Patents Represented by Attorney Mark J. Murphy
  • Patent number: 6023257
    Abstract: A driver circuit for driving an active matrix liquid crystal display without producing flicker. The inversion frequency of the voltage applied to the liquid crystal panel of the display is examined, the frequency being intrinsic to the display. The difference between voltages applied to opposite sides of the liquid crystal panel is found from the transmissivity of the liquid crystal material, by making use of an image sensor. The found value is converted into digital form by an analog-to-digital converter and stored in a correcting value storage device. When the active matrix display is in use, the difference signal which is found for each pixel and stored in the storage device is added to an image signal applied to the active matrix display, thus preventing flicker intrinsic to the liquid crystal panel.
    Type: Grant
    Filed: November 14, 1995
    Date of Patent: February 8, 2000
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Jun Koyama
  • Patent number: 5956008
    Abstract: A driver circuit for use with an active matrix display. The driver circuit has a shift register circuit of a redundant configuration and consists of a main circuit and a preliminary circuit. When the main circuit becomes defective, the operating circuit is automatically switched from the main circuit to the preliminary circuit without physically cutting the circuitry by a laser beam or the like. The driver circuit is composed of a main shift register circuit and a preliminary shift register circuit connected in parallel with the main shift register circuit. The output from the final stage of flip-flop circuit of the flip-flop circuits forming the main shift register circuit is compared with the output from a monitoring flip-flop circuit connected with the output of the final stage of flip-flop circuit. Thus, the output signals from the flip-flop circuits of the main shift register circuit are switched respectively to the output signals from the flip-flop circuits of the preliminary shift register circuit.
    Type: Grant
    Filed: September 5, 1995
    Date of Patent: September 21, 1999
    Assignee: Semiconductor Energy Laboratory Co.,
    Inventors: Yuji Kawasaki, Futoshi Ishii
  • Patent number: 5941967
    Abstract: In a multiprocessor system with shared resources, which several processors access via a system bus by presenting bus access requests to an arbitration unit and receiving from the latter access grant signals and in which the busy state of a resource or a conflict of consistency determine the generation of a RETRY signal and compel the processor, which has obtained access to the bus, to execute an access RETRY attempt, consecutive repeated access RETRY attempts of the same processor activate logic of the arbitration unit which temporarily mask, for a varying duration, the access requests of the same processor for the execution of further consecutive RETRY attempts, the varying duration first increasing as a function of the number of further RETRY attempts and then varying in a random manner.
    Type: Grant
    Filed: October 22, 1997
    Date of Patent: August 24, 1999
    Assignee: Bull HN Information Systems Italia S.p.A.
    Inventor: Ferruccio Zulian
  • Patent number: 5942356
    Abstract: A half tone type phase shift mask as well as a phase shift mask blank for the mask is formed with a thin film light translucent portion made of essentially, nitrogen, metal, and silicon. The containing rate of each element and ratio in the thin film is specified in a certain range to improve film characteristics, such as acid resistance, photo resistance, conductivity, refractive index rate (film thickness), light transmission rate, etching selectivity, etc. of the light translucent portion. The phase shift mask satisfies optical characteristics (i.e., light transmitting rate and phase shift amount) with high precision, as well as reduces defects in the thin film.
    Type: Grant
    Filed: March 27, 1997
    Date of Patent: August 24, 1999
    Assignee: Hoya Corporation
    Inventors: Masaru Mitsui, Kimihiro Okada, Hideki Suda
  • Patent number: 5920300
    Abstract: It is intended to increase the display speed in an active matrix liquid crystal display device. In displaying a moving picture, different voltages are applied in two steps to each pixel, i.e., each liquid crystal cell. More specifically, after a high voltage is applied first, and then a low voltage is applied at a prescribed timing, so that the rising characteristic of the liquid crystal is improved. In a specific configuration, thin-film transistors are provided on both sides of a pair of electrodes between which the liquid crystal is interposed. A voltage for accelerating the liquid crystal operation is applied from one of the two thin-film transistors, and the same voltage as in the case of displaying a still picture is applied from the other thin-film transistor.
    Type: Grant
    Filed: October 13, 1995
    Date of Patent: July 6, 1999
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Jun Koyama
  • Patent number: 5916656
    Abstract: A glass substrate manufacturing method advantageously applicable to magnetic recording disk glass substrates, LCD glass substrates, photomasks glass substrates, or optical memory glass substrates. The method includes the steps of forming a film of a solution on at least a principal surface of a sheet glass formed using a down-drawing method, the solution containing a water soluble inorganic material and a surface-active agent; sandwiching both sides of a single sheet glass on which the film is formed or of a laminated structure of two or more sheet glasses with a densified sheet with a high flatness to pressure the single glass or laminated structure; and heating and annealing the single sheet glass or laminated structure to flatten the same. The end side of the flatten glass substrate is treated with a treating solution containing a hydrofluosilicic acid.
