Abstract: A spindle motor is disclosed. The spindle motor includes a base including a PCB, a bearing housing installed on the base and having a bearing therein, a rotating shaft rotatably supported by the bearing, a stator including a core arranged around the bearing housing and a coil wound around the core, a rotor including a rotor yoke supported by the rotating shaft and a magnet coupled to the rotor yoke, and a stopper supported by the base at an outer side of the rotor yoke, and partially located above a portion of the rotor yoke to inhibit the rotor yoke from moving upward.

Abstract: A UV sterilizer with a double-chamber structure comprises an inner tube and an outer tube with different size, the inner tube being partly surrounded by the outer tube thereby forming an inner chamber and an outer chamber, the inner chamber is the space encircled by the inner tube and the outer chamber is the annular space encircled by the overlapped portions of the inner tube and the outer tube; a first end portion of the inner tube is located outside the outer chamber and provided with a first water port, a second end portion of the inner tube is located inside the outer chamber and provided with a second water port communicating with the outer chamber; a first end portion of the outer tube is sealingly connected with the outer wall of the inner tube, while a second end portion of the outer tube is sealed; sleeved UV lamps are arranged in the outer chamber or in both the inner chamber and the outer chamber.

Abstract: The present invention relates to a new class of compounds having ?? T cells activating properties referred to herein as angelyl or tiglyl phosphoesters, compositions comprising any of these compounds and methods for regulating an immune response in a subject comprising the step of administering these compounds.

Abstract: A complementary metal oxide semiconductor (CMOS) image sensor is provided. The CMOS image sensor can include a photodiode, a transfer transistor (Tx), a reset transistor (Rx), a drive transistor (Dx), and a select transistor (Sx). The CMOS image sensor includes a floating diffusion region between the transfer transistor (Tx) and the reset transistor (Rx). The gate of the drive transistor (Dx) is formed of polysilicon and extends to and is formed on the floating diffusion region.

Abstract: Provided are a semiconductor device and a method for fabricating the same. The semiconductor device can include a transistor structure, including a gate dielectric on a substrate, a gate electrode on the gate dielectric, a spacer at sidewalls of the gate electrode, and source/drain regions in the substrate; and an interlayer dielectric on the transistor structure where an air gap is provided in a region between the spacer, the interlayer dielectric, and the source/drain region of the substrate.

Abstract: Provided is a semiconductor device. The semiconductor device includes a semiconductor substrate, a plurality of contact metals, and a gate electrode. The semiconductor substrate has an active region and a dummy active region, and a plurality of contact metals are formed in the active region. A gate electrode is located between the contact metals in the active region. A first distance between the active region and the dummy active region, and a second distance between an edge of the contact metal and an edge of the active region are set such that a channel characteristic of the active region is improved.

Abstract: A semiconductor device and a fabricating method thereof are provided. A PMD layer and at least one IMD layer are formed on a semiconductor substrate. A through-electrode penetrates through the PMD layer and the IMD layer, and a connecting electrode connects to the through-electrode.

Abstract: An image sensor and a fabricating method thereof are provided. A pixel area and a peripheral circuit area can have a step difference on a semiconductor substrate. A Complimentary Metal Oxide Semiconductor (CMOS) circuit can be provided on the pixel area, and an interlayer dielectric layer can be provided on the pixel area and the peripheral circuit area. A photodiode can be provided on the interlayer dielectric layer of the pixel area such that the top of the photodiode, or an intrinsic layer of the photodiode, is about even with the top of the interlayer dielectric layer of the peripheral circuit area.

Abstract: The present invention relates generally to a device and method for providing a lateralization effect such as in a medical procedure. The lateralization device can have a supporting member, which can be adapted to be supported in a fixed position. A lateralization member can be provided to at least partially wrap around the supporting member and be mounted thereto to provide a lateralization effect. The lateralization member can be formed and/or adjusted to provide a variable lateralization. For example, the lateralization member can comprise a cylindrical member with an eccentric cut-out portion adapted to fit over the supporting member. The inter wall of the cut-out portion and the outer wall of the supporting member can be formed with interference fittings so that the lateralization member can rotate in relation to the supporting member to provide a variable lateralization.

Abstract: A CMOS image sensor and a method for manufacturing the same are provided. The method includes: preparing a semiconductor substrate in which a device isolation region and an active region are defined; forming a gate pattern including a gate oxide layer and a gate electrode on the semiconductor substrate; implanting n-type impurity ions in a predetermined part of the active region of the semiconductor substrate to form a photodiode region; forming a spacer at a sidewall of the gate pattern; forming a p-type impurity region at a surface of the photodiode region; forming an epitaxial layer on the semiconductor substrate and the gate pattern except for on the device isolation region and the spacers by performing a selective epitaxial growth; and implanting n+ type ions in a transistor region of the semiconductor substrate below the epitaxial layer to form a source/drain region.

