Abstract: A polishing pad and a CMP apparatus are provided. The polishing pad includes a plurality of patterns formed of trenches having a predetermined size and may include a groove for slurry flow. The plurality of patterns can include herringbone shaped trenches in concentric rows, where the rows of herringbone shaped trenches alternate in direction.

Abstract: Biomarkers that are diagnostic of type 1 diabetes, type 2 diabetes and/or diabetic disorder are identified. Detection of different biomarkers of the invention are also diagnostic of the degree of severity of type 1 diabetes, type 2 diabetes and/or diabetic disorder. An analysis includes the parameters of matching for BMI and Tanner stage. Receiver-operator characteristic (ROC) curves were established to assess association of the biomarkers with a disease.

Abstract: In a fabrication method of a semiconductor device a manufacturing method of a mask and an optimization method of a mask bias incorporating an optical proximity correction are provided. The manufacturing method of the mask incorporating an optical proximity correction can form a pattern in an excellent quality in a dense area where a micro design pattern in an irregular array state is formed. Also, a desired design pattern can be formed using a mask according to embodiments of the present invention regardless of an array state.

Abstract: Disclosed is a method for detecting properties of a Metal Oxide Silicon (MOS) varactor, which includes: establishing a MOS varactor model equation in conjunction with an area of a gate; calculating values of the coefficients of the MOS varactor model equation through measurements for test materials; and extracting the properties of a capacitor of the MOS varactor using the calculated values of the coefficients. According to the method, the MOS varactor model equation can be expressed by Cgate=[Cigate×Area+Cpgate×Perimeter]×N, wherein, Cgate denotes gate capacitance for voltage applied to the gate, Cigate denotes intrinsic gate capacitance, Cpgate denotes perimeter gate capacitance, and N denotes the number of gate fingers. The MOS varactor model equation can be applicable to various sized capacitors, so that it is possible to estimate a gate capacitance for voltage applied to a gate, considering the differences due to the surface shapes of a device.

Abstract: Disclosed is a semiconductor device. The semiconductor device includes a first gate formed in a trench of a semiconductor substrate, a first gate oxide layer on the semiconductor substrate including the first gate, a first epitaxial layer on the first gate oxide layer, first source and drain regions in the first epitaxial layer at sides of the first gate, an insulating layer on the first epitaxial layer, a second epitaxial layer on the insulating layer, a second gate oxide layer on the second epitaxial layer, a second gate on the second gate oxide layer, and second source and drain regions in the second epitaxial layer below sides of the second gate.

Abstract: An optical sheet includes a substrate onto which light is incident, and a convex part protruded from the substrate by a predetermined thickness. A thickness of the convex part increases from an edge to a center thereof.

Abstract: A method for forming an isolation layer for a semiconductor device is provided. The preferred method is capable of securing a gap fill margin during formation of an isolation layer. A device isolation layer formed according to a preferred method includes a trench formed in a device separation area of a semiconductor substrate; a thermal oxidation layer formed in a part of the trench; an oxidation silicon layer formed on the thermal oxidation layer; and an oxidation isolation layer formed on the oxidation silicon layer and filling the trench.

Abstract: A CMOS image sensor and a method of fabricating the same are provided. The CMOS image sensor includes: a semiconductor substrate of a first conductivity type having a photodiode region and a transistor region defined therein; a gate electrode formed above the transistor region of the semiconductor substrate with a gate insulating layer interposed therebetween; a first impurity region formed of the first conductivity type in the semiconductor substrate below the gate electrode and having a higher concentration of first conductivity type ions than the semiconductor substrate; and a second impurity region formed of a second conductivity type in the photodiode region of the semiconductor substrate.

Abstract: Novel, sensitive and specific markers for diagnostics and monitoring of liver injuries, including, but not limited to ischemic liver damage, are provided. This includes identification several enzymes of arginine/urea/nitric oxide cycle, sulfuration enzymes and spectrin breakdown related products, among others.

Abstract: Provided is a CMOS (complementary metal oxide semiconductor) image sensor and a manufacturing method thereof. In the method, a photodiode, an interlayer insulating layer, a color filter layer, and a planarizing layer are sequentially formed on a substrate. A photoresist is applied on the planarizing layer. The photoresist is selectively patterned to form a plurality of photoresist patterns. A surface of each photoresist is hardened. The hardened photoresist patterns are reflowed to form microlenses.

