Abstract: An attractive high-throughput technique for writing microcircuit patterns with a scanning electron spot of variable size is described in application Ser. No. 855,608, filed Nov. 29, 1977. In such an electron beam exposure system, two spaced-apart apertured mask plates with a deflector therebetween are included in the electron column of the system. As described herein, a third apertured mask plate and an associated deflector are serially added to the aforenoted components in the column. In this way, the throughput and other performance characteristics of such a system are significantly enhanced.

Abstract: By modifying the raster scanning mode of operation of an electron beam exposure system, it is practicable to directly define low-density features (100-102) in a relatively insensitive positive photoresist (10) that exhibits high resolution and good processing characteristics. As a result, it is feasible to utilize such a system as an adjunct in what is otherwise a photolithographic fabrication process to define certain critical features of a microminiature device.

Abstract: The thicknesses of the thin film components of a sample that comprises plural thin films deposited on top of each other on a substrate are simultaneously measured by an x-ray-fluorescence system. Incident x-rays excite x-ray fluorescence in the sample. Detection of the excited fluorescence is enhanced by a unique collimator assembly that is also adapted to enable direct monitoring of the intensity of the incident x-rays.

Abstract: In fabricating very-high-resolution devices with a lithographic tool such as an EBES machine, it is crucial that the planar mask or wafer members utilized therein be loaded into and maintained in the work chamber of the machine in a way that minimally affects their planarity. In accordance with the present invention this is accomplished by loading each member into a three-point-suspension cassette unit by means of a fixture that performs the loading in a precise and essentially stress-free manner.

Abstract: In an improved electron beam exposure system (EBES), a demagnified image of an array (28) of illuminated apertures is focused and scanned over the surface of a resist-coated workpiece (12). A deflection unit (30) is associated with the array of apertures to provide an independent blanking capability for each of the electron beams propagated through the aperture array. Such an EBES can be operated in a faster mode than a conventional system. In addition, the electron dose delivered to each address position on the resist coating (10) can be thereby selectively controlled. Other forms of charge particles may also be used.

Abstract: In one embodiment, a relatively thin layer of polysilicon is deposited on an underlying region to which spaced-apart electrical contacts are to be made through a subsequently formed relatively thick insulating layer. The polysilicon is selectively masked by a patterned silicon nitride layer in the regions where contact windows are to be formed. The unmasked polysilicon is then converted to a relatively thick insulating layer in an oxidizing step. Thereafter the silicon nitride portions are removed and the remaining polysilicon is utilized to provide conductive regions in the defined windows. In another embodiment, a relatively thick layer of polysilicon is selectively masked and partially converted to silicon dioxide to define both the insulating layer and the conductive regions. In still another embodiment, a relatively thin layer of polysilicon is patterned and then entirely converted to silicon dioxide to form an insulating layer having windows defined therein.

Abstract: The timing pattern of incoming pulses is modified by amplifying the pulses, selectively shifting the dc potential of the amplified pulses, and clipping or slicing the amplified pulses at a predetermined potential. The thus clipped or sliced output pulses have a predetermined timing pattern at a predetermined dc level,resulting in a time pattern correction of the incoming pulses.

Abstract: An electromechanical resonator, in the form of a single planar body, comprises a flexurally vibrating resonating element coupled at its midplane to a pair of torsionally vibrating couplers. Unwanted flexural modes in the resonator are substantially reduced by selecting a length-to-width ratio of the resonating element ranging between 3 and 4. A bandpass filter comprising a plurality of such electromechanical resonators may operate essentially free of spurious responses over a band of at least 200 kHz.

Abstract: A self-aligned technique for making metal-to-junction contacts in a shallow-junction large-scale-integrated device involves opening very small contact windows in the intermediate insulating layer of the device. These windows respectively overlie only limited central regions of the junctions. Impurities are then applied via the contact windows to provide deeper junction portions directly below the windows. As a result, metallic contact regions subsequently deposited in the windows are exactly aligned with respect to the deeper junction portions. Penetration or spiking of the junctions by the metallic regions is thereby significantly reduced.

Abstract: It is known to form an optical waveguiding thin film on a substrate. For various practical reasons, it is often desired that an optical beam coupled to the film be laterally confined so as to propagate only in a longitudinal stripe portion of the film. As disclosed herein, this is accomplished by depositing spaced-apart elements in contact with one surface of the film to establish in a narrow longitudinal region of the film between the elements an effective index of refraction that is higher than the index of the remainder of the film. In this way a longitudinal waveguiding stripe is formed on the film without the necessity of irradiating, etching or otherwise directly treating the film itself.

