Abstract: An air pump has a bracket, a motor, a transmission device and pneumatic cylinder assembly. The bracket is formed from sheet metal and has a backplate, two side plates formed on the backplate and two top plates formed respectively on the side plates. The motor is mounted on the transmission device. The transmission device is mounted on the bracket and is connected to the motor. The pneumatic cylinder assembly is mounted on the bracket and is connected to the transmission device. The bracket formed from sheet metal is light and has a low cost.

Abstract: A contact structure having both a compliant bump and a testing area and a manufacturing method for the same is introduced. The compliant bump is formed on a conductive contact of the silicon wafer or a printed circuit board. The core of the bump is made of polymeric material, and coated with a conductive material. In particular, the compliant bump is disposed on the one side of the conductive contact structure that includes both the bump and the testing area, wherein the testing area allows the area to be functionality tested, so as to prevent damage of the coated conductive material over the compliant bump during a probe testing.

Abstract: The service providing system uses cooperation managers both in SIP and Web systems to process information of the SIP and HTTP protocols with SOAP/CORBA and the like as a communication protocol that can be handled in common. The service providing system thereby facilitates cooperation between the SIP and Web systems through the SPAP/CORBA network, thereby accomplishing information transfer on a real time basis.

Abstract: A phase change memory device and a method of fabricating the same are provided. A phase change material layer of the phase change memory device is formed of germanium (Ge)-antimony (Sb)-Tellurium (Te)-based Ge2Sb2+xTe5 (0.12?x?0.32), so that the crystalline state is determined as a stable single phase, not a mixed phase of a metastable phase and a stable phase, in phase transition between crystalline and amorphous states of a phase change material, and the phase transition according to increasing temperature directly transitions to the single stable phase from the amorphous state. As a result, set operation stability and distribution characteristics of set state resistances of the phase change memory device can be significantly enhanced, and an amorphous resistance can be maintained for a long time at a high temperature, i.e., around crystallization temperature, and thus reset operation stability and rewrite operation stability of the phase change memory device can be significantly enhanced.

Abstract: A method for automatic gain control of a front-end for a digital video receiver is provided. The method includes the following steps. First, a radio frequency signal is received and converted to an intermediate frequency signal. Then, the IF signal is amplified according to a gain. Next, the amplified IF signal is demodulated into a base-band signal, and the base-band signal is encoded into a transport stream. After that, a DC level of a pulse width modulation signal is controlled by at least one variable resistor to adjust the gain, the PWM signal being related to a setting of the gain. Afterwards, a BER measurement at each potential setting of the gain and the variable resistor under one or more power levels of the RF signal is read, and an optimum setting of the gain and the variable resistor is selected according to the BER measurements.

Abstract: A nitride semiconductor device includes a semiconductor substrate; a first nitride semiconductor layer provided on the semiconductor substrate; a mask layer having opening portions, provided on the first nitride semiconductor layer; a second nitride semiconductor layer selectively grown on the mask layer laterally from the opening portions; and a semiconductor lamination portion formed by laminating nitride semiconductor layers so as to form a semiconductor element on the second nitride semiconductor layer. The substrate may be made of a zinc-based compound, the first nitride semiconductor layer may be provided on, and in contact with, the substrate, and at least a substrate side of the first nitride semiconductor layer may be made of AlyGa1-yN (0.05?y?0.2). Additionally, the semiconductor element may be a light emitting layer in which case the mask layer may include a metal film provided on the first nitride semiconductor layer and an insulating film provided on the metal film.

Abstract: A table including a tabletop and numbers of legs. A number of connecting positions for connecting with the legs are arranged in a bottom surface of the tabletop. The legs are connected with the connecting positions and extend transversely from the tabletop. The connecting positions and the upper ends of the legs are connected together by screw threads. Each of the legs include a recessed tool receptacle for receiving a tool to rotate the legs.

Abstract: The present invention relates to a dielectric resonator antenna (DRA) with bending metallic planes. The ground plane of the dielectric resonator antenna is bent around the DRA to increase the half-power beam width (HPBW) and the gain on H-plane, moreover, to improve the pattern on E-plane. The ground plane of the invention is further bent in different angles to reshape the radiation pattern of the dielectric resonator antenna, and a well is carved in the dielectric resonator antenna to increase its radiation bandwidth. The invention can also be adjusted as WiMAX sectorial antenna.

