Abstract: A method inhibits metal silicide encroachment in channel regions in a transistor that uses metal silicide as an electrical contact to its terminals. A metal layer is deposited overlying the transistor. A first anneal that is a low temperature anneal forms metal silicide regions to source, gate and drain terminals of the transistor. The low temperature inhibits lateral encroachment. Unsilicided portions of the metal are removed and followed by an ion implant of an element, such as nitrogen, that diffuses into the metal silicide regions. A second anneal at a higher temperature than the first anneal is completed wherein the implanted nitrogen ions prevent lateral encroachment of metal silicide.

Abstract: A transistor (10) is formed having three separately controllable gates (44, 42, 18). The three gate regions may be electrically biased differently and the gate regions may have different conductivity properties. The dielectrics on the channel sidewall may be different than the dielectrics on the top of the channel. Electrical contacts to source, drain and the three gates is selectively made. By including charge storage layers, such as nanoclusters, adjacent the transistor channel and controlling the charge storage layers via the three gate regions, both volatile and non-volatile memory cells are realized using the same process to create a universal memory process. When implemented as a volatile cell, the height of the transistor and the characteristics of channel sidewall dielectrics control the memory retention characteristics. When implemented as a nonvolatile cell, the width of the transistor and the characteristics of the overlying channel dielectrics control the memory retention characteristics.

Abstract: Two or more semiconductor packages are stacked with an intervening element that is positioned between within an area surrounded by conductive bumps of a bottom surface of the overlying package. Different shapes of the intervening element are used depending upon how many sides of the bottom surface have conductive bumps. In one form the intervening element extends laterally from the stack and is bent downward to contact or extend through an underlying substrate. Contact to the intervening element at the backside of the substrate may be made. In another form the intervening element is bent upward for enhancing thermal properties. The intervening element is adhesive to prevent non-destructive removal of the packages thereby adding increased security for information contained within the packages. Selective electrical shielding between packages is also provided.

Abstract: A data processing system has a single configurable write buffer within a peripheral interface unit that is shared among multiple peripherals. Configuration registers are dynamically programmed to control criteria for determining whether control of a system bus will be released prior to completion of a write access to a peripheral. The criteria include which peripheral is being accessed, the particular bus master that is requesting the write request, and a mode of operation, such as supervisor or user write access modes. Write buffering may also be dynamically disabled for individual peripherals based on the state of a peripheral by using a hardware side band signal driven by the peripheral to override a static buffer write policy programmed in control registers.

Abstract: In one embodiment, a method of forming a nanocluster charge storage device is provided. A first region of a semiconductor device is identified for locating one or more non-charge storage devices. A second region of the semiconductor device is identified for locating one or more charge storage devices. A gate oxide to be used as a gate insulator of the one or more non-charge storage devices is formed in the first region of the semiconductor device, and a nanocluster charge storage layer is subsequently formed in the second region of the semiconductor device. This may allow for improved integration of charge storage and non-charge storage devices. For example, since the nanoclusters are formed after formation of the gate oxide for the non-charge storage device, the nanoclusters are not exposed to an oxidizing ambient which could potentially reduce their size and increase the thickness of the underlying tunnel dielectric layer.

Abstract: In order to protect against adjacent channel interference and the effects of weak signal in AM signal processing, pre- and post-AM demodulation filters (36 and 38) may be used where the bandwidth of both is varied in the same manner by a single controlling mechanism (34). In one embodiment, two or more cascaded filters (20, 24 or 22, 26 or 30,32) may be used for the pre- and post-demodulation filters where each of the cascaded filters has a same predetermined order and uses the same set of coefficients. In one embodiment, all cascaded filters are first order IIR filters, which reduces computation complexity. The use of a same set of coefficient for all the cascaded filters results in a same bandwidth for all filters and further reduces computation complexity. In an alternate embodiment, cascaded filters may be used for only one of the pre- and post-demodulator filters.

