Abstract: A method for offset compensation of a signal processing circuit in whose signal path a circuit configuration with offset is disposed, wherein the circuit configuration with offset is temporarily decoupled from the signal path of the signal processing circuit and meanwhile held strictly in a dc mode; a compensating dc voltage is added to the output dc voltage occurring at the output of the circuit configuration with offset in the dc mode, said compensating dc voltage being varied until the cumulative value of output dc voltage and compensating dc voltage has became zero; the circuit configuration with offset is then coupled into the signal path again; andfrom then on the compensating dc voltage occurring at the cumulative value zero is permanently added to the output signal of the circuit configuration with offset until a new offset compensating process is performed.

Abstract: The process comprises the steps of: forming a through hole from the back of a semiconductor material body; forming a hole insulating layer of electrically isolating material laterally covering the walls of the through hole; forming a through contact region of conductive material laterally covering the hole insulating layer inside the hole and having at least one portion extending on top of the lower surface of the body; forming a protective layer covering the through contact region; and forming a connection structure extending on top of the upper surface of the body between and in electrical contact with the through contact region and the electronic component.

Abstract: A circuit device programs non-volatile memory cells having a single voltage supply, wherein each cell comprises a floating gate transistor having source and drain terminals and a control gate terminal, with the drain terminal being supplied a program voltage from a voltage booster circuit. The device includes a means of supplying a constant drain current to the drain terminal of the memory cell; an element for sampling the drain current drawn through the cell; and a means of voltage feedback driving the control gate terminal of the cell according to the sampled value of the drain current.

Abstract: In a fully integrated logarithmic amplifier, an input current is fed via a diode, and in a reference current branch parallel thereto, a constant current flows through a similar diode. A voltage divider forms of the differential voltage between the two diodes a partial voltage on a variable resistor of the voltage divider, which is processed by a differential amplifier for forming the output signal. Parallel to the two current branches mentioned, there is provided an additional current branch having a constant current source and a diode. The differential voltage between the diode of the reference current branch and the diode in the additional current branch is also divided by a voltage divider. A differential amplifier forms of the voltage on the variable resistor of the voltage divider an error signal which changes the variable resistance from which the differential amplifier has formed the error signal as well as the resistance fo the variable resistor of which the output signal is formed.

Abstract: An electronic memory device organized into sections which are in turn divided into blocks formed of cells and their associated decoding and addressing circuits, the cells being connected in a predetermined circuit configuration and each block being included between two opposite contact regions which are interconnected by parallel continuous conduction lines referred to as the bit lines. In the present invention, at least one interruption is provided in each bit line near a contact region by inserting a controlled switch which functions as a block selector. Advantageously, the proposed solution allows each block to be isolated individually by enabling or disabling as appropriate the switches of the cascade connected blocks.

Abstract: The present invention relates to a power output stage for the control of plasma screen cells. It includes VDMOS-type N-channel charge and discharge transistors, the charge transistor being arranged to form a compound P-channel transistor. These transistors enable to issue a charge current to an output and to absorb a discharge current from this output. Two inverters are sized so that the potential of the control gate of the charge transistor drops more rapidly than the output potential when a discharge of this output is controlled. Thus, an output stage of limited bulk and without any risk of simultaneous conduction of the charge and discharge transistors is implemented.

Abstract: A dividing circuit comprises, connected in a ring, a plurality M of transistor stages, where M is an even integer. Each transistor stage comprises an input node, a clock node and an output node. A tri-state inverter stage has an input node connected to the output node of a preceding transistor stage in the ring, an enable node connected to the clock nodes of the transistor stages, and an output node connected to the input node of a subsequent transistor stage in the ring.

Abstract: The row decoder includes a predecoding stage supplied with row addresses and generating predecoding signals; and a final decoding stage, which, on the basis of the predecoding signals, drives the individual rows in the array. The predecoding stage includes a number of predecoding circuits presenting two parallel signal paths: a low-voltage path used in read mode, and a high-voltage path used in programming mode. A CMOS switch separates the two paths, is driven by high voltage via a voltage shifter in programming mode, and, being formed at predecoding level, involves no integration problems.

Abstract: A DC/DC conversion circuit, adapted to convert a DC input voltage to a DC output voltage, employs a PNP type of bipolar power transistor as a synchronous rectifier element, to allow power-on through a simplified control circuitry capable of sensing, automatically and at a high speed, the difference of potential across the switch. This approach allows power to be transferred from the input to the output unilaterally, while automatically controlling the depth of saturation of the power transistor and regulating its base current.

Abstract: A sensor having high sensitivity is formed using a suspended structure with a high-density tungsten core. To manufacture it, a sacrificial layer of silicon oxide, a polycrystal silicon layer, a tungsten layer and a silicon carbide layer are deposited in succession over a single crystal silicon body. The suspended structure is defined by selectively removing the silicon carbide, tungsten and polycrystal silicon layers. Then spacers of silicon carbide are formed which cover the uncovered ends of the tungsten layer, and the sacrificial layer is then removed.

