Abstract: A method and apparatus for control of precursor and purge additive materials in a deposition system comprising a precursor material delivery system and a plurality of purge additive transfer lines connected between or at components in the precursor material delivery system. One of the plurality of purge additive transfer lines is connected between an ampoule and a liquid mass flow controller, another is connected between the liquid mass flow controller and a vaporizer and a third is connected to the vaporizer. The apparatus further comprises a process chamber connected to the precursor material delivery system and having a susceptor wherein one of the plurality of purge additive transfer lines is connected to the susceptor. With the apparatus and accompanying method, formation of particulate contaminants is greatly reduced.

Abstract: A plasma enhance chemical processing reactor and method. The reactor includes a plasma chamber and a source of electromagnetic energy. The plasma chamber is in communication with a process chamber which includes a wager support and a gas manifold. The plasma generated in the plasma chamber extends into the process chamber and interacts with the reactive gases to deposit a layer of material on the wafer. The reactor also includes a vacuum system for exhausting the reactor. The method includes the steps of generating a plasma within the plasma chamber, introducing at least one gaseous chemical into the process chamber proximate to the wafer support and applying r.f. gradient to induce diffusion of the plasma to the area proximate the wafer support.

Abstract: An apparatus for a wafer processing system comprising a wafer support chuck attached to a gas delivery system for delivery of a gas to the backside of a wafer supported by the chuck. The gas delivery system has a gas shutoff valve directly connected to the wafer chuck. The shutoff valve provides a positive shutoff with negligible leak rate. By placing the valve in close proximity to the wafer chuck, the volume of the backside gas trapped between the valve and the wafer is minimized. Release of this trapped gas into the process chamber during wafer transfer has no adverse impact on the performance of the processing system.

Abstract: A heat exchanger apparatus including a heat exchange element and a substrate support. A clamp member is coupled to the heat exchange element and the substrate support by expanding the clamp member to an expanded state sufficient to surround a portion of the substrate support and the heat exchange element, and contracting the clamp member to couple the clamp member to the substrate support.

Abstract: An apparatus and method for controlling a flow of process material to a deposition chamber. The apparatus comprises an injector valve, disposed between the process material source and the deposition chamber. The injector valve controls the flow of precursor material by repeatedly opening and closing the injector valve with a predetermined duty cycle. The apparatus further comprises an evaporator coupled to the injector valve for evaporating the precursor.

Abstract: The invention provides a deposition system and methods of depositing materials onto substrates. In one aspect, a modular processing chamber is provided which includes a chamber body defining a processing region. The chamber body includes a removable gas feedthrough, an electrical feedthrough, a gas distribution assembly mounted on a chamber lid and a microwave applicator for generating reactive gases remote from the processing region.

Abstract: The present invention provides an apparatus and method for sequential deposition of regular series of layers on consecutive substrates in a modular assembly-line like system. The apparatus and method are especially used processing large glass or metal substrates such as are employed in solar panels. The apparatus includes a load lock chamber and a processing chamber coupled to the load lock chamber. Both the load lock chamber and the processing chamber include a platen to support the substrate. Each platen includes slots therein. A substrate transfer shuttle is provided which is moveable along a shuttle path between one position in the load lock chamber and another position in the processing chamber for transferring the substrate between the load lock chamber and the processing chamber. The shuttle may be moved below the level of the platen and may be maintained in the processing chamber during processing.

Abstract: A multi-speed slit valve apparatus and method of actuating a slit valve apparatus at least at two distinct speeds is provided. The slit valve apparatus includes a pneumatic cylinder 210 having a primary channel 254, 266 and auxiliary channel 258, 270 at each end, wherein the auxiliary channels 258, 270 have a cross sectional area smaller than that of the primary channels 254, 266. A piston 226 defining a front volume 240 and a back volume 242 is disposed in the cylinder 210 and is reciprocally actuated by a compressed fluid such as air. At a predetermined stage during the cylinder's out-stroke and in-stroke the primary channels 254, 266 become sealed from the front and back volumes 240, 242, respectively, such that during the remainder of the stroke the fluid is biased to exhaust through the auxiliary channels 258, 270.

