Abstract: This invention pertains to a siloxane resin composition comprising R1SiO3/2 siloxane units, R2SiO3/2 siloxane units and (R3O)bSiO(4-b)/2 siloxane units wherein R1 is an alkyl group having 1 to 5 carbons, hydrogen, or mixtures thereof; R2 is a monovalent organic group having 6 to 30 carbons; R3 is a branched alkyl group having 3 to 30 carbons, b is from 1 to 3; and the siloxane resin contains from 2.5 to 85 mole percent R1SiO3/2 units, 2.5 to 50 mole percent R2SiO3/2 units and 5 to 95 mole percent (R3O)bSiO(4-b)/2 units. The siloxane resin is useful to make insoluble porous resin and insoluble porous coatings. Heating a substrate coated with the siloxane resin at a sufficient temperature effects removal of the R2 and R3O groups to form an insoluble insoluble porous coating having a porosity of 1 to 60 volume percent and a dielectric constant in the range of 1.5 to 3.0.

Abstract: A vibration damping silicone composition with excellent long term storage stability and vibration damping ability contains as components (A) a silicone oil, (B) hollow particles of an organic resin having an inorganic material powder supported on its surfaces, and (C) a solid inorganic material powder.

Abstract: This invention is directed to an elastomer composition produced by crosslinking a high molecular weight ≡Si—H containing polysiloxane and a diene, diyne or ene-yne compound in the presence of a diluent. The elastomer composition is suitable for use in forming personal care compositions.

Abstract: A method for forming an electrically insulating thin film coating the surface of an electronic device with an electrically insulating thin-film-forming resin composition and crosslinking the composition by a method selected from the group consisting of heating and irradiation with high-energy rays.

Abstract: This invention pertains to a method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant and a light transmittance of 95% or more for light with a wavelength in the range of 400 nm to 800 nm. The method comprises reacting a methyl-containing silane in a controlled oxygen environment using plasma enhanced or ozone assisted chemical vapor deposition to produce the films. Because of the transmittance the resulting films are useful in the formation of display devices.

Abstract: This invention related to silicone elastomer compositions in the form of gels and/or organized structures. The silicone elastomer compositions are produced by reacting a siloxane having a first reactive group with a crosslinker having a second reactive group in a diluent. One reactive group is selected from epoxy-functional groups or chlorohydrin functional groups while the other reactive group is a functional group that reacts with epoxy-functional groups or chlorohydrin functional groups (i.e. amine, hydroxyl). The silicone elastomer compositions of the instant invention are particularly useful in personal care products, textiles, auto care products, and laundry products and for the delivery of active ingredients.

Abstract: Silicone resins having the general formula (R1SiO3/2)x(HSiO3/2)y where R1 is an alkyl group having 8 to 24 carbon atoms; x has a value of 0.05 to 0.7; y has a value of 0.3 to 0.95 and x+y =1. The resins are used to form porous ceramic materials and porous thin films on semiconductor devices.

Abstract: This invention pertains to a siloxane resin composition comprising R1SiO3/2 siloxane units, R2SiO3/2 siloxane units and (R3O)bSiO(4-b)/2 siloxane units wherein R1 is an alkyl group having 1 to 5 carbons, hydrogen, or mixtures thereof; R2 is a monovalent organic group having 6 to 30 carbons; R3 is a branched alkyl group having 3 to 30 carbons, b is from 1 to 3; and the siloxane resin contains from 2.5 to 85 mole percent R1SiO3/2 units, 2.5 to 50 mole percent R2SiO3/2 units and 5 to 95 mole percent (R3O)bSiO(4-b)/2 units. The siloxane resin is useful to make insoluble porous resin and insoluble porous coatings. Heating a substrate coated with the siloxane resin at a sufficient temperature effects removal of the R2 and R3O groups to form an insoluble insoluble porous coating having a porosity of 1 to 60 volume percent and a dielectric constant in the range of 1.5 to 3.0.

Abstract: A method for producing fluorinated hydrogenated silicon oxycarbide (H:F:SiOC) and amorphous fluorinated hydrogenated silicon carbide (H:F:SiC) films having low dielectric permittivity. The method comprises reacting a silicon containing compound with a fluorocarbon or fluorohydrocarbon compound having an unsaturated carbon bonded to F or H. The resulting films are useful in the formation of semiconductor devices.

Abstract: This invention pertains to a method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant. The method comprises reacting an methyl-containing silane in a controlled oxygen environment using plasma enhanced or ozone assisted chemical vapor deposition to produce the films. The resulting films are useful in the formation of semiconductor devices and have a dielectric constant of 3.6 or less.

Abstract: A nonsagging and extrudable room temperature curable silicone rubber composition with excellent adherence to a variety of substrates comprising (A) diorganopolysiloxane having silicon-bonded alkoxy in molecular chain terminal position, (B) surface-hydrophobicized dry method silica, (C) non-surface-hydrophobicized dry method silica, (D) alkoxysilane, (E) an organotitanium compound, and (F) light stabilizer and/or UV absorber.

Abstract: A sealing dielectric layer is applied between a porous dielectric layer and a metal diffusion barrier layer. The sealing dielectric layer closes the pores on the surface and sidewalls of the porous dielectric layer. This invention allows the use of a thin metal diffusion barrier layer without creating pinholes in the metal diffusion barrier layer. The sealing dielectric layer is a CVD deposited film having the composition SixCy:Hz.

