Abstract: A cryptographic system includes encryption logic that is configured to encrypt input data by performing a mask operation on the input data using an address associated with the input data.

Abstract: A nanoscopic transistor is made by forming an oxide layer on a semiconductor substrate, applying resist, patterning the resist using imprint lithography to form a pattern aligned along a first direction, applying a first ion-masking material over the pattern, selectively lifting it off to leave a first ion mask to form a gate, forming doped regions by implanting a suitable dopant, applying another layer of resist and patterning the second resist layer using imprint lithography to form a second pattern aligned along a second direction, applying a second ion-masking material over the second pattern, selectively lifting it off to leave a second ion mask defined by the second pattern, and forming second doped regions in the substrate by implanting a suitable second dopant selectively in accordance with the second ion mask. The method may be used to make an array of nanoscopic transistors.

Abstract: Methods, systems, and devices are disclosed for detecting encrypted Internet Protocol packet streams. The type of data within an encrypted stream of packets is inferred using an observable parameter. The observable parameter is observable despite encryption obscuring the contents of the encrypted stream of packets. A timer is established that maintains settings despite changes in the type of inferred data.

Abstract: Methods of applying cyclopropene amine derivatives and compositions thereof to inhibit ethylene receptors in plants and plant material are disclosed. Methods include applying to the plant an effective ethylene response-inhibiting amount of at least one cyclopropene amine compound or composition thereof. Cyclopropene amine compounds, enantiomers, stereoisomers or salts thereof are also provided.

Abstract: Dry powder drug containment systems with a stick substrate and at least one dry powder receptacle or container that can be detached or opened to release dry powder in an inhaler. Related inhalers and kits of sticks are described.

Abstract: Flash memory devices include a pair of elongated, closely spaced-apart main active regions in a substrate. A sub active region is also provided in the substrate, extending between the pair of elongated, closely spaced-apart main active regions. A bit line contact plug is provided on, and electrically contacting, the sub active region and being at least as wide as the sub active region. An elongated bit line is provided on, and electrically contacting, the bit line contact plug remote from the sub active region.

Abstract: Disclosed is a program method of a non-volatile memory device which comprises classifying plural memory cells into aggressor cells and victim cells based on program data to be written in the plural memory cells; and programming the aggressor cells by a program manner different from the victim cells.

Abstract: A device estimates a load on the device based on static and dynamic load information associated with the device, provides the estimated load to the other devices in a pool of devices, and estimates, based on the estimated load, a weight of the device in the pool. The device also detects a load imbalance in the pool based on the estimated weight and weights associated with the other devices in the pool, and determines, based on the estimated load, a number of subscribers to offload from the device. The device further determines, based on the estimated weight and the weights associated with the other devices, to which of the other devices to offload the determined number of subscribers, and offloads, to address the load imbalance, the determined number of subscribers to the determined other devices in the pool.

Abstract: Methods and related liquid crystal display devices are disclosed that reduce/avoid a tearing effect in displayed images. A scan time of a scan clock signal of a display is detected. A write time of a write clock signal that writes data into a memory for display on the display is detected. The write time is regulated in response to a comparison of the scan time of the scan clock signal to the write time of the write clock signal.

Abstract: Provided herein are methods of treating cancer comprising administering decitabine in combination with compounds that inhibit the deamination enzyme responsible for the inactivation of decitabine.

Abstract: Halftone phase shift photomasks are provided including a substrate configured to transmit light; a shift pattern on the substrate, the shift pattern including a pattern area on a center portion of the substrate and a blind area disposed on a periphery of the substrate, the shift pattern of the blind area having a greater thickness than a thickness that of the pattern area, and being configured to partially transmit the light; and a light shielding pattern formed on the shift pattern in the blind area and being configured to shield the light. Related methods are also provided herein.

