Abstract: The present invention generally provides a copper metallization method for depositing a conformal barrier layer and seed layer in a plasma chamber. The barrier layer and seed layer are preferably deposited in a plasma chamber having an inductive coil and a target comprising the material to be sputtered. One or more plasma gases having high molar masses relative to the target material are then introduced into the chamber to form a plasma. Preferably, the plasma gases are selected from xenon, krypton or a combination thereof.

Abstract: The invention provides a method for depositing a metal film on a substrate, comprising generating a high density plasma in a chamber, sputtering metal particles from a target to the substrate, and applying a modulated radio frequency (RF) bias to the substrate during deposition. Another aspect of the invention provides an apparatus for depositing a metal film on a substrate comprising a high density plasma physical vapor deposition (HDP PVD) chamber and a controller to modulate a RF bias power applied to a substrate in the chamber.

Abstract: A method and apparatus for retaining a substrate, such as a semiconductor wafer, upon an electrostatic chuck within a semiconductor wafer processing system. Specifically, the invention contains high voltage, DC power supply that is capable of both sourcing and sinking current at any polarity of output voltage level. This power supply is coupled to at least one electrode of an electrostatic chuck. Consequently, the power supply can be used to dynamically control the chucking voltage in response to any indicia of optimal chucking including leakage current, wafer-to-chuck potential, backside gas leakage rate, and the like.

Abstract: A chemical mechanical polisher includes a substrate carrier and support system which employs at least one motor to drive the substrate carrier through polishing motions. An additional driver for driving at least a portion of the carrier in directions perpendicular to the motions supplied by the motor(s) is also included. A clamping flexure is provided to selectively lock the substrate carrier in a vertical position. The substrate carrier, in one embodiment is mounted to a vertical driver via a column. The column is guided by spiral flexures to prevent motion in directions normal to vertical. An air mount is provided to support the majority of the mass of the substrate carrier, so that only a small force need be applied by the additional driver for movements in the vertical direction. Another drive mechanism is also described which provides both polishing motions as well as vertical force application.

Abstract: A substrate center-finding method and apparatus, for determining the center of a substrate being passed through a substrate handling chamber of a substrate processing system, includes any number of sensors arranged in any configuration and permits the substrate to pass through any trajectory that triggers the sensors. The locations of the sensors are calibrated by homing in on the sensors using a point, the reference point, near the tip of an arm assembly on a substrate handler. The substrate handler has an encoder for sensing the pivot angles of links in the arm assembly, whereby the coordinates of the reference point can be calculated from the angles and lengths of the links. When the substrate triggers a sensor, the location of the reference point is again calculated, and the coordinates of the trigger point on the edge of the substrate is determined relative to the reference point.

Abstract: The present invention generally provides a workpiece handling device and, more particularly, a vacuum operated chuck for securing a substrate to a substrate handling device. In one embodiment, the invention provides a chuck having three vacuum chuck rings projecting from a chuck base and having no resilient materials such as o-rings or the like exposed to the operating environment within which the wafer is being handled. In another embodiment, the present invention provides a substrate handling chuck having removable vacuum chuck rings for permitting interchangeable chuck ring elements for a particular application.

Abstract: The present invention provides a method and apparatus for cleaning deposits in a chemical vapor deposition (“CVD”) chamber equipped for generating a plasma A gas supplying line is connected to the CVD chamber to deliver a cleaning gas that reacts with the deposits formed therein. When all of the deposits have been reacted and the chamber is clean, the pressure in the chamber will change, either increasing or decreasing. A pressure detector located beyond an adjustable valve in the exhaust line allows the reaction end point to be determined, while allowing the adjustable valve to maintain a constant pressure in the chamber itself.

Abstract: A load lock chamber includes a chamber body having an aperture to allow a substrate to be transferred into or out of the chamber. The load lock chamber is configurable in several configurations, including a base configuration for providing a transition between two different pressures, a heating configuration for heating the substrate and providing a transition between two different pressures, and a cooling configuration for cooling the substrate and providing a transition between two different pressures. Various features of the chamber configurations help increase the throughput of the system by enabling rapid heating and cooling of substrates and simultaneous evacuation and venting of the chamber, and help compensate for thermal losses near the substrate edges, thereby providing a more uniform temperature across the substrate.

Abstract: An apparatus and concomitant method of reducing the number of synchronization pulses transmitted to the alarm units for increasing the reliability of the overall alarm system is disclosed. The synchronization signal is implemented as a reference or reset signal from which the alarm units derive a reference time to begin activation of the alarm units. Thus, when an alarm unit receives a reference synchronization pulse, the alarm unit applies the reference synchronization pulse as a reference point in time to trigger a series of flashes or audio tones.

