Abstract: A method of repairing opaque defects in lithography masks entails focused ion beam milling in at least two steps. The first step uses a large pixel spacing to form multiple holes in the defect material, with the milled area extending short of the defect material edge. The final step uses a pixel spacing sufficiently close to produce a smooth floor on the milled area, and extends to the edge of the defect. During the second step, an etch enhancing gas such as bromine is preferably used.

Abstract: The present invention comprises a method and apparatus for prioritizing the implementation of resolution-enhancing mask corrections such as scattering bars on lithography tools. Prioritizing conflicting resolution-enhancing mask corrections produces a lithography tool having improved fidelity because corrections that provide the most beneficial effects can be implemented at the expense of corrections that provide less benefit. In a preferred embodiment, the prioritization is based on the geometry of the conflicting correction. For example, assist features that are closer to their respective generating edge may be assigned higher priorities, and assist features generated from orthogonal edges may be assigned higher priorities than features generated from angled edges.

Abstract: An electron source for, for example, an electron microscope cannot exhibit a high brightness and a large beam current at the same time, because the virtual emitter dimension is enlarged by Coulomb repulsion in the electron beam in the case of a large beam current, thus reducing the brightness. In a conventional electron source switching-over could take place from a high brightness to a large beam current by varying the dimension of a beam-limiting diaphragm; however, this is objectionable because the location of such a diaphragm is not readily accessible. In accordance with the invention said switching-over can take place by arranging two lenses 26, 28 in the source, which lenses parallelize In the described circumstances the beam either directly behind the emitter 4 (large current) or directly in front of the diaphragm aperture 32 (high brightness).

Abstract: In the production of semiconductors it is necessary to inspect circuit patterns on wafers. In circuits having very small details (for example, 40 nm), inspection can be carried out by means of electron beam columns, a plurality of wafers then being inspected at the same time and the signals being compared on-line. In an inspection apparatus in accordance with the invention more beam columns 1 to 7 are provided for every wafer A, B, C in order to obtain a high feed-through rate. The inspection is carried out by way of an x-y scan and the wafers are fed through according to a rectilinear movement, thus providing the possibility of scanning only the Care Area Fraction of the wafers, resulting in a high feed-through rate for the wafers in the inspection apparatus.

Abstract: An electron source provides electrons that are directed through the final lens of an ion optical column to neutralize at least a portion of the accumulated charge on a sample. The invention can optionally be combined with collection of secondary electrons through the final ion lens. A deflector directs the neutralizing electrons onto the ion beam optical axis and deflects the secondary electrons away from the optical axis for detection. For imaging, a high-pass energy filter separates secondary electrons generated from the neutralizing electron beam from secondary electrons generated by the ion beam.

Abstract: A electron emission cathode includes an emitter having an apex from which electrons are emitted. The emitter is attached to a heating filament at a junction and extends from the junction both forward toward the apex and rearward. A reservoir of material that lowers the work function of the emitter is positioned on the rearward extending portion of the emitter. By positioning the reservoir on the rearward extending portion, the reservoir can be positioned sufficiently far from the junction to reduce its temperature and thereby greatly increase the useful life, of the emitter without adversely affected the emission characteristics of the source.

Abstract: The present invention provides a column tilt apparatus and method for providing an off-normal angle of incidence of a beam in a scanned beam system onto a substrate passing through the eucentric point that is electro-mechanically adjustable during operation while maintaining vacuum integrity of the column and work chamber, and without introducing significant vibrations.

Abstract: Samples such as semiconductor wafers may be subjected to an elementary analysis by irradiation by means of electrons and measurement of the X-rays 30 generated in the sample. In order to achieve a high spatial resolution, two adjacent holes 6, 8 are formed in the sample surface, leaving a very thin separating wall 10 between said holes and hence limiting the dimension of the interaction volume 24. However, electrons pass through the wall, thus generating disturbing X-rays in the walls of the hole 8 behind the wall. According to the invention the hole 8 behind the separating wall 10 is provided with a stopping material 12 of an elementary composition which deviates from that of the wall 10. If the wall to be analyzed contains silicon, the stopping material 12 should preferably be platinum or carbon.

Abstract: A charged particle beam uniformly removes material, particularly crystalline material, from an area of a target by compensating for or altering the crystal orientation or structure of the material to be removed. The invention is particularly suited for FIB micromachining of copper-based crystalline structures. Uniformity of material removal can be improved, for example, by passing incoming ions through a sacrificial layer formed on the surface of the material to be removed. The sacrificial layer is removed along with the material being milled. Uniformity of removal can also be improved by changing the morphology of the material to be removed, for example, by disrupting its crystal structure or by altering its topography.

Abstract: An electron analyzer and its method of operation useful for determining the intensity of a peak in the electron spectrum. The invention is particularly useful for determining the intensity of an Auger peak of a given element in the sample being probed and associating the intensity with a concentration of that element in the sample. The electron spectrum is measured above and below the anticipated peak. The data near the peak are not used. The remaining data above the peak and below the peak are fit to respective equations linearly dependent upon the measurement energy. The difference of the two equations at the value of the peak energy is associated with the peak intensity and the elemental concentration. The invention can be applied to measuring nitrogen concentration in a thin protective film of amorphous carbon or diamond.

