Abstract: A wireless communication device includes a transceiver configured for communication using multiple radio access technologies. An antenna array is coupled to the transceiver, and includes a first antenna element and a second antenna element. A control circuit is operable to detect an available one of the radio access technologies based on a wireless signal received at the antenna array, and is operable to automatically alter a configuration of the antenna array by switching the first and/or second antenna elements between active and inactive states responsive to detection of the available one of the radio access technologies. Related methods of operation are also discussed.

Abstract: Periodic signal generators include an oscillator circuit, which is configured to generate a first periodic signal at an output thereof, and a piezoelectric-based microelectromechanical resonator. The resonator is configured to generate a second periodic signal at a first electrode thereof, which is electrically coupled to the oscillator circuit. A variable impedance circuit is provided, which is electrically coupled to a second electrode of the piezoelectric-based microelectromechanical resonator. The variable impedance circuit is configured to passively modify a frequency of the second periodic signal by changing an induced electromechanical stiffness in at least a portion of the piezoelectric-based microelectromechanical resonator.

Abstract: In a method and device the TCP load offered in the uplink is manipulated such that an offered load asymmetry is achieved. Using such an arrangement it is possible to compensate for a link asymmetry when uplink and downlink connections are sharing the same uplink buffer in order to increase performance of the downlink. The method and device are capable of increasing the download performance both in the case when TCP connections are terminated in a different device than the terminal where the link layer is terminated, as well as when the TCP connections are terminated in the same device as the link-layer.

Abstract: A waterless method of processing coal to remove impurities therefrom includes drying a batch of coal to remove moisture therefrom, pulverizing the coal into individual coal particles to liberate impurity particles from the coal and without substantially reducing the size of the impurity particles, and separating the impurity particles and pulverized coal particles into respective product streams via air classification. The dryer includes a plurality of rotating paddles, and an air stream forces the coal through the plurality of rotating paddles to pulverize the coal into individual particles and liberate the impurities.

Abstract: A power amplifier (10) configured to generate impedances at harmonic frequencies such that the power amplifier (10) operates in a class C mode in a low output amplitude range and in a class F or inverse F mode in a high output amplitude range.

Abstract: Methods of detecting proximity between a mobile terminal and a wireless accessory device having an associated support function for use with the mobile terminal include establishing a wireless communication connection between the wireless accessory device and the mobile terminal. The established wireless communication connection is utilized to provide the associated support function. In addition, a wireless signal having a limited range is communicated between the mobile terminal and the wireless accessory device. The wireless signal indicates a proximity between the mobile terminal and the wireless accessory device. An alert signal indicating that the proximity between the mobile terminal and the wireless accessory device has exceeded a predetermined range is provided responsive to the communicated wireless signal when the established wireless communication connection is not being utilized to provide the associated support function. Related devices are also provided.

Abstract: Provided is a programming method that increases writing performance of a flash memory device. The programming method for a flash memory device that includes a plurality of banks including a plurality of memory cells for storing multi-bit data includes the following: programming a most significant bit (MSB) page with respect to banks of a first bank group; programming a least significant bit (LSB) page with respect to banks of a second bank group; programming the MSB page with respect to the banks of the second bank group; and programming the LSB page with respect to the banks of the first bank group.

Abstract: In a method of controlling the power state of a peripheral device, the peripheral is changed from a first power state to a second power state in response to communications across a network connected to the peripheral indicating that a user is proximately located to the peripheral. A user may be determined to be proximately located to the peripheral by monitoring communications across the network to detect traffic that is associated with a user logging onto a computer that can utilize the peripheral, by discovering a wireless terminal that is associated with a user and which is proximately located to the peripheral, by receiving information from a cellular communication network across the network that indicates that a user of the peripheral is proximately located to the peripheral, and/or in response to a time of day and/or day of week/month schedule.

Abstract: An electronic device includes a universal serial bus (USB) interface therein. This USB interface is configured to support at least first and second different USB interface standards. These different interface standards are selected by the electronic device in response to comparing a voltage level of a signal provided to said USB interface relative to a reference voltage generated within the electronic device. The signal provided to the USB may be a power supply signal, the first USB standard may be a USB 2.0 interface standard and the second USB standard may be an inter-chip USB interface standard.

Abstract: A semiconductor memory device includes a semiconductor substrate, a semiconductor pillar extending from the semiconductor substrate, the semiconductor pillar comprising a first region, a second region, and a third region, the second region positioned between the first region and the third region, the third region positioned between the second region and the semiconductor substrate, immediately adjacent regions having different conductivity types, a first gate pattern disposed on the second region with a first insulating layer therebetween, and a second gate pattern disposed on the third region, wherein the second region is ohmically connected to the substrate by the second gate pattern.

