Abstract: A computer assisted detecting and restraining system for cutting tool chatter. The system comprises a network monitor system, a signal extraction system, a chatter detection system, and a chatter restraint system. The network monitor system monitors a machine tool and receives audio caused during a cutting process. The signal extraction system extracts vibration displacement signals generated during the cutting process converts the vibration displacement signals to digital signals and transfers the digitalized signals. The chatter detection system receives the digitalized vibration displacement signals and sends a control command when the signals are high frequency signals. The chatter restraint system receives the control command and adjusts rotation rates of a spindle of the machine tool accordingly.
Abstract: A method of fabricating a semiconductor device having a trench gate is provided. First, a semiconductor substrate having a trench etch mask thereon is provided. The semiconductor substrate is etched to form a first trench having a first depth using the trench etch mask as a shield. Impurities are doped into the semiconductor substrate through the first trench to form a doped region. The doped region and the semiconductor substrate underlying the first trench are etched to form a second trench having a second depth greater than the first depth, wherein the second trench has a sidewall and a bottom. A gate insulating layer is formed on the sidewall and the bottom of the second trench. A trench gate is formed in the second trench.
Abstract: A key structure comprises a membrane circuit, a substrate, a cover and a press element. The membrane circuit comprises at least one first signal generator and a second signal generator. The substrate is disposed below the membrane circuit to support the membrane circuit. The cover comprises a body and at least one protrusion, wherein the protrusion is disposed on the body corresponding to the first signal generator. The press element is disposed on the second signal generator, wherein when force is applied on the cover, the protrusion presses the first signal generator.
Abstract: A phase change memory device comprising an electrode, a phase change layer crossing and contacting the electrode at a cross region thereof, and a transistor comprising a source and a drain, wherein the drain of the transistor electrically connects the electrode or the phase change layer is disclosed.
Type:
Grant
Filed:
December 22, 2006
Date of Patent:
May 26, 2009
Assignees:
Industrial Technology Research Institute, Powerchip Semiconductor Corp., Nanya Technology Corporation, ProMOS Technologies Inc., Winbond Electronics Corp.
Abstract: A stream data buffer device suitable for a client program comprises a buffer having N numbered sub-buffers, a buffer agent having a sub-buffer table recording a state of a corresponding sub-buffer, wherein the state comprising a first state and a second state, and a FIFO queue to record numbers of the sub-buffers having the fist state. When client program receives and stores stream data to stream data buffer, client program requests for a first sub-buffer having second state to store, and after storage, buffer agent changes the state of first sub-buffer to first state and transmits the number of the first sub-buffer to the FIFO queue. When a number of a second sub-buffer having the first state is available, the client program pops the number of second sub-buffer out of FIFO queue and accesses the data thereof, and the buffer agent changes the state of second sub-buffer to second state.
Abstract: An antenna structure includes a ground element, a first transmitting element and a second transmitting element. The first transmitting element transmits a first wireless signal, and comprises a first connecting portion and a first radiation portion. The first connecting portion is connected to the ground element and the first radiation portion. The second transmitting element transmits a second wireless signal and comprises a second connecting portion and a second radiation portion. The second connecting portion is connected to the ground element and the second radiation portion. The second connecting portion is shorter than the first connecting portion, and the second radiation portion is shorter than the first radiation portion.
Abstract: A flexible printed circuit board (FPC) with an extensible element for liquid crystal display (LCD) module is provided, wherein the extensible element can extend when it is forced. It can be used for different LCD modules to achieve the purpose of simplifying manufacturing process.
Abstract: A system for detection of gas leakage sources. An open-path FTIR detection system is located before the return filter of recirculating air of a factory to detect gas composition of recirculating air and transmits the result to a data server through a communication network. A multi-port extractive FTIR system is located in the factory to collect and detect gas sample of local area air using pipelines located in different areas and transmits the result of gas composition to the data server through the communication network. An IR monitor system obtains the gas composition from the data server through the communication network. A process exhaust management system obtains the gas composition from the IR monitor system through the communication network for the analysis of a gas leakage source.
Type:
Grant
Filed:
July 6, 2006
Date of Patent:
May 5, 2009
Assignee:
Industrial Technology Research Institute
Abstract: A light emitting diode (LED) package structure is disclosed. The LED package structure comprises a lead frame which has a chip carrier part, a pair of extended parts, a first electrode and a second electrode. The chip carrier part has an arc frame, a bulge, a first surface and a second surface. The extended part has a first side, a second side, a first top and a first bottom. The first side connects the arc frame of the chip carrier part. The arc frame electrically connects the first electrode. A heat dissipating material is placed on the second surface.
Abstract: Substrate structures for liquid crystal display devices and methods of fabricating liquid crystal display devices. A substrate structure for the liquid crystal display device comprises a transparent substrate. A patterned protrusion structure is formed to divide a plurality of pixel regions. An alignment layer is filled on the transparent substrate of each pixel region, wherein alignment orientations of liquid crystal molecules on the patterned protrusion structure and on the alignment layer are different.