Abstract: Semiconductor devices include a gate electrode, a gate insulation layer, a first channel layer pattern, a second channel layer pattern and first and second metallic patterns. The gate electrode is on a substrate. The gate insulation layer is on the gate electrode. The first channel layer pattern is on the gate insulation layer, and has a first conductivity level. The second channel layer pattern is on the first channel layer pattern, and has a second conductivity level that is lower than the first conductivity level. The first and second metallic patterns are on the gate insulation layer and contact respective sidewalls of the first and second channel layer patterns.

Abstract: The invention relates to a method and an arrangement for reducing transmission delay on a radio interface in a communication network, comprising a communication network node (15) transmitting packet data to one or more user equipments (18) over said radio interface. A number of transmission attempts needed for transmitting said packet data estimating, based on which a number of re-transmissions of said first packet data to perform is determined. The determined number of re-transmission is proactively transmitted before an ACK or NACK message is received from the user equipments.

Abstract: A processing unit includes an instruction fetch unit that is configured to process a compiled instruction that includes a plurality of fields. The plurality of fields includes a flag field that identifies memory blocks to be activated for fetching a next instruction. Each of the memory blocks has stored therein one or more fields used to form the next instruction and assigned to the memory blocks in a predetermined way. A block enable signal generator is configured to generate at least one block enable signal to selectively activate the memory blocks in the predetermined way. The flag field is included in fields of an instruction having the shortest length among instructions of the processing unit.

Abstract: Providing personal multi-device nomadic media is described herein. In different aspects, the techniques may include providing content to a user on a first device and suspending the delivery of the content on the first device. The user may register on a second device and resume delivery of the suspended content on the second device.

Abstract: Fluid analyte sensors include a photoelectrocatalytic element that is configured to be exposed to the fluid, if present, and to respond to photoelectrocatalysis of at least one analyte in the fluid that occurs in response to impingement of optical radiation upon the photoelectrocatalytic element. A semiconductor light emitting source is also provided that is configured to impinge the optical radiation upon the photoelectrocatalytic element. Related solid state devices and sensing methods are also described.

Abstract: Methods of manufacturing NOR-type flash memory device include forming a tunnel oxide layer on a substrate, forming a first conductive layer on the tunnel oxide layer, forming first mask patterns parallel to one another on the first conductive layer in a y direction of the substrate, and selectively removing the first conductive layer and the tunnel oxide layer using the first mask patterns as an etch mask. Thus, first conductive patterns and tunnel oxide patterns are formed, and first trenches are formed to expose the surface of the substrate between the first conductive patterns and the tunnel oxide patterns. A photoresist pattern is formed to open at least one of the first trenches, and impurity ions are implanted using the photoresist pattern as a first ion implantation mask to form an impurity region extending in a y direction of the substrate. The photoresist pattern is removed.

Abstract: Provided are a semiconductor structure and a method of fabricating a semiconductor device. The method includes: preparing a substrate or an etch-target layer which is to be patterned; forming a first anti-reflective coating, which contains silsesquioxane resin and a cross-linking catalyst, on the substrate or the etch-target layer; forming an anti-penetration film and a second anti-reflective coating by causing a cross-linking reaction in a region of the first anti-reflective coating; and forming a photoresist pattern on the anti-penetration film.

Abstract: Methods of forming a low-dose-rate (LDR) brachytherapy device include depositing a solution comprising a soluble form of a radioactive material on a substrate. A water-insoluble form of the radioactive material is formed on the substrate by chemical precipitation and/or thermal decomposition.

Abstract: A nonvolatile memory device includes a string selection gate and a ground selection gate on a semiconductor substrate, and a plurality of memory cell gates on the substrate between the string selection gate and the ground selection gate. First impurity regions extend into the substrate to a first depth between ones of the plurality of memory cell gates. Second impurity regions extend into the substrate to a second depth that is greater than the first depth between the string selection gate and a first one of the plurality of memory cell gates immediately adjacent thereto, and between the ground selection gate and a last one of the plurality of memory cell gates immediately adjacent thereto. Related fabrication methods are also discussed.