Abstract: The present invention is directed to a dual fuel system and a dual fuel system assembly where liquid LPG and diesel are mixed and then distributed via the common rail to the combustion chambers. The liquid fuel mixture remains in a liquid state and under pressure for introduction to the combustion chambers. With the preferred embodiment of the dual fuel system, only minor changes are required to the diesel engine without altering the manufactures specifications and voiding the manufacturer's warranties. The resultant combustion of the liquid fuel mixture provides a cleaner emission and relatively cheaper vehicle operational costs.

Abstract: Implantable drug infusion devices, systems and methods for delivering therapeutic substance to a subject that include a bulkhead and an attached reservoir formed by an elastic bladder are disclosed. When filled with therapeutic substance, the elastic bladder is elastically expanded such that the therapeutic substance is held at a pressure above ambient pressure. As the therapeutic substance is removed from the reservoir, the bladder collapses and may conform to the shape of the bulkhead surface over which it is located.

Abstract: The present invention is a novel block copolymer containing a controlled distribution copolymer block of a conjugated diene and a mono alkenyl arene, where the controlled distribution copolymer block has terminal regions that are rich in conjugated diene units and a center region that is rich in mono alkenyl arene units. Also disclosed is a method for manufacture of the block copolymer.

Abstract: Kits and methods for submucosal endoscopic access into body cavities such as the peritoneal cavity and the posterior mediastinum through a submucosal endoscopic procedure in which an opening is formed through the muscularis propria within a bleb. The procedure may result in a mucosal flap formed by separated mucosal tissue within the bleb and the mucosal flap may be advantageously used to assist in closure of the opening.

Abstract: Memory units that have a magnetic tunnel junction cell that utilizes spin torque and a current induced magnetic field to assist in the switching of the magnetization orientation of the free layer of the magnetic tunnel junction cell. The memory unit includes a spin torque current source for passing a current through the magnetic tunnel junction cell, the spin torque current source having a direction perpendicular to the magnetization orientations, and also includes a magnetic ampere field current source is oriented in a direction orthogonal or at some angles to the magnetization orientations.

Abstract: An apparatus includes at least one memory device including a floating gate element and a magnetic field generator that operably applies a magnetic field to the memory device. The magnetic field directs electrons in the memory device into the floating gate element.

Abstract: A magnetic stack having a ferromagnetic free layer, a metal oxide layer that is antiferromagnetic at a first temperature and non-magnetic at a second temperature higher than the first temperature, a ferromagnetic pinned reference layer, and a non-magnetic spacer layer between the free layer and the reference layer. During a writing process, the metal oxide layer is non-magnetic. For magnetic memory cells, such as magnetic tunnel junction cells, the metal oxide layer provides reduced switching currents.

Abstract: Spin torque magnetic memory elements that have a pinned layer, two free layers, and a current-blocking insulating layer proximate to at least one of the free layers. The resistive state (e.g., low resistance or high resistance) of the memory elements is altered by passing electric current through the element in one direction. In other words, to change from a low resistance to a high resistance, the direction of electric current is the same as to change from a high resistance to a low resistance. The elements have a unidirectional write scheme.

Abstract: Garments designed to be worn in conjunction with conventional chaps to protect the lower abdomen of the wearer and upper legs of a wearer are described herein. Also described are garments that replace conventional chaps.

Abstract: A resistive sense memory apparatus includes a first semiconductor transistor having a first contact electrically connected to a first source line and a second contact electrically connected to a first resistive sense memory element and a second semiconductor transistor having a first contact electrically connected to a second source line and a second contact electrically connected to a second resistive sense memory element. A bit line is electrically connected to the first resistive sense memory element and the second resistive sense memory element.

Abstract: A magnetic tunnel junction having a compsensation element is disclosed. The magnetic tunnel junction includes a reference element, and a compensation element having an opposite magnetization moment to a magnetization moment of the reference element. A free magnetic layer is between the reference element and the compensation element, and an electrically insulating and non-magnetic tunneling barrier layer separates the free magnetic layer from the reference element. The free magnetic layer includes Co100-X-YFeXBY wherein X is a value being greater than 30 and Y is a value being greater than 15.

Abstract: Resistive memory calibration for self-reference read methods are described. One method of self-reference reading a resistive memory unit includes setting a plurality of resistive memory units to a first resistive data state. The resistive memory units forms a memory array. Reading a sensed resistive data state for each resistive memory unit by applying a first read current and a second read current through each resistive memory unit and then comparing voltages formed by the first read current and the second read current to determine the sensed resistive data state for each resistive memory unit. Then the method includes adjusting the first or the second read current, read voltages, or storage device capacitance for each resistive memory unit where the sensed resistive data state was not the same as the first resistive data state until the sensed resistive data state is the same as the first resistive data state.

Abstract: A class of topomimetic calixarene-based peptide mimetics is described. Calixarene-based peptide mimetics have various biological activities such as, for example, bactericidal activity, antiangiogenic activity, and/or antitumor activity. Methods of use and methods of designing calixarene-based peptide mimetics are described.

Abstract: The present invention provides a new fluorescent protein, engineered to facilitate release from self-cleaving peptides.

Abstract: A walk-behind trenching vehicle incorporating a trenching boom with an endless trenching chain. The trenching boom may be connected to a forward end of the vehicle via a dual pivot mechanism. The boom may be movable between an operating position and a transport position via a single actuator, e.g., hydraulic cylinder.

Abstract: A staggered magnetic tunnel junction includes a free magnetic layer extending in a lateral direction between a first end portion and an opposing second end portion and a tunneling barrier disposed between a reference magnetic layer and the first end portion and forming a magnetic tunnel junction. Current flows through the free magnetic layer in the lateral direction to switch the magnetic tunnel junction between a high resistance state and a low resistance state.

Abstract: Spin torque magnetic logic devices that function as memory devices and that can be reconfigured or reprogrammed as desired. In some embodiments, the logic device is a single magnetic element, having a pinned layer, a free layer, and a barrier layer therebetween, or in other embodiments, the logic device has two magnetic elements in series. Two input currents can be applied through the element to configure or program the element. In use, logic input data, such as current, is passed through the programmed element, defining the resistance across the element and the resulting logic output. The magnetic logic device can be used for an all-function-in-one magnetic chip.

Abstract: Spin-transfer torque memory having a compensation element is disclosed. A spin-transfer torque memory unit includes a free magnetic layer having a magnetic easy axis and a magnetization orientation that can change direction due to spin-torque transfer when a write current passes through the spin-transfer torque memory unit; a reference magnetic element having a magnetization orientation that is pinned in a reference direction; an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the magnetic reference element; and a compensation element adjacent to the free magnetic layer. The compensation element applies a bias field on the magnetization orientation of the free magnetic layer. The bias field is formed of a first vector component parallel to the easy axis of the free magnetic layer and a second vector component orthogonal to the easy axis of the free magnetic layer.

Abstract: A magnetic stack having a free layer having a switchable magnetization orientation, a reference layer having a pinned magnetization orientation, and a barrier layer therebetween. The stack includes an annular antiferromagnetic pinning layer electrically isolated from the free layer and in physical contact with the reference layer. In some embodiments, the reference layer is larger than the free layer.