Abstract: A crosslinkable thermal interface material is produced by combining at least one rubber compound, at least one amine resin and at least one thermally conductive filler. This interface material takes on the form of a liquid or “soft gel”. The gel state is brought about through a crosslinking reaction between the at least one rubber compound composition and the at least one amine resin composition. Once the foundation composition that comprises at least one rubber compound, at least one amine resin, and at least one thermally conductive filler has been prepared, the composition must be compared to the needs of the electronic component, vendor, or electronic product to determine if a phase change material and/or at least one solvent is needed to change some of the physical properties of the composition.

Abstract: The adhesion of low k poly(arylene ether) dielectric coating compositions is effectively enhanced by a polycarbosilane promoter additive or primer. A coating composition is prepared by (a) providing a poly(arylene ether) composition; and (b) adding to said composition a small effective adhesion promoting amount of certain polycarbosilanes. The adhesion enhanced coating compositions are cured by heat treatment at temperatures in excess of 50° C. to form a polycarbosilane-modified poly(arylene ether) polymer composition having a low k dielectric constant for use in semiconductor devices.

Abstract: We have developed a process and product which provide thermoplastic articles featuring a permanent outer surface which has selectively varied chemical functionality while maintaining the inherent mechanical properties of the base fiber.

Abstract: The adhesion of low k poly(arylene ether) dielectric coating compositions is effectively enhanced by a polycarbosilane promoter additive or primer. A coating composition is prepared by (a) providing a poly(arylene ether) composition; and (b) adding to said composition a small effective adhesion promoting amount of certain polycarbosilanes. The adhesion enhanced coating compositions are cured by heat treatment at temperatures in excess of 50° C. to form a polycarbosilane-modified poly(arylene ether) polymer composition having a low k dielectric constant for use in semiconductor devices.

Abstract: Novel processes for preparing hydridosiloxane and organohydridosiloxane resins are disclosed. The processes of the invention broadly provide for the steps of contacting a silane monomer with a phase transfer catalyst in the presence of a reaction mixture that includes a nonpolar, e.g., hydrocarbon, solvent, and a polar solvent, e.g., alcohol and water. The process is conducted under conditions effective to catalytically convert said silane monomer into hydridosiloxane and organohydridosiloxane resins. Recovery of the products is advantageously aided by the ease of separating the phase transfer catalyst from the dual phase reaction mixture by separating the immiscible polar solvent carrying the catalyst from the nonpolar solvent, that carries the product. Hydridosiloxane and organohydridosiloxane resins produced by the processes of the invention are also provided.

Abstract: The present invention provides a composition comprising (a) thermosetting component comprising: (1) optionally monomer of Formula I as set forth below and (2) at least one oligomer or polymer of Formula II as set forth below where E, Q, G, h, l, j, and w are as set forth below and (b) porogen that bonds to thermosetting component (a). Preferably, the porogen is selected from the group consisting of unsubstituted polynorbornene, substituted polynorbornene, polycaprolactone, unsubstituted polystyrene, substituted polystyrene, polyacenaphthylene homopolymer, and polyacenaphthylene copolymer. Preferably, the present compositions may be used as dielectric substrate in microchips, multichip modules, laminated circuit boards, or printed wiring boards.

Abstract: The present invention relates to apparatus, procedures and compositions for avoiding and reducing damage to low dielectric constant materials and other soft materials, such as Cu and Al, used in fabricating semiconductor devices. Damage reduction can be achieved by decreasing the role of mechanical abrasion in the CMP of these materials and increasing the role of chemical polishing, which can also improve material removal rates. Increasing the role of chemical polishing can be accomplished by creating a polishing slurry, which contains components that interact chemically with the surface to be polished. This slurry may or may not also contain soft abrasive particles, which replace the hard abrasive particles of conventional slurries. Use of soft abrasive particles can reduce the role of mechanical abrasion in the CMP process. Use of this slurry in CMP can reduce surface scratches and device damage.

Abstract: A process for forming a planarization film on a substrate that does not smoke or fume on heating includes applying a polymeric solution including a novolac resin having a weight average molecular weight between about 1000 and 3000 amu, which has been fractionated to remove molecules with molecular weight below about 350 amu, a surfactant selected from a group consisting of a non-fluorinated hydrocarbon, a fluorinated hydrocarbon and combinations thereof, and an optional organic solvent to a substrate, followed by heating the substrate.

Abstract: An aqueous metal oxide sol slurry has been developed for removal of low dielectric constant materials. The slurry is formed directly in solution utilizing non-dehydrated chemically active metal oxide sols which are formed in a colloidal suspension or dispersion. The oxide sols have not undergone any subsequent drying and the particles are believed to be substantially spherical in structure, dimensionally stable and do not change shape over time. The sol particles are mechanically soft and heavily hydrated which reduces surface damage even in the case where soft polymer or porous dielectric films are polished. The sol particles are formed of a chemically active metal oxide material, or combinations thereof, or can be coated on chemically inactive oxide material such as silicon dioxide or can be coformed therewith. The oxide sols can include a bi-modal particle distribution. The slurry can be utilized in CMP processes, with or without conditioning.

