Abstract: A semiconductor device includes a fuse part including an antifuse that is connected between a first common node to which a high voltage that is higher than an internal boost voltage is applied and a first node. The fuse part is enabled in response to a program mode selection signal and an address signal so as to fuse the antifuse in response to the high voltage applied to the first common node and to set a voltage level of a second node. A latch circuit is configured to latch an output signal responsive to the voltage level of the second node when the fuse part is in a fused state. A protection circuit is configured to lower a voltage level at the first node when the fuse part is not enabled and the high voltage is applied to the first common node.

Abstract: Digital cameras with triangulation auto focus systems include a spot beam emitter than can be used to project a spot onto a subject that is captured in an image and used to electronically automatically determine a subject to camera distance.

Abstract: Embodiments of the present invention allow for controlling a microactuator based at least in part on an output of a temperature sensor. Also, embodiments of the present invention allow for adjusting a control of a microactuator so as to compensate for changes in a gain of the microactuator due to changes in temperature.

Abstract: Embodiments of the present invention provide translating gates having at least one cooperating stiffener assembly and related, apparatus, systems, methods and computer program products. The translating gates with at least one stiffener assembly may be particularly suitable for non-pivoting clippers, such as, for example, stationary-mount clippers. The stiffener assembly can be configured to stiffen, brace and/or otherwise keep the gate assembly tightly closed during a clipping operation.

Abstract: Aspirator systems include an aspirator body member having a fluid passageway extending therein and a first and second optical conductor configured to receive and/or transmit light therethrough. A drive mechanism may be coupled to the aspirator body member and configured to move the aspirator body member between an advanced position and a retracted position. An aspirator tip is coupled to the aspirator body member at an end of the fluid passageway and having a fluid passageway therein extending from the end of the fluid passageway of the aspirator body member when coupled to the aspirator body member, the aspirator tip being coupled to the first and second optical conductors and comprising an optically transmissive material.

Abstract: A bit failure detection circuit supports reliability testing of a memory device by accumulating a sum of data errors in data read from the memory device. The detection circuit compares a plurality of bytes of data read from the memory device against a plurality of bytes of reference data supplied during a test operation. The detection circuit also generates a flag upon detection that the sum of data errors exceeds a threshold number of acceptable data errors.

Abstract: A semiconductor device includes a semiconductor substrate having a surface, buried isolation regions protruding from the surface of the semiconductor substrate, and a first insulating layer on the surface of the semiconductor substrate between the isolation regions and including a fluorine, nitrogen, and/or heavy hydrogen impurity. A floating electrode is on the first insulating layer, a second insulating layer is on the floating electrode and the isolation regions, and a control gate electrode is on the second insulating layer. Related methods of forming semiconductor devices are also disclosed.

Abstract: Acoustically absorptive carpeting includes a primary layer of fibrous material with yarn tufts extending outwardly therefrom and a secondary layer of thermoplastic material that forms a carpet backing. The carpet backing is rendered porous. A substrate of porous material is attached to the carpet backing. The substrate includes a layer of fine fibrous material attached to a layer of coarse fibrous material. The layers of fine and coarse fibrous material each have respective different acoustic impedances. The layer of coarse fibrous material has fibers in an open, loose configuration. The carpet backing is bonded to the layer of coarse fibrous material with a thermoplastic adhesive material such that the thermoplastic adhesive material encapsulates individual fibers of the layer of coarse fibrous material without extending therebetween.

Abstract: A processor is configured to perform a method (110) including a step of deriving lateral offset indicators (1062) from a longitudinal position measurement (130). Improved seek cost indicators (1063) are generated, some or all based on a respective lateral offset indicator (140). Then a target destination is selected using at least one of the improved seek cost indicators (150,160).

Abstract: A method of making a bacteriochlorin is carried out by condensing a pair of compounds of Formula II to produce the bacteriochlorin, wherein R is an acetal or aldehyde group. The condensing may be carried out in an organic solvent, preferably in the presence of an acid. The bacteriochlorins are useful for a variety of purposes such as active agents in photodynamic therapy, luminescent compounds in flow cytometry, solar cells, light harvesting arrays, and molecular memory devices.

Abstract: Conductor structures include a substrate, a first conducting layer that is selectively passivated from growth of unwanted surface layers by the application of a selective passivation layer, and a second conducting layer that is applied onto the selective passivation layer. The selective passivation layer prevents the combination of unwanted materials with the first conducting layer while allowing the combination of the applied second conducting layer with the first conducting layer. The selective passivation layer is displaced by the second conducting layer and remains as a passivation layer on the exposed surface of the second conducting layer being displaced, thereby protecting the first and second conducting layers from unwanted materials or unwanted surface layers. Methods of fabricating conductor structures are also provided.

