Abstract: A semiconductor chip (26) is attached to a leadframe (20, 30, 40). The leadframe (20, 30, 40) has an opening (24) or a cavity (34, 44) for receiving the semiconductor chip (26). The opening (24) or the cavity (34, 44) and the semiconductor chip (26) have corresponding shapes. The opening (24) or the cavity (34, 44) is made such that they are smaller than the size of the semiconductor chip (26) at room temperature. The opening (24) or the cavity (34, 44) is expanded and the semiconductor chip (26) is placed in the opening (24) or the cavity (34, 44). Subsequent to placing the semiconductor chip (26) in the opening (24) or the cavity (34, 44), the leadframe (20, 30, 40) is cooled so that an edge (25) of the leadframe grips a corresponding edge (29) of the semiconductor chip (26).

Abstract: A method of decoupling a step for modulating a defect density from a step for modulating a junction depth. A semiconductor substrate (30) having a portion doped with a dopant (34) is heated to a pre-oxidation anneal temperature in a pre-oxidation anneal step (23). After the pre-oxidation anneal step (23), the semiconductor substrate (30) undergoes an oxidation step (25) which serves as a step for modulating the defect density. Subsequent to the oxidation step (25), the semiconductor substrate (30) undergoes a drive-in step (27) which serves as a step for modulating the junction depth. Then, the temperature of the semiconductor substrate (30) is lowered to allow further processing of the semiconductor substrate (30).

Abstract: A monolithic optoelectronic integrated circuit having an optical emission portion (18) and a drive portion (11, or 22 and 21). The drive portion is capable of accepting TTL and standard CMOS logic voltage levels. In a first embodiment, the monolithic optoelectronic integrated circuit (10) has a light emitting diode (18) driven by a dual gate FET (11). In a second embodiment, the monolithic optoelectronic integrated circuit (20) has a light emitting diode (18) driven by two FETs (22 and 21). In each embodiment (10 or 20), a gate (13 or 23) of the respective drive circuit accepts the TTL or standard CMOS logic voltage. Further, in each embodiment current limiting is accomplished by coupling a gate with the source of the FET (11 or 22). Thus, the output of the light emitting diode (18, 18) is controlled by an input signal to the drive circuit.

Abstract: An apparatus (19) for singulating a series of packages (17). The apparatus (19) includes a vertical wheel (12), a retainer spring (10), a gravity feed track (14), a pass track (15), and a reject track (16). The vertical wheel (12) comprises a plurality of slots (22-29), and rotates in a clockwise direction to deliver the packages (17) to an electrical test fixture (18). Upon completion of testing, the vertical wheel (12) rotates in a clockwise direction and delivers the packages (17) to either the pass track (15) or the reject track (16). A motor driven eccentric (37) actuates the retainer spring (10) to unblock the appropriate slot (22-29), thereby releasing the packages (17) from the appropriate slot (22-29).