Abstract: A process for the preparation of a compound of formula (1): is provided, which comprises the reaction a compound of formula (2): with a compound of formula Al(OR)3 under substantially anhydrous conditions. X, and X1 are each independently H or a protecting group, B is a base; R is an alkyl, alkoxyalkyl, alkenyl or alkynyl group, each of which may be optionally substituted, and L is a leaving group.
Abstract: An optical multiplexing/demultiplexing apparatus in which a plurality of optical multiplexing/demultiplexing units operating in different wavelength bands are connected hierarchically. Each of the plurality of optical multiplexing/demultiplexing units includes an input waveguide for receiving wavelength multiplexed optical waves, a filter for separating the wavelength multiplexed optical wave from the input waveguide into a first optical wave in a corresponding operating wavelength band and a second optical wave in the other wavelength bands. Each of the multiplexing/demultiplexing units also includes an AWG optical multiplexer/demultiplexer for separating the first optical wave from the filter into individual optical waves each of a single wavelength, and a branch waveguide for directing the second optical waves from the filter to an input waveguide of a succeeding optical multiplexing/demultiplexing unit.
Abstract: A current detection circuit applicable to a switching circuit using switching transistors to supply a prescribed load current to a load, comprises a sample-hold capacitor for temporarily holding a terminal voltage of the switching transistor that is turned on, and a switch that is inserted between the switching transistor and sample-hold capacitor and is controlled to be turned on in synchronization with the ON-timing of the switching transistor, wherein charged voltage of the sample-hold capacitor is detected as a detection voltage. An overcurrent detection circuit is constituted in such a way that the switching transistor is compulsorily turned off when the detection voltage exceeds reference voltage. The switching circuit may correspond to a pulse-width modulation (PWM) amplifier using a pair of a PMOS transistor and an NMOS transistor that are alternately turned on or off.
Abstract: Main image information representing a portrait face image of a person is prepared. Predetermined pattern image information, used as sub image information, is also prepared. Synthetic image information is prepared by synthesizing the main image information with the pattern image information in such a manner that the pattern image information is embedded in the main image information in a state that is not recognizable to the eye of a human being. This synthetic image information is recorded on an ID card or the like as a visible image.
Abstract: The invention includes a ferrule having a layer of material on an inner surface of a hole therein which is selected to be preferentially softenable relative to the bulk material of the ferrule. The ferrule according to the present invention can be fused to optical fibers, capillaries and the like while reducing deformation of the fused component and the ferrule.
Type:
Grant
Filed:
July 24, 2001
Date of Patent:
April 26, 2005
Assignee:
Polymicro Technologies, Inc.
Inventors:
James P. Clarkin, John Shannon, Michael Swengler
Abstract: An apparatus for aiding a machinist in preparing a machining program. A machining simulator simulates a basic machining program. Values of machining variables are obtained during the simulation and stored in a simulation result data memory. A spindle load determiner, a cutting speed determiner, and a rotating speed determiner analyze the machining variable values of a certain machining process to determine the machining efficiency of that process. A navigation information memory stores a plurality of messages for giving advice on how to change the cutting conditions. A message, which depends on the analysis of the machining variable values, is selected from the memory and is shown on a display. Accordingly, an operator can easily modify the basic machining program by following the message on the display, even if the operator does not have much knowledge or experience.
Type:
Grant
Filed:
March 22, 1999
Date of Patent:
April 26, 2005
Assignee:
Yamazaki Mazak Kabushiki Kaisha
Inventors:
Kenji Suzuki, Toshiyuki Muraki, Makoto Tanahashi, Hirokazu Yoshida
Abstract: An RF power supply system (200) for use with an electrode (60) in a plasma reactor system (10) capable of supporting a plasma (32) with a plasma load impedance (ZR), wherein the electrode comprises a plurality of electrode segments (62a,62b, . . . , 62n). The system comprises a master oscillator (210), and a plurality of RF power supply subsystems (220a, 220b, . . . 220n) each electronically connected thereto, and to respective ones of the electrode segments. Each RF power supply subsystem includes a phase shifter (224), an amplifier/power supply (230), a circulator (236), a directional coupler (242), and a match network (MN/L). The latter has a match network impedance. The system further includes a control system (184) electronically connected to each RF power supply subsystem.
Abstract: A method for determining the potential of a plasma in a processing chamber includes determining voltages of respective plasma engaging surfaces of at least two plasma generating electrodes disposed within the processing chamber and determining the plasma potential by comparing the determined voltages and equating the highest determined voltage to the plasma potential.
Abstract: An electronic apparatus has a housing having one end, components contained in the housing, and a door which is lockable at a closed position to hide one end of the housing. The housing has a base to support the door, and a cover connected removable to the base. The cover is removed from the base by sliding toward the door, and hooked on the base by sliding away from the door. The door prevents the cover from sliding in the direction of separating the cover from the base, as long as being locked at the closed position.
Abstract: Embodiments of the present invention enable the matching of pull-up and pull-down driver strengths of a slave device (DDRII SDRAM), i.e., the P-channel/N-channel driver pull-up/pull-down Ron and also calibrates the P-channel/N-channel pull-up/pull-down drivers in their linear region of operation. Specifically, embodiments of the present invention may use the DDR-II Off Chip Driver (OCD) protocol for calibration, in addition to using circuit techniques to calibrate the slave driver pull-up Ron within 1 LSB of the pull-down Ron.