    Type: Grant
    Filed: August 4, 1997
    Date of Patent: June 29, 1999
    Assignee: Hoya Corporation
    Inventors: Teruki Kitayama, Kazuhiko Sekiguchi, Teruhisa Fujita, Yoshio Murano, Sakuji Yoshihara, Tak Kojima
  • Patent number: 5902864
    Abstract: Process for the production of aromatic polyester resins starting from resins with an IV from 0.1 to 0.4 dl/g comprising the steps of blending the resin with a dianhydride of a tetracarboxylic acid, extruding the resin under the form of a strand, cooling the strand or the chips obtainable by cutting the strand, at a temperature between 150.degree. C. and 210.degree. C. and maintaining the same temperature for sufficient time to obtain a crystalline product wherein the DSC curves of the same do not show presence of premelt peaks or only in a negligible amount.
    Type: Grant
    Filed: July 15, 1997
    Date of Patent: May 11, 1999
    Assignee: Sinco Engineering S.p.A.
    Inventor: Hussain Al Ghatta
  • Patent number: 5903249
    Abstract: The object of the invention is to design for reduction of the effects of thin-film transistor OFF current and to improve image quality in an active matrix display device in which polysilicon thin-film transistors are used.Plural serially connected thin-film transistors are provided for one pixel electrode, different signals are imposed on the gate terminals of respective thin-film transistors, and a signal is written into the pixel when all the serially connected thin-film transistors are in an on state.Further, since the thin-film transistors are connected in series, the voltage imposed on the source and drain electrodes when they are all in an off state is divided, and consequently the voltage across the source and drain electrodes of the thin-film transistor that drives the pixel is smaller and the OFF current is reduced.
    Type: Grant
    Filed: October 2, 1995
    Date of Patent: May 11, 1999
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Jun Koyama, Yuji Kawasaki
  • Patent number: 5900161
    Abstract: For use with CVD apparatus, an apparatus and method for detecting the end point of a post treatment after an in-situ cleaning operation is provided such that reactive chemical species which remain after an in-situ cleaning operation can be accurately removed so that they do not cause harm to a film formed after the cleaning operation. The end point detection apparatus includes a reactor, an RF electrode, an RF power supply, a gas supply pipe for forming a thin film, a gas supply pipe for in-situ cleaning, a detector for detecting discharge characteristic values (i.e. the self-bias voltage, the electrode voltage, and the discharge impedance) during the post treatment performed after the in-situ cleaning, and a monitor/determining circuit for monitoring an output from the detector.
    Type: Grant
    Filed: November 27, 1996
    Date of Patent: May 4, 1999
    Assignee: Anelva Corporation
    Inventor: Satoshi Doi
  • Patent number: 5897923
    Abstract: A plasma treatment device for forming a high-quality thin film with fewer surface flaws and etching by preventing the generation of fine powders from deposited films in a film-forming chamber, by means of plasma treatment using gaseous starting materials. The plasma treatment chamber device includes a plasma generation chamber 11, a power-supplying mechanism for supplying power to this chamber, a film-forming chamber 113 to be spatially connected to the plasma generation chamber 11, a magnetic field generation mechanism 14 provided around this film-forming chamber for forming a multicusp magnetic field therein, an evacuation mechanism for evacuating the chamber, a first gas-supplying mechanism 16 for supplying gaseous starting materials and a second gas-supplying mechanism 17 for supplying gaseous materials for forming films. An inner wall surface 113b of the film-forming chamber is located in an area having a multicusp magnetic field with an intensity of from 50 to 200 G.
    Type: Grant
    Filed: September 29, 1995
    Date of Patent: April 27, 1999
    Assignee: Anelva Corporation
    Inventors: Takahiro Tamura, Junro Sakai
  • Patent number: 5869561
    Abstract: Articles from a polyester resin reinforced with glass fiber obtained by melt-shaping of the resin mixed with the glass fiber and a polyfunctional compound capable of increasing the intrinsic viscosity of the resin by addition reactions with the end groups of the rein using melt residence times during the shaping phase lower than 120 sec. and temperatures lower than 300.degree. C.
    Type: Grant
    Filed: October 8, 1997
    Date of Patent: February 9, 1999
    Assignee: Sinco Engineering S.p.A.
    Inventors: Hussain Ali Kashif Al Ghatta, Tonino Severini, Sandro Cobror
  • Patent number: 5866926
    Abstract: A memory suitable for integration having a memory structure where at least one capacitor formed by using a ferroelectric is integrated on a semiconductor device substrate. In a unit cell structure forming the memory, an upper electrode, located at an upper position among electrodes constituting the capacitor, is directly connected to a high density diffusion layer constituting a MOS transistor.
    Type: Grant
    Filed: July 19, 1993
    Date of Patent: February 2, 1999
    Assignee: Ramtron International Corporation
    Inventor: Kazuhiro Takenaka
  • Patent number: 5859180
    Abstract: Process for the solid state polycondensation of polyamide resins by the use in the polycondensation reactor of a quantity of an inert gas such that the ratio by weight between the solid capacity/h at the reactor outlet and that one of gas fed into the reactor is lower than 0.5.
    Type: Grant
    Filed: October 10, 1997
    Date of Patent: January 12, 1999
    Assignee: Sinco Engineering S.p.A.