Abstract: Fin-Field Effect Transistors (Fin-FETs) are provided. A fin is provided on an integrated circuit substrate. The fin defines a trench on the integrated circuit substrate. A first insulation layer is provided in the trench such that a surface of the first insulation layer is recessed beneath a surface of the fin exposing sidewalls of the fin. A protection layer is provided on the first insulation layer and a second insulation layer is provided on the protection layer in the trench such that protection layer is between the second insulation layer and the sidewalls of the fin.

Abstract: A semiconductor device includes a first structure having a recess having a bottom and opposing side surfaces, and a second structure conformally disposed on the bottom and side surfaces of the recess. The second structure includes a multilayer having two layers having a thickness substantially smaller than a width of the recess. Methods of manufacturing a semiconductor device include providing a first structure having a recess in a deposition chamber and flowing first and second reactants over the first structure for a first period at first and second flow rates. Then, the flow rates of the first second reactants to the first structure are substantially reduced for a pause period. The first and second reactants are then flowed over the first structure for a second period at third and fourth flow rates. The deposition and pause steps may be repeated until a multilayer having a desired thickness is formed.

Abstract: Semiconductor light emitting circuits include semiconductor light emitting diodes that are serially connected between a pair of input terminals. Four layer semiconductor devices, such as Shockley diodes and/or thyristors are also provided, a respective one of which is connected across a respective one of the semiconductor light emitting diodes. The four layer semiconductor devices can allow a string of light emitting diodes to continue to be lit if one light emitting diode fails.

Abstract: A non-volatile memory device includes a substrate having a first region and a second region. A first gate electrode is disposed on the first region. A multi-layered charge storage layer is interposed between the first gate electrode and the substrate, the multi-layered charge storage including a tunnel insulation, a trap insulation, and a blocking insulation layer which are sequentially stacked. A second gate electrode is placed on the substrate of the second region, the second gate electrode including a lower gate and an upper gate connected to a region of an upper surface of the lower gate. A gate insulation layer is interposed between the second gate electrode and the substrate. The first gate electrode and the upper gate of the second gate electrode comprise a same material.

Abstract: A disposable electronic device includes a housing, a user interface in the housing and a short range, unlicensed wireless transceiver in the housing. A controller is configured to control the user interface and the short range, unlicensed wireless transceiver. A non-replaceable, non-rechargeable battery also is provided in the housing. New forms of disposable, proximity-based communications systems, devices and methods thereby may be provided.

Abstract: A mechanical rotation and electrical interface device is provided in a portable electronic device. The interface device includes a hinge having a single signal connection in its interior between a first and a second part of the portable electronic device, a first processing unit connected to the hinge and to a number of parallel conductors in the first part, where the first processing unit receives a number of parallel electrical signals generated in the first part, combines these into a single signal and transmits this single signal over the single signal connection, and a second processing unit connected to the hinge and to a number of parallel conductors provided in the second part, where the second processing unit receives the combined signal, splits it into a number of parallel signals and provides these to the parallel conductors provided in the second part.

Abstract: A cross-point nonvolatile memory device using a binary metal oxide layer as a data storage material layer includes spaced apart doped lines disposed in a substrate. Spaced apart upper electrodes cross over the doped lines such that cross points are formed where the upper electrodes overlap the doped lines. Lower electrodes are disposed at the cross points between the doped lines and the upper electrodes. A binary metal oxide layer is provided between the upper electrodes and the lower electrodes and provided as a data storage material layer. Doped regions are provided between the lower electrodes and the doped lines and form diodes together with the doped lines. The doped regions have an opposite polarity to the doped lines.

Abstract: A communication terminal includes a communication module, a camera device, a display device, and a controller. The communication module receives a display characteristic command and an input video data stream from a remotely located other communication terminal and sends an output video data stream thereto. The camera device generates an initial video data stream based on incident light. The display device displays a received input video data stream from the remote communication terminal. The controller generates the output video data stream based on the initial video data stream and a received display characteristic command from the remote communication terminal.

Abstract: Methods of forming a fine pattern include forming an underlying layer on a substrate, forming preliminary hard mask patterns having a first pitch on the underlying layer, the preliminary hard mask patterns having a first width and being spaced apart from each other by a second width smaller than the first width. The underlying layer is etched using the preliminary hard mask patterns as etch masks to thereby form preliminary underlying patterns. The preliminary hard mask patterns are pulled back, thereby forming hard mask patterns on the preliminary underlying patterns. An overlayer is formed on the substrate exposing top surfaces of the hard mask patterns. The hard mask patterns and the preliminary underlying patterns disposed below the hard mask patterns are etched using the overlayer as an etch mask, thereby forming underlying patterns having a second pitch smaller than the first pitch, and the overlayer is removed.