric properties, including a width not less than about 15 cm and the thickness is not less than about 0.5 cm. The single crystal may also have other features, such as a maximum thickness variation, and as-formed crystals may have a generally symmetrical neck portion, particularly related to the transition from the neck to the main body of the crystal. Methods and for forming such crystals and an apparatus for carrying out the methods are disclosed as well.

Abstract: A method of forming a superconductive device is provided, including providing a substrate having a dimension ratio of not less than about 102, depositing a buffer film to overlie the substrate by ion beam assisted deposition utilizing and ion beam, monitoring spatial ion beam density of the ion beam over a target area, and depositing a superconductor layer to overlie the buffer film. Monitoring may be carried out by utilizing an ion detector having an acceptance angle of not less than 10°.

Abstract: Precision dispense pumps comprise a housing that has an internal chamber disposed therein. A pressurizing assembly disposed within the chamber and includes a cylindrical pressurizing member having a head, a thin-walled skirt extending axially away from the head, and a flange is positioned circumferentially around the skirt. The pressurizing assembly includes a support coupled to backside of the pressurizing member. The support has a cylindrical outside surface sized support the skirt when it is translated from a chamber surface during pressurizing assembly axial movement. A shaft projects through an opening in the support and into a partial opening in the pressurizing member. A fluid transport body is attached to the housing and includes a fluid chamber having a fluid inlet port and a fluid outlet port. An actuator is disposed within an actuator housing attached to the housing and is coupled to the shaft to cause axial movement of the pressurizing assembly within the housing chamber.

Abstract: An article is provided that includes a substrate and a corrosion-resistant coating provided on the substrate. The substrate generally consists essentially of alumina, and the corrosion-resistant coating is provided so as to directly contact the substrate without the provision of intervening layers between the substrate and the corrosion-resistant coating, such as reaction products provided by high-temperature treatment processes. The corrosion-resistant coating generally consists essentially of a rare earth oxide, and has an adhesion strength not less than about 15 MPa. According to particular embodiments, the article is a ceramic component utilized and implemented in a semiconductor processing apparatus for processing semiconductor wafers.

Abstract: A single crystal spinel wafer is disclosed, including a front face and a back face; and an outer periphery having first and second flats. In certain embodiments, the single crystal wafer has a specific crystallographic orientation, and the flats are provided to extend along desired plane sets. The flats may advantageously identify orientation of cleavage planes, and direction of cleavage of cleavage planes.

Abstract: Aspects of the invention are found in a heating component having a composite material coated on a support. The composite material includes a fluorinated or silicone polymer and inductively-heatable particles. Additional aspects of the invention are found in a heating belt having a flexible support coated with a composite material. The composite material includes a polymer material and inductively-heatable particles. Further aspects of the invention are found in a system for heating an article. The system includes a heating belt and a field generator. The heating belt includes a flexible support coated in a composite material. The composite material includes a polymeric matrix and inductively-heatable particles. The field generator induces a field about the heating belt. The inductively-heatable particles heat in the presence of the field.

Abstract: A method for machining a ceramic substrate containing Al, including providing a slurry between a substrate and a machine tool, the slurry containing alumina abrasive and an additive including a phosphorus compound, and moving the substrate relative to the machine tool.

Abstract: A rail clamp circuit (100) includes first and second power supply voltage rails, a multiple independent gate field effect transistor (MIGFET) (128), and an ESD event detector circuit (138). The MIGFET (128) has a source/drain path coupled between the first (112) and second (114) power supply voltage rails, and first and second gates. The ESD event detector circuit (138) is coupled between the first (112) and second (114) power supply voltage rails, and has first and second output terminals respectively coupled to the first and second gates of the MIGFET. In response to an electrostatic discharge (ESD) event between the first (112) and second (114) power supply voltage rails, the ESD event detector circuit (138) provides a voltage to the second gate to lower an absolute threshold voltage of the MIGFET (128) while providing a voltage to the first gate above the absolute threshold voltage so lowered, thereby making the MIGFET (128) conductive with relatively high conductivity.

