Abstract: A method for forming a microcrystalline semiconductor film over a base formed of a different material, which has high crystallinity in the entire film and at an interface with the base, is proposed. Further, a method for manufacturing a thin film transistor including a microcrystalline semiconductor film with high crystallinity is proposed. Furthermore, a method for manufacturing a photoelectric conversion device including a microcrystalline semiconductor film with high crystallinity is proposed. By forming crystal nuclei with high density and high crystallinity over a base film and then growing crystals in a semiconductor from the crystal nuclei, a microcrystalline semiconductor film which has high crystallinity at an interface with the base film, which has high crystallinity in crystal grains, and which has high adhesion between the adjacent crystal grains is formed.

Abstract: There is provided a method of removing trap levels and defects, which are caused by stress, from a single crystal silicon thin film formed by an SOI technique. First, a single crystal silicon film is formed by using a typical bonding SOI technique such as Smart-Cut or ELTRAN. Next, the single crystal silicon thin film is patterned to form an island-like silicon layer, and then, a thermal oxidation treatment is carried out in an oxidizing atmosphere containing a halogen element, so that an island-like silicon layer in which the trap levels and the defects are removed is obtained.

Abstract: The invention relates to a laser treatment apparatus including a laser oscillator, an interlock provided in the laser oscillator, a movable table which moves with a certain movement period, a timer, an interlock provided in the timer, a sensor which can detect movement of the movable table, and a computer, in which the timer starts measuring time when the sensor senses passage of the movable table, and when the movable table does not pass the sensor even after the movement period, conduction between contacts of the interlock provided in the timer is blocked to operate the interlock in the laser oscillator, thereby stopping laser output. The invention also relates to a laser treatment method using the laser treatment apparatus.

Abstract: A display device includes a main body, a support stand, and a display portion. The display portion includes a pixel having a TFT and a capacitor. The capacitor includes a capacitor electrode on an insulating surface, an insulating film on the capacitor electrode, and a pixel electrode of the TFT on the insulating film.

Abstract: As a display device has higher definition, the number of pixels is increased and thus, the number of gate lines and signal lines is increased. When the number of gate lines and signal lines is increased, it is difficult to mount IC chips including driver circuits for driving the gate lines and the signal lines by bonding or the like, whereby manufacturing cost is increased. A pixel portion and a driver circuit for driving the pixel portion are provided on the same substrate, and at least part of the driver circuit comprises a thin film transistor including an oxide semiconductor sandwiched between gate electrodes. A channel protective layer is provided between the oxide semiconductor and a gate electrode provided over the oxide semiconductor. The pixel portion and the driver circuit are provided on the same substrate, which leads to reduction of manufacturing cost.

Abstract: It is an object to provide a flexible light-emitting device with long lifetime in a simple way and to provide an inexpensive electronic device with long lifetime using the flexible light-emitting device. A flexible light-emitting device is provided, which includes a substrate having flexibility and a light-transmitting property with respect to visible light; a first adhesive layer over the substrate; an insulating film containing nitrogen and silicon over the first adhesive layer; a light-emitting element including a first electrode, a second electrode facing the first electrode, and an EL layer between the first electrode and the second electrode; a second adhesive layer over the second electrode; and a metal substrate over the second adhesive layer, wherein the thickness of the metal substrate is 10 ?m to 200 ?m inclusive. Further, an electronic device using the flexible light-emitting device is provided.

Abstract: Light-emitting elements have a problem that their light-extraction efficiency is low due to scattered light or reflected light inside the light-emitting elements. The light-extraction efficiency of the light-emitting elements needs to be enhanced by a new method. According to the present invention, a light-emitting element includes a first layer generating holes, a second layer including a light-emitting layer for each emission color and a third layer generating electrons between an anode and a cathode, and the thickness of the first layer is different depending on each layer including the light-emitting layer for each emission color. A layer in which an organic compound and a metal oxide are mixed is used as the first layer, and thus, the driving voltage is not increased even when the thickness is increased, which is preferable.

Abstract: The present invention provides a radio field intensity measurement device having a display portion with improved visibility, in the case of measuring a weak radiowave from a long distance. In the radio field intensity measurement device, a battery is provided as a power source for power supply and the battery is charged by a received radiowave. When a potential of a signal obtained from the received radiowave is higher than an output potential of the battery, the power is stored in the battery. On the other hand, when the potential of the signal obtained from the received radiowave is lower than the output potential of the battery, power produced by the battery is used as power to drive the radio field intensity measurement device. As an element to display the radio field intensity, a thermochromic element or an electrochromic element is used.

Abstract: In the case where a digital camera is used for evaluating a display quality of an image display panel, moire is generated due to a shift of a pixel pitch between a pixel of a panel and a pixel of a digital camera, and thus, a great influence is given as measurement deviation. The present invention carries out a panel display quality evaluation at low cost and short time with relieved influence of moire by treating a value, which is obtained by recognizing a coordinate of a panel pixel in a shot image based on an image for detecting a coordinate and positional information thereof with high accuracy and by calculating average luminance by panel pixel unit based on a center position of a coordinate, as representative luminance in each pixel of the panel, in a panel evaluation method of shooting an image display panel with a digital camera.

Abstract: To improve field effect mobility of an inverted-staggered TFT using amorphous silicon. In an inverted-staggered TFT, a thin amorphous semiconductor layer which is made to have n-type conductivity is formed between a gate insulating film and an amorphous semiconductor layer. By depositing an amorphous semiconductor layer after a substrate over which up to a gate insulating film is formed is exposed to an atmosphere which contains a phosphine gas in a small amount, an amorphous semiconductor layer which contains phosphorus is formed during the early stage of deposition of the amorphous semiconductor layer. The thus obtained amorphous semiconductor layer has the concentration peak of phosphorus around the surface of the gate insulating film.