    Inventors: Dario Giordano, Riccardo Bianchi
  • Patent number: 5852134
    Abstract: A process for the preparation of polymeric alloys from polyester resins and polymers containing groups capable of giving addition reaction with functional compounds containing at least two reactive groups comprising the melt state mixture stage of polyester resin, reactive polymer and functional compound of mixture pelletizing and following polyaddition reaction in the solid state at temperatures between 150.degree. and 220.degree. C. to obtain an increase of the polymer intrinsic viscosity of 0.1 dl/g in comparison with the starting polyester resin.
    Type: Grant
    Filed: December 5, 1996
    Date of Patent: December 22, 1998
    Assignee: Sinco Engineering S.p.A.
    Inventor: Hussain Ali Kashif Al Ghatta
  • Patent number: 5850362
    Abstract: A memory device according to the invention has a first pair of bit lines, having first and second bit lines, coupled to a first memory cell which cause a first potential difference between the first and second bit lines; a second pair of bit lines, having third and fourth bit lines, coupled to a second memory cell which causes a second potential difference between the third and fourth bit lines; a first sense amplifier having first and second transistors each of which is a first conductivity type, the gate electrode of said first transistor being connected to said first bit line, the first electrode of the first transistor being connected to the second bit line, the gate electrode of the second transistor being connected to the second bit line, the first electrode of the second transistor being connected to the first bit line; a second sense amplifier having third and fourth transistors each of which is the first conductivity type, the gate electrode of the third transistor being connected to the third bit li
    Type: Grant
    Filed: March 21, 1996
    Date of Patent: December 15, 1998
    Assignee: Oki Electric Industry Co., Ltd.
    Inventors: Shinzo Sakuma, Sampei Miyamoto
  • Patent number: 5849439
    Abstract: A light semitransmittable film of a half tone type phase shift mask blank is formed from a thin film comprising a material including oxygen, nitrogen, silicon and a metal as main constitutional components. In this case, the above-mentioned thin film is formed on a transparent substrate by a reactive sputtering process using a mixed target of molybdenum and silicon. At this time, a mixed gas of an inert gas and nitrous oxide is allowed to flow as an atmosphere gas, and the flow rate of the nitrous oxide gas is controlled within the range of 25 sccm or less to adjust the flow rate, whereby transmittance and film thickness can be controlled.
    Type: Grant
    Filed: December 26, 1996
    Date of Patent: December 15, 1998
    Assignee: Hoya Corporation
    Inventor: Masaru Mitsui
  • Patent number: 5848120
    Abstract: There is provided an X-ray mask blank from which an X-ray mask having a remarkably small positional deformation even at a large window size of 50 mm square and a remarkably positional precision can be manufactured. The X-mask blank has an X-ray transparent film on a substrate and an X-ray absorber film on the X-ray transparent film. A product of Young modulus and film thickness of the X-ray transparent film is 6.times.10.sup.8 to 3.times.10.sup.9 dyn/cm.
    Type: Grant
    Filed: September 4, 1997
    Date of Patent: December 8, 1998
    Assignee: Hoya Corporation
    Inventors: Tsutomu Shoki, Takamitsu Kawahara
  • Patent number: 5832931
    Abstract: A method for the imaging of a particular volume of plant or animal tissue, wherein the plant or animal tissue contains at least one photo-active molecular agent. The method includes the steps of treating the particular volume of the plant or animal tissue with light sufficient to promote a simultaneous two-photon excitation of the photo-active molecular agent contained in the particular volume of the plant or animal tissue, photo-activating at least one of the at least one photo-active molecular agent in the particular volume of the plant or animal tissue, thereby producing at least one photo-activated molecular agent, wherein the at least one photo-activated molecular agent emits energy, detecting the energy emitted by the at least one photo-activated molecular agent, and producing a detected energy signal which is characteristic of the particular volume of plant or animal tissue.
    Type: Grant
    Filed: October 30, 1996
    Date of Patent: November 10, 1998
    Assignee: Photogen, Inc.
    Inventors: Eric A. Wachter, Walter G. Fisher, H. Craig Dees
  • Patent number: 5830310
    Abstract: For use with CVD apparatus, an apparatus and method for detecting the end point of a post treatment after an in-situ cleaning operation is provided such that reactive chemical species which remain after an in-situ cleaning operation can be accurately removed so that they do not cause harm to a film formed after the cleaning operation. The end point detection apparatus includes a reactor, an RF electrode, an RF power supply, a gas supply pipe for forming a thin film, a gas supply pipe for in-situ cleaning, a detector for detecting discharge characteristic values (i.e. the self-bias voltage, the electrode voltage, and the discharge impedance) during the post treatment performed after the in-situ cleaning, and a monitor/determining circuit for monitoring an output from the detector.
    Type: Grant
    Filed: December 27, 1995
    Date of Patent: November 3, 1998
    Assignee: Anelva Corporation
    Inventor: Satoshi Doi
  • Patent number: D414582
    Type: Grant
    Filed: May 27, 1998
    Date of Patent: September 28, 1999
    Inventor: Hyeon-Bae Hwang