Abstract: In manufacturing a semiconductor device, a semiconductor body (2) is first provided with a first insulating layer (3,4) having a homogeneous dielectric thickness. A first conductor pattern (5) of polycrystalline silicon is then provided on the first insulating layer. A second insulating layer (6) is formed by oxidation of the first conductor pattern in such manner that the dielectric thickness of the first insulating layer remains approximately constant. Insulating paths (8) are then formed in spaces below edges (9) of the second insulating layer by successive deposition and etching steps. During the deposition step, a temporary layer is deposited to a thickness exceeding half the height of the spaces. During the etching step, the temporary layer is removed from the second insulating layer. Finally, a second conductor pattern (7) is provided on and beside the second insulating layer.