Abstract: Disclosed herein is a locking guide of a locking device for a vehicle seat. The locking device comprises a lower rail, an upper rail coupled to the lower rail, a locking guide fixed to a bottom surface of the upper rail, a pair of lock members having a plurality of locking protrusions, a plurality of locking grooves engaged with the locking protrusions, and a lock spring. The locking guide is formed by pressing a plate member having a predetermined thickness.

Abstract: In a feed pump (2), guide vanes (9) fastened on a driven impeller (7) project into a recess (11) of a molding (8) annularly surrounding the impeller (7). The guide vanes (9) are located with a slight clearance opposite the wall of the recess (11). The guide vanes (9) can thereby have a particularly large surface. Moreover, a depositing of dirt in the radially outer region of the impeller (7) is avoided.

Abstract: A semiconductor memory device for an effective data access operation includes a cell area having N+1 number of unit cell blocks, each including M number of word lines, for storing a data in a unit cell corresponding to an inputted address; N+1 number of unit controlling blocks having respective state machines and corresponding to the respective N+1 unit cell blocks for controlling a data restoration that is accessed from a first unit cell block selected from the N+1 unit cell blocks into the first unit cell block or a second unit cell block; and a driving controlling block for controlling the N+1 unit cell blocks so that the N+1 unit controlling means are in one of first to fourth operation states.

Abstract: There is provided methods, kits, combinations, and compositions comprising a Aspergillus oryzae protease enzyme, a Bacillus subtilis protease enzyme, and a Aspergillus niger lipase enzyme for treating a digestive disorder in a subject in need thereof. The methods, kits, combinations, and compositions may also be used along with an agent (or combination of agents) for raising the gastric pH, a digestive enzyme useful in enhancing digestive activity, a dietary supplement, or a pharmaceutical agent.

Abstract: A method for iteratively decoding a block turbo code includes: receiving a signal frame formed of a product code obtained by serially concatenating block codes; forming a reliability array for signal demodulation and initializing extrinsic reliability information; performing a complexity-reduced soft decision output Viterbi decoding algorithm for all of the codewords existing on a current axis and calculating extrinsic reliability using soft decision output information output as a result of the decoding; checking whether an iterative decoding completion condition is satisfied, and outputting a decoded value and terminating an iterative decoding process when the condition is satisfied; and normalizing reliability information when the condition is not satisfied, performing reliability equalization, and repeating the decoding process for a next axis.

Abstract: The present invention relates to a method of manufacturing a semiconductor device.

Abstract: The present invention relates to a distributed arithmetic module employing a zero input detection circuit that reduces electric power consumption by avoiding unnecessary calculation. An apparatus for performing a discrete cosine transform (DCT) on a video signal, including; input unit for receiving the video signal in a block by block basis; discrete cosine transform (DCT) unit for receiving each image data block from the input unit and conducting a discrete cosine transform/inverse discrete cosine transform (DCT/IDCT) operation on the received image data block to generate a transformed image data block containing N×M pixel value; zero input detect unit for determining whether pixel values of a current image data block are all “0” and generating a detection signal in order to bypass the DCT/IDCT performing on the current image block; and output unit for outputting the transformed image data block as a transformed video signal.

Abstract: Interlocks for file cabinets that prevent more than one drawer from being opened at a given time include an elongated, flexible member, such as a cable, which is changeable from a high slack condition to a low slack condition when one of a number of associated drawers is opened. In the low slack condition, the interlocks prevent their associated drawers that are closed from being opened. In the high slack condition, which exists when the drawers are closed, the interlocks allow their associated drawers to be opened. The interlocks may be used in conjunction with a lock that selectively changes the cable from a high slack condition to a low slack condition and vice versa. The interlocks may be constructed to exert a force on the cable that is a small fraction of the pulling force exerted on a locked drawer.

Abstract: In a magnetically passive position sensor, a mechanical axis (11) and a magnetic axis (12) of a magnet (2) point toward the same contact spring element from two or more contact spring elements (5, 6). This results, in particular, in the end regions of the position sensor achieving a particularly high accuracy. The magnet (2) has a guide polygon (8) which is used to hold the magnet (2) in a holder (10) such that it cannot rotate.

Abstract: The present invention relates to a method for forming a contact in a semiconductor device. The method includes the steps of: forming a P-type source/drain junction in a substrate; forming an inter-layer insulation layer on the substrate; forming a contact hole exposing at least one portion of the P-type source/drain junction by etching the inter-layer insulation layer; forming a plug ion implantation region by implanting boron fluoride ions into the exposed portion of the P-type source/drain junction, the boron fluoride ion having the less bonding number of fluorine than 49BF2; performing an activation annealing process for activating dopants implanted into the plug ion implantation region; and forming a contact connected to the P-type source/drain junction through the contact hole.

