Abstract: A baseball-style cap having a crown portion made of multiple panels, a visor part which is attached to the front part of the crown portion and a headband attached to and extending around the lower inside edge of the crown portion. The headband is a band of two-ply elastic yarn material woven in a tubular or tunnel shape that contains no polyurethane. With this construction good perspiration absorbency is obtained without imposing undue elastic pressure on the wearer.

Abstract: Disclosed are an apparatus for forward beamforming using a terminal feedback and a method thereof. The base station estimates an angle of arrival (AOA) range of a user signal from reverse link received data and calculates a plurality of beamforming weights steering the estimated AOA range. Then, the base station transmits a user pilot signal by sequentially using the plurality of beamforming weights at different time areas through a control channel to estimate a forward channel conditions. A terminal calculates the user pilot signal power for all fingers at the respective time areas and feeds a time area number corresponding to the greatest power back to the base station. The base station transmits a data channel signal using a beamforming weight corresponding to the time area number fed back from the terminal.

Abstract: The present invention relates to a method for forming an inductor in a semiconductor device. The method comprises the steps of forming a first metal layer on a semiconductor substrate in which a predetermined structure is formed, and then patterning the first metal layer so that a predetermined region of the semiconductor substrate is exposed; forming a first copper layer on the entire resulting surface and then polishing the first copper layer; forming a second metal layer on the resulting surface including the polished first copper layer and then patterning the second metal layer so that predetermined regions of the first metal layer and the first copper layer are exposed; forming a second copper layer on the formed resulting surface; and polishing the resulting surface and stripping the first and second metal layers.

Abstract: The present invention relates to a method of manufacturing a semiconductor device. A barrier metal layer for blocking a metal material from being diffused into an insulating film is formed by means of an ALD method. At this time, the barrier metal layer is formed to have an amorphous structure and the barrier metal layer at the bottom of a contact hole or a via hole is selectively removed so that the barrier metal layer having good anti-diffusion properties even in a thin thickness is obtained. Therefore, it is possible to prevent resistance from increasing due to the barrier metal layer.

Abstract: The present invention provides a gate drive for protecting a switching element (IGBT) used for an electrical inertial load controller. A high-voltage IGBT is used as the switching element and an hcp1316j is used as the gate drive of the IGBT, to restrict overvoltage and overcurrent generated in the event of inverter switching, preventing destruction of the IGBT in advance. Furthermore, an RC filter is formed in close proximity to the IGBT to minimize an erroneous switching operation due to harmonics generated caused by noise in case of inverter switching to improve the system reliability and block an increase in abnormal voltage applied across the switching element.

Abstract: The invention relates to a fuel delivery unit (2) that is disposed in the fuel tank (1) of a motor vehicle, the delivery unit comprising a level sensor (13) that detects when the amount of fuel in a surge chamber (3) falls below a minimum amount. When the fuel in the surge chamber (3) falls below a defined minimum, the supply of power to a delivery pump (4) that is driven by an electromotor is interrupted, thereby preventing the delivery pump (4) from delivering air when the surge chamber (3) is empty.

Abstract: The present invention concerns antimicrobial compositions in particular compositions which affect Burkholderia cepacia, together with diagnostic test for same and uses of same.

Abstract: The present invention relates to a method for fabricating a semiconductor device with realizable advanced fine patterns.

Abstract: Disclosed in a method of forming a metal line in a semiconductor device. The method includes the steps of sequentially forming a first etch stop film, a second interlayer insulating film and a BARC film on a first interlayer insulating film into which a metal line is buried, forming a photoresist pattern defining a trench in a given region of the BARC film, performing an etch process up to the second interlayer insulating film using the photoresist pattern as an etch mask to form a trench, removing the photoresist pattern and the BARC film by means of a first wet etch process, etching the first etch stop film by means of a second wet etch process using the second interlayer insulating film an as etch mask, and cleaning the resulting entire surface by means of a third wet etch process.

Abstract: A fluid level (26) is measured through determining an inclination angle of a bracket (32) that rotatably connects a floating member (34) located near a surface of the fluid to a pivoting arrangement (28, 30) which carries a resistor (40) of which a first part is branched off through a slider (42) moving along with a change in the angle. In particular, the following steps are executed. First, connecting a stabilized power supply (U0) with its first terminal in series with a limiting resistor (RV) to one end of the resistor (40); second, measuring the voltages over both the first part (UF) and over a remainder part (UE) of the resistor. Finally, calculating the resistance value of the first part (RX) through eliminating a contact resistance value (RU, 46) associated with the slider from the measurement equations given by the values of the respective voltages (UF, UE).