Abstract: A plurality of memory cell devices is formed by using an intermediate dual polysilicon-nitride control electrode stack overlying nanoclusters. The stack includes a first-formed polysilicon-nitride layer and a second-formed polysilicon-containing layer. The second-formed polysilicon-containing layer is removed from areas containing the plurality of memory cells. In one form the second-formed polysilicon-containing layer also contains a nitride portion which is also removed, thereby leaving the first-formed polysilicon-nitride layer for the memory cell devices. In another form the second-formed ploysilicon-containing layer does not contain nitride and a nitride portion of the first-formed polysilicon-nitride layer is also removed. In the latter form a subsequent nitride layer is formed over the remaining polysilicon layer. In both forms a top portion of the device is protected from oxidation, thereby preserving size and quality of underlying nanoclusters.

Abstract: A polishing carrier head including a retaining ring for defining an area of a polishing pocket region used to polish a predetermined object, is provided. The polishing carrier head may further include a perforated plate positioned lateral to the retaining ring, the perforated plate having a plurality of perforations for permitting fluid flow. The polishing carrier head may further include a flexible membrane having a first region overlying a portion of the retaining ring and the perforated plate and a second region in which a first portion of the flexible membrane overlies a second portion of the flexible membrane to form one or more bellows. The polishing carrier head may further include an edge support ring in contact with the first region of the flexible membrane for clamping the first region of the flexible membrane to the perforated plate.

Abstract: A method for forming a semiconductor device (10) creates a dielectric layer (18) with high dielectric constant. An interfacial layer (14) is formed over a semiconductor substrate (12). A dielectric layer (16) is formed over the interfacial layer, wherein the dielectric layer has a high dielectric constant (K). The dielectric layer is thinned, such as by etching or chemical mechanical polishing, wherein a thickness of the thinned dielectric layer is less than a thickness of the dielectric layer prior to thinning. In one form, the method is used to form a transistor having a gate electrode layer formed over the thinned dielectric layer and source/drain diffusions (24, 26) within the semiconductor substrate.

Abstract: A semiconductor device (10) is formed by positioning a gate (22) overlying a semiconductor layer (16) of preferably silicon. A semiconductor material (26) of, for example only, SiGe or Ge, is formed adjacent the gate over the semiconductor layer and over source/drain regions. A thermal process diffuses the stressor material into the semiconductor layer. Lateral diffusion occurs to cause the formation of a strained channel (17) in which a stressor material layer (30) is immediately adjacent the strained channel. Extension implants create source and drain implants from a first portion of the stressor material layer. A second portion of the stressor material layer remains in the channel between the strained channel and the source and drain implants. A heterojunction is therefore formed in the strained channel. In another form, oxidation of the stressor material occurs rather than extension implants to form the strained channel.

Abstract: A system (10) uses shared resources (44, 54) to perform conventional load/store operations, to preload custom data from external sources, and to efficiently manage error handling in a cache (42, 52, 48). A reload buffer (44, 54) is used in conjunction with a cache (42, 52) operating in a write-through mode to permit lower level memory in the system to operate in a more efficient write-back mode. A control signal (70) selectively enables the pushing of data into the cache (42, 52, 48) from an external source. The control signal utilizes one or more attribute fields that provide functional information and define memory characteristics.

Abstract: A semiconductor package uses various forms of conductive traces that connect to die bond pads via bond wires. In one form, adjacent bond wires are intentionally crossed around midpoints thereof to reduce self-inductance of the conductors and to minimize self-inductance. In another form, bond wires associated with bond pads having intervening, unrelated bond pads are crossed. Additionally, conductive traces are divided into separate sections and electrically connected by crossed jumper wires or bond wires. Any number of separate sections may be formed for each trace, but an even number is preferable. In another form, one trace is continuous and divides a second trace into two or more sections. The multiple sections are connected by an overlying bond wire. Either insulated or non-insulated bond wire may be used.

Abstract: A single memory array (10) has an isolation circuit for isolating segments of a same bit line (Seg1 BL0, Seg2 BL0) from each other. The isolation circuit (16) permits memory cells located in one segment (12) of an array to be read while memory cells of another segment (14) of the array are being erased. In one example, the isolation circuit (16) electrically couples the segments during a read or program of memory cells located on the second segment (Seg2 BL0). Program information stored in the single memory array may always be accessed while a portion of the same array is erased. Dynamic variation of the size of the isolated bit line segment occurs when multiple isolation circuits are used to create more than two array segments.