Abstract: An integrated high-power gallium arsenide field-effect-transistor device for operation in the gigahertz range comprises a multiple-gate structure. The device, which features gate cross-under fingers, is fabricated in microminiature form by directly processing a wafer using electron-beam lithographic techniques.

Abstract: A semiconductor read-only-memory (ROM) unit fabricated in large-scale-integrated form utilizing the formation of self-isolating bit-line surface regions of one conductivity type directly in a bulk region of the opposite conductivity type. Channel-stop regions of the same conductivity type as the bulk region are formed in the spaces between bit-line regions. Metallic word-lines overlying and orthogonal to the bit-line regions are formed, separated from the bit-line regions by an insulating layer. The memory cell comprises a single Schottky diode. Such a diode is made or not at each word-line/bit-line crossover location depending respectively on whether or not an aperture is formed in the insulating layer during fabrication to permit the word-line to contact a lightly doped portion of the bit-line. ROM units formed by this method are characterized by small area, high speed, low power dissipation and low cost.

Abstract: An apparatus for stabilizing microwave oscillator circuits is disclosed. The apparatus comprises a dielectric resonator positioned in the vicinity of a microwave semiconductive device for completing a feedback path between two electrode circuits of the device. A dielectric spacer is positioned between the resonator and the electrodes for supporting the resonator and controlling the magnitude of coupling between the two electrode circuits. A folded mechanical structure is described wherein the oscillating device and the resonator are located at the fold for improving the frequency stability of the oscillator. The microwave semiconductive device may be a bipolar transistor or a field effect transistor.

Abstract: An improved low-noise microwave amplifier comprises a circuit arrangement coupled in parallel with a GaAs FET amplifying stage for reducing transmission loss in case of dc power failure or amplifying stage failures. The circuit arrangement comprises two microwave circulators and a microwave isolator connected therebetween.

Abstract: For identification purposes, a network is added to a multiply configurable microminiature array. During fabrication of the array, the connection pattern of the network is established to be uniquely representative of the particular circuit then being formed in the array. In response to interrogation signals applied to the array, the network provides a unique pattern of voltages representative of the particular circuit. During actual operation of the array, the identification network is in effect automatically disconnected therefrom.

Abstract: An improved Range Extender with Gain (REG) comprises a floating loop current detector, a new dial pulse reshaper and a new control logic circuit. The loop current detector is powered by means of a floating power supply which renders the detector insensitive to spurious common-mode subscriber loop currents. The dial pulse reshaper comprises logic gates with two feedback paths for regenerating minimum make and break periods. The control logic circuit for controlling the relays in the REG is an asynchronous logic circuit particularly designed to avoid conventional differentiation circuits and timing problems associated with Automatic Number Identification.

Abstract: A method and an apparatus for cutting insulating material (e.g., quartz) having a conductive layer on the surface thereof includes the use of a thin copper wire having diamond particles imbedded therein. The wire is moved in a direction perpendicular to the surface of the material. A source of potential is coupled between the wire and the layer, and a liquid solution is supplied between the wire and the conductive layer resulting in electro-erosion of portions of the layer proximate to the wire. A tension sensor detects wire displacements at the quartz cutting site and controls a wire-to-layer gap detector which in turn interrupts the displacement of the insulating material.

Abstract: Very rapid and accurate linewidth measurements in selected subregions of an LSI mask or wafer are made by means of a low-cost apparatus. The apparatus embodies the recognition that an accurate linewidth determination can be made for any particular feature among a variety of features in a repeated array by a calibrated and normalized measurement of the average light transmission or reflection of a subregion that includes the feature. In turn, the measurement is automatically converted to a linewidth reading by analog computing circuitry.

Abstract: A tunable permanently fixed diffraction grating is interposed in the path of an optical beam propagated in an integrated-optics device. Tuning is accomplished, for example, by establishing a variable electric field in the propagating medium to control its refractive index. In that way the effective grating spacing is changed. As a result tunable optical filters and intensity modulators are thereby realized.

Abstract: Certain classes of patterns, for example so-called zone plates, are utilized as alignment marks in the fabrication of integrated circuits. Such a plate, which functions as a lens, provides a high-brightness image that is relatively insensitive to any degradation of the pattern.