Abstract: The present invention is provided to manufacture a semiconductor device capable of preventing loss of dopants due to external diffusion thereof from a junction area by forming a cobalt mono-silicide film through a first RTP process, implanting ions not serving as a donor or an acceptor with a low energy and a low dose to make the film amorphous, and then forming a cobalt silicide film through a second RTP process.

Abstract: The invention relates to a curable resin composition, cured products thereof, and laminated materials. The curable composition comprises: (A-1) acicular oxide particles, the oxide being an oxide of at least one element selected from the group consisting of silicon, aluminum, zirconium, titanium, zinc, germanium, indium, tin, antimony, and cerium, (B) a compound having two or more polymerizable unsaturated groups, (C) a photopolymerization initiator is provided. After cure, the composition has excellent scratch resistance. In addition, it may have excellent antistatic characteristics and transparency. In a preferred embodiment the composition also comprises (A-2) particles other than the acicular particles (A-1), being oxide of at least one element selected from the group consisting of silicon, aluminum, zirconium, titanium, zinc, germanium, indium, tin, antimony, and cerium.

Abstract: Disclosed is a method and apparatus of a code read only memory (ROM) data capable of protecting code ROM data is easily read and plagiarized in field in case of testing a code ROM built-in a microcontrol unit (MCU) The apparatus for protecting data outputted from a code ROM has: a first encryptor for encrypting data outputted from the code ROM; a second encryptor for generating a read enable signal through an encryption process; and an output unit for dumping out the encrypted data outputted from the first encryptor in response to the read enable signal outputted from the second encryptor.

Abstract: Provided is a display panel comprised of a white color organic luminescent element and a color filter for full color implementation, wherein a substrate in which an organic luminescent element is formed and a color filter are assembled and fixed to face each other with an adhesive pattern therebetween, and liquid oil is filled between the color filter and the substrate inside of the adhesive pattern so as to block external moisture or oxygen, so that deterioration of luminous characteristics due to the external moisture or oxygen may be prevented by encapsulating the organic luminescent element and the color filter with the liquid oil, which leads to enhance reliability and stability of the element, and also allows the encapsulation process to be performed with relatively simple steps and low cost.

Abstract: Provided are a field effect transistor and a method of fabricating the same, wherein the field effect transistor is formed which has a hyperfine channel length by employing a technique for forming a sidewall spacer and adjusting the deposition thickness of a thin film. In the field effect transistor of the present invention, a source junction and a drain junction are thin, and the overlap between the source and the gate and between the drain and the gate is prevented, thereby lowering parasitic resistance. Further, the gate electric field is easily introduced to the drain extending region, so that the carrier concentration is effectively controlled in the channel at the drain. Also, the drain extending region is formed to be thinner than the source, so that the short channel characteristic is excellent.

Abstract: The present invention discloses a radio frequency integrated circuit and a method for manufacturing the same. The radio frequency integrated circuit is manufactured by forming an inductor and a passivation layer on an insulator substrate of a first substrate, forming an element layer having a multi-layer wiring structure on a semiconductor substrate, an inductor coupling line formed on the top portion of the element layer, first and second via contact plugs formed on the inductor coupling line, and an input/output pad coupled to the second via contact plug on a second substrate, and bonding the first substrate onto the second substrate, so that the inductor of the first substrate can be coupled to the first via contact plug of the second substrate. As a result, the radio frequency integrated circuit includes the inductor having a high Q value, by forming the inductor sufficiently separately from the semiconductor substrate on which the elements have been formed.

Abstract: A semiconductor memory device includes: a memory core area; a plurality of address input pads for transferring addresses; a first address buffer part for receiving the addresses and outputting first addresses; a plurality of multi I/O pads for inputting/outputting data or inputting/outputting addresses/data while multiplexing the addresses/data; a data I/O buffer part for receiving data from the plurality of multi I/O pads and transferring the data to the memory core area or receiving and outputting addresses; a second address buffer part for receiving the addresses from the data I/O buffer part and outputting second addresses; an address multiplexer part for combining the first addresses and the second addresses and outputting data access addresses to the memory core area; and a path control part for controlling the address multiplexer part.

Abstract: A semiconductor memory device having a plurality of banks for stably performing a write with auto-precharge (WRA) command or a read with auto-precharge (RDA) command, including: a bank signal generation unit for generating an interrupt bank signal based on a bank address signal and a column address strobe (CAS) signal; a data access period detection unit for generating a data access period signal based on the CAS signal and a bit line disable signal; and a masking signal generation unit for generating a masking signal in order to controlling a logic level of an auto-precharge signal based on the data access period signal and the interrupt bank signal.

Abstract: The present invention relates to a gate structure of a flash memory cell and method of forming the same, and method of forming a dielectric film.