Abstract: A disposable belly protector of the present invention includes a front body and a rear body secured together along transversely opposite side edges thereof so as to form a tubular configuration and a pair of first elastic members secured along upper and lower openings of the tubular configuration and a pair of second elastic members secured to at least the front body between the first elastic members so as to extend between the transversely opposite side edges of the front body with a transversely symmetric arrangement which is only curved convexly toward the upper and lower openings, respectively. In another aspect of the present invention, a disposable diaper of pants type is seamlessly connected to the belly protector.

Abstract: In advanced digital networks for providing selective point-to-point communications between subscribers terminals and broadband server equipment operated by a plurality of independent information service providers, routing through the network is controlled by functionality identified as a Level 1 Gateway. The Level 1 Gateway will perform a variety of functions including communications port management of transmissions of information between subscribers and servers, processing of billing information and session management. The Level 1 Gateway generates menus of providers, either as a function of providers available through a particular portion of the network or in a customized fashion specified by individual subscribes. The Level 1 Gateway may also provide a PIN number functionality, e.g. to permit parents to limit which providers their children can access.

Abstract: Obtained is a semiconductor device which can effectively prevent a gate oxide film from deterioration or breaking caused by plasma charged particles which are accumulated in a wiring layer in plasma etching thereof, even if an antenna ratio is increased. In this semiconductor device, an impurity diffusion layer forming a resistor and a diode is interposed between a gate electrode layer of a field-effect transistor of an internal circuit other than an initial input stage circuit and a first wiring layer for transmitting a circuit signal to the gate electrode layer. Thus, plasma charged particles which are accumulated in the first wiring layer in plasma etching thereof are absorbed by the impurity diffusion layer, whereby no surge voltage is applied to the gate electrode layer which is connected with the first wiring layer. Thus, the gate oxide film which is positioned under the gate electrode layer is prevented from breaking or deterioration.

Abstract: The present invention provides a process for preparation of gasoline diesel and carbon black with waste rubber and waste plastics. The process comprises pyrolysis, purifying, catalytic cracking, and fractionation. The invention also relates to the catalyst used in the invention.

Abstract: The invention relates to a packing element, which can be used for packing and arranging one or more electric components of an appliance, depending on the case together with the same or similar packing elements; the packing element (1,3,4) has at least one current-conducting or light-conducting conducting track (10,11,12,17,18,43,44). Moreover, the invention relates to a device such as a Personal Computer in which this packing element is used.

Abstract: An anode basket containing anode particles used for electroplating a work piece. The anode basket includes baffles positioned inside the basket at selected locations. Hinges secure the baffles to opposing sidewalls of the basket and allow the baffles to pivot when sufficient manual force is applied to the respective hinges and/or baffle. The hinged baffles can be positioned to form separate compartments, enabling anode particles to be placed in different amounts at selected locations. If desired, some of the locations can have no anode particles. This permits more focused control of the metal ions.

Abstract: A surface of a transparent substrate is exposed at a first light transmission region Ta.sub.1, a semi-shield film is formed on the surface of the transparent substrate at a second light transmission region Ta.sub.2, a trench is formed at the surface of the transparent substrate at a third light transmission region Tn.sub.1, the semi-shield film and a phase shifter layer are layered on the surface of the transparent substrate at a fourth light transmission region Tn.sub.2, and the semi-shield film, the phase shifter layer and a shield film are layered on the surface of the transparent substrate at a shield region S. Thereby, hole patterns at a fine pitch can be precisely formed at a photoresist of a positive type by an exposure apparatus using a reduced number of a mask and having a simple structure.

Abstract: In a bipolar transistor of a type in which metal electrodes are formed in direct contact with a p-type external base region and an n-type collector region, respectively, an external base region surrounding an outer periphery of an n-type emitter region is formed. A metal electrode is formed on the emitter region with a polycrystalline silicon layer therebetween. Thereby, formation of a buried diffusion layer can be eliminated, and thus a manufacturing cost of the bipolar transistor can be reduced while achieving a high performance of the bipolar transistor.

Abstract: A method for producing a waveguide for an nonlinear optical device is disclosed. The organic nonlinear optical material 1 is composed of a polymer having the second order nonlinear optical dye moieties substituted for the side chains of the polymer, each end of the optical dye moieties being grafted to the polymer. The optical material 1 is rolled and drawn by rolling rolls 2a, 2b and drawing rolls 4a, 4b, whereby a polymer film 3 is continuously formed, in which the optical dye moieties are oriented in a predetermined direction. Then the resultant polymer films are laminated to be a polymer laminate in which the orientations of the dye moieties are alternately inverted. The polymer laminate is cut in a predetermined direction with a predetermined thickness into a waveguide having a periodic domain structure with a predetermined submicron period or odd number times thereof.

Abstract: A line filter includes a magnetic core having a leg. A bobbin is placed around the leg of the magnetic core. The bobbin has end collars provided with projections respectively. A pair of windings are provided on the bobbin. A molded casing made of resin houses the magnetic core, the bobbin, and the windings. The casing has movable tongues which engage the projections on the bobbin collars to fix the bobbin to the casing. The casing has inner surfaces formed with ribs which engage the magnetic core to fix the magnetic core to the casing. The casing has an L-shaped movable member extending from a ceiling thereof and engaging the magnetic core to fix the magnetic core to the casing.

Abstract: A recording and reproducing apparatus and method which prevents or manages a data loss caused by each of seek operations in recording/reproducing a time-series digital data set, to/from a disk recording media via a buffer. Before recording/reproducing, a check is made, by using a rate of data transfer with the outside, of a data transfer rate in an access to a track where each of the selected sectors lies, and of a seek time for each of changes in tracks, to see if the buffer will overflow/underflow during the period of recording/reproducing. If so, then an input/output data transfer rate is reduced before recording/reproducing to make the check. In case of recording, if there is at least a substitute for a sector which will cause the overflow, the sector is changed to a substitute.