Abstract: Disclosed is a vibration motor. The vibration motor includes a bracket including a support tube protruding from the bracket, a case coupled with the bracket, a support shaft supported by the bracket and the case, a bearing rotatably fitted around the support shaft, a rotor fixed to the bearing to rotate together with the bearing, thereby generating vibration, a stator mounted on the bracket to rotate the rotor through interaction with the rotor, a support member installed around the support tube, and a first washer interposed between the support tube and the bearing and supported by the support member.

Abstract: Provided is a CMOS image sensor and method of manufacturing same. The CMOS image sensor includes a photodiode, a transfer transistor, a reset transistor, a drive transistor, and a select transistor. A device isolation layer is formed on a first conductive type substrate. Gate electrodes of the transfer transistor, the reset transistor, the drive transistor, and the select transistor are formed on an active region of the substrate with gate insulating layers interposed therebetween. A first diffusion region is formed of a second conductive type in a first region of the active region, where the first region does not include a floating diffusion region between the transfer transistor and the reset transistor and the photodiode region. A second diffusion region is formed of the second conductive type in the floating diffusion region at a concentration lower than that of the second conductive type first diffusion region.

Abstract: Provided is an image sensor. The image sensor can include a first substrate comprising a pixel portion in which a readout circuitry is provided and a peripheral portion in which a peripheral circuitry is provided. An interlayer dielectric including lines can be formed on the first substrate to connect with the readout circuitry and the peripheral circuitry. A crystalline semiconductor layer can be provided on a portion of the interlayer dielectric corresponding to the pixel portion through a bonding process. The crystalline semiconductor layer can include a first photodiode and second photodiode. The first and second photodiodes can be defined by device isolation trenches in the crystalline semiconductor layer. A device isolation layer can be formed on the crystalline semiconductor layer comprising the device isolation trenches. An upper electrode layer passes through the device isolation layer to connect with a portion of the first photodiode.

Abstract: The invention relates to the use of an agent having, stimulating or maintaining tumor necrosis factor (TNF) activity, together with an interferon (IFN) for treating and/or preventing demyelinating diseases, in particular multiple sclerosis (MS). The use of a combination of a TNF or a tumor necrosis factor binding protein in combination with an interferon for treating and/or preventing demyelinating diseases is preferred.

Abstract: Provided is a bent monopole antenna. The bent monopole antenna includes a printed circuit board, an RF module, a feed line, and a main radiation pattern part and a sub-radiation pattern part. The RF module is installed the printed circuit board to generate an electrical signal. The feed line is connected to the RF module to deliver the electrical signal. The main radiation pattern part and the sub-radiation pattern part serve as a radiation pattern part connected to the feed line to generate an electromagnetic field (electromagnetic waves) using electrical signals applied thereto. The main radiation pattern part has a spiral (helical) pattern passing through the printed circuit board through a via.

Abstract: There is provided cladding apparatus comprising a body portion (108) having an inner surface (110) and an outer surface (112) extending longitudinally between a leading edge (114) and a trailing edge (116) and transversely between opposed side edges (118). The leading edge (114) is provided with a formation (124) which inter-engages with complementary formation (126) provided on an adjacent body portion thereby permitting the body portions to inter-engage when laid in a longitudinal sequence. The body portion (108) is provided with a pair of longitudinally extending elongate mounting portions (128) on the inner surface (110) thereof. A longitudinal mounting batten (144) is attached to the fascia panel (106) adjacent to the exposed edge of the tiles (104), and into which the elongate mounting portions (128) may slide.

Abstract: The present invention relates to the field of obesity research. Obesity is a public health problem that is serious and widespread. The application is related to OBG3 polypepide fragments and compositions comprising these fragments. It also discloses methods of reducing free fatty acid levels with the polypeptide fragments of the invention.

Abstract: A novel CXC-chemokine binding protein is cloned from the salivary glands of Rhipicephalus sanguineus. Compounds prepared in accordance with the present invention can be used as anti-inflammatory and immuno-modulatory compounds and in the treatment or prevention of CXC-chemokine-related diseases.

Abstract: The invention relates to new polypeptides in isolated form belonging to a subfamily of the human immunoglobulin superfamily, which polypeptide shows at least 70% sequence homology with the amino acid sequence of the murine Confluency Regulated Adhesion Molecules 1 or 2 (CRAM-1 or CRAM-2) as depicted in FIG. 3, upper and second row, respectively, and antibodies thereto as well as their use in treatment of inflammation and tumors.

Abstract: Disclosed is a voltage switch circuit of a semiconductor device. The subject voltage switch circuit can be used to apply voltage to a semiconductor memory device control circuit. The voltage switch circuit according to an embodiment includes five transistors and a capacitor. An output terminal of the subject circuit outputs VSS when VDD is applied to an input terminal, and outputs a boosted operating voltage when VSS is applied to the input terminal.