Abstract: Provided is a loop type micro heat transport device including: a lower plate having a reservoir for storing operating fluid at its upper surface, an evaporating part spaced apart from the reservoir to evaporate the operating fluid, and a condensing part for condensing vapor evaporated from the evaporating part; and an upper plate engaged with an upper surface of the lower plate and formed at a position corresponding to the evaporating part and the condensing part, and including a vapor space having a vapor line through which the vapor evaporated from the evaporating part is transported to the condensing part, wherein the operating fluid is circulated through the reservoir, the evaporating part, and the condensing part. Therefore, it is possible to remarkably improve productivity since its simple structure helps to make the manufacture simple, as well as to improve cooling performance and enabling long distance heat transport.

Abstract: A controlling circuit for a communication port having a ring indicator (RI) pin is provided. The controlling circuit includes a first selection circuit and a second selection circuit. The first selection circuit is controlled by a basic input/output system (BIOS) for determining whether an RI signal is transmitted to the RI pin. The second selection circuit is controlled by the BIOS for determining whether a first voltage or a second voltage is transmitted to the RI pin.

Abstract: Provided is a bi-directional optical module including: a transmission optical element including an SOA (semiconductor optical amplifier) aligned on an optical axis of an LD (laser diode) formed on a substrate; and a reception optical element comprising a PD (photodiode) including a light receiving surface perpendicular to the optical axis of the LD of the transmission optical element.

Abstract: Provided are a semiconductor device with a T-gate electrode capable of improving stability and a high frequency characteristic of the semiconductor device by reducing source resistance, parasitic capacitance, and gate resistance and a method of fabricating the same. In the semiconductor device, in order to form source and drain electrodes and the T-gate electrode on a substrate, first and second protective layers constructed with silicon oxide layers or silicon nitride layers are formed on sides of a supporting part under a head part of the T-gate electrode, and the second protective layer constructed with a silicon oxide layer or silicon nitride layer is formed on sides of the source and drain electrodes. Accordingly, it is possible to protect an activated region of the semiconductor device and reduce gate-drain parasitic capacitance and gate-source parasitic capacitance.

Abstract: As an example of a nitride semiconductor light emitting device, on a sapphire substrate, a GaN buffer layer, an n-type GaN contact layer, an MQW active layer, and a p-type GaN contact layer are sequentially stacked, and a partial region from the p-type GaN contact layer to the middle of the n-type GaN contact layer is mesa-etched so as to form an n electrode. Meanwhile, a p electrode is provided on the p-type GaN contact layer, and, in addition to the p electrode, multiple ridge parts are formed by crystal growth so as to be scattered. By providing the multiple ridge parts, device characteristics can be improved without causing damage on the GaN-based semiconductor layer.

Abstract: An electronic device and an antenna module thereof are provided. The electronic device includes a plurality of electronic elements and the antenna module. The antenna module includes a radiating body and a grounding body. The grounding body covers the electronic elements for being a shielding casing. A radio frequency resonance is formed between the radiating body and the grounding body.

Abstract: In order to provide an intelligent building having specific rooms in which relatively less wealthy persons may use, and meeting the demands for specific rooms and privacy for the general public at the same time, by optimizing the space efficiency.

Abstract: A radio network system and a control node switching method which can improve a reliability of the whole network and improve a wording efficiency. The system includes at least one alternate control node which can be substituted form the control node. The alternate control node monitors an operating state in the control node and discriminates whether or not the operating state is abnormal. When the operating state is determined to be abnormal, the alternate control node sets its own address into a control node address.

Abstract: An OTDM-DPSK signal generator includes an optical splitter, a first and a second phase modulator, an optical coupler, and a monitor signal splitter. The optical splitter splits an optical pulse string into a first and a second optical pulse string. The first and second phase modulators generate a first and a second channel DPSK signal, respectively. The DPSK signals are provided with one bit delay to generate another DPSK signal, which enters the optical coupler, which outputs an OTDM-DPSK signal, which enters a monitor signal splitter. The monitor signal splitter splits from the OTDM-DPSK signal a monitor signal and inputs the monitor signal to an optical carrier phase difference detector. The detector generates an optical carrier phase difference detection signal as a function of an optical carrier phase difference between optical pulses. The optical carrier phase difference can thus be detected between optical pulses in an OTDM-DPSK signal.

Abstract: An organic semiconductor light-emitting device having the form of a field-effect transistor and a display using this device is provided. In the device, electrons and holes can be transported. The device comprises an organic semiconductor light-emitting layer capable of emitting light by recombination of holes and electrons, a hole injection electrode for injecting holes into the organic semiconductor light-emitting layer, an electron injection electrode for injecting electrons into the organic semiconductor light-emitting layer, and a gate electrode so disposed as to be opposed to the organic semiconductor light-emitting layer between the electrodes. When a control voltage is applied to the gate electrode, the carrier distribution in the organic semiconductor light-emitting layer is controlled. Thus, the light emission can be turned on/off and the emission intensity can be modulated.