Type:
Grant
Filed:
April 14, 2006
Date of Patent:
May 5, 2009
Assignee:
Industrial Technology Research Institute
Abstract: A phase-change memory and fabrication method thereof. The phase-change memory comprises a transistor, and a phase-change material layer. In particular, the phase-change material layer is directly in contact with one electrical terminal of the transistor. Particularly, the transistor can be a field effect transistor or a bipolar junction transistor.
Type:
Grant
Filed:
December 29, 2006
Date of Patent:
April 21, 2009
Assignees:
Industrial Technology Research Institute, Powerchip Semiconductor Corp., Nanya Technology Corporation, ProMOS Technologies Inc., Winbond Electronics Corp.
Abstract: Lighting devices are provided. A lighting device includes a first substrate, a second substrate, a light source and a thermoelectric cooling chip set disposed between the first and second substrates. The first substrate includes a core, a first circuit layer, and a second circuit layer, wherein the first and second circuit layers are disposed on opposite sides of the core. The second substrate comprises a third circuit layer. The light source is disposed on the first substrate and electrically connected to the first circuit layer. The thermoelectric cooling chip set is electrically connected to the second and third circuit layers, to dissipate heat from the light source.
Type:
Grant
Filed:
June 27, 2007
Date of Patent:
April 14, 2009
Assignee:
Industrial Technology Research Institute
Abstract: An antenna is provided comprising a transmission element, a ground element, a first parasitic element, a second parasitic element and a third parasitic element. The transmission element is located on a first plane, wherein the transmission element is T shaped, and comprises a first transmission portion and a second transmission portion and the second transmission portion is perpendicular to the first transmission portion and connected to an end thereof. The ground element is located on a second plane parallel to the first plane. The first parasitic element, the second parasitic element and the third parasitic element are connected to the ground element and located on the second plane.
Abstract: A boot method is implemented in a computer comprising a main memory and a storage device. A partition of the storage device comprises a first operating system and a second operating system. The partition is formatted with a first file system compatible with the first operating system. The second operating system comprises a kernel and is compatible with a second file system. When the computer boots up with the second operating system, the kernel is loaded from the partition to the main memory. A portion of the main memory is formatted with the second file system to serve as a ramdisk. The second operating system is loaded from the partition to the ramdisk.
Abstract: A split barrel structure of a hinge includes a first partial barrel and an adjoining first complementary curved part extended from a first leaf portion in a first circular direction, and a second partial barrel and an adjoining second complementary curved part extended from a second leaf portion in a second circular direction. When the first leaf portion is aligned with the second leaf portion face to face, the first partial barrel and the first complementary curved part mate with the second complementary curved part and the second partial barrel, respectively, to form a split barrel for clamping a shaft of a pintle of the hinge therein. The aligned first and second leaf portions are then bound together using binding elements. Alternatively, the first and the second leaf portion are integrally connected at an edge via a bending section.
Abstract: A power-saving circuitry of CPU is provided. The power-saving circuitry comprises a switching transistor having a first source/drain electrode being grounded, a second source/drain electrode being electrically coupled to a DC power, and a gate electrode being electrically coupled to the CPU. When the CPU is under a normal operation mode, the switching transistor is turned on. When the CPU is under a power-saving mode (such as a C3 state), the switching transistor is turned off. In addition, the present invention further comprises a diode. Wherein, an anode of the diode is electrically coupled to the second source/drain electrode of the switching transistor, and a cathode of the diode is electrically coupled to a highest bit code of the voltage identification code of the CPU, so as to output the highest bit code of the voltage identification code of the CPU.
Abstract: A projection system comprises a light source module and a light-guiding assembly. The light source module comprises a reflecting cover and a light source disposed in the reflecting cover to form a first beam with a first f-number. The light-guiding assembly comprises a body with an incident end and a lens disposed on the incident end. The first beam passes through the lens disposed on the incident end to form a second beam with a second f-number. The second f-number of the second beam is different from the first f-number of the first beam.
Abstract: A semiconductor memory device. A trench capacitor disposed at a lower portion of a trench in a substrate, in which the trench capacitor comprises a filling electrode layer and a collar dielectric layer surrounding the filling electrode layer. The top of the collar dielectric layer is lower than top surface level of the filling electrode layer. A vertical transistor is disposed at the upper portion of the trench, comprising a doped region disposed in a portion of the trench adjacent to the trench. A buried conductive layer interposed between the vertical transistor and the trench capacitor, wherein the cross section of the buried conductive layer is H shaped. The trench capacitor and the doping region of vertical transistor are electrically connected through the H shaped buried conductive layer.
Abstract: A structure of color elements for a color filter. At least a first, second, and third color element are disposed in a delta-type arrangement. An overlapping portion is formed between two adjacent color elements to serve as a light-blocking area. At least one color element is octagonal, having four straight sides and four beveled sides.
Type:
Grant
Filed:
September 23, 2004
Date of Patent:
January 6, 2009
Assignee:
TPO Displays Corp.
Inventors:
Hsin-An Cheng, Kuang-Lung Kuo, Sheng-Shiou Yeh, Tzu-Seng Yang