Abstract: An electrostatic manipulating apparatus for handling a sample (1) during and after removal from semiconductor wafers (3) under a continuous vacuum, comprising a fork (7) of at least two electrically conductive elements (10) capable of exerting an electrostatic force on said sample. Preferably all electrically conductive elements are covered by a thin coating of insulating material for improved contact and release.

Abstract: The present invention comprises a method and apparatus for classifying edges for implementing mask corrections. In one embodiment, classifications are based upon proximity ranges bounded on one side only. Before classifying an edge in a first class based on a first proximity range, it is verified that the classification will produce a correction satisfying a minimum manufacturable length. If the prescribed correction for the first class does produce a correction satisfying the minimum manufacturable length, the edge is classified in a second class corresponding to a second proximity range to produce, in combination with an adjacent edge also in the second class, a manufacturable correction. The number of mask corrections implemented in a mask design is thus increased while ensuring that all mask corrections meet guidelines for manufacturability and reducing required clean-up of nonmanufacturable corrections in the design.

Abstract: Objects such as semiconductor wafers to be studied in a scanning electron microscope (SEM) are subject to vibrations which are intensified by vibration resonance of the (thin) wafer, so that the resolution of the SEM is severely degraded. In prior art it is known to support the wafer by means of elastic support members. However, such support members do not counteract the detrimental vibrations. According to the invention there are provided elastic support elements 28 that can accommodate to the inevitable shape errors of the wafer 18 and hence remain in contact with the wafer surface 32. Moreover, the support elements are embodied in such a manner that frictional contact exists between the moving part 38 of the support element and the body 34 of the object carrier 20. The support elements thus provide support which is elastic for macroscopic support but hard for the vibrational movements in the nanometer range, thus inhibiting such vibrational movements.

Abstract: Multi-beam lithography apparatus is used for writing patterns on a substrate 14 such as a wafer for ICs. The patterns may have details of various dimensions. In order to enhance the production rate, it is attractive to write fine details with a small spot 16 and large details with a large spot. It is known to vary the spot size by varying the emissive surface of the electron source. In accordance with the invention the spot size is varied by varying the size 22 of the beam limiting aperture 20, thus enabling optimization of the beam current in dependence on the spot size. A preferred embodiment is provided with an additional (condenser) lens 24 such that the object distance remains constant when the magnification of the lens system 18, 24 is varied.

Abstract: This invention relates to a multi-layer lithographically fabricated device used to produce improved thin-film recording heads. It further relates to a focused particle beam system for milling a recording head pole-tip assembly without irradiating a sensitive structure, e.g. a read head, of the recording head. The invention precisely forms a pole-tip assembly by milling a second structural element without irradiating a first structural element. The invention avoids irradiating the first structural element by placing a first marker element, which can be imaged and/or damaged, in the same layer of a multi-layer lithographically fabricated device as the first structural element. The marker element has a fixed spatial relationship to the first structural element.

Abstract: A system and method for providing correlation of HDL signal names in the structural gate level description. In one embodiment, an HDL behavioral description of a circuit is processed by a correlation compiler to identify intermediate signals. The behavioral description is modified to specify that the intermediate signals are primary outputs of the circuit. The modified behavioral description is then processed by a synthesis tool to generate a structural description corresponding to the modified behavioral description. The structural description includes as outputs the identified intermediate signals.

Abstract: A probe tip manufactured from a conically shaped quartz tip etched to a fine apex. The quartz tip is coated with about 1 &mgr;m of a hard material such as silicon nitride. A probe tip having dimensions of about 100 nm×1 &mgr;m is then machined from the hard material adjacent to the apex of the quartz tip along the axis of the quartz tip. The machining is preferably performed by focused ion beam milling.

Abstract: An electron energy analyzer integrated with a low-pass energy filter. The electron energy analyzer includes a separation region disposed inside a coil creating a magnetic field parallel to an axis of the separation region. The magnetic field is terminated at both ends of the separation region and shunted by a magnetic yoke around the outside of the coil. Electrons entering the separation region at a polar angle with respect to the axis accumulate an azimuthal angle dependent on the energy of the electron. Thereby, the direction the electron is traveling when it exits the separation angle depends upon its energy. According to the invention, a low-pass reflector is positioned at the input side of the analyzer, for example, a grounded grid in back of which is positioned a negatively biased absorption electrode. Electrons having energy exceeding the electrode bias are absorbed. Electrons having energy less than the electrode bias are reflected and exit the reflector with the same energy as before.

Abstract: Particle beam systems and methods for interacting with a workpiece according to this invention include a work stage assembly and a first particle beam source. The work stage assembly is adapted a) for supporting a workpiece, b) for translating along a first axis, c) for translating along a second axis perpendicular to the first axis, and d) for rotating about a third axis perpendicular to both the first axis and the second axis. The work stage assembly has a work stage axis substantially parallel to the third axis. The first particle beam source for interacting with the workpiece is supported by the work stage assembly. The first particle beam source has a first particle beam axis. In one embodiment, the first particle beam source is oriented so that the first particle beam axis forms an angle with the third axis.

Abstract: A system and method for providing encapsulation of HDL descriptions at the processes level includes a computer which accesses an Process Encapsulation computer program stored in computer memory. A computer processor which is electrically connected to the computer memory executes the Process Encapsulation computer program to encapsulate HDL processes as independent HDL objects within the structure of an HDL behavioral description.