Abstract: Improved beacon signaling methods are described. Beacon signals are transmitted on the same tone in at least two consecutive symbol periods facilitating accurate energy measurements over a symbol period even if timing synchronization with the transmitter is not maintained. A low power wideband signal is also combined with the beacon signal to facilitate channel estimation and other operations such as timing synchronization operations.
Type:
Grant
Filed:
October 14, 2005
Date of Patent:
May 10, 2011
Assignee:
QUALCOMM Incorporated
Inventors:
Rajiv Laroia, Vladimir Parizhsky, Junyi Li, Sathyadev Venkata Uppala
Abstract: A multi-tiered IC device contains a first die including a substrate with a first and second set of vias. The first set of vias extends from one side of the substrate, and the second set of vias extend from an opposite side of the substrate. Both sets of vias are coupled together. The first set of vias are physically smaller than the second set of vias. The first set of vias are produced prior to circuitry on the die, and the second set of vias are produced after circuitry on the die. A second die having a set of interconnects is stacked relative to the first die in which the interconnects couple to the first set of vias.
Abstract: A tool to measure the depth of one or more through-silicon vias, the tool fabricated in silicon to include a microfluidic chamber that is positioned over the one or more through-silicon vias, further including a fluid actuation chamber to inject fluid into the microfluidic chamber and into the one or more through-silicon vias, and a pressure sensing chamber to sense the fluid pressure to indicate when the one or more through-silicon vias are filled with the fluid.
Abstract: A method increases stability of a memory circuit by pre-charging at least one bit line of the memory circuit to a first voltage, pre-charging at least one other bit line of the memory circuit to a second voltage, and equalizing charge across the bit lines so that the bit lines are pre-charged with a third voltage.
Abstract: Systems and methods of controlled value reference signals of resistance based memory circuits are disclosed. In a particular embodiment, a circuit device is disclosed that includes a first input configured to receive a reference control signal. The circuit device also includes an output responsive to the first input to selectively provide a controlled value reference voltage to a sense amplifier coupled to a resistance based memory cell.
Type:
Grant
Filed:
June 30, 2008
Date of Patent:
October 12, 2010
Assignee:
QUALCOMM Incorporated
Inventors:
Seong-Ook Jung, Jisu Kim, Jee-Hwan Song, Seung H. Kang, Sei Seung Yoon