Abstract: A design system for designing complex integrated circuits (ICs), a method of IC design and program product therefor. A layout unit receives a circuit description representing portions in a grid and glyph format. A checking unit checks grid and glyph portions of the design. An elaboration unit generates a target layout from the checked design. A data prep unit prepares the target layout for mask making. A pattern caching unit selectively replaces portions of the design with previously cached results for improved design efficiency.

Abstract: An integrated circuit (IC) chip, semiconductor wafer with IC chips in a number of die locations and a method of making the IC chips on the wafer. The IC chips have plated chip interconnect pads. Each plated pad includes a noble metal plated layer electroplated to a platable metal layer. The platable metal layer may be copper and the noble metal plated layer may be of gold, platinum, palladium, rhodium, ruthenium, osmium, iridium or indium.

Abstract: An Integrated Circuit (IC) chip that may be a bulk CMOS IC chip with silicon on insulator (SOI) Field Effect Transistors (FETs) and method of making the chip. The IC chip includes areas with pockets of buried insulator strata and FETs formed on the strata are SOI FETs. The SOI FETs may include Partially Depleted SOI (PD-SOI) FETs and Fully Depleted SOI (FD-SOI) FETs and the chip may include bulk FETs as well. The FETs are formed by contouring the surface of a wafer, conformally implanting oxygen to a uniform depth, and planarizing to remove the Buried OXide (BOX) in bulk FET regions.

Abstract: A high speed optical channel including an optical driver and a photodetector in a CMOS photoreceiver. The optical channel driver includes a FET driver circuit driving a passive element (e.g., an integrated loop inductor) and a vertical cavity surface emitting laser (VCSEL) diode. The VCSEL diode is biased by a bias supply. The integrated loop inductor may be integrated in CMOS technology and on the same IC chip as either/both of the FET driver and the VCSEL diode. The photodetector is in a semiconductor (silicon) layer that may be on an insulator layer, i.e., SOI. One or more ultrathin metal electrodes (<2000 ?) on the silicon layer forms a Schottky barrier diode junction which in turn forms a quantum well containing a two dimensional electron gas between the ultrathin metal electrode and the Schottky barrier diode junction.

Abstract: A high speed optical channel including an optical driver and a photodetector in a CMOS photoreceiver. The optical channel driver includes a FET driver circuit driving a passive element (e.g., an integrated loop inductor) and a vertical cavity surface emitting laser (VCSEL) diode. The VCSEL diode is biased by a bias supply. The integrated loop inductor may be integrated in CMOS technology and on the same IC chip as either/both of the FET driver and the VCSEL diode. The photodetector is in a semiconductor (silicon) layer that may be on an insulator layer, i.e., SOI. One or more ultrathin metal electrodes (<2000 ?) on the silicon layer forms a Schottky barrier diode junction which in turn forms a quantum well containing a two dimensional electron gas between the ultrathin metal electrode and the Schottky barrier diode junction.

Abstract: An integrated circuit (IC) design, method and program product for reducing IC design power consumption. The IC is organized in circuit rows. Circuit rows may include a low voltage island powered by a low voltage (Vddl) supply and a high voltage island powered by a high voltage (Vddh) supply. Circuit elements including cells, latches and macros are placed with high or low voltage islands to minimize IC power while maintaining overall performance. Level converters may be placed with high voltage circuit elements.

Abstract: A nonvolatile storage cell and an integrated circuit (IC) including the cells. A layered spacer (ONO) is formed at least at one sidewall of cell gates. Source/drain diffusions at each layered spacer underlap the adjacent gate. Charge may be stored at a layer (an imbedded nitride layer) in the layered spacer.

Abstract: A method of operating an integrated circuit including a pipeline and a method of stalling stages in the pipeline. Each stage of the pipeline is triggered by one or more triggering events and are individually, and selectively, stalled by a stall signal. For each stage a stall signal, delayed with respect to the stall signal of a downstream stage, is generated and used to select whether the pipeline stage in question is triggered. A data valid signal propagating with valid data adds further selection, such that only stages with valid data are stalled.

Abstract: A Local Clock Buffer (LCB), an IC chip including registers, some of which may include master/slave latches, locally clocked by the LCB, e.g., providing a launch clock and a capture clock each with an identified critical edge. The LCB includes asymmetrically inductively peaked series connected logic gates (e.g., inverters and/or NAND gates), each with an inductor between gate devices and supply (Vdd) or ground. The series connected gates alternate between having the inductor located between gate devices and the supply and located between gate devices and ground, providing asymmetric inductive peaking to maintain the sharpness of the critical edges. Optionally, corresponding logic gates in multiple LCBs may share the same inductor. Asymmetric inductive peaking allows reducing LCB power without degrading performance.

Abstract: A device temperature measurement circuit, an integrated circuit (IC) including a device temperature measurement circuit, a method of characterizing device temperature and a method of monitoring temperature. The circuit includes a constant current source and a clamping device. The clamping device selectively shunts current from the constant current source or allows the current to flow through a PN junction, which may be the body to source/drain junction of a field effect transistor (FET). Voltage measurements are taken directly from the PN junction. Junction temperature is determined from measured junction voltage.