Abstract: A low dielectric constant material has a polymeric network that is fabricated from a first and a second component. The first component comprises a polymeric strand, and the second component comprises a molecule having a central portion with at least three arms extending from the central portion, wherein each of the arms includes a backbone with a reactive group. The first component and the second component form the polymeric network in a reaction that involves at least one of the reactive groups when the first and second components are thermally activated. Contemplated low dielectric constant materials are advantageously employed in the fabrication of electronic devices, and particularly contemplated devices include integrated circuits.

Abstract: An interface material comprising a resin mixture and at least one solder material is herein described. The resin material may comprise any suitable resin material, but it is preferred that the resin material be silicone-based comprising one or more compounds such as vinyl silicone, vinyl Q resin, hydride functional siloxane and platinum-vinylsiloxane. The solder material may comprise any suitable solder material, such as indium, silver, copper, aluminum and alloys thereof, silver coated copper, and silver coated aluminum, but it is preferred that the solder material comprise indium or indium-based compounds and/or alloys. The interface material, or polymer solder, has the capability of enhancing heat dissipation in high power semiconductor devices and maintains stable thermal performance. The interface material may be formulated by mixing the components together to produce a paste which may be applied by dispensing methods to any particular surface and cured at room temperature or elevated temperature.

Abstract: Disclosed is a metal-clad laminate product having a carrier film, a aqueous soluble release or parting layer deposited onto the carrier film and which can be mechanically separated from the carrier film, and an ultra thin metal layer deposited onto the parting layer. Also disclosed is a method for making the metal-clad laminate product.

Abstract: The present invention relates to the planarization of surfaces as typically encountered in the fabrication of integrated circuits, particularly copper conductors and Ta/TaN barrier layers encountered in damascene and dual damascene interconnects. The present invention describes planarization methods for Cu/Ta/TaN interconnects, typically making use of a viscous overlayer tending to dwell in regions of lower surface topography, protecting said lower regions from etching by a combination of chemical and mechanical effects. In some embodiments, the viscous overlayer contains species that hinder removal of copper from regions of the surface in contact with the viscous layer. Such species may be a substantially saturated solution of copper ions among other additives, thereby hindering the dissolution of interconnect copper into the protective overlayer.

Abstract: Proper registration between layers of a laminated multi-layer interconnect can be achieved by precisely dimensioning the alignment plate, selecting the materials of which the alignment plate is composed to have the same thermal coefficient of expansion as the layers being laminated, and/or providing the alignment plate with pins sized to be equal to or larger the alignment/registration holes of the layers.

Abstract: A crosslinkable thermal interface material is produced by combining at least one rubber compound, at least one amine resin and at least one thermally conductive filler. This interface material takes on the form of a liquid or “soft gel”. The gel state is brought about through a crosslinking reaction between the at least one rubber compound composition and the at least one amine resin composition. Once the foundation composition that comprises at least one rubber compound, at least one amine resin, and at least one thermally conductive filler has been prepared, the composition must be compared to the needs of the electronic component, vendor, or electronic product to determine if a phase change material is needed to change some of the physical properties of the composition.

Abstract: This invention concerns lasable bond-ply materials comprising a nonwoven reinforcing material and at least one resin material. The present invention also includes methods for using the bond-ply of this invention to manufacture high density multilayer printed wiring boards.

Abstract: Apparatus and method are described for measuring and controlling the crimp characteristics of a moving crimped tow. A light source illuminates a section of the moving crimped tow and at least one progressive scanning camera acquires a non-interlaced video image of the tow. The acquired image is digitized and a processor analyzes the non-interlaced image. Crimp characteristics are derived based on this analysis.

Abstract: A damascene structure includes a hard mask layer that is applied in a liquid phase to a line dielectric layer. Contemplated hard mask layers comprise a Si—N bond and are densified such that the etch resistivity of the hard mask layer is greater than the etch resistivity of the line dielectric layer and the via dielectric layer in the damascene structure. Particularly preferred hard mask layers include polyperhydrosilazane.

Abstract: A method of rinsing an electronic substrate recognizes that adding a buffer to a rinsing fluid eliminates fluctuations in the amount of residues on an electronic substrate, and a buffered rinsing fluid is prepared by (a) providing water from a water source; (b) deionizing the water to produce deionized water; (c) adding a buffer to the deionized water at a concentration effective to eliminate fluctuations in the amount of residues on the electronic substrate. The electronic substrate is rinsed with the buffered rinsing fluid.

Abstract: A colloidal suspension of nanoparticles composed of a dense material dispersed in a solvent is used in forming a gap-filling dielectric material with low thermal shrinkage. The dielectric material is particularly useful for pre-metal dielectric and shallow trench isolation applications. According to the methods of forming a dielectric material, the colloidal suspension is deposited on a substrate and dried to form a porous intermediate layer. The intermediate layer is modified by infiltration with a liquid phase matrix material, such as a spin-on polymer, followed by curing, by infiltration with a gas phase matrix material, followed by curing, or by curing alone, to provide a gap-filling, thermally stable, etch resistant dielectric material.