Abstract: A circuit and method of operation compensates for current pulses on a regulated voltage of a voltage supply. The regulated voltage supply is coupled to a plurality of loads that are enabled by a first set of control signals. The enable loads place current pulses having a predetermined plurality on the regulated voltage supply. A second set of control signals enable compensation circuitry to place current pulses of an opposite polarity on the regulated voltage supply. The loads are mimicked to generate a signal that approximates a current pulse length of the enabled loads. Another circuit generates a pulse that approximates a current pulse amplitude of the pulse caused by the enabled loads. By generating compensating pulses of opposite polarity having similar duration and amplitude as the pulses caused by the switching loads, the regulated voltage is more accurately maintained.

Abstract: An arbitration control circuit (11) for arbitrating access to a slave device (4) by a plurality of master devices (2, 3) includes an undefined length burst (ULB) arbitration logic circuit (12). The ULB arbitration logic circuit (12) includes a counter (26) and a control register (24). The control register (24) stores a predetermined value. During a ULB access of the slave device (4), the counter (26) is loaded with the predetermined value and is decremented for each beat of the undefined length burst access. Arbitration of the slave device (4) is only allowed after the predetermined number of access beats during the undefined length burst access.

Abstract: A micro-electromechanical (MEM) device has a folded tether spring in which each fold of the spring is surrounded by a rigidly fixed inner structure and outer structure. The fixed inner structure increases restoring force of the spring. The rigidly fixed inner and outer structures each have a major surface that include a plurality of notches of fixed width relative to a distance between the major surface and the spring. Additionally in one form extensions from the major surface of the rigidly fixed inner and outer structures are provided at distal ends thereof to make initial contact with the spring. The notches of the MEM device both reduce surface area contact with the spring and wick moisture away from the spring to minimize stiction.

Abstract: A system and method in a communication device (10) uses timing tracking to correct timing drifting due to the difference in frequency of a transmitter clock and a receiver clock. With the timing tracking, correlation values of three consecutive samples are calculated using the receive signal and the recovered symbols and then summed. A timing signal, (nk, frack) is updated based upon a metric calculated from a previous correlation value, R?1, present correlation value (R0) and a next con-elation value (R+1). Adjustment of timing signal is based on the relative location with respect to the current timing of a peak of a second order polynomial curve formed by the first correlation value R?1, the second correlation value R0 and the third correlation value R+1.

Abstract: A semiconductor package uses various forms of conductive traces that connect to die bond pads via bond wires. In one form, adjacent bond wires are intentionally crossed around midpoints thereof to reduce self-inductance of the conductors and to minimize self-inductance. In another form, bond wires associated with bond pads having intervening, unrelated bond pads are crossed. Additionally, conductive traces are divided into separate sections and electrically connected by crossed jumper wires or bond wires. Any number of separate sections may be formed for each trace, but an even number is preferable. In another form, one trace is continuous and divides a second trace into two or more sections. The multiple sections are connected by an overlying bond wire. Either insulated or non-insulated bond wire may be used.

Abstract: Photoresist on a wafer is exposed using tiles on a mask that improve flare performance. Features that are not to be exposed on the photoresist correspond to features on the mask. The various features are surrounded by other features that vary and thus affect flare differently. Selected features have tiles added nearby but also far enough away to improve uniformity in the effects of flare on the various features that are intended to be present in the photoresist. The tiles are made either very small in width or partially absorbing so that the tiles are not resolved in the photoresist. Thus the tiles reduce flare but do not alter the desired pattern in the photoresist.

Abstract: A metal-containing semiconductor layer having a high dielectric constant is formed with a method that avoids inclusion of contaminant elements that reduce dielectric constant of metals. The metal-containing semiconductor layer is formed overlying a substrate in a chamber. A precursor is introduced to deposit at least a portion of the metal-containing semiconductor layer. The precursor contains one or more elements that, if allowed to deposit in the metal-containing layer, would become impurity elements. A reactant gas is used to purify the metal-containing layer by removing impurity elements from the metal-containing layer which were introduced into the chamber by the precursor.