Abstract: The controlled erase method includes supplying at least one erase pulse to cells of a memory array; comparing the threshold voltage of the erased cells with a low threshold value; selectively soft-programming the erased cells which have a threshold voltage lower than the low threshold value; and verifying whether the erased cells have a threshold voltage lower than a high threshold value, which is higher than the low threshold value. If at least one predetermined number of erased cells has a threshold voltage which is higher than the high threshold value, an erase pulse is applied to all the cells and the steps of comparing, selectively soft-programming and verifying are repeated.

Abstract: The invention relates to a method of automatically shifting from the fabrication of an EPROM cell to the fabrication of a ROM cell, which method is specifically intended for semiconductor electronic circuits having a resident memory and is of the type wherein the structure of at least one memory cell transistor is defined on a semiconductor substrate using photolithographic techniques including an active area and a channel region, the cell being adapted to acquire a logic state selected by the user. Advantageously, the conductivity of the active area is changed to suit the logical contents that the cell is intended to contain.

Abstract: A control circuit comprises a plurality of input terminals and an output terminal for biasing a floating well in a semiconductor integrated circuit structure. The control circuit also includes a first transistor which has its conduction terminals connected between a first input terminal and an output terminal, and a second transistor which has its conduction terminals connected between a second input terminal and the output terminal. The control circuit further includes a regulator coupling the output terminal to each of the control terminals of said first and second transistors.

Abstract: A device for analog programming is disclosed. The device comprises a current mirror circuit connected to drain terminals of a cell to be programmed and of a MOS reference transistor. An operational amplifier has inputs connected to the drain terminals of the cell and respectively of the MOS transistor and an output connected to the control terminal of the MOS transistor. During programming, the control and drain terminals of the cell are biased at corresponding programming voltages and the output voltage of the operational amplifier, which is correlated to the current threshold voltage level of the cell, is monitored and the programming is interrupted when this output voltage becomes at least equal to a reference voltage correlated to the threshold value desired for the cell.

Abstract: A method and a circuit generate a pulse synchronization signal (ATD) for timing the memory cell read phase in semiconductor integrated electronic memory devices. The pulse signal (ATD) is generated upon detection of a change in logic state of at least one of a plurality of address input terminals of the memory cells. The method consists of duplicating the ATD signal into at least one pair of signals and propagating such signals through separate parallel timing chains at the ends of which the ATD signal is reinstated, the chains being alternately active.

Abstract: An output current unit comprises a cascode circuit having a first transistor connected between a voltage supply line and complementary outputs. Second and third transistors are controlled by inverter circuitry having parallel conducting paths between an output node and a ground line, the parallel conducting paths having different current carrying capacity with control circuitry to switch the stronger of the current carrying paths.

Abstract: A protection circuit for a power supply line in a semiconductor device, comprising first and second field-effect transistors, both transistors having their respective drain terminals connected to the power supply line. The gate source terminals of the first transistor are connected to ground through first and second resistors, respectively. The gate and source terminals of the second transistor are connected to the source terminal of the first transistor and to ground, respectively.

Abstract: A memory device comprising a semiconductor material substrate with a dopant of a first type; a first semiconductor material well with a dopant of a second type formed in the substrate; a second semiconductor material well with a dopant of the first type formed in said first well; an array of memory cells formed within said second well. Each memory cell comprises a first electrode and a second electrode respectively formed by a first and a second doped regions with dopant of the second type formed in said second well, and a control gate electrode.

Abstract: The invention relates to a dynamic sense amplifier, particularly for semiconductor memory devices of the EPROM, EEPROM and Flash-EPROM types, which includes a virtual ground sense circuit having a pair of output nodes, an equilibration device for equalizing the voltages at the output nodes, and respective reference and matrix circuit legs associated with the output nodes and being led to respective input terminals, the sense amplifier also includes a bias circuit portion for biasing the input terminals. The inventive amplifier distinguishes itself in that the sense circuit and equilibration device are driven by respective signals to generate a predetermined differential voltage between the output nodes before the sense circuit is activated.

Abstract: The programming method comprises the steps of applying a programming pulse to a first cell and simultaneously verifying the present threshold value of at least a second cell; then verifying the present threshold value of the first cell and simultaneously applying a programming pulse to the second cell. In practice, during the entire programming operation, the gate terminal of both the cells is biased to a same predetermined gate voltage and the source terminal is connected to ground; the step of applying a programming pulse is carried out by biasing the drain terminal of the cell to a predetermined programming voltage and the step of verifying is carried out by biasing the drain terminal of the cell to a read voltage different from the programming voltage. Thereby, switching between the step of applying a programming pulse and verifying is obtained simply by switching the drain voltage of the cells.