Abstract: Embodiments of the present invention generally include TFTs and methods for their manufacture. The gate dielectric layer in the TFT may affect the threshold voltage of the TFT. By treating the gate dielectric layer prior to depositing the active channel material, the threshold voltage may be improved. One method of treating the gate dielectric involves exposing the gate dielectric layer to N2O gas. Another method of treating the gate dielectric involves exposing the gate dielectric layer to N2O plasma. Silicon oxide, while not practical as a gate dielectric for silicon based TFTs, may also improve the threshold voltage when used in metal oxide TFTs. By treating the gate dielectric and/or using silicon oxide, the threshold voltage of TFTs may be improved.

Abstract: A gas field ion source is described. The gas field ion source includes an emitter module. The emitter module includes an emitter holder, an emitter structure, a detachably connectable electrical connection assembly of the emitter module, and a detachably connectable gas supply connection assembly of the emitter module. The gas field ion source further includes a supply module, wherein the supply module includes an electrical conductor for providing voltage and/or current, a gas supply conduit, a thermal conductor, a detachably connectable electrical connection assembly of the supply module, and a detachably connectable gas supply connection assembly of the supply module. The emitter module and the supply module are detachably connectable by the detachably connectable connection assemblies of the emitter module and the detachably connectable connection assemblies of the supply module.

Abstract: A charged particle gun alignment assembly for emitting a charged particle beam along an optical axis of a charged particle beam device is described. The charged particle gun alignment assembly is configured to compensate for misalignment of the charged particle beam and includes a charged particle source having an emitter with a virtual source defining a virtual source plane substantially perpendicular to the optical axis; a condenser lens for imaging the virtual source; a final beam limiting aperture adapted for shaping the charged particle beam; and a double stage deflection assembly positioned between the condenser lens and the final beam limiting aperture, wherein the working distance of the condenser lens is 15 mm or less.

Abstract: A method and apparatus for adjust local plasma density during a plasma process. One embodiment provides an electrode assembly comprising a conductive faceplate having a nonplanar surface. The nonplanar surface is configured to face a substrate during processing and the conductive faceplate is disposed so that the nonplanar surface is opposing a substrate support having an electrode. The conductive faceplate and the substrate support form a plasma volume. The nonplanar surface is configured to adjust electric field between the conductive plate and the electrode by varying a distance between the conductive plate and the electrode.

Abstract: Embodiments of the invention generally relate to a vacuum processing system for processing large area substrates, such as flat panel displays (i.e., LCD, OLED, and other types of flat panel displays), solar panels, and the like. In one embodiment, a vacuum processing system includes a plurality of processing chambers coupled to a vacuum transfer chamber suitable to accommodate a large area substrate and a least one horizontal platform disposed between adjacent processing chambers. The vacuum transfer chamber has a robot disposed therein. The platform is coupled to a base supporting one of the adjacent processing chambers.

Abstract: A fiber lens assembly is configured to optically couple an optical fiber to a signal processing device having free-space optical elements. The fiber lens assembly includes a diverging lens having a focal length that may be around 2 to 6 times the diameter of the optical fiber core. Sensitivity of the fiber lens assembly to angular misalignment and positional displacement is reduced by coupling the optical fiber to the signal processing device using a diverging lens rather than a collimating lens, and by configuring the diverging lens with a suitable focal length.

Abstract: A suspension for a two-wheeled vehicle includes first and second fork legs. Each fork leg includes a dropout. Each dropout has an opening therethrough. At least a portion of one of the openings is threaded. Each of the dropouts includes a split-clamp pinch bearing defining the opening and operable between an open position and a locked position, and a hand operable actuator pivoted to the bearing for operation thereof. The suspension further includes a one-piece axle. The axle is disposed through the openings. The axle has a threaded first end engaged with the threaded portion. The axle has an ergonomic grip formed at a second end. The bearing tightly engages an outer surface of the axle in the locked position, thereby rotationally coupling the axle to the dropout.

Abstract: In one embodiment of the invention, a method for finishing or treating a silicon-containing surface is provided which includes removing contaminants and/or smoothing the surface contained on the surface by a slow etch process (e.g., about <100 ?/min). The silicon-containing surface is exposed to an etching gas that contains an etchant and a silicon source. Preferably, the etchant is chlorine gas so that a relatively low temperature (e.g., <800° C.) is used during the process. In another embodiment, a method for etching a silicon-containing surface during a fast etch process (e.g., about >100 ?/min) is provided which includes removing silicon-containing material to form a recess in a source/drain (S/D) area on the substrate. In another embodiment, a method for cleaning a process chamber is provided which includes exposing the interior surfaces with a chamber clean gas that contains an etchant and a silicon source.

Abstract: Apparatus and method for endpoint detection are provided for photomask etching. The apparatus provides a plasma etch chamber with a substrate support member. The substrate support member has at least two optical components disposed therein for use in endpoint detection. Enhanced process monitoring for photomask etching are achieved by the use of various optical measurement techniques for monitoring at different locations of the photomask.

Abstract: A method of displaying colors for selection by a user in which a range of first color attributes (e.g. hue) is displayed in a first linear selection bar. The first color attributes varying along the length of the first selection bar. The method further comprising displaying a range of second color attributes (e.g. saturation and brightness) in a second linear selection bar. The second color attributes varying along the length of the second selection bar. A method for selecting colors in which a color from under the pointer is selected as soon as it has been left in the same position for a predetermined period of time.