Abstract: A magnetic memory device may include a tunnel barrier, a reference layer on a first side of the tunnel barrier, and a free layer on a second side of the tunnel barrier so that the tunnel barrier is between the reference and free layers. The free layer may include a first magnetic layer adjacent the tunnel barrier, a nonmagnetic layer on the first magnetic layer, and a second magnetic layer on the nonmagnetic layer. More particularly, the nonmagnetic layer may be between the first and second magnetic layers, and the first magnetic layer may be between the tunnel barrier and the second magnetic layer. A product of a saturated magnetization of the first magnetic layer and a thickness of the first magnetic layer may be less than a product of a saturated magnetization of the second magnetic layer and a thickness of the second magnetic layer. Related methods are also discussed.

Abstract: The present invention overcomes the problem of S1 interface failure by redirecting user equipments to another radio basestation, or another RAT. This redirecting may be on a UE-by-UE basis, i.e. when a connection request is received, redirecting that UE, or may involve redirecting all UEs in a cell by broadcasting modified system information. The redirecting may be such that future traffic load, for example as caused by UEs performing tracking area updates, is minimized, by instructing UEs to redirect after a randomized period of time, or by locking the cell after a randomized period of time, for example. In yet further embodiments of the invention, the cell may be locked after a certain number of connection requests have been received. In this way, particularly busy cells can be locked sooner than would otherwise be the case.

Abstract: A system on chip (SOC) includes a processor circuit configured to receive instruction information from an external source and to execute an instruction according to the received instruction information and a workload estimator circuit configured to monitor instruction codes executed in the processor circuit, to generate an estimate of a workload of the processor circuit based on the monitored instruction codes and to generate power supply voltage control signal based on the estimate of the workload. The SOC may further include a power management integrated circuit (PMIC) configured to receive the control signal and to adjust a power supply voltage provided to the SOC in response to the control signal.

Abstract: A connection is established in a communications network responsive to receiving a Dual Tone Multi-Frequency (DTMF) signal at a port having an assigned sequence associated therewith. A dialed sequence corresponding to the received DTMF signal is identified. If the dialed sequence is associated with a request for a specified service, first and second fields of a packet-switched signaling protocol message are populated with the assigned sequence associated with the port. The populated packet-switched signaling protocol message is transmitted over a packet-switched network to request the specified service, and a connection is established to provide the specified service through the port. Related systems and devices are also discussed.

Abstract: The present invention provides compounds, compositions, and methods for detecting, diagnosing and treating cancers such as glioblastoma multiforme.

Abstract: A memory device includes a stacked resistive memory cell array comprising a plurality of resistive memory cell layers stacked on a semiconductor substrate, wherein respective memory cell layers are configured to store data according to respective program modes comprising a number of bits per cell. The memory device further includes a control circuit configured to identify a program mode of a selected memory cell layer responsive to an address signal and to access the selected memory cell layer responsive to the address signal according to the identified program mode. The program modes may include a single-level cell mode and at least one multi-level cell mode.

Abstract: A Resistance based Random Access Memory (ReRAM) can include a sense amplifier circuit that includes a first input coupled to a bit line of a reference cell in a first block of the ReRAM responsive to a read operation to a second block.

Abstract: In one aspect, cabin interphone handsets and passenger announcement speakers in the cabin of a vehicle communicate over an internet protocol data network. Each handset of the system has an internet protocol presence and each passenger announcement speaker of the system has an internet protocol presence. Each handset includes announcement and call management functions so that each handset can communicate with one or more handsets over the network as well as make passenger announcements via one or more passenger announcement speakers. The call setup function and PA function may utilize voice over internet protocol. In another aspect, methods are provided for making interphone calls and passenger announcements using the system.

Abstract: In a vertical-type non-volatile memory device, an insulation layer pattern is provided on a substrate, the insulation layer pattern having a linear shape. Single-crystalline semiconductor patterns are provided on the substrate to make contact with both sidewalls of the insulation layer pattern, the single-crystalline semiconductor patterns having a pillar shape that extends in a vertical direction relative to the substrate. A tunnel oxide layer is provided on the single-crystalline semiconductor pattern. A lower electrode layer pattern is provided on the tunnel oxide layer and on the substrate. A plurality of insulation interlayer patterns is provided on the lower electrode layer pattern, the insulation interlayer patterns being spaced apart from one another by a predetermined distance along the single-crystalline semiconductor pattern. A charge-trapping layer and a blocking dielectric layer are sequentially formed on the tunnel oxide layer between the insulation interlayer patterns.

Abstract: Methods, systems and computer program products for displaying tag words for selection by users engaged in social tagging of content accessible via a communications network, are provided. A tag cloud, tag word inventory curve and slider control are displayed within a graphical user interface. The tag cloud is a visual representation of an inventory of tag words. The tag word inventory curve is a graphical representation of the words in the inventory by frequency of usage by others. The slider control is responsive to user movement, and is movable within a range that spans the length of the tag word inventory curve. Movement of the slider control changes the number of tag words from the inventory displayed in the tag cloud according to frequency of usage by others.