Abstract: A shadow aperture backscatter radiography (SABR) system includes at least one penetrating radiation source for providing a penetrating radiation field, and at least one partially transmissive radiation detector, wherein the partially transmissive radiation detector is interposed between an object region to be interrogated and the radiation source. The partially transmissive radiation detector transmits a portion of the illumination radiation field. A shadow aperture having a plurality of radiation attenuating regions having apertures therebetween is disposed between the radiation source and the detector. The apertures provide illumination regions for the illumination radiation field to reach the object region, wherein backscattered radiation from the object is detected and generates an image by the detector in regions of the detector that are shadowed by the radiation attenuation regions.

Abstract: A method for manufacturing an image sensor is provided. The method can include forming an oxide layer on a color filter layer, forming a first oxide layer microlens by etching the oxide layer, forming a second oxide layer microlens on the first oxide layer microlens, and forming a third oxide layer microlens on the second oxide layer microlens.

Abstract: The present invention relates to a method for providing molecules that are capable of inhibiting angiogenesis, comprising the steps of providing a range of molecules; testing whether these molecules can prevent interaction between JAM-B and JAM-C; testing the positive molecules for their ability to block angiogenesis in vivo; and selecting molecules that are positive in the angiogenesis test as angiogenesis inhibiting molecules. The method may further comprise the step of isolating or producing the angiogenesis inhibiting molecules. The invention further relates to the angiogenesis inhibiting molecules thus provided and produced, to their use in the treatment of cancer, to therapeutical compositions comprising them. In a particular embodiment the invention relates to monoclonal antibodies, in particular MAb H33, to soluble JAM-C and JAM-B and to small molecules.

Abstract: A metal line of semiconductor device and a method of forming the same are provided. An interlayer dielectric (ILD) layer is formed on a semiconductor substrate including a lower line. A via hole is formed in the ILD layer, and a diffusion barrier layer is formed on the ILD layer where the via hole is formed. A copper seed layer and a copper plating layer are repeatedly formed and etched until the hole is completely filled.

Abstract: Methods and devices for detecting photoresist coating failures are disclosed. A disclosed method to detect a photoresist coating failure on a semiconductor wafer comprises: loading a photoresist coated wafer on a notch position check block; rotating the coated wafer; detecting the position of a notch in the wafer; blowing air toward the surface of the wafer with at least one air nozzle located over the rotating wafer; detecting an amount of the air blown from the at least one air nozzle; and generating a coating failure signal if a variation in the amount of air blown from the at least one air nozzle is indicative of a photoresist coating failure.

Abstract: Disclosed is a method for manufacturing an image sensor. The method includes forming a polysilicon layer on a semiconductor substrate having an active region, forming a sacrificial layer on the polysilicon layer, forming a photoresist pattern on the sacrificial layer, implanting conductive impurities onto the polysilicon layer using the photoresist pattern as an ion implantation mask, removing the photoresist pattern, and removing the sacrificial layer from the polysilicon layer, thereby removing photoresist residues remaining on the sacrificial layer.

Abstract: The subject invention concerns N-thiolated ?-lactam compounds of formula A, wherein R1 is a hydrocarbon group having 1-8 carbon atoms; R3 is an organothio group; and R4 is alkyl, alkenyl, alkynyl, aryl, heteroaryl, cycloalkyl, heterocycloalkyl, cycloalkenyl, or heterocycloalkenyl, and analogs and pharmaceutically acceptable salts, esters and amides thereof. The subject invention also concerns methods for inducing tumor cell death or inhibiting tumor cell proliferation, and methods for inducing DNA damage, inhibiting DNA replication, activating p38 MAP kinase, or activating caspase cascade activation, or releasing cytochrome C from mitochondria into the cytoplasm in a tumor cell. Methods for treating cancer using N-thiolated ?-lactam compounds, as well as pharmaceutical compositions comprising the same are further disclosed.

Abstract: An image sensor and fabricating method thereof are provided. A multi-layered interlayer insulating layer is formed on a substrate including a photodiode, and a metal line is formed in the interlayer insulating layer, such that the metal line passes through the interlayer insulating layer. A conductive barrier layer is formed on the metal line, a color filter array is formed on the interlayer insulating layer and the metal line, and microlenses are formed on the color filter array.