Abstract: A core of an excitation light source is spliced with a first optical fiber to which no laser activation material is added, so that the light output from the first optical fiber is injected to a second optical fiber to a core of which the laser activation material is added.
Abstract: Composite image information which is generated by embedding invisible sub-information in visible main image information and recorded on a recording medium is read. A spatial frequency component unique to key information used to restore the sub-information is extracted from the composite image information read from the recording medium. The sub-information is reconstructed from the extracted spatial frequency component.
Abstract: A liquid crystal display element includes array and counter substrates provided opposite to each other. The array substrate is covered with a color filter layer. Pixel electrodes are provided in a matrix form on the color filter layer. The surface of the counter substrate is provided with a common electrode. Alignment films are coated on the pixel and common electrodes. A gap defined between the array and counter substrates are filled with a liquid crystal material to form a liquid crystal layer. The alignment films are processed to have surface energy within the range from 51 to 60 dyn/cm. Such surface energy substantially prevents an image-sticking phenomenon of the liquid crystal display element caused by impurities dissolved into a liquid crystal layer and white or black turbid spots caused by hydrolysis of the alignment films by moisture in the liquid crystal layer.
Abstract: A differential pressure indicator has a housing with at least two ports in the housing. One port receives a first pressure, and the second port receives a second pressure. A pressure resistive device is placed between the first port and the second port. The pressure resistive device changes its position when the first pressure exceeds the second pressure by a predetermined amount. A magnet is coupled to the pressure resistive device. A digital displacement sensor senses the position of the magnet. The digital displacement sensor is in communication with an electronic indicator. The electronic indicator activates when the first pressure exceeds the second pressure by a predetermined amount.
Type:
Grant
Filed:
December 30, 2002
Date of Patent:
April 19, 2005
Assignee:
PTI Technologies, Inc.
Inventors:
Bijan Mouhebaty, Fermin Alejandro Sandoval Diaz, Daniel K. Moscaritolo
Abstract: An electronic imaging system includes a CCD image sensor arrangement having a two dimensional array of pixels. The pixel array converts light incident thereon to an electric signal. The pixels are arranged in a plurality of horizontal rows or lines, the lines being arranged vertically. A control arrangement selectively controls operational modes of the system. One mode provides for sequential scan reading out of pixel signals for entire lines of the CCD for still picture recording. Another mode provides for reading out pixel signals concerning k (k is a positive integer) vertically continuous lines of the CCD for still picture recording or dynamic image processing. Thus it is possible to provide a high pixel density solid-state image sensor output at a high frame rate without use of any high drive frequency.
Type:
Grant
Filed:
January 20, 1998
Date of Patent:
April 19, 2005
Assignee:
Olympus Corporation
Inventors:
Takayuki Kijima, Junzo Sakurai, Dai Kawase, Hiroyuki Watanabe
Abstract: A catalyst support comprising silicates is described. This catalyst support has a lower aluminum content than naturally occurring sheet silicates and can be used in the hydration of C2 and C3 olefins to produce C2 and C3 alcohols. A method for the production of the catalyst support and a process for hydrating C2 and C3 olefins are also described. One advantage of this catalyst support is the reduction in aluminum leaching that occurs when this catalyst is used in the presence of phosphoric acid.
Type:
Grant
Filed:
August 6, 2003
Date of Patent:
April 19, 2005
Assignee:
SASOL Germany GmbH
Inventors:
Michael Sakuth, Dietrich Maschmeyer, Gregor Lohrengel, Guido Stochniol
Abstract: The invention provides compositions and methods for inhibiting Chk1 and/or Chk2 kinases. Also provided are compositions and methods for inhibiting G2 cell arrest checkpoint, particularly in mammalian, e.g. human cells. The compositions and methods of the invention are also used to treat disorders of cell growth, such as cancer. In particular, the invention provides methods for selectively sensitizing G1 checkpoint impaired cancer cells to DNA damaging agents and treatments. Also provided are methods for screening for compounds able to interact with, e.g., inhibit, enzymes involved in the G2 cell cycle arrest checkpoint, such as Chk1 and/or Chk2/Cds1 kinase.
Abstract: The radio card of the present invention is such that corresponding unit radio cards do not have their antennas matched in configuration position to each other even if these unit radio cards are placed one over the other by inverting one relative to the other in a right/left inversion relation and in a top/down inversion relation or turning one through an angle of 180° relative to the other.
Abstract: Provided is a semiconductor device, comprising a gate electrode formed on a semiconductor substrate, source/drain diffusion layers formed on both sides of the gate electrode, a gate electrode side-wall on the side of the source/drain diffusion layer and a gate side-wall insulating film covering a part of the upper surface of the semiconductor substrate in the vicinity of the gate electrode and having an L-shaped/reversed L-shaped cross-sectional shape, and a semiconductor layer extending over the gate side-wall insulating film covering a part of the upper surface of the semiconductor substrate in the vicinity of the gate electrode.