Abstract: Provided is a manufacturing method to prevent devitrification of a bulb in a high pressure discharge lamp used for a projector. The method is for manufacturing a high pressure discharge lamp which uses, as a light source, a bulb made of fused quartz and including a tungsten electrode, and which is horizontally installed when the lamp is driven for actual use. The method includes the step of initially driving the bulb with an optical axis thereof being set horizontally before the high pressure discharge lamp is shipped. In the initial driving step, the rotation angle around the optical axis of the bulb is offset by 45° or more and 135° or less relative to the rotation angle around the optical axis of the bulb when the lamp is driven for actual use.

Abstract: In an organic field effect transistor, including, on a substrate having an insulating surface, at least a gate electrode, a gate insulating film formed in contact with the gate electrode, an organic semiconductor film formed in contact with the gate insulating film, and at least a pair of source-drain electrodes formed in contact with the organic semiconductor film, a carrier generating electrode to which carriers can be injected in response to a gate signal is implanted within the organic semiconductor film.

Abstract: A hydrogen barrier layer is selectively provided over an oxide semiconductor layer including hydrogen and hydrogen is selectively desorbed from a given region in the oxide semiconductor layer by conducting oxidation treatment, so that regions with different conductivities are formed in the oxide semiconductor layer. After that, a channel formation region, a source region, and a drain region can be formed with the use of the regions with different conductivities formed in the oxide semiconductor layer.

Abstract: A light-emitting element is disclosed that can drive at a low driving voltage and that has a longer lifetime than the conventional light-emitting element, and a method is disclosed for manufacturing the light-emitting element. The disclosed light-emitting element includes a plurality of layers between a pair of electrodes; and at least one layer among the plurality of layers contains one compound selected from the group consisting of oxide semiconductor and a metal oxide, and a compound having high hole transportation properties. Such the light-emitting element can suppress the crystallization of a layer containing one compound selected from the group consisting of oxide semiconductor and a metal oxide, and a compound having high hole transportation properties. As a result, a lifetime of the light-emitting element can be extended.

Abstract: It is an object of the present invention to provide a novel triazole derivative. Further, it is another object of the present invention to provide a light-emitting element having high luminous efficiency with the use of the novel triazole derivative. Moreover, it is still another object of the present invention to provide a light-emitting device and electronic devices which have low power consumption. A light-emitting element having high luminous efficiency can be manufactured with the use of a triazole derivative which is a 1,2,4-triazole derivative, in which an aryl group or a heteroaryl group is bonded to each of 3-position, 4-position, and 5-position, and in which any one of the aryl group or heteroaryl group has a 9H-carbazol-9-yl group.

Abstract: A semiconductor device with less power consumption and an electronic appliance using the same. The semiconductor device of the invention is supplied with a first potential from a high potential power source and a second potential from a low potential power source. Upon input of a first signal to an input node, an output node outputs a second signal. With the semiconductor device of the invention, a potential difference of the second signal can be controlled to be smaller than a potential difference between the first potential and the second potential, thereby power consumption required for charging/discharging wires can be reduced.

Abstract: An object is to provide an aromatic amine compound with excellent heat resistance. Another object is to provide a light emitting element, a light emitting device, and an electronic device with excellent heat resistance. An aromatic amine compound represented by General Formula (1) is provided. The aromatic amine compound represented by General Formula (1) has a high glass transition point and excellent heat resistance. By using the aromatic amine compound represented by General Formula (1) for a light emitting element, a light emitting device, and an electronic device, a light emitting element, a light emitting device, and an electronic device with excellent heat resistance can be obtained.

Abstract: To improve a deposition rate of a microcrystalline semiconductor layer by using a deposition method and to improve productivity of a display device including a TFT of a microcrystalline semiconductor, a reactive gas containing helium is supplied to a treatment chamber surrounded with a plurality of juxtaposed waveguides and a wall surface; a microwave is supplied to a space which is interposed between juxtaposed waveguides to generate plasma while the pressure of the treatment chamber is held at an atmospheric pressure or a sub-atmospheric pressure typically a pressure of 1×102 Pa or more and 1×105 Pa or less; and a microcrystalline semiconductor layer is deposited over a substrate placed in the treatment chamber. High density plasma is generated by providing slits on sides of the plurality of juxtaposed waveguides which face to another waveguide and supplying a microwave into the treatment chamber through the slit.

Abstract: A first base having a first antenna receiving electromagnetic waves and a second base having a sensor portion are separated. An antenna is provided over each of the first base and the second base such that the antennas are electromagnetically coupled. The first antenna constantly receives electromagnetic waves to generate electromotive force and charges a power storage portion. Since the electric power of the power storage portion is also used for driving of a sensor portion, the sensor portion operates even without communication with the external device. Provision of the first antenna receiving electromagnetic waves and the sensor portion on different bases permits miniaturization of a base having the sensor portion. Further, provision of the power storage portion storing electric power converted from electromagnetic waves received by the antenna enables operating the sensor actively.

Abstract: The present invention provides an antenna in that the adhesive intensity of a conductive body formed on a base film is increased, and a semiconductor device including the antenna. The invention further provides a semiconductor device with high reliability that is formed by attaching an element formation layer and an antenna, wherein the element formation layer is not damaged due to a structure of the antenna. The semiconductor device includes the element formation layer provided over a substrate and the antenna provided over the element formation layer. The element formation layer and the antenna are electrically connected. The antenna has a base film and a conductive body, wherein at least a part of the conductive body is embedded in the base film. As a method for embedding the conductive body in the base film, a depression is formed in the base film and the conductive body is formed therein.