Abstract: The present invention teaches a combination of parameters for the glow discharge decomposition of silane deposition of an amorphous silicon semiconductor having non-dispersive high mobility transport of majority carriers through the semiconductor material, useful in switching devices such as diodes, transistors and the like.

Abstract: A solar cell which includes a thin layer of active material bounded on the side toward the incident light with an antireflection coating and bounded on the other side by a two-dimensional hexagonal reflecting diffraction grating to internally reflect the incident light back into the active material.

Abstract: A reactively sputtered photoconductive amorphous silicon film having a controlled monohydride and polyhydride bond density is produced by applying a DC voltage bias to the film's substrate during deposition.

Abstract: A high efficiency amorphous silicon PIN semiconductor device having partially crystallized (microcrystalline) P and N layers is constructed by the sequential sputtering of N, I and P layers and at least one semi-transparent ohmic electrode. The method of construction produces a PIN device, exhibiting enhanced electrical and optical properties, improved physical integrity, and facilitates the preparation in a singular vacuum system and vacuum pump down procedure.

Abstract: An ultra-high efficiency inverted solar cell structure is disclosed. At the rear of the cell is a high performance heterocontact made of SIPOS (a mixture of micro-crystalline silicon and silicon dioxide). At the edge of the cell, the opposite contact is of conventional heavily doped silicon. The edge contact is kept in the dark at least one diffusion length or one-third mm laterally displaced away from both the active illuminated region and from the active heterocontact.

Abstract: A thin film semiconductor device with enhanced optical absorption properties and a method for producing it. The device comprises a substrate having at least one sandblasted surface and a thin film of semiconductor material deposited on the sandblasted surface.

Abstract: The present invention is an improved replication process which copies a master pattern onto an intermediate transfer mask which is then used to form a lithographic mask on the surface of a substrate. A pattern derived from the original master pattern is then produced in the substrate by an etching process.

Abstract: A silicon PIN microcrystalline/amorphous silicon semiconductor device is constructed by the sputtering of N, and P layers of silicon from silicon doped targets and the I layer from an undoped target, and at least one semi-transparent ohmic electrode.

Abstract: The present invention is an optically enhanced solar cell having a detached reflector. The optically enhanced solar cell includes a semiconductor material bounded on each side by transparent electrical contacts and an optional antireflection coating with the surface of at least one of these layers being textured. Light is reflected in the cell by a reflector which is detached (i.e., spaced) from the enhanced cell using a layer of dielectric material.

Abstract: A system and method for the loading of spherical nuclear fuel in vertical fuel rods. The system includes a fuel rod support, a glovebox, a weighing station system, a means for feeding spherical fuel to the fuel rod and transportation means for moving the fuel between parts of the system.

Abstract: A feeding apparatus for the loading of the spherical nuclear fuel into a fuel rod. The apparatus feeds fuel of three different diameters into a fuel rod so that the three different sized spheres are appropriately packed to achieve sufficient density of fuel to be used in a nuclear reactor.

Abstract: A solar cell which includes a thin layer of active material bounded on the side toward the incident light with an antireflection coating and bounded on the other side by a two-dimensional reflecting diffraction grating to internally reflect the incident light back into the active material.

Abstract: A system is disclosed for monitoring the concentration of gaseous ammonia in flue gases by simultaneously measuring the temperature and optical transmission of a flue gas-ammonia mixture.

Abstract: The present invention is a system and method for remotely measuring the temperature of hot gases in fired furnaces. This is achieved by adjusting the physical temperature of a black body until it equals the radiation temperature of the black body as determined by a pyrometer viewing the black body through the hot gases.

Abstract: An apparatus for continuously providing countercurrent liquid-solid contact. The preferred embodiment of the apparatus includes an Archimedes' screw in the form of a spiral and a distribution system which includes a central tube disposed along the axis of the spiral. The central tube includes a plurality of weirs and is in open communication with the spiral through a plurality of hollow spokes fixed at one end to the spiral and at the other end to the central tube.Dissolving solution is distributed by the distribution system to the spiral where it encounters nuclear material moving upward due to the pumping action of the spiral. The dissolved material moves counter current to the nuclear material and removed near the bottom of the apparatus.

Abstract: The present invention teaches a unique laser radiometer capable of accurately measuring the radiation temperature of a radiant surface and independently measuring the surface's emissivity. A narrow-band radiometer is combined with a laser reflectometer to measure concurrently radiance and emissivity of a remote, hot surface. Together, radiance and emissivity yield the true surface temperature of the remote target. A narrow receiver bandwidth is attained by one of two methods; (a) heterodyne detection or (b) optical filtering. A direct measurement of emissivity is used to adjust the value obtained for the thermal radiation signal to substantially enhance the accuracy of the temperature measurement for a given subject surface. The technique provides substantially high detection sensitivity over a very narrow spectral bandwidth.

Abstract: A high efficiency amorphous silicon PIN semi-conductor device is constructed by the sequential sputtering of N, I and P layers of amorphous silicon and at least one semi-transparent ohmic electrode. A method of construction produces a PIN device, exhibiting enhanced physical integrity and facilitates ease of construction in a singular vacuum system and vacuum pump down procedure.

Abstract: Large area random and mosaic arrays of identical submicron microcolumnar structures can be produced on surfaces by directionally ion etching a monolayer film of spherical colloidal particles.

Abstract: The invention is directed to a hydrogenated amorphous silicon PIN semiconductor device of hybrid glow discharge/reactive sputtering fabrication. The hybrid fabrication method is of advantage in providing an ability to control the optical band gap of the P and N layers, resulting in increased photogeneration of charge carriers and device output.

Abstract: A solar cell which includes a thin layer of active material bounded on the side toward the incident light with an antireflection coating and bounded on the other side by a reflecting diffraction grating to internally reflect the incident light back into the active material.