Abstract: Nanoporous silicone resins and silicone resin films having low dielectric constants and a method for preparing such nanoporous silicone resins. The silicone resin comprises the reaction product of a mixture comprising (A) 15-70 mol % of a tetraalkoxysilane described by formula Si(OR1)4,  where each R1 is an independently selected alkyl group comprising 1 to about 6 carbon atoms, (B) 12 to 60 mol % of a hydrosilane described by formula HSiX3,  where each X is an independently selected hydrolyzable substituent, (C) 15 to 70 mole percent of an organotrialkoxysilane described by formula R2Si(OR3)3,  where R2 is a hydrocarbon group comprising about 8 to 24 carbon atoms or a substituted hydrocarbon group comprising a hydrocarbon chain having about 8 to 24 carbon atoms and each R3 is an independently selected alkyl group comprising 1 to about 6 carbon atoms; in the presence of (D) water, (E) hydrolysis catalyst, and (F) organic solvent for the reaction product.

Abstract: To provide a method for forming insulating thin films that can induce condensation of silanol and dehydration to a high degree at or near ambient pressure. An interlevel dielectric layer is formed on a semiconductor substrate by coating hydrogen silsesquioxane resin onto the substrate and curing the hydrogen silsesquioxane resin to produce an interlevel dielectric layer. This interlevel dielectric layer is then heated at a pressure from 1 to 1,000 torr at a temperature from 150 to 550° C.

Abstract: An electrically insulating thin-film-forming resin composition comprising (A) a hydrogen silsesquioxane resin, (B) a solvent-soluble polymer, and (C) a solvent; and a method for forming an electrically insulating thin film therefrom.

Abstract: An alkoxyhydridosiloxane resin composition comprising ROSiO3/2 siloxane units and HSiO3/2 siloxane units wherein R is an alkyl group having 10 to 28 carbon atoms, wherein the alkoxyhydridosiloxane resin contains an average from 5 to 40 mole percent silicon bonded alkoxy groups, and wherein the alkoxyhydridosiloxane resin contains an average of at least 45 mole percent silicon bonded hydrogen atoms. While not represented by the structure, the resins may also contain a small number of atoms which have either 0 or 2 hydrogen atoms attached thereto and/or a small number of SiC groups such as CH3SiO3/2 or HCH3SiO2/2 groups. These resins are useful for forming nanoporous silicone resin coatings having low dielectric constant coatings useful for electrical insulating coatings on electronic devices.

Abstract: A method for hydrolyzing chlorosilanes having at least three chlorine atoms bonded to each silicon atom to form silicone resins. The method comprises adding at least one of hydridotrichlorosilane, tetrachlorosilane, or organotrichlorosilane to a two-phase mixture comprising a non-polar organic solvent, an aqueous phase comprising 0 to about 43 weight percent hydrochloric acid, and a surface active compound selected from the group consisting of organosulfates described by formula R2SO4H and alkali metal salts thereof, where R2 is selected from the group consisting of alkyl groups comprising about 4 to 16 carbon atoms and alkylphenyl groups comprising 7 to about 22 carbon atoms.

Abstract: Soluble silicone resin compositions having good solution stability and a method for their preparation. The silicone resin comprises the reaction product of a mixture comprising (A) 15-70 mol % of a tetraalkoxysilane described by formula Si(OR1)4, where each R1 is an independently selected alkyl group comprising 1 to about 6 carbon atoms, (B) 12 to 60 mol % of a hydrosilane described by formula HSiX3, where each X is an independently selected hydrolyzable substituent, (C) 15 to 70 mole percent of an organotrialkoxysilane described by formula R2Si(OR3)3, where R2 is a hydrocarbon group comprising about 8 to 24 carbon atoms or a substituted hydrocarbon group comprising a hydrocarbon chain having about 8 to 24 carbon atoms and each R3 is an independently selected alkyl group comprising 1 to about 6 carbon atoms; in the presence of (D) water, (E) hydrolysis catalyst, and (F) organic solvent for the reaction product.

Abstract: A method for forming thin films on substrates wherein the films are produced by applying a solution of an electrically insulating, heat-curing resin onto the substrate, evaporating the solvent and exposing the resin to high energy radiation to cure the resin. The resin solution contains a substance selected from solvents and gas generating additives that causes the dedensification of the film during the cure of the resin. This results in a film having a dielectric constant of below 2.7. A semiconductor device is also disclosed as having an interconnect structure including at least one electrically conductive layer with an interposed insulating layer having a dielectric constant of less than 2.7 wherein the insulating layer is produced by the method described above.

Abstract: The present invention pertains to a method for manufacturing a hydrogen-silsesquioxane resin in which a solution of HSiCl3 in a halogenated hydrocarbon solvent which can dissolve the organic sulfonic acid described below and which does not react with sulfuric acid is added to a two-phase system comprising [a] an aqueous phase which contains sulfuric acid and an organic sulfonic acid which is not sulfonated by sulfuric acid and which is soluble in both water and the organic phase described below, and [b] an organic phase which contains the halogenated hydrocarbon solvent, and the resulting mixture is agitated. In this method, the ratio of the sulfuric acid relative to the combined weight of the water (including water of hydration in cases where the above sulfonic acid contains such water of hydration) and sulfuric acid is 80 to 96 wt %, and is present in the organic phase at the rate of 0.008 moles/L or greater.