Abstract: A test circuit and programmable voltage divider that may be used in the test circuit. The programmable voltage divider develops a voltage difference signal that may be digitally selected. The test circuit may be used to test and characterize sense amplifiers. The programmable voltage divider develops a signal with a selected polarity and magnitude that is provided to a sense amplifier being tested. The sense amplifier is set and its output latched. The latch contents are checked against an expected value. The difference voltage may be changed and the path retested to find passing and failing points.

Abstract: A storage subsystem such as an array of disk drives, method of managing disk drives in the storage subsystem and program product therefor. The storage subsystem may be a redundant array of independent disks (RAID) and the individual disks drives may be Self-Monitoring, Analysis and Reporting Technology (SMART) capable drives. When one of the drives gives an indication of an impending failure, a disk image of the failing disk is built on an available spare disk. Once the image is complete, the failing disk may be replaced without down time for rebuilding a failed disk.

Abstract: A multi-threshold integrated circuit (IC) that may be supplied by multiple supplies, with an array of latches such as an array static random access memory (SRAM) cells and a CMOS SRAM with improved stability and reduced subthreshold leakage. Selected devices (NFETs and/or PFETs) in array cells and support logic, e.g., in the data path and in non-critical logic, are tailored for lower gate and subthreshold leakage. Normal base FETs have a base threshold and tailored FETs have a threshold above. In a multi-supply chip, circuits with tailored FETs are powered by an increased supply voltage.

Abstract: A circuit for measuring timing uncertainty in a clocked digital path and in particular, the number of logic stages completed in any clock cycle. A local clock buffer receives a global clock and provides a complementary pair of local clocks. A first local (launch) clock is an input to a delay line, e.g., 3 clock cycles worth of series connected inverters. Delay line taps (inverter outputs) are inputs to a register that is clocked by the complementary clock pair to capture progression of the launch clock through the delay line and identify any variation (e.g., from jitter, VDD noise) in that progression. Global clock skew and across chip gate length variation can be measured by cross coupling launch clocks from a pair of such clock buffers and selectively passing the local and remote launch clocks to the respective delay lines.

Abstract: A multithreaded processor, fetch control for a multithreaded processor and a method of fetching in the multithreaded processor. Processor event and use (EU) signs are monitored for downstream pipeline conditions indicating pipeline execution thread states. Instruction cache fetches are skipped for any thread that is incapable of receiving fetched cache contents, e.g., because the thread is full or stalled. Also, consecutive fetches may be selected for the same thread, e.g., on a branch mis-predict. Thus, the processor avoids wasting power on unnecessary or place keeper fetches.

Abstract: A programmable, electrically alterable (EA) resistor, an integrated circuit (IC) chip including the EA resistor and integrated analog circuits using on-chip EA resistors. Phase change storage media form resistors (EA resistors) on an IC that may be formed in an array of parallel EA resistors to set variable circuit bias conditions for circuits on the IC and in particular, bias on-chip analog circuits. The bias resistance is changed by changing EA resistor phase. Parallel connection of the parallel EA resistors may be dynamically alterable, switching one or more parallel resistors in and out digitally.

Abstract: A semiconductor resistor, method of making the resistor and method of making an IC including resistors. Buried wells are formed in the silicon substrate of a silicon on insulator (SOI) wafer. At least one trench is formed in the buried wells. Resistors are formed along the sidewalls of the trench and, where multiple trenches form pillars, in the pillars between the trenches by doping the sidewalls with an angled implant. Resistor contacts are formed to the buried well at opposite ends of the trenches and pillars, if any.

Abstract: A web-based management interface, program product for displaying system configuration information and method of providing system or subsystem configuration information, e.g., for a storage subsystem. A web displayable file, e.g., hypertext mark up language (HTML), is generated and updated to reflect current configuration data for a storage subsystem configuration. The web page, when displayed, includes a generation snapshot that is compared against a current generation indicator that is associated with a current HTML file. If they match, the displayed web page is current; otherwise, an updated HTML file is downloaded and displayed.

Abstract: A method of forming integrated circuit (IC) chip shapes and a method and computer program product for converting an IC design to a mask, e.g., for standard cell design. Individual book/macro physical designs (layouts) are proximity corrected before unnesting and an outer proximity range is determined for each proximity corrected physical design. Shapes with a unique design (e.g., in boundary cells and unique instances of books) are tagged and the design is unnested. Only the unique shapes are proximity corrected in the unnested design, which may be used to make a mask for fabricating IC chips/wafers.

Abstract: A semiconductor structure that may be a discrete capacitor, a Silicon On Insulator (SOI) Integrated Circuit (IC) including circuits with discrete such capacitors and/or decoupled by such discrete capacitors and an on-chip decoupling capacitor (decap). One capacitor plate may be a well (N-well or P-well) in a silicon bulk layer or a thickened portion of a surface silicon layer. The other capacitor plate may be doped polysilicon and separated from the first capacitor plate by capacitor dielectric, e.g., CVD or thermal oxide. Contacts to each of the capacitor plates directly connect and extend from the respective plates, such that direct contact is available from both plates.