Abstract: In a process for producing poly(phenylene sulfide), in which an alkali metal sulfide is reacted with a dihalo-aromatic compound in an organic amide solvent, the reaction is conducted through the following Steps 1 and 2, thereby efficiently providing granular, high-molecular weight poly(phenylene sulfide) having excellent whiteness in a short period of time and at a high yield. Step 1: a step comprising reacting the alkali metal sulfide with the dihalo-aromatic compound within a temperature range of 170.degree.-270.degree. C. in the organic amide solvent containing water in a proportion of 0.5-2.0 moles per mole of the alkali metal sulfide charged while raising the reaction temperature at an average heating rate of 0.1.degree.-1.degree. C./min in at least a temperature range of from 220.degree. C. to 240.degree. C.

Abstract: The present invention provides an improved Federated Naming Framework System which includes a Federated Naming Service Provider Interface ("FN SPI") for four (4) kinds of Name Services (Atomic Name, Compound Name, Partial Composite Name and Composite Name) along with a mechanism, designated the "FN Framework", which sits between the Client application and these Name Services and supports the translation and administration of calls for resolution of composite names to allow Client applications to make appropriate use of the available FN SPIs (there may be more than one FN SPI in any given system). The improved Federated Naming Framework System provides mechanisms to define and process strong and weak separation in the determination of naming system boundaries. Moreover, the present invention allows system implementors to install new naming services either statically or dynamically without disruption of the Client applications.

Abstract: In a complementary MOS field effect transistor having a dual gate electrode structure, which is improved so that an element property can be enhanced, a first gate electrode of an n channel MOSFET includes a first barrier film, and a second gate electrode of a p channel MOSFET includes a second barrier film. The first barrier film has a sufficiently small thickness so that a potential can be transmitted from a first conductive film to a first polycrystalline silicon film by means of a tunnel effect. The second barrier film has a sufficiently small thickness so that a potential can be transmitted from a second conductive film to a second silicon film by means of a tunnel effect.

Abstract: A primer composition comprises (A) an organosilicon compound of the general formula (1) ##STR1## wherein R represents an alkylene group having from 1 to 6 carbon atoms, R.sup.1 represents a divalent hydrocarbon group having not less than 4 carbon atoms, R.sup.2 's may be the same or different and independently represent an unsubstituted or substituted monovalent hydrocarbon group, a is 0 or 1, and b is 0, 1, 2 or 3, and (B) a catalyst for condensation of the organosilicon compound and (C) an organopolysiloxane resin.

Abstract: An epitaxial layer is formed on a semiconductor substrate, and a CMOS circuit or a functional device is formed on an impurity layer deeply extended to reach the semiconductor substrate and on an epitaxial layer region surrounded by the impurity layer. Thus the devices are substantially equivalent to those formed on a silicon substrate having no epitaxial layer. A CMOS circuit or functional device formed on an impurity layer that does not reach the semiconductor substrate and on the epitaxial layer region is made electrically independent of the semiconductor substrate, and hence can be deemed to be substantially equivalent to the case when the epitaxial layer is made to serve as a substrate.An epitaxial layer of a conductivity type reverse to that of a silicon substrate is used, and hence a plurality of functional devices can be formed respectively thereon at the same time.

Abstract: An FBT, its inductance adjusting method and a device capable of adjusting a gap between the top and bottom cores features a stable inductance value required for the FBT even without requiring a separate spacer between the top and bottom ferrite cores. An adhesive agent is applied to top end of a coupling portion of the bottom core provided within the low voltage bobbin, and a predetermined inductance value between the bottom core and the top core is obtained by a hardening of the adhesive agent therebetween without having a separate gap maintaining arrangement. The inductance value within the FBT can be precisely adjusted even without requiring a separate spacer at the gap portion between the top and bottom ferrite cores of FBT. In addition, it is not necessary to use a U-clip for fixing the top and bottom ferrite cores.

Abstract: A diaphragm for speakers comprises a self-support, shaped body including a tightly woven synthetic polymer fiber cloth substrate which has at least a diaphragm portion and edge portion shaped integrally with and extending from the diaphragm portion. The diaphragm portion of the cloth substrate had a polymer resin at least partially impregnated therein and the edge portion has a relatively flexible polymer material at least partially impregnated therein so that the edge portion is lower in stiffness than the diaphragm portion. The diaphragm-edge integral molding is fabricated by applying the respective types of polymers to the diaphragm and edge portions of the cloth substrate and subjecting the applied substrate to hot pressing in a mold capable of forming the integral molding. When applied as dynamic speakers, the integral molding exhibits a broad frequency band, low distortion rates and high sound quality.

Abstract: The present invention relates to methods of preventing or treating an infection or disease caused by an infectious agent. The present invention also relates to the augmentation of the efficacy of existing anti-infective agents by the co-administration of the compounds described herein.

Abstract: To improve the reliability, operating speed, size of equipment and economy, a disk coating system for forming a coating on a disk such as a compact disk is arranged to transfer disks to and from a pair of spinners with first and second disk transfer mechanisms. The coating system further has an intermittently rotating turntable, an apparatus for supplying a coating material to each disk on the turntable at a predetermined position, and a system for curing a coating layer on each disk. The spinners for removing an excess amount of the coating material are placed between the turntable and the curing system. The first transfer mechanism is for transferring disks from the turntable to the spinners, and the second transfer mechanism is for transferring disks from the spinners to the curing system. The two spinners are substantially equidistant from a predetermined disk position on the turntable. The first transfer mechanism has two arms extending in two directions diverging from a pivot at a predetermined angle.