Abstract: A method for obtaining a desired dopant profile of an emitter for a solar cell which includes depositing a first amorphous silicon layer having a first doping level over an upper surface of the crystalline silicon substrate, depositing a second amorphous silicon layer having a second doping level on the first amorphous silicon layer, and heating the crystalline silicon substrate and the first and second amorphous silicon layers to a temperature sufficient to cause solid phase epitaxial crystallization of the first and second amorphous silicon layers, such that the first and second amorphous silicon layers, after heating, have the same grain structure and crystal orientation as the underlying crystalline silicon substrate.

Abstract: A screen nozzle for a media retention screen is disclosed which includes a nipple, a bottom cover, a top cover, and a cylindrical screen element sandwiched between the top and bottom covers. The top cover is secured to the bottom cover by means of a threaded rod extending from either the bottom cover or the nipple through the interior of the screen through an aperture in the top cover with the top cover being retained in place by a nut or the like. The nipple is secured to the bottom cover by swaging and the threaded rod is welded to the bottom cover. Assembling the screen element using an internal threaded rod has two substantial advantages over existing screen nozzles. The first advantage is that there are no external welds which may damage or deform or foul the screen and which are also are potential areas of weaknesses which may be subject to corrosion. Secondly the screen element may be replaced without removing the nozzle from the screen plate.

Abstract: Embodiments of the present invention provide methods and apparatus for removing debris particles using a stream of charged species. One embodiment of the present invention provides an apparatus for removing debris particles from a beam of radiation comprising a charged species source configured to dispense electrically charged species, and a collecting plate biased electrically opposite to the charged species from the charged species source, wherein the collecting plate and the charged species source are disposed on opposite sides of the beam of radiation, a stream of charged species from the charged species source to the collecting plate intersects the beam of radiation, the stream of charged species is configured to attach and remove debris particles from the beam of radiation by electrostatic force, and the collecting plate is configured to receive the charged species and the debris particles removed from the beam of radiation.

Abstract: Methods for forming boron-containing films are provided. The methods include introducing a boron-containing precursor and a nitrogen or oxygen-containing precursor into a chamber and forming a boron nitride or boron oxide film on a substrate in the chamber. In one aspect, the method includes depositing a boron-containing film and then exposing the boron-containing film to the nitrogen-containing or oxygen-containing precursor to incorporate nitrogen or oxygen into the film. The deposition of the boron-containing film and exposure of the film to the precursor may be performed for multiple cycles to obtain a desired thickness of the film. In another aspect, the method includes reacting the boron-containing precursor and the nitrogen-containing or oxygen-containing precursor to chemically vapor deposit the boron nitride or boron oxide film.

Abstract: Embodiments of the invention generally relate to methods and apparatuses for anchoring progressing cavity (PC) pumps. In one embodiment, a method of anchoring a PC pump to a string of tubulars disposed in a wellbore which includes acts of inserting the PC pump and anchor assembly into the tubular. Running the PC pump and anchor assembly through the tubular to any first longitudinal location along the tubular string. Longitudinally and rotationally coupling the PC pump and the anchor assembly to the tubular and forming a seal between the PC pump and the tubular string at the first location and performing a downhole operation in the tubular.

Abstract: Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process.

Abstract: Embodiments described herein generally relate to apparatus and methods for forming Group III-V materials by metal-organic chemical vapor deposition (MOCVD) processes and hydride vapor phase epitaxial (HVPE) processes. In one embodiment, a method for fabricating a nitrogen-face (N-face) polarity compound nitride semiconductor device is provided. The method comprises depositing a nitrogen containing buffer layer having N-face polarity over one or more substrates using a metal organic chemical vapor deposition (MOCVD) process to form one or more substrates having N-face polarity and depositing a gallium nitride (GaN) layer over the nitrogen containing buffer layer using a hydride vapor phase epitaxial (HVPE) deposition process, wherein the nitrogen containing buffer layer and the GaN layer are formed without breaking vacuum and exposing the one or more substrates to atmosphere.

Abstract: The invention provides an optoelectronic device combining a vertical cavity surface emitting laser (VCSEL) and a photodetector for monitoring the output power of the vertical cavity surface emitting laser. To improve the signal-to-noise ratio of the photodetector, a light deflector is interposed between the photodetector and the VCSEL.

Abstract: Embodiments of the invention relate to particles of active substances, methods for preparing the particles, formulations containing the particles, and metered dose inhalers containing the particles or formulations. In one embodiment, an inhaler contains an aerosol formulation containing a particulate active substance of non-micronized, solid particles having a mass median aerodynamic diameter of less than 10 ?m. The particles may be suspended in a nonsolvent hydrofluorocarbon fluid vehicle (e.g., HFA 134a or 227ea) at a concentration within a range from about 0.2% w/v to about 5% w/v. The formulation exhibits a flocculation volume of about 85% or greater about 1 minute after mixing the particulate active substance and the vehicle. The particulate active substance may contain salmeterol xinafoate, budesonide, salbutamol sulfate, dihydroergotamine mesylate, risperidone-(9-hydroxy)-palmitate, bromocriptine mesylate, or derivatives thereof. In some examples, the active substance is dihydroergotamine mesylate.

Abstract: A system and method for setting an anchor and/or whipstock attached to a downhole motor having a cutting tool attached to a tubular member, such as coiled tubing. In one aspect, the motor allows flow therethrough sufficient to actuate an upstream MWD or other position measuring tool, and an orienter if so equipped, and retain the orientation of the motor with the attached whipstock. An increased flow rate or pressure actuates the motor once the whipstock is set and rotation of the cutting tool or other equipment can begin.