Abstract: Metallization process sequences are provided for forming reliable interconnects including lines, vias and contacts. An initial barrier layer, such as Ta or TaN, is first formed on a patterned substrate followed by seed layer formed using high density plasma PVD techniques. The structure is then filled using either 1) electroplating, 2) PVD reflow, 3) CVD followed by PVD reflow, or 4) CVD.

Abstract: The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers having sub 0.5 micron feature sizes having aspect ratios higher than 1.2:1.

Abstract: The present invention provides a method and apparatus for detecting the end point of a process by monitoring the position of a valve during the process. In one aspect, a cleaning process is performed in the chamber, and a controller monitors the valve position to determine the end point of the process which corresponds to a decrease in the number of steps in the valve position required to achieve a stable throttle valve position after the cleaning process is complete.

Abstract: A method and apparatus for improving the adhesion of a copper layer to an underlying layer on a wafer. The layer of copper is formed over a layer of material on a wafer and the copper layer impacted with ions to improve its adhesion to the underlying layer.

Abstract: A gas feedthrough in a semiconductor processing apparatus comprises a static-dissipative composite material. This material is characterized by good resistance to electromigration and is preferably made of a homogeneous material. This apparatus for preventing the transfer of energy to a gas flown through a gas line and comprises a gas feedthrough comprising a static-dissipative material, the feedthrough having a first end for abuttingly contacting an electrically energized member and a second end for contacting a grounded member, the feedthrough defining a void therein along its length to house a gas line.

Abstract: A method and apparatus for depositing nano-porous low dielectric constant films by reaction of a silicon hydride containing compound or mixture optionally having thermally labile organic groups with a peroxide compound on the surface of a substrate. The deposited silicon oxide based film is annealed to form dispersed microscopic voids that remain in a nano-porous silicon oxide based film having a foam structure. The nano-porous silicon oxide based films are useful for filling gaps between metal lines with or without liner or cap layers. The nano-porous silicon oxide based films may also be used as an intermetal dielectric layer for fabricating dual damascene structures. Preferred nano-porous silicon oxide based films are produced by reaction of 1,3,5-trisilanacyclohexane, bis(formyloxysilano)methane, or bis(glyoxylylsilano)methane and hydrogen peroxide followed by a cure/anneal that includes a gradual increase in temperature.

Abstract: The invention generally provides an improved process for providing uniform step coverage on a substrate and planarization of metal layers to form continuous, void-free interconnections in high aspect ratio, sub-half micron applications. The invention provides a multi-step PVD process in which the plasma power is varied for each of the steps to obtain favorable fill characteristics as well as good reflectivity, morphology and throughput. The initial plasma powers are relatively low to ensure good, void-free filling of the aperture and, then, the plasma powers are increased to obtain the desired reflectivity and morphology characteristics. The invention provides an aperture filling process comprising physical vapor depositing a metal over the substrate and varying the plasma power during the physical vapor deposition. Preferably, the plasma power is varied from a first discrete low plasma power to a second discrete high plasma power.

Abstract: The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. Particularly contemplated is an apparatus and process for the deposition of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules.

Abstract: In an interactive information distribution system that utilizes open sessions to provide requested information to users, a method for sharing the use of open sessions between a plurality of set top terminals associated with a common account number or user.

Abstract: The present invention provides a method and apparatus for determining whether a substrate is in a clamped or unclamped state on a robot blade and preferably allows the position of a properly clamped substrate to be compensated for misalignments due to substrates not at or very near to their nominal positions on the blade. A sensor unit comprising a radiation source and a detector and capable of transmitting and receiving a signal is mounted outside a transfer chamber and is positioned to direct the signal therein. A robot blade having a reflecting member is actuated through the transfer chamber and into the path of the signal. The reflecting member is preferably positioned on a clamp finger and causes the signal to be reflected to the detector of the sensor unit when the signal is incident on the reflecting member. As the reflecting member moves through the signal the output of the sensor unit switches states, thereby generating values corresponding to the position of the reflecting member.