Abstract: A method of processing a substrate, such as a semiconductor wafer, in a vacuum processing chamber includes the steps of depositing a material on a surface of the substrate using a gas mixture, and purging the chamber of residual gases by flowing SiH4 into the chamber. Preferably, WSix is deposited on a semiconductor wafer using a mixture comprising WF6, dichlorosilane and a noble gas, and the chamber is subsequently purged of residual WF6 and dichlorosilane by flowing SiH4 into the chamber. A further method of processing a substrate in a vacuum processing chamber includes the step of conditioning the chamber by flowing SiH4 into the chamber prior to depositing a material on the surface of the substrate. Semiconductor wafers processed according to the inventive method are characterized by more uniform sheet resistance values and reduced film stress.

Abstract: The present invention provides a method and apparatus for achieving conformal step coverage of one or more materials on a substrate using sputtered ionized material. A plasma is struck and maintained in a processing region by coupling energy into one or more gases. A target disposed in the processing region provides a source of material to be sputtered and then ionized in the plasma environment. During deposition of material onto the substrate, the plasma density is modulated by varying the energy supplied to the plasma. During a period of plasma decay, a bias to a substrate support member is increased to a relatively higher power to periodically enhance the attraction of positively charged particles to the substrate during the afterglow period of the plasma. In one embodiment, a bias to the target is also modulated.

Abstract: Two sliding sleeves are carried in a tubular pipe assembly for controlling the opening and closing of flow passages extending through the pipe wall. The pipe assembly is placed at the lower end of a tubing string disposed in a well to regulate the flow of fluid from the string into a subsurface well formation. The first sleeve extends between upper and lower seals disposed above and below the flow passage to close the flow passages to flow. A shifting tool operated from the well surface moves the sleeve axially down through the pipe assembly to open the flow passages, leaving the upper seal exposed. The shifting tool then moves the second sleeve axially down through the pipe to cover the exposed seal. Fluid pumped through the pipe exits freely through the flow passages without first having to flow through radial flow passages in the sliding sleeve to prevent erosion of the flow passages and the sleeve structure.

Abstract: A substrate support plate including a heating element for use in a process chamber is described. The heating element includes an outer sheath, a heating filament and a thermally-conductive and electrically insulative sealing material. The sealing material comprises a diamond powder.

Abstract: The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: a dual RF zone inductively coupled plasma source; a dual zone gas distribution system; temperature controlled surfaces within the tool; a symmetrically shaped turbomolecular pumped chamber body; a dual cooling zone electrostatic chuck; an all ceramic/aluminum alloy chamber; and a remote plasma chamber cleaning system.

Abstract: The present invention provides an apparatus and method for measuring the temperature of a moving radiant object. A probe, such as a pyrometer, is disposed in an opening of a vacuum chamber adjacent a radiation transparent window. The probe defines an optical path which intercepts the radiant object entering or exiting a processing chamber. The radiant object is moved through the optical path and emits electromagnetic waves. The electromagnetic waves are collected by the probe and transmitted to a signal processing unit where the waves are detected and converted to a temperature reading. If desired, the accumulated data may then be used to generate a cooling curve representing the thermal effects experienced by the radiant object. Extrapolation or correlation methods may be used to extend the cooling curve to points in time prior to or after the data collected by the probe.

Abstract: A helicon wave, high density RF plasma reactor having improved plasma and contaminant control. The reactor contains a well defined anode electrode that is heated above a polymer condensation temperature to ensure that deposits of material that would otherwise alter the ground plane characteristics do not form on the anode. The reactor also contains a magnetic bucket for axially confining the plasma in the chamber using a plurality of vertically oriented magnetic strips or horizontally oriented magnetic toroids that circumscribe the chamber. The reactor may utilize a temperature control system to maintain a constant temperature on the surface of the chamber.

Abstract: An alignment mechanism for aligning a substrate on a support member in a process chamber includes a set of guide pins extending from the upper surface of the support member equally spaced about the periphery thereof and spaced to receive a substrate therebetween and align a shadow ring thereover. The inner surfaces of the guide pins are slanted outwardly to form an inverted funnel for receiving and aligning the substrate on the support member. An annular gas groove in the upper surface of the support member provides communication for a supply of purge gas and directs the gas about the peripheral edge of the substrate. The guide pins which extend partially over the gas groove include slots therein that provide fluid communication through the guide pins from the gas groove to the peripheral edge of the substrate.

Abstract: The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: a dual RF zone inductively coupled plasma source; a dual zone gas distribution system; temperature controlled surfaces within the tool; a symmetrically shaped turbomolecular pumped chamber body; a dual cooling zone electrostatic chuck; an all ceramic/aluminum alloy chamber; and a remote plasma chamber cleaning system.

Abstract: Novel herbal extracts provide potent efficacy in the treatment of acne and furuncle. The formulated extracts of Momordica charantia L. are from either the whole plant or parts of the plant. The extracts have been formulated into aqueous solution, pads, and/or lotion. These formulations have been provided to treat acne and furuncle 2 to 3 times a day. It has demonstrated the ability to manage various grades of acne, from mild, moderate to severe, which include comedos, papules, pustules and nodules. Significant improvement is visible within five days. There are no observed either long-term or short-term side reactions.