Abstract: Aspects of the invention are found in a multilayer film comprising a first polymer layer and a second polymer layer. The first polymer layer comprises a blend of a first fluoropolymer having a first average molecular weight and a second fluoropolymer having a second average molecular weight. The first average molecular weight is greater than the second average molecular weight.

Abstract: The disclosure is directed to an integrated glove including first and second substrate layers. The first substrate layer overlies the second substrate layer to define a volume therebetween configured to receive a wearer's hand. The integrated glove also includes first and second gas impermeable barrier layers respectively melt laminated to the first and second substrate layers. The first and second gas impermeable barrier layers extend beyond an outer contour of the first and second substrate layers and are melt laminated together to form a seam portion. The integrated glove has a breakthrough time greater than 60 minutes when exposed to NFPA 1991 industrial chemicals.

Abstract: Rare-earth-Ba-Cu-O superconductors having improved critical current density are described, as are methods of making same. These superconductors comprise a drop in Jc of less than a factor of about 7 at a temperature of between about 30K to about 77K, and at a magnetic field of about 1 Tesla, when the magnetic field is applied normal to the surface of the superconductor, as compared to a Jc in the presence of no magnetic field. These superconductors, when a magnetic field is applied perpendicular to the HTS surface have a peak Jc that is about 50-90%, and when a magnetic field is applied in any orientation with respect to the HTS surface have a Jc value that is at least about 50%, of the peak Jc that exists when the magnetic field is applied parallel to the surface of the superconductor.

Abstract: The disclosure is directed to a polymer film including a first layer and a second layer. The first layer includes a first fluoropolymer and has a melting point less than 135° C. The second layer overlies the first layer and includes a second fluoropolymer. The second layer has a melting point greater than 135° C.

Abstract: The disclosure is directed to a multilayer film including a first layer and a second layer. The first layer has a fluorinated polymer. The second layer has a melt strain-hardening component and forms no more than about 30% by volume of the multilayer film.

Abstract: A coupling includes a main body, a rotatable member, and a seal member. The main body has an internal passageway for fluid flow therethrough, and includes a first portion defining a first end of the coupling and includes a second portion defining a second end of the coupling and forming an abutment structure. The rotatable member encircles the main body along the second portion, and includes an engagement structure for engaging a complementary structure. The rotatable member has first and second opposite axial ends, and the seal member is disposed between at least one of the first and second opposite axial ends of the rotatable member and the main body.

Abstract: Methods and apparatus are provided for use in testing a memory (220, 230, 240) in a multiprocessor computer system (200). The multiprocessor computer system (200) has a plurality of processing nodes (210-217) coupled in an array wherein each processing node is coupled to at least one other processing node, and a memory (220, 230, 240) distributed among the plurality of processing nodes (210-217). A configuration of the array is determined. An initial configuration of the memory (220, 230, 240) is also determined. The memory (220, 230, 240) is tested over the array according to the initial configuration to identify a bad memory element. The initial configuration is modified to form a revised configuration that excludes the bad memory element.

Abstract: A wall section is disclosed for a trailer. The wall section comprises a male end and a female end. The male end includes a central recess having at least one protrusion on each side of the central recess, the protrusions defining respective lateral recesses. The female end includes a central protrusion having at least one lateral protrusion on each side of the central protrusion, the central protrusion and the lateral protrusions defining respective recesses.

Abstract: A method of forming a superconducting conductor is disclosed. The method provides translating a substrate tape through a deposition chamber and along a helical path, where the helical path has multiple windings of the substrate tape and each winding of the substrate tape extends along a feed path and a return path. The method further provides depositing a HTS layer overlying the substrate tape within a deposition chamber, wherein the deposition chamber houses the substrate tape along the feed path but not the return path.

Abstract: ESD safe ceramic component is provided which includes a sintered composition which is formed of a base material and a resistivity modifier. The base material includes a primary component and a secondary component, the primary component including Al2O3 and the secondary component including tetragonal-ZrO2.