Abstract: The present invention discloses a high frequency device including a first wafer providing an inductor having via contact plugs passing through the first wafer and a second wafer bonded to the first wafer, wherein the second wafer provides logic devices and inductor connection lines on an upper side thereof.

Abstract: An adaptive RAKE receiving apparatus is constrained with at least one constraint for use in a mobile communication system.

Abstract: The present invention relates to a method of forming a floating gate electrode of a flash memory device.

Abstract: A leadless plastic chip carrier is fabricated by partially etching at least a first surface of a leadframe strip to partially define a die attach pad, a plurality of contact pads disposed around the die attach pad, and a plurality of bond fingers intermediate the die attach pad and the contact pads. A metal strip is laminated to the first surface of the leadframe strip. A second surface of the leadframe strip is selectively etched such that portions of the leadframe strip are removed to define a remainder of the die attach pad, the plurality of contact pads, the plurality of bond fingers and circuitry between ones of the bond fingers and ones the contact pads. A semiconductor die is mounted to the die attach pad and wire bonds connect the semiconductor die to ones of the bond fingers. The second surface of the leadframe strip, the semiconductor die and the wire bonds are encapsulated in a molding material.

Abstract: The present invention relates to a jet injector system with a hand piece. The present invention generally comprises a power unit, a medicine unit, an energy unit, a supply bottle, and a hand piece. The hand piece and power unit may be separate components connected to each other by a high pressure hose, which gives the user more flexibility. A valve assembly having a ball lock assembly and a needle assembly controls the release of medication from the high pressure hose into the hand piece and out a nozzle into the subject.

Abstract: Ternary spreading codes in which side lobes near a peak of auth-correlation and cross-correlation are zero for a duration equal to or less than (0.75N+1) chips for a N chip period code are generated. The ternary spreading codes of the present invention is generated by (a) generating ternary zero correlation duration preferred pair codes, in which the zero correlation duration of (0.75N+1) chips is retained, by expanding a N chip period of a code, N being a natural number; and (b) generating a plurality of ternary zero correlation duration code sets having zero correlation characteristic equal to or less than (0.75N+1) chips by shifting the generated ternary zero correlation duration preferred pair codes in chips.

Abstract: Ampicillin is produced in a batch process by enzymatic acylation of 6-aminopenicillanic acid (6-APA) with the aid of phenylglycine derivative such as D-phenylglycine amide. High conversions of phenylglycine derivative may be achieved by having the total concentration in the reaction mixture of 6-APA and ampicillin greater than 250 mM and the molar ration of total quantity of phenylglycine derivative to total quantity of 6-APA less than 2.5. Higher yields of ampicillin may be achieved when the amount of dissolved 6-APA is kept low, e.g. below 300 mM.

Abstract: An impeller for a delivery pump in which profiled section (14) comprising webs (15) is located on the outer periphery of an impeller (4) for a feed pump (2) that is configured as a side channel pump. The webs (15) are arranged at an ascending incline, viewed in the rotational direction of the impeller (4) from the designated pressure side to the designated intake side. This permits flow losses between the radial external region of the impeller (4) and the housing parts (6, 7) of the feed pump (2) to be maintained at a particularly low level.

Abstract: The present invention relates to a semiconductor device and a method of manufacturing the same. The minimum marginal width of an impurity diffusion layer is defined to reduce by a given width. The reduced width of the impurity diffusion layer is compensated for through a silicon growth layer formed on the top of a device isolation film having a relatively higher degree of freedom than the bottom of the device isolation film. Thus, the degree of integration in the semiconductor device can be improved while keeping intact the minimum marginal width of the impurity diffusion layer.

Abstract: A locking fastener assembly having a threaded member with a slot, a threaded rotatable fastener having a flange, the flange having a periphery and including at least one aperture extending through the flange, wherein the threaded rotatable fastener is engageable with the threaded member. The flange on the nut further includes a notch along the periphery of the flange. The locking fastener assembly also contains a retainer having an outer margin defining a plurality of notches and a protruding member, wherein the protruding member is engageable with the slot on the threaded member. A locking pin is also provided, wherein the locking pin is engageable with at least one of the threaded apertures in the flange and at least one of the notches in the retainer. In a preferred embodiment, the locking pin is aligned with at least one notch in the retainer when the notch on the flange is aligned with at least one notch on the retainer.